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71. 发明公开

EP2448012A1 PHOTOTRANSISTOR, AND A DISPLAYING DEVICE EQUIPPED THEREWITH 有权
标题翻译：弗吉尼亚州um en en en en UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG
公开(公告)号：EP2448012A1
公开(公告)日：2012-05-02
申请号：EP10791759.3
申请日：2010-02-01
申请人： Sharp Kabushiki Kaisha
发明人： KITAGAWA, Hideki , IMAI, Hajime , MURAI, Atsuhito
IPC分类号： H01L31/10 , G02F1/1333 , G02F1/135 , H01L27/146
CPC分类号： H01L27/14643 , G02F2001/13312 , G06F3/0412 , G06F3/0421 , H01L27/14612 , H01L27/14678 , H01L27/14681 , H01L27/14692 , H01L31/1136
摘要： A phototransistor includes a source electrode and a gate electrode which have the same electric potential, a transparent electrode formed on a surface of an interlayer insulating film so as to be located above a channel region, and a refresh controller for reducing a charge accumulated in a portion of the channel region, the portion facing the transparent electrode, by applying a voltage between the transparent electrode, and the gate electrode and the source electrode.
摘要翻译：光电晶体管包括具有相同电位的源电极和栅电极，形成在层间绝缘膜的表面上以便位于沟道区上方的透明电极，以及用于减少累积在电极中的电荷的刷新控制器通过在透明电极与栅电极和源电极之间施加电压，使沟道区域的部分，面对透明电极的部分。

72. 发明公开

EP2333643A4 DISPLAY DEVICE 审中-公开
公开(公告)号：EP2333643A4
公开(公告)日：2012-04-18
申请号：EP09817551
申请日：2009-06-09
申请人： SHARP KK
发明人： SHIRAKI ICHIRO , MAEDA KAZUHIRO , SUGIYAMA HIROAKI
IPC分类号： G06F3/041 , G02F1/133 , G09G3/20 , G09G3/36 , H01L31/10 , H04N5/335
CPC分类号： G09G3/3648 , G09G2320/0233 , G09G2360/145 , H01L31/145

73. 发明公开

EP1726928A4 PHOTODETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：EP1726928A4
公开(公告)日：2011-10-05
申请号：EP05726677
申请日：2005-03-17
申请人： HAMAMATSU PHOTONICS KK
发明人： MIZUNO SEIICHIRO , FUNAKOSHI HARUHIRO , TAKA TETSUYA
IPC分类号： G01J1/44 , H01L31/10 , G01J1/46
CPC分类号： G01J1/46

74. 发明公开

EP2328187A1 IMAGE PICKUP DEVICE, VISIBILITY SUPPORT APPARATUS, NIGHT VISION DEVICE, NAVIGATION SUPPORT APPARATUS, AND MONITORING DEVICE 失效
标题翻译： BILDAUFNAHMEGERÄT，SICHTBARKEITSUNTERSTÜTZENDEVORRICHTUNG，NACHTSICHTGERÄT，NAVIGATIONSUNTERSTÜTZUNGSVORRICHTUNGUNDÜBERWACHUNGSGERÄT
公开(公告)号：EP2328187A1
公开(公告)日：2011-06-01
申请号：EP09812961.2
申请日：2009-07-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAGAI, Youichi , IGUCHI, Yasuhiro
IPC分类号： H01L31/10 , B60R1/00 , G08B25/00 , G08G1/16 , G08G3/02
CPC分类号： B82Y20/00 , H01L27/14649 , H01L27/14694 , H01L31/035236
摘要： An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 µm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5 × 10 16 /cm 3 or less.
摘要翻译：提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中噪声和暗电流被抑制，从而提供清晰的图像，而不管它是白天还是夜晚。该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散，对每个受光元件形成pn结，杂质选择性地扩散在光接收层的浓度为5×10 16 / cm 3以下。

75. 发明授权

EP1569275B1 BACKSIDE-ILLUMINATED PHOTODIODE ARRAY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE 有权
标题翻译： BACKLIT光电二极管的安排，和工艺制作半导体器件，
公开(公告)号：EP1569275B1
公开(公告)日：2011-03-30
申请号：EP03772879.7
申请日：2003-11-18
申请人： HAMAMATSU PHOTONICS K.K.
发明人： SHIBAYAMA, Katsumi, Hamamatsu Photonics K.K. , ISHIDA, Masayuki, Hamamatsu Photonics K.K. , YOKINO, Takafumi, Hamamatsu Photonics K.K.
IPC分类号： H01L27/14 , H01L31/0232 , H01L31/10 , G01T1/20
CPC分类号： H01L27/14603 , H01L27/1464 , H01L27/14683 , H01L31/02322 , H01L31/10
摘要： A backside-illuminated photodiode array (1) comprises a semiconductor substrate (3) composed of a semiconductor of a first conductivity type, wherein a light to be sensed (L) is incident on one side of the semiconductor substrate (3) and a plurality of photodiodes are formed on the other side of the substrate (3). On this other side of the semiconductor substrate (3), an array of a plurality of recess portions (4) is formed, and a semiconductor region (5) of a second conductivity type which is composed of a semiconductor of the second conductivity type is formed in the bottom portion (4a) of each recess portion (4), thereby forming an array of photodiodes.

76. 发明授权

EP1608022B1 PRODUCTION METHOD OF A PHOTODIODE ARRAY 有权
标题翻译：法光二极管矩阵的
公开(公告)号：EP1608022B1
公开(公告)日：2011-03-02
申请号：EP04723382.0
申请日：2004-03-25
申请人： HAMAMATSU PHOTONICS K.K.
发明人： SHIBAYAMA, Katsumi, c/o Hamamatsu Photonics K.K.
IPC分类号： H01L27/146 , H01L31/10 , G01T1/20
CPC分类号： H01L27/14683 , H01L27/1446 , H01L27/14618 , H01L27/14643 , H01L31/115 , H01L2924/0002 , H01L2924/00
摘要： A photodiode array (1) is provided with an n-type silicon substrate (3). A plurality of photodiodes (4) are formed in an array form on the surface opposite to the surface, onto which a light (L) to be detected enters, of the n-type silicon substrate (3). An area corresponding to a photodiode (4)-formed area on the light-to-be-detected (L)-incident surface of the n-type silicon substrate (3) is at least coated to provide a resin film (6) that transmits the light to be detected (L).

77. 发明公开

EP2287657A1 DISPLAY DEVICE 审中-公开
标题翻译： ANZEIGEVORRICHTUNG
公开(公告)号：EP2287657A1
公开(公告)日：2011-02-23
申请号：EP09758259.7
申请日：2009-05-28
申请人： Sharp Kabushiki Kaisha
发明人： KATOH, Hiormi , Brown, Christopher
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/1368 , G09F9/30 , H01L31/10
CPC分类号： G06F3/0412 , G02F1/13338 , G02F2001/13312 , G06F3/042 , H01L31/101
摘要： Provided is a display device with a photosensor having little variation between sensors. The display device includes a photosensor in a pixel region of an active matrix substrate. The photosensor includes a photodetection element (M4) that receives incident light, a capacitor (C1), one electrode of which is connected to the photodetection element (M4), that accumulates output current from the photodetection element, reset signal wiring (RST) that supplies a reset signal to the photosensor, readout signal wiring (RWS) that supplies a readout signal to the photosensor, and a sensor switching element (M2) that, in accordance with the readout signal, reads out the output current accumulated in the capacitor (C1) from when the reset signal is supplied until when the readout signal is supplied. A phototransistor is used as the photodetection element (M4).
摘要翻译：提供一种具有光传感器的显示装置，其在传感器之间具有很小的变化。显示装置包括在有源矩阵基板的像素区域中的光电传感器。光传感器包括接收入射光的光检测元件（M4），其一个电极连接到光电检测元件（M4）的电容器（C1），其累积来自光电检测元件的输出电流，复位信号布线（RST）向光电传感器提供复位信号，向光传感器提供读出信号的读出信号布线（RWS）以及根据读出信号读出在电容器中累积的输出电流的传感器开关元件（M2） C1）从提供复位信号直到提供读出信号时。光电晶体管用作光电检测元件（M4）。

78. 发明公开

EP2214150A4 IMAGE DISPLAY DEVICE 审中-公开
公开(公告)号：EP2214150A4
公开(公告)日：2011-02-23
申请号：EP08853866
申请日：2008-11-17
申请人： SHARP KK
发明人： SAKAMOTO MAYUKO , KATOH HIROMI , BROWN CHRISTOPHER
IPC分类号： G09F9/30 , G02F1/133 , G02F1/1335 , G02F1/1368 , H01L27/146 , H01L31/10
CPC分类号： G02F1/13318 , G02F1/13338 , G02F1/133514 , G02F1/1362 , G02F2001/13312 , H01L27/14621 , H01L27/14632 , H01L27/14643

79. 发明公开

EP1470574A4 ENHANCED PHOTODETECTOR 有权转让
标题翻译： VERBESSERTER FOTODETEKTOR
公开(公告)号：EP1470574A4
公开(公告)日：2011-02-16
申请号：EP03708942
申请日：2003-02-03
申请人： PICOMETRIX LLC
发明人： KO CHENG C , LEVINE BARRY
IPC分类号： H01L21/00 , H01L31/10 , H01L20060101 , H01L29/732 , H01L31/00 , H01L31/0304 , H01L31/0328 , H01L31/075 , H01L31/101 , H01L31/103 , H01L31/105 , H01L31/109
CPC分类号： H01L31/105 , H01L31/03042 , H01L31/102 , Y02E10/544

80. 发明公开

EP1767911A4 PHOTODETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：EP1767911A4
公开(公告)日：2010-09-08
申请号：EP05758353
申请日：2005-07-11
申请人： HAMAMATSU PHOTONICS KK
发明人： SUZUKI TAKASHI , TADAMASA ITSUSHI
IPC分类号： G01J1/44 , H01L31/10
CPC分类号： G01J1/46 , G01J1/0488 , G01J1/1626

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