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    • 80. 发明公开
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    • HALBLEITERANORDNUNG UND HERSTELLUNGSVERFAHREN
    • EP0715343A1
    • 1996-06-05
    • EP94924391.9
    • 1994-08-19
    • OHMI, Tadahiro
    • OHMI, TadahiroYAMADA, Keiichi Department of Electronics Faculty
    • H01L21/28
    • H01L21/76889H01L21/28518H01L2924/0002H01L2924/00
    • An object of the present invention is to provide a semiconductor device in which a contact resistance between an electrode and a semiconductor is reduced, and contact and structure between a semiconductor comprising a minute and extremely shallow and thin layer and an electrode and a method of manufacturing the same.
      At least one metallic layer and a semiconductor are continuously formed on a surface of a semiconductor without being exposed to the atmospheric air, a heat processing is executed thereto to react said metallic layer with said semiconductor for forming a compound of a metal and a semiconductor. Furthermore the present invention is characterized in that ion implantation is executed prior to heat processing. Also in the semiconductor device with a compound of said semiconductor and a metal formed in a contact section between the semiconductor and the electrode according to the present invention, a depth of an interface between said compound and said semiconductor is less than 22 nm, or a half of a thickness of said compound or more is positioned above a surface of said semiconductor.
      Furthermore if there is provided a multi-layered metallic wiring construction, a thin silicide layer is provided on a contact section for connecting the upper and lower metallic wirings.
    • 本发明的目的是提供一种半导体器件,其中电极和半导体之间的接触电阻减小,并且包括微小极薄的半导体和电极之间的接触和结构以及制造方法 一样。 在半导体表面上连续地形成至少一个金属层和半导体,而不暴露于大气中,对其进行热处理以使所述金属层与所述半导体反应以形成金属和半导体的化合物。 此外,本发明的特征在于,在热处理之前执行离子注入。 此外,在具有所述半导体的化合物的半导体器件和形成在根据本发明的半导体和电极之间的接触部分中的金属的情况下,所述化合物和所述半导体之间的界面的深度小于22nm,或者 所述化合物或更多的厚度的一半位于所述半导体的表面上方。 此外,如果提供多层金属布线结构,则在用于连接上下金属布线的接触部分上设置有薄的硅化物层。