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    • 68. 发明公开
    • Method for manufacturing a superconducting device having an extremely thin superconducting channel
    • 制造具有极薄的超导通道的超导装置的方法
    • EP0798790A1
    • 1997-10-01
    • EP97107771.4
    • 1992-12-14
    • SUMITOMO ELECTRIC INDUSTRIES, LIMITED
    • Nakamura, TakaoInada, HiroshiIiyama, Michitomo
    • H01L39/24
    • H01L39/146H01L39/2464H01L39/249H01L39/2496Y10S505/702Y10S505/728
    • A method for manufacturing a superconducting device, comprising the steps of forming on a principal surface of a substrate (5) a first oxide superconductor thin film (1) having a relatively thick thickness, forming a metal layer (14) on the first superconductor thin film, forming a SiO 2 layer (15) on the metal layer, selectively etching a centre portions of the SiO 2 layer (15), the metal layer (14) and the first oxide supercondcutor thin film (1) so that the portions of SiO 2 layer, the metal layer and the first oxide superconductor thin film is completely removed and a surface of the substrate (5) is exposed so as to form a superconducting source region and a superconducting drain region separately on the substrate and a source electrode (12) and a drain electrode (13) respectively on the superconducting source region and the superconducting drain region, forming a non-superconducting layer (20) having a half thickness of the superconducting source region and the superconducting drain region on the exposed surface of the substrate (5), forming a second extremely thin oxide superconductor thin film on the non-superconducting layer so that an extremely thin superconducting channel (10) which is connected to the superconducting source region and the superconducting drain region at the height of the middle portions is formed on the non-superconducting layer (20), forming a gate insulating layer (7) and a gate electrode (4) stacked on the gate insulating layer on a portion of the second oxide superconductor thin film above the non-superconducting layer, and removing the SiO 2 layer (15) so that the source electrode (12), and the drain electrode (13), are exposed.