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61. 发明公开

EP2611881A1 AQUEOUS ACIDIC SOLUTION AND ETCHING SOLUTION AND METHOD FOR TEXTURIZING SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES 审中-公开
标题翻译：酸水溶液和蚀刻溶液，AND METHOD FOR纹理单晶和多晶硅基材的表面
公开(公告)号：EP2611881A1
公开(公告)日：2013-07-10
申请号：EP11821199.4
申请日：2011-08-25
申请人： BASF SE
发明人： BRAUN, Simon , KLIPP, Andreas , RÖGER-GÖPFERT, Cornelia , BITTNER, Christian , SHEN, MeiChin , LIN, Chengwei
IPC分类号： C09K13/08 , H01L21/302
CPC分类号： H01L21/30604 , C09K13/08 , H01L21/30608 , H01L31/022425 , H01L31/02363 , H01L31/18 , Y02E10/50 , Y10T428/24355
摘要： An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1 ) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

62. 发明公开

EP2534222A1 VERFAHREN ZUR BESTIMMUNG DER KONZENTRATION VON SALPETERSÄURE 有权
标题翻译：方法用于确定一氧化氮的浓度
公开(公告)号：EP2534222A1
公开(公告)日：2012-12-19
申请号：EP11704408.1
申请日：2011-02-10
申请人： RENA GmbH
发明人： REGER, Hubert
IPC分类号： C09K13/08 , G01N21/33 , G01N21/39
CPC分类号： G01N21/33 , G01N2201/129
摘要： The invention relates to the field of the wet chemical treatment of silicon substrates. The invention in particular relates to a method for determining the concentration of nitric acid in aqueous process solutions as they are used for the treatment of substrates such as those made of silicon. The method is based on the determination of nitrate by means of UV spectrometry/photometry using elimination agents that effectively remove interfering absorptions caused by other substances. The concentration of nitride corresponds to that of nitric acid. According to the invention, a robust method is provided, with which the content of nitric acid in acid mixtures can be determined with great precision, more specifically both in unused acid mixtures and in acid mixtures used according to the intended use thereof.

63. 发明授权

EP1276701B1 ÄTZPASTEN FÜR ANORGANISCHE OBERFLÄCHEN 有权
标题翻译：蚀刻糊的无机表面
公开(公告)号：EP1276701B1
公开(公告)日：2012-12-05
申请号：EP01915409.5
申请日：2001-03-23
申请人： Merck Patent GmbH
发明人： KLEIN, Sylke , HEIDER, Lilia , WIEGAND, Claudia , KÜBELBECK, Armin , STOCKUM, Werner
IPC分类号： C03C15/00 , C09K13/08
CPC分类号： C03C15/00 , C09K13/08

64. 发明授权

EP2109648B1 CHEMICAL MECHANICAL PLANARIZATION COMPOSITION, SYSTEM, AND METHOD OF USE 有权
标题翻译：组成，系统和利用具有化学机械研磨方法
公开(公告)号：EP2109648B1
公开(公告)日：2012-08-01
申请号：EP07869084.9
申请日：2007-12-10
申请人： 3M Innovative Properties Company
发明人： GAGLIARDI, John J., , SAVU, Patricia M.,
IPC分类号： C09K3/14 , C09K13/08 , H01L21/321 , H01L21/3105 , C09G1/04 , B24B7/22
CPC分类号： B24B7/228 , C09G1/04 , H01L21/31053
摘要： The disclosure relates to chemical mechanical planarization (CMP) polishing compositions including proline and a fluorochemical surfactant. The wafer polishing composition may be used as a solution substantially free of abrasive particles, the composition of which can be adjusted to control Oxide Removal Rate and oxide over nitride Selectivity Ratio in Shallow Trench Isolation (STI) processing of semiconductor wafers using a fixed abrasive CMP process. In certain embodiments, the disclosure provides a working liquid for fixed abrasive CMP including proline and a fluorochemical surfactant at a pH from 9 to 11. When used in a fixed abrasive CMP system and method for STI, exemplary working liquids may yield an Oxide Removal Rate of at least 500 angstroms per minute, and an oxide over nitride Selectivity Ratio of at least 5.

65. 发明公开

EP2414299A1 GLASS HAVING ANTI-GLARE SURFACE AND METHOD OF MAKING 审中-公开
标题翻译：玻璃防眩光表面和方法
公开(公告)号：EP2414299A1
公开(公告)日：2012-02-08
申请号：EP10723413.0
申请日：2010-03-26
申请人： Corning Incorporated
发明人： CARLSON, Krista L. , HART, Shandon D. , NGUYEN, Kelvin , SABIA, Robert , STERNQUIST, Daniel A. , ZHANG, Lu
IPC分类号： C03C15/00 , C09K13/08
CPC分类号： C03C15/00 , C03C23/00 , C03C2217/77 , C09G1/00
摘要： A glass article having an anti-glare surface. The anti-glare surface has a distinctness-of-reflected image of less than 95, and a haze of less than or equal to 50%. In one embodiment, the glass article further includes a smudge-resistant surface disposed on the anti-glare surface. Methods of making the glass article and anti-glare surface are also described.

66. 发明公开

EP2372753A1 Gas Compositions for Cleaning the Interiors of Reactors as Well as for Etching Films of Silicon-Containing Compounds 有权
标题翻译：用于清洁反应器的内部，并且用于蚀刻含硅化合物的膜的气体组成
公开(公告)号：EP2372753A1
公开(公告)日：2011-10-05
申请号：EP11172271.6
申请日：2001-09-21
申请人： TOKYO ELECTRON LIMITED , Renesas Electronics Corporation , Panasonic Corporation , Daikin Industries, Ltd. , ANELVA CORPORATION , Sanyo Electric Co., Ltd. , Hitachi Kokusai Electric Inc. , Sony Corporation , Kanto Denka Kogyo Co., Ltd. , National Institute of Advanced Industrial Science and Technology
发明人： Sekiya, Akira , Fukae, Katsuya , Mitsui, Yuki , Tomizawa, Ginjiro
IPC分类号： H01L21/205 , C23C16/44 , C09K13/08 , C23F4/00 , H01L21/3213
CPC分类号： C09K13/00 , B08B7/00 , C23C16/4405 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A gas composition, for cleaning the interior of CVD chambers or etching a thin film comprising a silicon-containing compound or compounds, comprises FNO and further comprises O 2 and/or one or more inert gases.
摘要翻译：的气体组合物，用于清洁的CVD腔室的内部或蚀刻的薄膜，其包括含硅化合物或化合物，包括FNO并且进一步包含O 2和/或一种或多种惰性气体。

67. 发明公开

EP2031088A3 Wet clean process for recovery of chamber parts 审中-公开
标题翻译：用于回收室份湿法清洗工艺
公开(公告)号：EP2031088A3
公开(公告)日：2011-05-18
申请号：EP08162492.6
申请日：2008-08-18
申请人： Applied Materials, Inc.
发明人： Sun, Jennifer Y. , Thach, Senh , Zhu, Xi , Xu, Li , Khan, Anisul
IPC分类号： C23C16/44 , C23G1/12 , H01J37/32 , B08B3/08 , C09K13/08 , H01L21/02 , H01L21/321
CPC分类号： C23C16/4407 , C11D7/08 , C11D7/10 , C11D11/0047 , C11D11/0064
摘要： A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed (86) in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed (88) in water. The pores of the cleaned anodization may be resealed (90) by a submerging the part in hot agitated deionized water.

68. 发明授权

EP1381656B1 AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE 有权
标题翻译：与铜的具体防腐蚀水基清洗剂用于清洁无机残余物半导体衬底
公开(公告)号：EP1381656B1
公开(公告)日：2010-11-10
申请号：EP02717727.8
申请日：2002-03-27
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： WOJTCZAK, William, A. , SEIJO, Fatima, Ma. , BERNHARD, David , NGUYEN, Long
IPC分类号： C09K13/00 , C09K13/06 , C09K13/08 , H01L21/02
CPC分类号： H01L21/02071 , C09K13/08 , C11D7/265 , C11D7/266 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3263 , G03F7/425 , G03F7/426 , H01L21/02074 , H01L21/31138
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

69. 发明公开

EP2090675A1 Defect etching of germanium 有权
标题翻译：锗的缺陷蚀刻
公开(公告)号：EP2090675A1
公开(公告)日：2009-08-19
申请号：EP08150895.4
申请日：2008-01-31
申请人： IMEC
发明人： Souriau, Laurent , Terzieva, Valentina
IPC分类号： C23F1/24 , C09K13/08 , C09K13/12 , H01L21/306 , H01L21/3213
CPC分类号： G01N1/32 , C09K13/08 , C09K13/12
摘要： Defect etching is a fast and simple technique for the revelation of defects in single crystalline material. The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm.min -1 and 450 nm.min -1 , which makes it suitable to be used for revealing defects in a thin layer of germanium, i.e. in a layer of germanium with a thickness of between 20 nm and 10 µm, for example between 20 nm and 2 µm, between 20 nm and 1 µm or between 20 nm and 200 nm.
摘要翻译：缺陷蚀刻是用于揭示单晶材料缺陷的快速且简单的技术。本发明提供了一种用于揭示锗层中的缺陷的蚀刻溶液，一种使用这种蚀刻溶液来揭示锗层中的缺陷的方法以及一种用于制造这种蚀刻溶液的方法。根据本发明实施例的蚀刻溶液能够显示出4nm.min -1和450nm.min -1之间的蚀刻速率，这使得它适合用于揭示锗薄层中的缺陷，即在厚度为20nm和10μm之间，例如20nm和2μm之间，20nm和1μm之间或20nm和200nm之间的锗层中。

70. 发明公开

EP1360077A4 COMPOSITIONS FOR CLEANING ORGANIC AND PLASMA ETCHED RESIDUES FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：组成清洁和有机物，半导体等离子刻蚀的遗迹
公开(公告)号：EP1360077A4
公开(公告)日：2009-06-24
申请号：EP01957117
申请日：2001-07-10
申请人： EKC TECHNOLOGY INC
发明人： SMALL ROBERT J , PATEL BAKUL P , LEE WAI MUN , HOLMES DOUGLAS , DAVIOT JEROME , REID CHRISTOPHER
IPC分类号： C09K13/08 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/311 , B44C1/22 , C09K13/00 , H01L21/00
CPC分类号： G03F7/423 , C09K13/08 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/02063 , H01L21/02071 , H01L21/31111 , H01L21/31133
摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

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