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81. 发明公开

EP1044460A1 ELECTRON SOURCES UTILIZING PATTERNED NEGATIVE ELECTRON AFFINITY PHOTOCATHODES 审中-公开
标题翻译：电子源使用GEMÜSTERTEN光阴极负电子活动
公开(公告)号：EP1044460A1
公开(公告)日：2000-10-18
申请号：EP98961923.4
申请日：1998-12-04
申请人： INTEVAC, INC. , THE BOARD OF TRUSTEES OFTHE LELAND STANFORD JUNIOR UNIVERSITY
发明人： SCHNEIDER, James, E. , COSTELLO, Kenneth, A. , MCCORD, Mark, A. , PEASE, R., Fabian , BAUM, Aaron, W.,Apartment 3
IPC分类号： H01J40/06
CPC分类号： G03F7/70375 , H01J3/021 , H01J27/04 , H01J37/073 , H01J37/075 , H01J40/16 , H01J2201/3423 , H01J2237/06333 , H01J2237/31779
摘要： An electron source includes a negative electron affinity photocathode (10) on a light-transmissive substrate (12) and a light beam generator (50) for directing a light beam (22) through the substrate (12) at the photocathode (10) for exciting electrons into the conduction band. The photocathode (10) has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electrons source further includes electron optics (32, 66) for forming the electrons into an electron beam (30) and a vacuum enclosure (14, 62) for maintaining the photocathode (10) at high vacuum. The photocathode (10) is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate (12).

82. 发明公开

EP0973185A2 Etched and formed extractor grid 有权
标题翻译： Elektronenquelle mitgeätztemund geformtem Extraktionstitter
公开(公告)号：EP0973185A2
公开(公告)日：2000-01-19
申请号：EP99305204.2
申请日：1999-07-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Beeteson, John Stuart , Knickerbocker, John Ulrich , Knox, Andrew Ramsay , Lowe, Anthony Cyril
IPC分类号： H01J29/46 , H01J1/46
CPC分类号： H01J29/68 , H01J3/021 , H01J29/028 , H01J29/467 , H01J2329/00 , H01J2329/8625 , H01J2329/863
摘要： An electron source comprises a cathode means, and an extractor grid used to extract electrons from the cathode. The extractor grid is formed by etching a plurality of apertures in the material. A plurality of spacing members for spacing the extractor grid at a constant, predetermined spacing from the cathode are used. Each of the spacing members is formed by etching around a substantial portion of the periphery of the aperture and folding a remaining portion of the periphery of the aperture at substantially a right angle to the planar material.
摘要翻译：电子源包括阴极装置和用于从阴极提取电子的提取器栅格。提取器栅格通过蚀刻材料中的多个孔而形成。使用多个间隔构件，用于以与阴极恒定的预定间隔间隔提取器栅格。每个间隔构件通过围绕孔的周边的大部分进行蚀刻而形成，并将孔的周边的剩余部分与平面材料基本成直角折叠。

83. 发明授权

EP0535953B1 Field-emission type electronic device 失效
标题翻译：与场致发射电子装置中操作
公开(公告)号：EP0535953B1
公开(公告)日：1996-01-10
申请号：EP92308965.0
申请日：1992-10-01
申请人： SHARP KABUSHIKI KAISHA
发明人： Maruo, Yuji , Akagi, Yutaka , Ise, Tomokazu , Urayama, Masao
IPC分类号： H01J1/30 , H01J3/02 , H01J21/10
CPC分类号： H01J3/022 , H01J1/30 , H01J1/3042 , H01J3/021 , H01J21/105

84. 发明授权

EP0502401B1 Low aberration field emission electron gun 失效
标题翻译：场发射电子枪低像差。
公开(公告)号：EP0502401B1
公开(公告)日：1995-06-07
申请号：EP92103103.5
申请日：1992-02-24
申请人： Etec Systems, Inc.
发明人： Gesley, Mark A.
IPC分类号： H01J37/073 , H01J3/02
CPC分类号： H01J37/073 , H01J3/021 , H01J2237/06316

85. 发明公开

EP0630518A4 VERTICAL MICROELECTRONIC FIELD EMISSION DEVICES AND METHODS OF MAKING SAME. 失效
标题翻译：垂直微电子场发射器件及其生产工艺。
公开(公告)号：EP0630518A4
公开(公告)日：1995-04-19
申请号：EP93906238
申请日：1993-03-03
申请人： MCNC
发明人： JONES GARY WAYNE , SUNE CHING-TZONG
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J29/87 , H01J31/12 , H01J1/30
CPC分类号： H01J3/021 , H01J1/3042 , H01J9/025 , H01J2201/319
摘要： A vertical microelectronic field emitter (10) includes a conductive top portion (15) and a resistive bottom portion (16) in an elongated column (12) which extends vertically from a horizontal substrate (11). An emitter electrode (17) may be formed at the base of the column, and an extraction electrode (18) may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips (15) on the face of a substrate and then forming trenches (22) in the substrate (11) around the tips to form columns (12) in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric (19) and a conductor layer (18) is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate (11) with the trenches defining columns (12) in the substrate. Then, tips (15) are formed on top of the columns. The trenches are filled with dielectric and the conductor layers is formed on the dielectric to form the extraction electrodes.

86. 发明公开

EP0563500A1 Source for intense coherent electron pulses 失效
标题翻译：强化，kohärentegepulste Elektronenquelle。
公开(公告)号：EP0563500A1
公开(公告)日：1993-10-06
申请号：EP92810245.8
申请日：1992-04-01
申请人： International Business Machines Corporation
发明人： Fink, Hans-Werner, Dr. , Schmid, Heinz
IPC分类号： H01J37/073 , H01J3/02
CPC分类号： H01J3/021 , H01J37/073
摘要： This source for intense coherent electron pulses of an energy below 1 keV comprises an ultrasharp electron-emitting tip (10) and an anode (11), both arranged in mutual alignment inside a vacuum envelope (9). A pulsed potential with an amplitude in the range between 100 V and 500 V and with a variable pulse rate is applied between said tip (10) and said anode (11). The tip (10) is maintained negative with respect to said anode (11), the tip (10) having a sharpness such that the electric field at its surface exceeds 10⁷ V/cm at said pulsed potential.
An object (14) is arranged downstream in front of the opening (12) in said anode (11) within the electron beam, such that the spherical wave of electrons arriving at a screen (13) arranged opposite said tip (10) and oriented orthogonally with respect to the axis of the electron beam passing said opening (12), generates an interference pattern thereon, namely a Gabor hologram in case said object (14) is smaller than the diameter of said opening (12), and a transmission hologram in the case said object (14) is bigger than the diameter of said opening (12) and at least partially transparent to the electron beam.
摘要翻译：这种用于低于1keV的能量的强相干电子脉冲的源包括超真空电子发射尖端（10）和阳极（11），两者均布置成在真空外壳（9）内相互对准。在所述尖端（10）和所述阳极（11）之间施加振幅在100V和500V之间并且具有可变脉冲速率的脉冲电位。尖端（10）相对于所述阳极（11）保持为负极，尖端（10）具有清晰度，使得其表面处的电场在所述脉冲电势处超过10V / cm。物体（14）被布置在电子束内的所述阳极（11）的开口（12）的前方的下游，使得到达与所述尖端（10）相对布置的屏幕（13）的电子球形波取向相对于通过所述开口（12）的电子束的轴线正交地，在所述物体（14）小于所述开口（12）的直径的情况下，在其上产生干涉图案，即Gabor全息图，以及透射全息图在所述物体（14）大于所述开口（12）的直径并且对于电子束至少部分透明的情况下。

87. 发明公开

EP0535953A3 Field-emission type electronic device 失效
标题翻译：场发射型电子器件
公开(公告)号：EP0535953A3
公开(公告)日：1993-06-02
申请号：EP92308965.0
申请日：1992-10-01
申请人： SHARP KABUSHIKI KAISHA
发明人： Maruo, Yuji , Akagi, Yutaka , Ise, Tomokazu , Urayama, Masao
IPC分类号： H01J1/30 , H01J3/02 , H01J21/10
CPC分类号： H01J3/022 , H01J1/30 , H01J1/3042 , H01J3/021 , H01J21/105
摘要： A field-emission electronic device works as a field-emission electron source. The field-emission electronic device comprises an anode electrode (3), a first insulating member (5) disposed on the anode electrode, a cathode electrode (1) disposed on the first insulating member, a second insulating member (6) disposed on the anode electrode at a distance from the first insulating member, and a gate electrode (2) disposed on the second insulating member. Therefore, the field-emission electronic device can be formed to make the distance between the electrodes smaller than that of the known field-emission electronic device. Concretely, the distances between the cathode electrode and the gate electrode and between the cathode electrode and the anode electrode are allowed to be reduced. This results in lowering a gate voltage and an anode voltage. Further enbodiments include a field emission cathode of metallic carbide, nitride, oxide or boride in which the composition ratio of carbon, nitrogen, oxygen or boron gradually increases from the substrate side to the emitting portion in order to improve thermal expansion properties of the cathode.

88. 发明公开

EP0523980A1 A field emission device and method for forming 失效
标题翻译： Feldemissionsvorrichtung und Verfahren zur Herstellung。
公开(公告)号：EP0523980A1
公开(公告)日：1993-01-20
申请号：EP92306481.0
申请日：1992-07-15
申请人： MOTOROLA, INC.
发明人： Kane, Robert C. , Hilgers, Kevin B.
IPC分类号： H01J9/02 , H01J1/30
CPC分类号： H01J3/021 , H01J1/3042 , H01J9/025
摘要： A method of producing an FED including a central conductive region (103) having a surface perpendicular to the supporting structure (101) forming a device anode, a structure including first (106) and second (112) layers.of intrinsic semiconductor material with a conductive layer (105), forming an emitter, sandwiched therebetween and stacked to each provide a surface parallel to and spaced from the conductive region (103) surface, and conductive layers (114) disposed on the provided surfaces of the first (106) and second 9112) layers, perpendicular to the sandwiched conductive layer (105), in spaced relation to each other and the sandwiched conductive layer (105) to form gate extraction electrodes.
摘要翻译：一种制造FED的方法，包括具有垂直于形成器件阳极的支撑结构（101）的表面的中心导电区（103），包括本征半导体材料的第一（106）和第二（112）层的结构，其具有导电层（105），形成发射极，夹在它们之间并且层叠以提供与导电区域（103）表面平行并与之隔开的表面，以及布置在第一（106）的所提供的表面上的导电层（114）和垂直于夹层导电层（105）的第二层9112）彼此间隔开并且夹持导电层（105）形成栅极引出电极。

89. 发明授权

EP0261198B1 PLASMA-ANODE ELECTRON GUN 失效
标题翻译：等离子体阳极电子枪
公开(公告)号：EP0261198B1
公开(公告)日：1992-11-25
申请号：EP87902195.4
申请日：1987-02-13
申请人： Hughes Aircraft Company
发明人： HARVEY, Robin, J.
IPC分类号： H01J3/02
CPC分类号： H01J3/021
摘要： A plasma-anode electron gun includes a cathode means of a material such as molybdenum having a relatively high ratio of emission of secondary electrons to impinging helium ions. A hollow annular anode structure (16) contains an ionized plasma, and has a central opening (38) through which the electron beam (36) is directed, when ions from the anode are released to impinge upon the cathode (12). The anode and ion source structure may be grounded, and ions are released through openings facing the cathode when a positive trigger pulse is applied to one or more electrodes extending within the plasma. The cathode is preferably operated at a voltage in the order of thirty to two hundred thousand volts negative with respect to the cathode. Leakage of ions from the hollow anode may be inhibited by the provision of a supplemental grid biased to a low positive potential.

90. 发明公开

EP0501785A3 Electron emitting structure and manufacturing method 失效
标题翻译：电子发射结构与制造方法
公开(公告)号：EP0501785A3
公开(公告)日：1992-11-19
申请号：EP92301632.3
申请日：1992-02-26
申请人： RAYTHEON COMPANY
发明人： Feist, Wolfgang M.
IPC分类号： H01J1/30 , H01J17/49 , H01J9/02
CPC分类号： H01J9/025 , H01J3/021 , H01J31/127 , H01J2329/8625
摘要： A field emitter includes an electron emitting structure (112) spaced from an anode structure (114), with the intervening gap (113) being substantially evacuated. The electron emitting structure (112) includes a first electrically conductive layer (128) spaced by an insulating layer (130) from a second conductive layer (132), and a generally circular aperture (134) disposed through the layers (128,132). The anode structure (114) includes an electrically conductive layer (142). Electrostatic forces, provided from a potential applied between the first conductive layer (128) and the anode structure (114), cause an electron beam to be drawn from a cathode provided by a peripheral edge portion (127a) of the first conductive layer (128) within the aperture (134) onto an adjacent surface portion of the anode structure (114). Such field emission occurs under the control of a potential applied between the first and second conductive layers (128,132) of the electron emitting structure with the second conductive layer (132) functioning as a control electrode of the emitting structure. The anode structure (114) has a phosphor layer (144) which converts the electrical energy from the electron bombardment into visible light energy. In one embodiment (Fig. 6), a potential applied to a third conductive layer (360) of the emitting structure (312) serves to focus the electron stream on the anode structure (314). Methods of manufacturing the electron emitting structures employ successive steps of layer deposition and subsequent selective etching.
摘要翻译：场致发射器包括与阳极结构（114）间隔开的电子发射结构（112），其间隙（113）基本上被抽空。电子发射结构（112）包括由绝缘层（130）与第二导电层（132）间隔开的第一导电层（128）和穿过层（128,132）设置的大致圆形孔（134）。阳极结构（114）包括导电层（142）。从施加在第一导电层（128）和阳极结构（114）之间的电位提供的静电力使得电子束从由第一导电层（128）的外围边缘部分（127a）提供的阴极被拉伸）到阳极结构（114）的相邻表面部分上。这种场发射在施加在电子发射结构的第一和第二导电层（128,132）之间的电位的控制下发生，而第二导电层（132）用作发光结构的控制电极。阳极结构（114）具有将电子轰击的电能转换为可见光能的荧光体层（144）。在一个实施例（图6）中，施加到发光结构（312）的第三导电层（360）的电位用于将电子流聚焦在阳极结构（314）上。制造电子发射结构的方法采用层沉积和随后的选择性蚀刻的连续步骤。

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