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71. 发明公开

EP4249629A1 METHOD FOR MANUFACTURING THIN FILM 审中-实审
公开(公告)号：EP4249629A1
公开(公告)日：2023-09-27
申请号：EP21894643.2
申请日：2021-11-16
申请人： ADEKA CORPORATION
发明人： NISHIDA, Akihiro , HATASE, Masako , YOSHINO, Tomoharu , OOE, Yoshiki , MITSUI, Chiaki
IPC分类号： C23C16/18 , C23C16/40 , C23C16/455 , H01L21/31 , H01L21/312 , H01L21/316
摘要： Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300°C or more and less than 450°C to form the thin-film containing a hafnium atom on the surface of the substrate:

wherein R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R 3 and R 4 each independently represent an alkyl group having 1 to 3 carbon atoms.

72. 发明公开

EP4247995A1 CLEANING MATERIALS AND PROCESSES FOR LITHIUM PROCESSING EQUIPMENT 审中-实审
公开(公告)号：EP4247995A1
公开(公告)日：2023-09-27
申请号：EP21895497.2
申请日：2021-11-17
申请人： Applied Materials, Inc.
发明人： CHAKRABORTY, Tapash , DEEPAK, Nitin , GORADIA, Prerna Sonthalia , UPADHYE, Bahubali S. , BAGUL, Nilesh Chimanrao , HERLE, Subramanya P. , SIVARAMAKRISHNAN, Visweswaren
IPC分类号： C23C16/44 , C23C14/56

73. 发明授权

EP4058617B1 AREA SELECTIVE ATOMIC LAYER DEPOSITION METHOD AND TOOL 有权
公开(公告)号：EP4058617B1
公开(公告)日：2023-09-27
申请号：EP20808540.7
申请日：2020-11-12
发明人： MAMELI, Alfredo , FAWZY, Ahmed , ROOZEBOOM, Freddy , POODT, Paulus Willibrordus George
IPC分类号： C23C16/04 , C23C16/455 , C23C16/54

74. 发明授权

EP3991888B1 CUTTING TOOL 有权
公开(公告)号：EP3991888B1
公开(公告)日：2023-09-06
申请号：EP20873522.5
申请日：2020-06-22
发明人： KIDO, Yasuki , PASEUTH, Anongsack , OKUNO, Susumu
IPC分类号： C23C16/30 , C23C16/34 , C23C16/36 , C23C16/40 , C23C16/455 , C23C28/04 , C23C28/00 , C23C30/00 , B22F3/24 , B22F5/00 , C22C29/08

75. 发明公开

EP4235735A1 HIGH POWER GENERATOR AND METHOD OF SUPPLYING HIGH POWER PULSES 审中-公开
公开(公告)号：EP4235735A1
公开(公告)日：2023-08-30
申请号：EP22461511.2
申请日：2022-02-28
申请人： TRUMPF Huettinger Sp. Z o. o.
发明人： The designation of the inventor has not yet been filed
IPC分类号： H01J37/32 , H01J37/34 , C23C14/34 , C23C16/515 , H03K3/00 , H03K4/00
摘要： High-power- (HP-) generator (10) and method to deliver pulsed high power with a high value of voltage and/or high current value to a capacitive load, in particular to a plasma process, comprising:
- several low-power- (LP-) generators (14, 16 ,18),
o each LP-generator (14, 16, 18) comprising an energy storage component (C1, L1), wherein in use the energy storage component (C1, L1) is charged to a predefined value related to the energy storage component,
o each LP-generator (14, 16, 18) supplying, in use, at its output an LP-generator-value which corresponds to the value of the energy storage component (C1, C2, Cn L1, L2, Ln) incorporated in the respective LP-generator (14, 16, 18),

- a coupling (20) in which the LP-generators (14, 16, 18) are electrically connected such that a coupling-value at the output of the coupling (20), which corresponds to the output value of the HP-generator (10), may be obtained, and which is, in use, at least in some states of the HP-generator (10) higher than the LP-generator-value at the output of one of the LP-generators (14, 16, 18),
- a control unit (22) configured to select the contribution of LP-generators (14, 16, 18) to the output value of the HP-generator (10) during power delivery of the HP-generator (10), in order to generate a rise and/or decay of a pulse at the output of the coupling (20),
- wherein a damping circuit (50) is positioned between several, in particular all of the LP-generators (14, 16, 18) in an open chain configuration, where in particular the damping circuit (50) comprises a resistor (R) and/or an inductivity (L).

76. 发明公开

EP4234489A1 SECONDARY AND TERTIARY COMPOSITE PARTICLES 审中-实审
公开(公告)号：EP4234489A1
公开(公告)日：2023-08-30
申请号：EP22158616.7
申请日：2022-02-24
申请人： Cenate AS
发明人： KIRKENGEN, Martin , SAUAR, Erik , FILTVEDT, Werner
IPC分类号： C01B32/05 , C01B33/027 , H01M4/04 , H01M4/134 , H01M10/0562 , C23C16/22 , C23C28/04 , H01M4/36 , H01M4/38 , H01M4/583 , H01M4/62
摘要： This invention relates to a method for manufacturing secondary composite particles, secondary composite particles, a method for manufacturing tertiary composite particles, the tertiary composite particles, and a secondary electrochemical cell utilising the secondary or tertiary composite particles as the active material of the negative electrode of the secondary electrochemical cell, wherein each tertiary composite particle comprises a plurality of secondary composite particles embedded in a second matrix being predominantly made of carbon, wherein each secondary composite particle comprises a plurality of primary particles embedded in a first matrix, wherein the primary particles are predominantly composed of silicon and wherein the first matrix comprises silicon and carbon.

77. 发明公开

EP4233094A1 RAPID CHAMBER VACUUM LEAK CHECK HARDWARE AND MAINTENANCE ROUTINE 审中-实审
公开(公告)号：EP4233094A1
公开(公告)日：2023-08-30
申请号：EP21883515.5
申请日：2021-09-28
申请人： Applied Materials, Inc.
发明人： HILKENE, Martin A. , SRIVASTAVA, Surendra Singh
IPC分类号： H01L21/67 , C23C16/44 , C23C16/46 , G01M3/34

78. 发明公开

EP4230294A1 METHOD FOR PRODUCING METAL CATALYST HAVING COMPOSITE FILM DEPOSITED THEREON BY MEANS OF ALD PROCESS, AND METAL CATALYST ACCORDING THERETO 审中-实审
公开(公告)号：EP4230294A1
公开(公告)日：2023-08-23
申请号：EP21880497.9
申请日：2021-10-13
申请人： Hanwha Solutions Corporation , Korea Advanced Institute of Science and Technology
发明人： CHO, Young Jin , KIM, Do Heung , OH, Myung Seok , IM, Sung Gap , JANG, Won Tae , CHOI, Keonwoo
IPC分类号： B01J37/02 , B01J23/42 , C23C16/455 , C23C16/44 , C23C16/40
摘要： The present disclosure relates to a method for preparing a metal catalyst deposited with a layer film by ALD process and a metal catalyst thereof. More specifically, the present disclosure is intended to inhibit sintering of catalyst particles to prevent activity decrease, thus stably maintaining high activity, and simultaneously, providing heat stability, by layer-by-layer deposition of a layer film with alternation of different inorganic films on the surface of a metal catalyst in an ALD process.

79. 发明公开

EP4225967A1 AN ATOMIC LAYER DEPOSITION APPARATUS AND A METHOD 审中-实审
公开(公告)号：EP4225967A1
公开(公告)日：2023-08-16
申请号：EP21879589.6
申请日：2021-10-11
申请人： Beneq Oy
发明人： JAUHIAINEN, Mika , SOININEN, Pekka
IPC分类号： C23C16/455

80. 发明公开

EP4225964A1 SELECTIVE DEPOSITION OF SILICON AND OXYGEN CONTAINING DIELECTRIC FILM ON DIELECTRICS 审中-实审
公开(公告)号：EP4225964A1
公开(公告)日：2023-08-16
申请号：EP21892990.9
申请日：2021-11-15
申请人： Versum Materials US, LLC
发明人： KANJOLIA, Ravindra , LIU, Guo , POTYEN, Mark , WOODRUFF, Jacob , ZOPE, Bhushan , LEI, Xinjian
IPC分类号： C23C16/04 , C23C16/455 , C23C16/40 , C23C16/30 , C23C16/02 , B05D1/00 , H01L21/285 , H01L21/02

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