专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明公开

EP0902475A3 A single-sided package including an integrated circuit semiconductor chip and inductive coil and method therefor 审中-公开
标题翻译：面式外壳与半导体芯片和感应线圈及其制造方法
公开(公告)号：EP0902475A3
公开(公告)日：2000-07-19
申请号：EP98117441.0
申请日：1998-09-15
申请人： MICROCHIP TECHNOLOGY INC.
发明人： Fernandez, Joseph , Furey, Lee
IPC分类号： H01L23/538 , G06K19/077
CPC分类号： G06K19/0775 , G06K19/07749 , H01L23/645 , H01L2924/0002 , H01L2924/00
摘要： A single-sided package is disclosed which includes an integrated circuit semiconductor chip and an inductive coil on one surface of the package. The chip is located within the innermost turn of the inductive coil and electrical wire bonds connect terminal pads of the chip to end portions of the inductive coil. A glob of plastic encapsulating material covers and protects the chip and its wire bonds on the substrate surface containing both the inductive coil and the chip.

72. 发明公开

EP0929207A3 Multi-layer ceramic substrate and method for producing the same 有权
标题翻译： KeramischerTrägerfürMehrfach-Schichten sowie Herstellungsverfahren
公开(公告)号：EP0929207A3
公开(公告)日：2000-03-08
申请号：EP98124881.8
申请日：1998-12-30
申请人： Murata Manufacturing Co., Ltd.
发明人： Sunahara, Hirofumi A170 Intellect. Property Dept.,
IPC分类号： H05K3/46 , H05K1/16
CPC分类号： H01L25/50 , H01L21/4857 , H01L23/5383 , H01L23/642 , H01L23/645 , H01L2924/0002 , H01L2924/09701 , H05K1/16 , H05K1/185 , H05K3/4629 , H05K2201/10636 , Y02P70/611 , Y10T29/4913 , Y10T428/24926 , H01L2924/00
摘要： The present invention provides a method for producing a high-density multi-layer ceramic substrate (1) with stable characteristics, the substrate (1) incorporating therein a passive component (10, 11) such as a high-precision capacitor or inductor. The method comprises the steps of providing compact blocks containing a green ceramic functional material to form passive components (10, 11); providing a composite green laminate which contains a ceramic green sheet having a plurality of ceramic green sheets comprising a ceramic insulating material and in which the compact blocks are built in pre-disposed spaces and a paste containing a metal inducing, during firing, oxidation reaction accompanied by expansion is provided in space between inside walls of the spaces and the compact blocks; firing the composite green laminate in a state in which the laminate is sandwiched by the sheet-like supports formed of green ceramics that cannot be sintered at the sintering temperature, so as to prevent shrinkage of the laminate; and removing the unsintered sheet-like supports.
摘要翻译：本发明提供了一种具有稳定特性的高密度多层陶瓷基板（1）的制造方法，其特征在于：衬底（1）内装有诸如高精度电容器或电感器的无源元件（10,11）。该方法包括以下步骤：提供含有绿色陶瓷功能材料的紧凑块，以形成无源部件（10,11）; 提供一种复合绿色层压体，其包含具有多个包含陶瓷绝缘材料的陶瓷生片的陶瓷生片，并且其中紧凑块被构建在预先设置的空间中，并且含有金属的糊料在烧制期间引起氧化反应伴随通过膨胀在空间的内壁和紧凑的块之间的空间中设置; 在由烧结温度不能烧结的绿色陶瓷形成的片状载体夹持层压体的状态下烧成复合绿色层压体，以防止层叠体的收缩; 并除去未烧结的片状载体。

73. 发明公开

EP0897256A4 SEMICONDUCTOR DEVICE 失效
标题翻译： HALBLEITERVORRICHTUNG
公开(公告)号：EP0897256A4
公开(公告)日：1999-09-15
申请号：EP97919662
申请日：1997-04-23
申请人： OKAMURA SUSUMU , IKEDA TAKESHI
发明人： NAKANISHI TSUTOMU , OKAMOTO AKIRA
IPC分类号： H01L23/31 , H01L23/552 , H01L23/58 , H01L23/64 , H05K9/00
CPC分类号： H01L24/48 , H01L23/3135 , H01L23/552 , H01L23/585 , H01L23/645 , H01L24/49 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/49175 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01032 , H01L2924/01056 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/10162 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/3025 , H01L2224/45099 , H01L2924/00 , H01L2924/00012 , H01L2224/85399
摘要： It is the object to minimize a magnetic influence, on the outside, of a semiconductor chip which is formed on a substrate includes inductor conductors. A semiconductor chip 2 including inductor conductors is mounted on a substrate 1 and a plurality of through holes 8 are formed in the area on the outside of the mounting position. Shielding members 4 are formed on the chip mounting side and the opposite side of the substrate 1 and in the through holes 8 so as to cover the semiconductor chip 2 with the shielding members 4 from both sides of the substrate 1. Therefore, magnetic fluxes from a circuit formed on the semiconductor chip 2 do not leak out from the shielding members 4, but circulate inside the shielding members 4.
摘要翻译：在基板上形成的包含电感器导体的半导体芯片的磁性影响被最小化。包含电感器导体的半导体芯片（2）安装在板（1）上，并且在安装的芯片（2）外侧的区域中形成多个通孔（8）。在芯片安装侧和电路板（1）的相对侧以及通孔（8）中形成屏蔽构件（4），以便用构件（4）从芯片（2）的两侧覆盖芯片板（1）。因此，来自形成在芯片（4）上的电路的磁通不会从部件（4）漏出，而是在部件（4）内部循环。

74. 发明公开

EP0884783A3 A micromagnetic device for power processing applications and method of manufacture therefor 失效
标题翻译：磁性微电源装置及其制造方法
公开(公告)号：EP0884783A3
公开(公告)日：1999-08-18
申请号：EP98304525.3
申请日：1998-06-09
申请人： Lucent Technologies Inc.
发明人： Kossives, Dean Paul , Lotfi, Ashraf Wagih , Schneemeyer, Lynn Frances , Steigerwald, Michael Louis , Van Dover, Robert Bruce
IPC分类号： H01L27/01 , H01F17/00
CPC分类号： H01L23/645 , H01F17/0006 , H01F41/046 , H01L23/5227 , H01L27/016 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides a power micromagnetic integrated circuit (400) having a ferromagnetic core (490), a method of manufacture therefor, and a power processing circuit employing the same, that includes: a substrate (410), an insulator (430) coupled to the substrate, and a metallic adhesive (480,485) that forms a bond between the insulator (430) and the ferromagnetic core (490) to secure the ferromagnetic core to the substrate.

75. 发明公开

EP0932255A2 MCM with high Q overlapping resonator 有权
标题翻译：多芯片模块überlappendem谐振器hohenQualitätsfaktors
公开(公告)号：EP0932255A2
公开(公告)日：1999-07-28
申请号：EP99300328.4
申请日：1999-01-19
申请人： LUCENT TECHNOLOGIES INC.
发明人： Tai, King Lien , Zhao, Jingsong
IPC分类号： H03H3/00
CPC分类号： H01P7/082 , H01L23/645 , H01L2224/16 , H01L2924/15153 , H01L2924/15165 , H01L2924/19103 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H03H7/0115 , H03H2001/0085 , H05K1/165
摘要： An MCM including a resonator made using conventional MCM fabrication techniques. The MCM's resonator is constructed with overlapping first and second spiral-shaped regions of metallic material separated by a layer of dielectric material. A via disposed in the layer of dielectric material, couples the spiral-shaped regions of metallic material together, thereby utilizing self winding and internal capacitance to gain resonance at frequencies between 500 MHz to 3GHz. The internal capacitance is increased by controlling the overlap between the first and second spiral-shaped regions of metallic materials. On a high-resistivity substrate, the monolithic resonator achieves a Q of at least 19 at approximately 900MHz and at least 24 at approximately 2GHz.
摘要翻译：包括使用常规MCM制造技术制造的谐振器的MCM。 MCM的谐振器由重叠的第一和第二螺旋形区域的金属材料构成，并由一层介电材料隔开。设置在电介质材料层中的通孔将金属材料的螺旋形区域耦合在一起，由此利用自绕组和内部电容来在500MHz至3GHz之间的频率处获得谐振。通过控制金属材料的第一和第二螺旋形区域之间的重叠来增加内部电容。在高电阻率基板上，单片谐振器在大约900MHz处获得至少19的Q，在大约2GHz下达到至少24的Q。

76. 发明公开

EP0888637A1 SEMICONDUCTOR INTEGRATED CIRCUIT WITH INDUCTOR 失效
标题翻译：半导体电路INDUKTOR
公开(公告)号：EP0888637A1
公开(公告)日：1999-01-07
申请号：EP97945049.0
申请日：1997-11-03
申请人： Koninklijke Philips Electronics N.V.
发明人： LEE, Sheng-Hann
IPC分类号： H01L25 , H01L21 , H01L23
CPC分类号： H01L28/10 , H01L23/645 , H01L2924/0002 , H01L2924/00
摘要： An inductive structure for an integrated circuit. The inductor has a first turn that shields the other turns of the inductor from a proximate ground plane. Multiple turns are disposed one above another in respective metallization layers of the integrated circuit. The turns are partial loops and are electrically coupled end-to-end with vias. Predetermined ones of the turns have additional portions in different layers. An additional portion of a turn is an electrically conductive strip deposited above the turn in a higher metallization layer and electrically coupled to the turn, thereby increasing the surface area of the turn and decreasing resistance of the turn. A buried n-type loop disposed below the first turn and below the surface of the substrate shields the first turn from the capacitive effects of the substrate.

77. 发明公开

EP0887861A1 Dispositif semi-conducteur à moyen d'échanges à distance 失效
标题翻译： Halbleiteranordnung mit getrennten Auswechselungsmitteln
公开(公告)号：EP0887861A1
公开(公告)日：1998-12-30
申请号：EP98401561.0
申请日：1998-06-25
申请人： SGS-THOMSON MICROELECTRONICS S.A. , FRANCE TELECOM
发明人： Jaouen, Hervé , Marty, Michel
IPC分类号： H01L23/64
CPC分类号： H01L23/48 , H01F17/0006 , H01L23/645 , H01L24/73 , H01L2224/16225 , H01L2924/01004 , H01L2924/01033 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15174 , H01L2924/15311 , H01L2924/16195 , H01L2924/19103 , H01L2924/19104 , H01L2924/30107
摘要： Dispositif semi-conducteur comprenant une pastille formant un circuit intégré et un substrat de connexion, dans lequel sont prévus, entre les faces juxtaposées de la pastille et du substrat, des points ou billes de connexion répartis sous la forme d'une matrice et dans lequel le substrat présente des moyens de connexion extérieure reliés auxdits points de connexion. Il comprend en outre au moins un moyen d'échanges (14) comprenant deux parties (15, 16), notamment des inductances (15, 16) à spires coplanaires couplées par induction magnétique, disposées à distance et au regard l'une de l'autre et susceptibles d'échanger entre elles des signaux, dans un sens et/ou dans l'autre, l'une desdites parties étant intégrée dans ladite pastille et constituant un composant dudit circuit intégré et l'autre partie étant portée par ledit substrat (6) et reliée auxdits moyens de connexion (7).
摘要翻译：半导体器件由形成集成电路的芯片（2）和连接基板（6）组成，连接点或球（10）位于芯片和基板表面之间，以与外部连接器相连的矩阵的形式分布 8）。该装置还包括两个部分（15,16）中的至少一个交换器（14），该交换器设置在彼此相距一定距离处并能够沿任一方向交换信号。其中一个部分集成在芯片中并形成其集成电路的组件，而另一个部分由衬底承载并连接到连接器（10）。衬底本身形成包含芯片的壳体的壁的一部分。

79. 发明公开

EP0643404A3 Inductive structures for semiconductor integrated circuits 失效
标题翻译： Industrtive Strukturenfürhalbleitende integrierte Schaltungen。
公开(公告)号：EP0643404A3
公开(公告)日：1995-11-08
申请号：EP94116854.4
申请日：1990-08-17
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Andoh, Naoto, Mitsubishi Denki K.K. , Inoue, Akira, Mitsubishi Denki K.K. , Nakajima, Yasuharu, Mitsubishi Denki K.K. , Nakahara, Kazuhito, Mitsubishi Denki K.K.
IPC分类号： H01F17/00 , H01F27/28
CPC分类号： H01L28/10 , H01F17/0006 , H01F17/0033 , H01F21/08 , H01F27/2804 , H01F2017/004 , H01F2017/0046 , H01F2017/0086 , H01L23/645 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A variable inductance element integrable with a semiconductor integrated circuit comprises an electrically insulating substrate (1) having opposed first and second surfaces, an electrical conductor disposed in a first spiral (62) on the first surface of the substrate (1), an electrically insulating film (61) disposed on the first surface and the first spiral (62), a second electrical conductor disposed in a second spiral (2) on the electrically insulating film (61) and inductively coupled to the first spiral (62), and means (68, 70) for producing and controlling an electrical current flow through one of said spirals.
摘要翻译：具有用于直接集成在半导体集成电路中的低寄生电容的感应结构。在一个实施例中，在基板（1）的表面上设置大致平面的螺旋形绕组（2）。通过穿过基板（1）的导电通孔（21,23）制成与螺旋（2）的内端（4）的电连接。螺旋（2）可以通过在螺旋（2）的相邻绕组之间具有交错布置的多个间隔开的导电柱（25）与衬底表面间隔开。变压器包括在半导体衬底（1）上设置在彼此顶部并由电绝缘膜（33）分隔开的两个绕组。绕组具有共同的中心开口，其中设置磁性材料（36）以改善绕组之间的感应耦合。变压器可以包括两个螺旋绕组（47,48），一个环绕另一个的螺旋绕组（47,48），每个形成有通孔（51,56）和电导体（52,53; 57,58），内部绕组（47）半导体衬底（1）和外部绕组（48）形成在设置在衬底（1）上并延伸穿过膜（41,42）和衬底（1）的绝缘膜（41,42）上。可变电感器包括由绝缘膜（61）分开的电感耦合螺旋绕组（62,2）和用于控制通过其中一个螺线的电流并由此控制另一个螺旋的有效电感的电流控制（68）。

80. 发明公开

EP0645815A3 High power semiconductor switch module 失效
标题翻译：高性能半导体开关模块。
公开(公告)号：EP0645815A3
公开(公告)日：1995-09-06
申请号：EP94202331.8
申请日：1994-08-16
申请人： DELCO ELECTRONICS CORPORATION
发明人： Lake, Donald Eugene , Eytcheson, Charles Tyler , Alhoussami, Aiman Ismail
IPC分类号： H01L23/64 , H01L25/07 , H01L25/16
CPC分类号： H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/49109 , H01L2224/73265 , H01L2924/00014 , H01L2924/01087 , H01L2924/10253 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A high power module (10) containing high power, high frequency semiconductor switching devices (18) and methods of operating the same provide high power and low inductance. The module (10) incorporates compositional, geometrical and electrical symmetry. The module (10) also includes short internal leads, special IC chip substrates, trimmable gate lead resistances, a special composite metal/ceramic baseplate and a special terminal conductor overlap.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式