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1. 发明公开

EP1018140A1 ELECTRON SOURCES HAVING SHIELDED CATHODES 失效
标题翻译：带有屏蔽阴极电子源
公开(公告)号：EP1018140A1
公开(公告)日：2000-07-12
申请号：EP98918743.0
申请日：1998-04-23
申请人： THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
发明人： BAUM, Aaron, W. , SCHNEIDER, James, E., Jr.
IPC分类号： H01J40/06
CPC分类号： G03F7/70375 , H01J3/021 , H01J27/04 , H01J37/073 , H01J2201/3423 , H01J2237/045 , H01J2237/06333 , H01J2237/28 , H01J2237/31754
摘要： An electron beam source includes a cathode (200) having an electron emission surface including an active area (208) for emission of electrons and a cathode shield assembly (220) including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening (222) aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode (200), electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode (200) may be a negative electron affinity photocathode formed on a light-transmissive substrate (202). The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode (200) may be moved relative to the opening (222) in the shield so as to align a new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.

2. 发明公开

EP0996961A4 NIGHT VISION DEVICE HAVING AN IMAGE INTENSIFIER TUBE 失效
标题翻译：夜视仪LIGHT GAIN管
公开(公告)号：EP0996961A4
公开(公告)日：2000-05-31
申请号：EP98936962
申请日：1998-07-15
申请人： LITTON SYSTEMS INC
发明人： SINOR TIMOTHY W , ESTRERA JOSEPH P
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/14 , H01J43/00 , H01L31/18
CPC分类号： H01J31/506 , H01J1/34 , H01J29/38 , H01J2201/3423
摘要： A night vision device (10) includes an image intensifier tube (14) which includes a photocathode (22) responsive both to white light and to infrared light to release photoelectrons. The photocathode (22) is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.

3. 发明授权

EP0259878B1 Electron emission element 失效
标题翻译：电子发射元件
公开(公告)号：EP0259878B1
公开(公告)日：1997-05-14
申请号：EP87113260.1
申请日：1987-09-10
申请人： CANON KABUSHIKI KAISHA
发明人： Suzuki, Akira , Tsukamoto, Takeo , Shimizu, Akira , Sugata, Masao , Shimoda, Isamu , Okunuki, Masahiko
IPC分类号： H01J1/34 , H01J1/30
CPC分类号： H01J1/308 , H01J1/34 , H01J2201/3423

4. 发明授权

EP0464242B1 Photoemitter 失效
标题翻译：光发射。
公开(公告)号：EP0464242B1
公开(公告)日：1995-03-15
申请号：EP90112718.3
申请日：1990-07-03
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Mizushima, Yoshihiko , Hirohata, Toru , Ihara, Tsuneo , Niigaki, Minoru , Sugimoto, Kenichi , Oba, Koichiro , Suzuki, Toshihiro , Suzuki, Tomoko
IPC分类号： H01J1/34
CPC分类号： H01J1/308 , H01J1/34 , H01J2201/3423

5. 发明公开

EP0512429A1 Semiconductor device for emitting highly spin-polarized electron beam 失效
标题翻译： Halbleitereinrichtungfürhohen spinpolarisierten Elektronenstrahl。
公开(公告)号：EP0512429A1
公开(公告)日：1992-11-11
申请号：EP92107431.6
申请日：1992-04-30
申请人： DAIDO TOKUSHUKO KABUSHIKI KAISHA
发明人： Nakanishi, Tsutomu , Horinaka, Hiromichi , Saka, Takashi , Kato, Toshihiro
IPC分类号： H01J3/02 , H01J1/34
CPC分类号： H01J1/34 , H01J3/021 , H01J2201/3423 , H01J2203/0296
摘要： A semiconductor device (10) for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer (14) formed of gallium arsenide phosphide, GaAs 1-x P x , and having a first lattice constant; a second compound semiconductor layer (16) grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant; and a fraction, x, of the gallium arsenide phosphide GaAs 1-x P x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, ε R , of not less than 2.0 x 10⁻³ in the second layer. The fraction x of the gallium arsenide phosphide GaAs 1-x P x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.
摘要翻译：一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的第一晶格常数的第一化合物半导体层（14）的高度自旋极化的电子束的半导体器件（10）在所述第一化合物半导体层上生长有砷化镓（GaAs）的第二化合物半导体层（16），并且具有与所述第一晶格常数不同的第二晶格常数; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t定义第一和第二晶格常数之间的失配量，使得失配量提供残余应变， εR在第二层中不小于2.0×10 -3 <3。砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了重的和在第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。

6. 发明公开

EP0472703A4 IMPROVED TRANSFERRED ELECTRON III-V SEMICONDUCTOR PHOTOCATHODE 失效
标题翻译：改进的电子III-V半导体光刻胶
公开(公告)号：EP0472703A4
公开(公告)日：1992-05-13
申请号：EP91906221
申请日：1991-02-13
申请人： VARIAN ASSOCIATES, INC.
发明人： COSTELLO, KENNETH, ARTHUR , SPICER, WLLIAM, E. , AEBI, VERLE, W.
IPC分类号： H01J1/34 , H01L31/108 , H01L27/14
CPC分类号： H01J1/34 , H01J2201/3423

7. 发明公开

EP0472703A1 IMPROVED TRANSFERRED ELECTRON III-V SEMICONDUCTOR PHOTOCATHODE 失效
标题翻译：改进的电子转移III-V族半导体光阴极。
公开(公告)号：EP0472703A1
公开(公告)日：1992-03-04
申请号：EP91906221.0
申请日：1991-02-13
申请人： VARIAN ASSOCIATES, INC.
发明人： COSTELLO, Kenneth, Arthur , SPICER, Wlliam, E. , AEBI, Verle, W.
IPC分类号： H01J1 , H01L31
CPC分类号： H01J1/34 , H01J2201/3423
摘要： Photocathode à semi-conducteurs III-V (12) à électrons transférés améliorés comprenant un plot de contact en aluminium (40) ainsi qu'une structure de grille en aluminium (42) améliorant l'efficacité quantique par l'élimination d'un obstacle majeur aux électrons s'échappant dans le vide, et régulant l'apparation de taches noires provoquées par des sources d'émission de photons trop lumineuses.

8. 发明授权

EP0228323B1 Photocathode à rendement élevé 失效
标题翻译：高效光刻胶
公开(公告)号：EP0228323B1
公开(公告)日：1990-04-04
申请号：EP86402618.2
申请日：1986-11-25
申请人： THOMSON-CSF
发明人： Munier, Bernard , De Groot, Paul , Weisbuch, Claude , Henry, Yves
IPC分类号： H01J1/34 , H01J29/38
CPC分类号： H01J1/34 , H01J2201/3423

9. 发明公开

EP0190079A3 Photomultiplier dynode coating materials and process 失效
标题翻译：光催化剂DYNODE涂料和工艺
公开(公告)号：EP0190079A3
公开(公告)日：1989-01-18
申请号：EP86400169.8
申请日：1986-01-28
申请人： SANGAMO WESTON, INC.
发明人： Purcell, John , Puglis, John , Duckett, Steven
IPC分类号： H01J43/10 , H01J9/12
CPC分类号： H01J9/12 , H01J1/32 , H01J43/10 , H01J2201/32 , H01J2201/3423 , H01J2201/3425
摘要： The photosensitivity of a photomultiplier dynode to white light or infrared radiation is greatly reduced by coating the dynode with a layer of an alkali halide material having good secondary electron emission characteristics. A method of applying the coating to the dynode is also described.

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