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81. 发明公开

EP3367446A1 METHOD OF MANUFACTURING OPTICAL COMPONENT 有权
公开(公告)号：EP3367446A1
公开(公告)日：2018-08-29
申请号：EP18158757.7
申请日：2018-02-27
申请人： NICHIA CORPORATION
发明人： ICHIKAWA, Masatsugu
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , C03C27/08 , H01L24/83 , H01L33/0079 , H01L33/502 , H01L33/60 , H01L2224/83009 , H01L2224/8322 , H01L2224/83224 , H01L2224/83894 , H01L2924/15788 , H01L2933/0041 , H01L2933/0058
摘要： A method of manufacturing an optical component for an optical semiconductor includes: providing a joined body including: a first member having light transmissivity and containing at least one element selected from the group consisting of oxygen, fluorine, and nitrogen, and a second member, wherein the first member and the second member are joined together via a metal joining member made by directly bonding a first metal film formed on the first member and a second metal film formed on the second member; and irradiating the joining member with a laser beam or a microwave.

82. 发明授权

EP2383808B1 Light emitting device package having leads with a recess for the chip mount area, and corresponding manufacturing methods 有权
公开(公告)号：EP2383808B1
公开(公告)日：2018-08-29
申请号：EP11164125.4
申请日：2011-04-28
申请人： Nichia Corporation
发明人： Hayashi, Masaki , Kuramoto, Masafumi
IPC分类号： H01L33/62 , H01L23/00 , H01L33/48
CPC分类号： H01L33/62 , H01L24/97 , H01L33/486 , H01L2224/32245 , H01L2224/48095 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/85385 , H01L2224/97 , H01L2924/01322 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： The light emitting device (100) includes a resin package (20) provided with a recess portion (27), a light emitting element (10) housed in the recess portion (27), a sealing member (30) filled in the recess portion (27) and covering the light emitting element (10), in which the resin package (20) has leads (22a, 22b) which are not exposed two opposing outer side surfaces (20d) but are exposed from two opposing outer side surfaces which are perpendicular with the outer side surfaces (20d) , a resin portion (25) is integrally molded with the leads (22a, 22b), the upper surfaces of the leads (22a, 22b) are exposed from the resin portion 25 to the inner bottom surface (27a) of the recess portion (27), and the top surfaces of the leads (22a, 22b) are formed such that the region constituting the inner bottom surface of the recess portion (27) are lower than their peripheral region.

83. 发明授权

EP2551925B1 Method of manufacturing a nitride semiconductor light emitting element 有权
公开(公告)号：EP2551925B1
公开(公告)日：2018-08-22
申请号：EP11759434.1
申请日：2011-03-23
申请人： Nichia Corporation
发明人： MUSASHI, Naoki
IPC分类号： H01L33/42 , H01L33/32 , H01L33/00
CPC分类号： H01L33/42 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/32 , H01L2933/0016
摘要： An object of the present invention is to provide a nitride semiconductor light emitting element having a novel transparent electrode. The nitride semiconductor light emitting element has the transparent electrode on a p-tyre nitride semiconductor layer, wherein the p-type nitride semiconductor layer and the transparent electrode can be in good ohmic contact to each other and wherein the variability of the forward voltage (Vf) within the wafer can be reduced. The present invention is a nitride semiconductor light emitting element including: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and a transparent electrode formed on the p-side nitride semiconductor layer, wherein the transparent electrode is made of indium oxide containing Ge and Si.

84. 发明授权

EP1862140B1 Optical component 有权
公开(公告)号：EP1862140B1
公开(公告)日：2018-08-22
申请号：EP07009733.2
申请日：2007-05-15
申请人： NIPPON ELECTRIC GLASS CO., LTD , Nichia Corporation
发明人： Kadomi, Masaaki , Furuyama, Tadahito , Umayahara, Yoshio , Iwao, Masaru , Hama, Atsutomo , Hayashi, Yukihiro
IPC分类号： A61B18/22 , G02B6/42 , H01L33/00
CPC分类号： G02B6/423 , H01L33/507
摘要： The optical component according to the present invention includes a fixed member (1) including a through hole (3-1), and a wavelength conversion member (2) having at least one part thereof arranged in the through hole, where the fixed member is formed with a cut-in part or a hole part (6-1) in a direction substantially perpendicular to the longitudinal direction of the through hole, the cut-in or hole part being filled with a fixing means (6-2).

85. 发明公开

EP3355366A1 METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT 有权
公开(公告)号：EP3355366A1
公开(公告)日：2018-08-01
申请号：EP18153358.9
申请日：2018-01-25
申请人： NICHIA CORPORATION
发明人： Inoue, Naoto , Sumitomo, Yoshitaka
IPC分类号： H01L33/00 , H01L21/78 , B23K26/00
摘要： A method of manufacturing a light emitting element includes: providing a wafer (100W) that includes a substrate (100) having a first principal face (110a) and a second principal face (110b), a dielectric multilayer film (120) disposed on the first principal face (110a), and a semiconductor structure (130) disposed on the second principal face (110b); forming modified regions (110s) in the substrate (110) by focusing a laser beam (B) inside the substrate via the dielectric multilayer film (120), and allowing cracks (Fra) to form from the modified regions (110s) to the dielectric multilayer film (120); subsequent to forming the modified regions (110s) in the substrate (110), removing regions of the dielectric multilayer film (120) that contain cracks (Fra); and cleaving the wafer along regions where cracks were formed in the substrate.

86. 发明授权

EP2736130B1 Nitride semiconductor laser element 有权
公开(公告)号：EP2736130B1
公开(公告)日：2018-07-11
申请号：EP13194375.5
申请日：2013-11-26
申请人： Nichia Corporation
发明人： Masui, Shingo
IPC分类号： H01S5/20 , H01S5/343 , H01S5/32
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/021 , H01S5/0213 , H01S5/2009 , H01S5/2018 , H01S5/2031 , H01S5/22 , H01S5/3013 , H01S5/3202 , H01S5/34333
摘要： To realize a nitride semiconductor laser element having improved internal quantum efficiency. The nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer; wherein the n-type semiconductor layer includes an n-side optical guide layer; wherein the active layer includes two or more well layers, and at least one barrier layer provided between the well layers; wherein the barrier layer includes a barrier layer having band gap energy higher than that of the n-side optical guide layer; wherein the p-type semiconductor layer includes: an electron barrier layer having band gap energy higher than that of all barrier layers included in the active layer, and a p-side optical guide layer provided between a final well layer, that is a well layer nearest to the p-type semiconductor layer of the two or more well layer, and the electron barrier layer; and wherein the p-side optical guide layer includes: a first region that is disposed on a side of the final well layer and has band gap energy lower than that of the n-side optical guide layer, and a second region that is disposed on a side of the electron barrier layer and has band gap energy higher than that of the n-side optical guide layer.

87. 发明公开

EP3331108A1 LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE LIGHT EMITTING DEVICE 有权转让
公开(公告)号：EP3331108A1
公开(公告)日：2018-06-06
申请号：EP17203718.6
申请日：2017-11-27
申请人： NICHIA CORPORATION
发明人： YAMASHITA, Toshiaki
IPC分类号： H01S5/00 , H01S5/022 , H01S5/40 , F21K9/64 , F21S41/12 , F21S41/16 , F21V9/30
CPC分类号： G01N21/64 , F21K9/64 , F21S41/16 , F21S41/176 , F21V9/30 , F21Y2115/30 , G01N2021/6419 , H01L33/502 , H01S5/005 , H01S5/0071 , H01S5/02212 , H01S5/02216 , H01S5/02296 , H01S5/4031 , H01S5/4087
摘要： A light emitting device 10 includes a fluorescent material 13, a first laser element 11 and a second laser element 12. The first laser element 11 is configured to emit a first laser light to excite the fluorescent material 13. The first laser light having a first peak wavelength that is shorter than an excitation peak wavelength of the fluorescent material 13. The second laser element 12 is configured to emit a second laser light to excite the fluorescent material 13. The second laser light has a second peak wavelength that is longer than the excitation peak wavelength of the fluorescent material 13.

88. 发明授权

EP1433831B1 NITRIDE PHOSPHOR AND METHOD FOR PREPARATION THEREOF, AND LIGHT EMITTING DEVICE 有权
公开(公告)号：EP1433831B1
公开(公告)日：2018-06-06
申请号：EP03710450.2
申请日：2003-03-20
申请人： Nichia Corporation
发明人： TAMAKI, Hiroto, c/o NICHIA CORPORATION , KAMESHIMA, Masatoshi, c/o NICHIA CORPORATION , TAKASHIMA, Suguru, c/o NICHIA CORPORATION , YAMADA, Motokazu, c/o NICHIA CORPORATION , NAITOU, Takahiro, c/o NICHIA CORPORATION , SAKAI, Kazuhiko, c/o NICHIA CORPORATION , MURAZAKI, Yoshinori, c/o NICHIA CORPORATION
IPC分类号： C09K11/59 , C09K11/66 , C09K11/65 , C09K11/08 , H01L33/00
CPC分类号： H01L33/502 , C01B21/0602 , C01B21/0821 , C01P2002/52 , C01P2002/84 , C01P2004/03 , C01P2004/61 , C04B35/44 , C04B35/584 , C04B35/597 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3286 , C04B2235/3852 , C04B2235/3873 , C04B2235/3895 , C04B2235/764 , C09K11/0883 , C09K11/77 , C09K11/7702 , C09K11/7703 , C09K11/7728 , C09K11/773 , C09K11/7731 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01019 , H01L2924/01021 , H01L2924/01037 , H01L2924/01055 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01322 , H01L2924/12041 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/00012
摘要： To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y-(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

89. 发明授权

EP2990869B1 LIGHT SOURCE APPARATUS AND PROJECTOR HAVING LIGHT SOURCE APPARATUS 有权
公开(公告)号：EP2990869B1
公开(公告)日：2018-03-21
申请号：EP15182693.0
申请日：2015-08-27
申请人： Nichia Corporation
发明人： MIYATA, Tadaaki , MATSUO, Hidenori
IPC分类号： G03B21/20 , G02B27/30 , G02B26/00 , H04N9/31 , G03B21/16
CPC分类号： H04N9/3111 , G02B26/008 , G02B27/30 , G03B21/16 , G03B21/2006 , G03B21/2013 , G03B21/204 , G03B21/2046 , H04N9/3158
摘要： A light source apparatus (1) and a projector (100) including the light source apparatus are provided. The light source apparatus (1) comprises: a plurality of light sources each source including a laser diode (12) and a collimating lens (13), said collimating lens (13) collimates a light emitted from said laser diode (12) into an approximately collimated beam, a plurality of housings (10) in which said plurality of light sources are placed so that a light is emitted from each of said light source advances approximately in parallel in the same direction, a condenser lens (20) which condenses lights which is emitted from said plurality of housings (10) to a phosphor (32), a phosphor wheel (30) having said phosphor (32), said phosphor wheel (30) transmitting the lights which is emitted from said condenser lens (20), wherein incident angles of the lights emitted from said housings (10) to an optical axis of said condenser lens (20) are made different by varying mount angles of said housings (10) to a supporting member (60).

90. 发明授权

EP2485286B1 Light emitting device 有权
公开(公告)号：EP2485286B1
公开(公告)日：2018-03-21
申请号：EP12153247.7
申请日：2012-01-31
申请人： Nichia Corporation
发明人： Hayashi, Masaki
IPC分类号： H01L33/62 , H01L33/48
CPC分类号： F21V23/001 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49113 , H01L2924/01322 , H01L2924/00014
摘要： A light emitting device (10) with high reliability is provided. The light emitting device according to the present invention includes a resin molded body (11) having a recess (111), a first electrically conductive member (121) and a second electrically conductive member (122) each having terminal portions respectively exposed from a first outer side surface (112a) and second outer side surface (112b) which are opposite outer side surfaces among the outer side surfaces of the resin molded body (11), and a light emitting element (13) mounted on the first electrically conductive member exposed at a bottom surface of the recess. The recess has a first bottom surface (111a) on which the light emitting element (13) is mounted and a second bottom surface (111b) arranged at a higher position of the outer periphery of the first bottom surface (111a). The first electrically conductive member (121) has a first bend portion (121b) which is at a position spaced apart from a center line connecting the center of the first outer side surface (112a) and the center of the second outer side surface (112b) and which extends upward away from the first bottom surface (111a). The first electrically conductive member (121) also has a first exposed portion (121c) which is continuous to the first bend portion (121b) and is exposed at the second bottom surface (111b).

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