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1. 发明公开

EP0599516A2 Process for removing surface contaminants from III-V semiconductors 失效
标题翻译： Verfahren zur Entfernung vonOberflächeverunreinigungenauf III-V Halbleitern。
公开(公告)号：EP0599516A2
公开(公告)日：1994-06-01
申请号：EP93309002.9
申请日：1993-11-11
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei , Mannaerts, Joseph Petrus
IPC分类号： H01L21/306 , H01L21/20
CPC分类号： H01L21/02046 , C30B29/42 , C30B33/00 , Y10S148/017
摘要： In accordance with the invention, a contaminated III-V semiconductor surface is cleaned by the sequential steps of exposure to hydrogen plasma, chemical etching in chlorine and annealing in vacuum. In a preferred embodiment, a semiconductor of the gallium arsenide family is subjected to hydrogen plasma in an ECR system for 20-120 minutes, then, without breaking vacuum, subjected to a C1 2 chemical etch at 250°C-450°C for 1-5 minutes. Again, without breaking vacuum, the semiconductor is annealed at 200°C-600°C for 5-15 minutes. To obtain good surface reconstruction, annealing preferably takes place at a temperature 300°C or above. The semiconductor surface thus processed is atomically smooth and sufficiently clean to permit regrowth of a high quality epitaxial layer.
摘要翻译：根据本发明，通过暴露于氢等离子体，氯中的化学蚀刻和真空退火的顺序步骤来清洁受污染的III-V半导体表面。在优选的实施方案中，将砷化镓族的半导体在ECR系统中经受氢等离子体20-120分钟，然后在不破坏真空的情况下，在250℃-450℃进行Cl2化学蚀刻，得到1- 5分钟。再次，在不破坏真空的情况下，半导体在200℃-600℃退火5-15分钟。为了获得良好的表面重构，退火优选在300℃或更高的温度下进行。如此处理的半导体表面是原子光滑的并且足够清洁以允许高质量外延层的再生长。

2. 发明公开

EP0599516A3 Process for removing surface contaminants from III-V semiconductors 失效
标题翻译：从III-V半导体去除表面污染物的方法。
公开(公告)号：EP0599516A3
公开(公告)日：1994-06-22
申请号：EP93309002.9
申请日：1993-11-11
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei , Mannaerts, Joseph Petrus
IPC分类号： H01L21/306 , H01L21/20
CPC分类号： H01L21/02046 , C30B29/42 , C30B33/00 , Y10S148/017
摘要： In accordance with the invention, a contaminated III-V semiconductor surface is cleaned by the sequential steps of exposure to hydrogen plasma, chemical etching in chlorine and annealing in vacuum. In a preferred embodiment, a semiconductor of the gallium arsenide family is subjected to hydrogen plasma in an ECR system for 20-120 minutes, then, without breaking vacuum, subjected to a C1 2 chemical etch at 250°C-450°C for 1-5 minutes. Again, without breaking vacuum, the semiconductor is annealed at 200°C-600°C for 5-15 minutes. To obtain good surface reconstruction, annealing preferably takes place at a temperature 300°C or above. The semiconductor surface thus processed is atomically smooth and sufficiently clean to permit regrowth of a high quality epitaxial layer.
摘要翻译：根据本发明，通过暴露于氢等离子体，氯中的化学蚀刻和真空退火的顺序步骤来清洁受污染的III-V半导体表面。在优选的实施方案中，将砷化镓族的半导体在ECR系统中经受氢等离子体20-120分钟，然后在不破坏真空的情况下，在250℃-450℃进行Cl2化学蚀刻，得到1- 5分钟。再次，在不破坏真空的情况下，半导体在200℃-600℃退火5-15分钟。为了获得良好的表面重构，退火优选在300℃或更高的温度下进行。如此处理的半导体表面是原子光滑的并且足够清洁以允许高质量外延层的再生长。

3. 发明公开

EP0499946A1 Light emitting diode with multifaceted reflector to increase coupling efficiency and alignment tolerance 失效
标题翻译： LED mit Viherach-Facettenreflektor zurErhöhungdes Kopplungsgrades und der Justiertoleranz。
公开(公告)号：EP0499946A1
公开(公告)日：1992-08-26
申请号：EP92102245.5
申请日：1992-02-11
申请人： AT&T Corp.
发明人： Blonder, Greg E. , Freund, Robert S. , Watts, Roderick Kent , Wetzel, Robert Charles
IPC分类号： G02B6/42 , H01L33/00 , G02B3/08
CPC分类号： H01L33/20 , G02B6/4204 , G03F7/00
摘要： A light source, such as an LED (10), is provided with a multifaceted reflector to facilitate coupling of emitted light (11) into an optical waveguide such as an optical fiber (40). In a preferred embodiment, a conventional LED fabricated on one side of a transparent substrate is provided with a series of integral concentric reflecting rings (31) on the opposite side of the substrate. The rings reflect light (11) diverging from the LED toward the central axis (A') of an optical fiber light.
摘要翻译：诸如LED（10）的光源设置有多面反射器，以便于将发射的光（11）耦合到诸如光纤（40）的光波导中。在优选实施例中，在透明基板的一侧上制造的常规LED在基板的相对侧上设置有一系列一体的同心反射环（31）。这些环反射从LED朝向光纤光的中心轴线（A'）发散的光（11）。

4. 发明授权

EP0499946B1 Light emitting diode with multifaceted reflector to increase coupling efficiency and alignment tolerance 失效
标题翻译： LED多面反射镜，以增加耦合度和对准公差
公开(公告)号：EP0499946B1
公开(公告)日：1996-10-16
申请号：EP92102245.5
申请日：1992-02-11
申请人： AT&T Corp.
发明人： Blonder, Greg E. , Freund, Robert S. , Watts, Roderick Kent , Wetzel, Robert Charles
IPC分类号： G02B6/42 , H01L33/00 , G02B3/08
CPC分类号： H01L33/20 , G02B6/4204 , G03F7/00

5. 发明授权

EP0562769B1 Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译：该表面发射半导体激光器具有改善的光学限制
公开(公告)号：EP0562769B1
公开(公告)日：1999-05-26
申请号：EP93302072.9
申请日：1993-03-18
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei
IPC分类号： H01S3/085
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222

6. 发明公开

EP0562769A3 Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译：具有增强光学约束的半导体表面发射激光
公开(公告)号：EP0562769A3
公开(公告)日：1993-12-22
申请号：EP93302072.9
申请日：1993-03-18
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei
IPC分类号： H01S3/085
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222
摘要： The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material (24A,24B) having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made.

7. 发明公开

EP0562769A2 Semiconductor surface emitting laser having enhanced optical confinement 失效
标题翻译： OberflächenemittierenderHalbleiterlaser mit verbesserter optischer Begrenzung。
公开(公告)号：EP0562769A2
公开(公告)日：1993-09-29
申请号：EP93302072.9
申请日：1993-03-18
申请人： AT&T Corp.
发明人： Choquette, Kent Dennis , Freund, Robert S. , Hong, Minghwei
IPC分类号： H01S3/085
CPC分类号： H01S5/18308 , H01S5/0283 , H01S5/222 , H01S5/2222
摘要： The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material (24A,24B) having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made.
摘要翻译：本申请人已经发现，可以通过蚀刻掉期望的激光腔周围的生长层的部分并且再生周期性较小的材料的周边区域（24A，24B），可以制造具有增强的光学限制和改善的散热特性的表面发射激光器折射率比活性区域。使用低损伤蚀刻和原位再生长或氢等离子体清洁，然后再生长，可以制备具有增强的光学隔离和散热特性的表面发射激光器。

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