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61. 发明授权

EP2924146B1 PHOTOCHEMICAL REACTION DEVICE 有权
标题翻译：光化学反应装置
公开(公告)号：EP2924146B1
公开(公告)日：2017-12-27
申请号：EP13856220.2
申请日：2013-11-08
申请人： Kabushiki Kaisha Toshiba
发明人： ONO, Akihiko , MIKOSHIBA, Satoshi , KITAGAWA, Ryota , TAMURA, Jun , KUDO, Yuki , HUANG, Chingchun
IPC分类号： C25B9/00 , C25B11/06 , H01L31/042 , C25B11/03 , C25B11/04 , C25B1/00 , C25B1/10 , C25B3/04 , H01G9/20 , H01L31/0687 , H01L31/076
CPC分类号： C25B1/003 , C25B1/10 , C25B3/04 , C25B9/00 , C25B11/03 , C25B11/0405 , H01G9/20 , H01L31/0687 , H01L31/076 , Y02E10/544 , Y02E10/548 , Y02E60/366
摘要： According to one embodiment, a photochemical reaction device comprises a laminated body and an ion transfer pathway. A laminated body comprises an oxidation catalyst layer for producing oxygen and protons by oxidizing water a reduction catalyst layer for producing carbon compounds by reducing carbon dioxide and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and developing charge separation with light energy. An ion transfer pathway moves ions between the oxidation catalyst layer side and the reduction catalyst layer side.

62. 发明授权

EP2834856B1 THIN FILM SOLAR CELL 失效
标题翻译：薄膜太阳能电池
公开(公告)号：EP2834856B1
公开(公告)日：2017-10-18
申请号：EP13772759.0
申请日：2013-04-02
申请人： LG Electronics Inc.
发明人： KIM, Soohyun , LEE, Hongcheol , CHUNG, Jinwon , AHN, Sehwon
IPC分类号： H01L31/076 , H01L31/0376
CPC分类号： H01L31/03685 , H01L31/0376 , H01L31/03762 , H01L31/076 , H01L31/077 , Y02E10/545 , Y02E10/548

63. 发明公开

EP3125305A1 METHOD FOR MANUFACTURING GERMANIUM BASED THIN FILM SOLAR CELLS WITH IMPROVED LIGHT INDUCED DEGRADATION PROPERTIES 审中-公开
标题翻译： HERSTELLUNGSVERFAHREN VON GERMANIUMBASIERTENDÜNNSCHICHTSOLARZELLENMIT VERBESSERTEN LICHTINDUZIERTEN DEGRADIERUNGSEIGENSCHAFTEN
公开(公告)号：EP3125305A1
公开(公告)日：2017-02-01
申请号：EP15306246.8
申请日：2015-07-30
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
发明人： Goyal, Prabal , Hong, Junegie , Urrejola, Ellias
IPC分类号： H01L31/0376 , H01L31/075 , H01L31/076 , H01L31/20
CPC分类号： H01L31/03767 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/075 , H01L31/076 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Method of forming an amorphous-silicon - germanium single layer to be applied in single, multi or tandem junction thin film solar cells, the method comprising at least the steps of:
- a) setting a substrate on a substrate holder inside a reactor chamber between an upper high frequency electrode and a bottom high frequency electrode, where the substrate is under high frequency power and differential of potential or voltage bias between both electrodes, where inter electrode distance is between 5mm to 50mm, preferably 11 mm;
- b) entering reaction gases comprising at least monosilane and hydrogen, with the addition of disilane and germanium, including:
∘ adjusting pressure values between 133 Pa to 1333 Pa, preferably 266 Pa of said chamber,
∘ supplying a high radio frequency of 13.56 MHz to 70 MHz for plasma ignition between upper and bottom electrodes of said chamber,
∘ creating an electrical discharge between both electrodes of said chamber, due to the applied high frequency power;

- c) applying a trigger power of high frequency plasma having a discharge power density of 400W/m 2 to 2020 W/m 2 to said electrodes for a short time of 1 to 15 seconds to ignite the plasma; and
- d) applying a lower power of high frequency plasma having a discharge power density of 40W/m 2 to 405W/m 2 to said electrodes for a good plasma cloud formation and thin film deposition.
摘要翻译：形成应用于单层，多层或串联结薄膜太阳能电池中的非晶硅 - 锗单层的方法，该方法至少包括以下步骤：a）将反应室内的衬底保持器上的衬底设置在上部高频电极和底部高频电极，其中基板处于高频功率和两个电极之间的电位或电压偏压的差异，其中电极间距离在5mm至50mm之间，优选为11mm; - b）加入至少含有甲硅烷和氢的反应气体，加入乙硅烷和锗，包括：调节所述室的133Pa至1333Pa，优选266Pa的压力值，以提供高的射频 13.56MHz至70MHz用于所述室的上部和底部电极之间的等离子体点火，由于所施加的高频功率，在所述室的两个电极之间产生放电; - c）将具有400W / m 2的放电功率密度的高频等离子体的触发功率施加到所述电极的时间为1至15秒的短时间为2020W / m 2以点燃所述等离子体; 以及 - d）向所述电极施加放电功率密度为40W / m 2至405W / m 2的高功率等离子体的较低功率，用于良好的等离子体云形成和薄膜沉积。

64. 发明授权

EP2831309B1 PHOTOELEKTROCHEMISCHE ZELLE, SYSTEM UND VERFAHREN ZUR LICHTGETRIEBENEN ERZEUGUNG VON WASSERSTOFF UND SAUERSTOFF MIT EINER PHOTOELEKTROCHEMISCHEN ZELLE UND VERFAHREN ZUR HERSTELLUNG DER PHOTOELEKTROCHEMISCHEN ZELLE 有权
标题翻译：为了制造光电化学电池PHOTO电化学电池系统和方法氢和氧光电化电池和方法，光驱动生产
公开(公告)号：EP2831309B1
公开(公告)日：2017-01-18
申请号：EP13710838.7
申请日：2013-03-15
申请人： Evonik Degussa GmbH
发明人： HOCH,Sachsa , BLUG, Matthias , BUSSE Jens , CALVET, Wolfram , KAISER, Bernhard , JAEGERMANN, Wolfram , HAHN, Hanna , ZANTHOFF, Horst-Werner
IPC分类号： C25B1/04 , C25B9/10 , C25B11/03 , C25B11/04 , H01L31/0725 , C25B1/00 , C25B1/10 , C25B9/08 , H01L31/076
CPC分类号： C25B1/003 , C25B1/04 , C25B1/10 , C25B9/08 , C25B9/10 , C25B11/035 , C25B11/04 , H01L31/076 , Y02E60/368 , Y02P20/135

65. 发明公开

EP2924146A4 PHOTOCHEMICAL REACTION DEVICE 有权
标题翻译：光电显示器VORRICHTUNG
公开(公告)号：EP2924146A4
公开(公告)日：2016-11-02
申请号：EP13856220
申请日：2013-11-08
申请人： TOSHIBA KK
发明人： ONO AKIHIKO , MIKOSHIBA SATOSHI , KITAGAWA RYOTA , TAMURA JUN , KUDO YUKI , HUANG CHINGCHUN
IPC分类号： C25B9/00 , C01B32/40 , C25B1/00 , C25B1/10 , C25B3/04 , C25B11/03 , C25B11/04 , C25B11/06 , H01G9/20 , H01L31/042 , H01L31/0687 , H01L31/076
CPC分类号： C25B1/003 , C25B1/10 , C25B3/04 , C25B9/00 , C25B11/03 , C25B11/0405 , H01G9/20 , H01L31/0687 , H01L31/076 , Y02E10/544 , Y02E10/548 , Y02E60/366
摘要： According to one embodiment, a photochemical reaction device comprises a laminated body and an ion transfer pathway. A laminated body comprises an oxidation catalyst layer for producing oxygen and protons by oxidizing water a reduction catalyst layer for producing carbon compounds by reducing carbon dioxide and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and developing charge separation with light energy. An ion transfer pathway moves ions between the oxidation catalyst layer side and the reduction catalyst layer side.
摘要翻译：根据一个实施方案，光化学反应装置包括层压体和离子转移通路。层叠体包括氧化催化剂层和氧化催化剂层，氧化催化剂层通过氧化水，通过还原二氧化碳生成碳化合物的还原催化剂层和在氧化催化剂层和还原催化剂层之间形成的半导体层，并用光能显影电荷分离。离子传递途径在氧化催化剂层侧和还原催化剂层侧之间移动离子。

66. 发明公开

EP2834856A4 THIN FILM SOLAR CELL 失效
标题翻译： DÜNNSCHICHTSOLARZELLE
公开(公告)号：EP2834856A4
公开(公告)日：2015-12-09
申请号：EP13772759
申请日：2013-04-02
申请人： LG ELECTRONICS INC
发明人： KIM SOOHYUN , LEE HONGCHEOL , CHUNG JINWON , AHN SEHWON
IPC分类号： H01L31/076 , H01L31/0376
CPC分类号： H01L31/03685 , H01L31/0376 , H01L31/03762 , H01L31/076 , H01L31/077 , Y02E10/545 , Y02E10/548

67. 发明公开

EP1973170A4 STACKED PHOTOELECTRIC TRANSDUCER 有权转让
标题翻译： STACKED PHOTO电转换器
公开(公告)号：EP1973170A4
公开(公告)日：2015-11-04
申请号：EP06842900
申请日：2006-12-19
申请人： KANEKA CORP
发明人： TAWADA YUKO , SAWADA TORU , SUEZAKI TAKASHI , YAMAMOTO KENJI
IPC分类号： H01L31/076 , C23C16/42 , H01L31/0264 , H01L31/0392 , H01L31/042
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit (3) and a crystalline silicon-based photoelectric conversion unit (4) stacked thereon or vice versa, an amorphous photoelectric conversion layer (3i) included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 µm and less than 0.17 µm, a crystalline photoelectric conversion layer (4i) included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 µm and less than 1.0 µm, and a silicon oxide layer (3n) of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer (4p) of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

68. 发明授权

EP2080216B1 METHOD FOR FORMING A FILM WITH A GRADED BANDGAP BY DEPOSITION OF AN AMORPHOUS MATERIAL FROM A PLASMA 有权
标题翻译：方法用于生产具有倾斜带距离层进行分离的无定形物质从等离子
公开(公告)号：EP2080216B1
公开(公告)日：2015-02-11
申请号：EP07819352.1
申请日：2007-10-26
申请人： Dow Corning Corporation , Ecole Polytechnique
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： H01J37/32 , C23C16/24 , C23C16/455 , C23C16/511 , H01L31/0376 , H01L31/065 , H01L31/076 , H01L31/20
CPC分类号： C23C16/45523 , C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/32678 , H01L31/03762 , H01L31/065 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521

69. 发明公开

EP2816600A1 Apparatus and method for manufacturing thin film type solar cell 审中-公开
标题翻译：装置和方法用于制造薄膜太阳能电池
公开(公告)号：EP2816600A1
公开(公告)日：2014-12-24
申请号：EP14185570.0
申请日：2011-09-05
申请人： Jusung Engineering Co. Ltd.
发明人： Yang, Cheol Hoon
IPC分类号： H01L27/142 , H01L21/67 , H01L21/677 , H01L31/075 , H01L31/076 , H01L31/18
CPC分类号： H01L31/18 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67173 , H01L21/6776 , H01L31/022425 , H01L31/0463 , H01L31/0468 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including: a first electrode forming unit forming a first electrode on a substrate, and forming a first separation part for separating the first electrode; an optic-electro conversion layer forming unit forming an optic-electro conversion layer over the substrate which includes the first electrode and the first separation part; a contact line forming unit removing a certain region of the optic-electro conversion layer formed on the first electrode to form a contact line; a printing unit printing a second electrode, which is connected to the first electrode through the contact line and separated at certain intervals with a second separation part therebetween, on the optic-electro conversion layer; and an etching process unit removing the optic-electro conversion layer in the second separation part to expose the first electrode in the second separation part, through a wet etching process.

70. 发明授权

EP1198013B1 Method of producing tandem thin-film solar cell 有权
标题翻译：串联的薄膜太阳能电池的制造方法
公开(公告)号：EP1198013B1
公开(公告)日：2014-05-14
申请号：EP01123269.1
申请日：2001-10-04
申请人： Kaneka Corporation
发明人： Sawada, Toru , Yoshimi, Masashi
IPC分类号： H01L31/20 , H01L31/076
CPC分类号： H01L31/076 , H01L31/046 , H01L31/1804 , H01L31/206 , Y02E10/547 , Y02E10/548 , Y02P70/521 , Y10T29/49355
摘要： A method of manufacturing a tandem thin-film solar cell is provided, the solar cell including a plurality of photoelectric conversion units (3, 4) stacked on a substrate (1), the photoelectric conversion units each having a p-type layer, an i-type photoelectric conversion layer and an n-type layer deposited in this order from a light-incident side of the solar cell, and at least a rear unit (4) among the photoelectric conversion units that is furthest from the light-incident side being a crystalline unit including a crystalline i-type photoelectric conversion layer (4i). The manufacturing method includes the steps of forming at least one (3) of the units on the substrate (1) by plasma CVD and immediately thereafter forming an i-type boundary layer (5i) to a thickness of at most 5 nm by plasma CVD, and thereafter removing the substrate (1) into the atmosphere to expose a surface of the i-type boundary layer (5i) to the atmosphere and then forming a crystalline unit (4) on the i-type boundary layer (5i) by plasma CVD.

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