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61. 发明公开

EP4043611A1 MULTILAYER BODY AND METHOD FOR PRODUCING SAME 审中-实审转让
公开(公告)号：EP4043611A1
公开(公告)日：2022-08-17
申请号：EP20873652.0
申请日：2020-09-11
申请人： Showa Denko K.K.
发明人： FURUYA, Akira , KOJIMA, Tadaaki , SUZUKI, Hiroshi
IPC分类号： C23C28/00 , B32B15/01 , C23C8/08 , C23C18/34 , C23C18/42 , C23C18/44 , C23C18/52
摘要： The object of the present invention is to provide a metallic material which can be employed as a constituent member of a semiconductor production device and has excellent corrosion resistance. A laminate according to the present invention comprises a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater.

62. 发明公开

EP3901327A1 PALLADIUM PLATING SOLUTION AND PLATING METHOD 审中-公开
公开(公告)号：EP3901327A1
公开(公告)日：2021-10-27
申请号：EP21166181.4
申请日：2021-03-31
申请人： C. Uyemura & Co., Ltd.
发明人： KANEKO, Yohei , OOGAMI, Yuhei , TANABE, Katsuhisa , MAEDA, Tsuyoshi
IPC分类号： C23C18/42 , C23C18/44
摘要： The purpose of the present invention is to provide a palladium plating solution and a plating method for improving a bath stability of a palladium plating, without decreasing a deposition property of the palladium plating. A palladium plating solution for improving a bath stability, without decreasing a deposition property, comprising: an aqueous palladium compound; one or more complexing agent containing a compound having at least an ethylenediamine or a propylenediamine skeleton; a formic acid or a formate; and a sulfur compound, wherein the palladium plating solution is having two or more sulfide groups in a molecule of the sulfur compound.

63. 发明公开

EP3730671A1 SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING SAME 审中-公开
公开(公告)号：EP3730671A1
公开(公告)日：2020-10-28
申请号：EP18890935.2
申请日：2018-10-25
申请人： JX Nippon Mining & Metals Corporation
发明人： WATANABE, Takuto , TSUCHIDA, Katsuyuki
IPC分类号： C23C18/42 , C23C18/36 , C23C18/44 , H01L21/60
摘要： Each embodiments of the present invention provides a semiconductor wafer which is suppressed in voids that are produced in the interface between a passivation film and an electroless nickel plating film, and which is configured such that an electrode pad is entirely covered by the electroless nickel plating film. A semiconductor wafer according to one embodiment of the present invention comprises, on a substrate, an electrode pad (12) and a passivation film (11) that covers the upper surface of the substrate and has an opening from which the electrode pad is exposed. This semiconductor wafer sequentially comprises, on the electrode pad (12), an electroless nickel plating film (13), an electroless palladium plating film (14) and an electroless gold plating film (15) in this order. A void, which is present in the interface between the passivation film (11) and the electroless nickel plating film (13), has a length (x) from the forefront of the void to the surface of the electrode pad of 0.3 µm or more and a width (y) of 0.2 µm or less; and the electrode pad (12) is entirely covered by the electroless nickel plating film (13).

64. 发明公开

EP3693495A1 ELECTROLESS PALLADIUM PLATING SOLUTION, AND ELECTROLESS PALLADIUM PLATED COATING 审中-公开
公开(公告)号：EP3693495A1
公开(公告)日：2020-08-12
申请号：EP18864662.4
申请日：2018-10-03
申请人： C. Uyemura & Co., Ltd.
发明人： MAEDA, Tsuyoshi , TANABE, Katsuhisa , WADA, Shinsuke
IPC分类号： C23C18/44
摘要： An object of the present invention is to provide an electroless Pd plating solution which enables formation of a Pd plating film forming a plating film having excellent wire bondability even after a high-temperature thermal history. An electroless Pd plating solution of the present invention solved above problems, the solution includes a Palladium compound, at least one selected from a group consisting of a hypophosphorous acid compound and a phosphorous acid compound, at least one selected from the group consisting of an amine borane compound and a hydroboron compound, and a complexing agent.

66. 发明公开

EP3564407A1 CYANIDE-FREE SUBSTITUTION GOLD PLATING SOLUTION COMPOSITION 无效
公开(公告)号：EP3564407A1
公开(公告)日：2019-11-06
申请号：EP16925513.0
申请日：2016-12-27
申请人： Kanto Kagaku Kabushiki Kaisha
发明人： TSUDA, Takahiro , TOKUHISA, Tomoaki , OHWADA, Takuo , SENDA, Kazutaka
IPC分类号： C23C18/44
摘要： A gold deposition accelerator for electroless gold plating comprising one or more alkali metal compound(s), wherein said alkali metal compound is not a compound comprising only sodium as an alkali metal, and said alkali metal compound is not only halide, only potassium sulfite, or only potassium sodium tartrate of an alkali metal, an electroless gold plating solution comprising said gold deposition accelerator, a gold plating method and a gold deposition accelerating method using the same and the like are provided.

67. 发明授权

EP3184667B1 MEANS FOR CARRYING OUT ELECTROLESS METAL DEPOSITION WITH ATOMIC SUB-MONOLAYER PRECISION 有权
公开(公告)号：EP3184667B1
公开(公告)日：2019-10-30
申请号：EP15461588.4
申请日：2015-12-23
申请人： Uniwersytet Warszawski
发明人： JURCZAKOWSKI, Rafal , POLCZYNSKI, Piotr , JANUSZEWSKA, Aneta , LEWERA, Adam , SZABAT, Hubert
IPC分类号： C23C18/16 , C23C18/31 , C23C18/42 , C23C18/44

69. 发明公开

EP3504355A1 METHOD FOR DIRECTLY DEPOSITING PALLADIUM ONTO A NON-ACTIVATED SURFACE OF A GALLIUM NITRIDE SEMICONDUCTOR 审中-实审转让
公开(公告)号：EP3504355A1
公开(公告)日：2019-07-03
申请号：EP17755493.8
申请日：2017-08-21
申请人： Atotech Deutschland GmbH
发明人： WALTER, Andreas
IPC分类号： C23C18/16 , C23C18/44 , H01L29/872 , H01L33/00 , H01L33/32

70. 发明公开

EP3489385A1 ELECTROLESS PALLADIUM/GOLD PLATING PROCESS 有权
公开(公告)号：EP3489385A1
公开(公告)日：2019-05-29
申请号：EP17858057.7
申请日：2017-08-02
申请人： Kojima Chemicals Co. Ltd.
发明人： KATO, Tomohito , WATANABE, Hideto
IPC分类号： C23C18/18 , C23C18/44 , H05K3/18 , H05K3/24
摘要： It is an object of the present invention to provide an electroless palladium/gold plating process that can form a palladium/gold plating film selectively only on the copper without generating abnormal palladium precipitation even in a compact sized single electrode or a wiring with a narrow L/S. In order to solve the above-described problem, the electroless palladium/gold plating process comprises: a step (S4) of carrying out a copper surface electric potential adjusting treatment by immersing the insulating base material with a surface on which the copper has been disposed in a sulfur-containing aqueous solution containing one or more sulfur compounds selected from the group consisting of a thiosulfuric acid salt and a thiol; a step (S5) of carrying out an electroless palladium plating treatment on the insulating base material in which the surface electric potential of the copper has been adjusted to form a palladium plating film on the copper; and a step (S6) of carrying out an electroless gold plating treatment on the insulating base material in which the palladium plating film has been formed on the copper to form a gold plating film on the palladium plating film.

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