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1. 发明授权

EP0506582B1 Process for preparing layered thin films 失效
标题翻译：一种用于生产多层薄膜工艺
公开(公告)号：EP0506582B1
公开(公告)日：1997-05-28
申请号：EP92400880.8
申请日：1992-03-30
申请人： Sumitomo Electric Industries, Ltd.
发明人： Tanaka, So , Nakamura, Takao , Iiyama, Michitomo
IPC分类号： H01L39/24
CPC分类号： H01L39/2422 , H01L39/2496 , Y10S505/702 , Y10S505/731 , Y10S505/732

2. 发明授权

EP0545816B1 Method for manufacturing a Josephson junction device having weak link of artificial grain boundary 失效
标题翻译：一种用于制造具有人工弱耦合晶界约瑟夫逊结元件的方法
公开(公告)号：EP0545816B1
公开(公告)日：1997-04-09
申请号：EP92403258.4
申请日：1992-12-02
申请人： Sumitomo Electric Industries, Ltd.
发明人： Tanaka, So , Inada, Hiroshi , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496

3. 发明授权

EP0488837B1 Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby 失效
标题翻译：一种生产具有超导层的厚度降低了超导器件形成的超导器件的工艺
公开(公告)号：EP0488837B1
公开(公告)日：1997-04-02
申请号：EP91402917.8
申请日：1991-10-30
申请人： Sumitomo Electric Industries, Ltd.
发明人： Nakamura, Takao , Inada, Hiroshi , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/146

4. 发明授权

EP0480814B1 Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same 失效
标题翻译：一种超导设备超薄通道oxidically超导材料和它们的制备方法
公开(公告)号：EP0480814B1
公开(公告)日：1996-04-24
申请号：EP91402677.8
申请日：1991-10-08
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Nakamura, Takao , Inada, Hiroshi , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/146 , Y10S505/702 , Y10S505/703 , Y10S505/729 , Y10T29/413

5. 发明授权

EP0475838B1 Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same 失效
标题翻译：具有超导层的厚度和降低的方法及其制备的超导器件
公开(公告)号：EP0475838B1
公开(公告)日：1996-03-06
申请号：EP91402409.6
申请日：1991-09-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： Nakamura, Takao , Inada, Hiroshi , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/146 , H01L39/225 , H01L39/2496 , Y10S505/702 , Y10S505/728

6. 发明公开

EP0546958A2 Superconducting field-effect transitor having an extremly thin superconducting channel formed of oxide superconductor material 失效
标题翻译：图案化从而产生氧化物超导材料和超导器件的薄层的方法。
公开(公告)号：EP0546958A2
公开(公告)日：1993-06-16
申请号：EP92403401.0
申请日：1992-12-14
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Inada, Hiroshi , Tanaka, So , Iiyama, Michitomo
IPC分类号： H01L39/24
CPC分类号： H01L39/2467 , H01L39/146 , Y10S505/728
摘要： A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO₂ layer on the oxide superconductor thin film, patterning the SiO₂ layer so as to form the same pattern as that of the oxide superconductor thin film which will be patterned, etching the oxide superconductor thin film by using the patterned SiO₂ layer as a mask, and removing the SiO₂ layer by using a weak HF solution, a buffer solution including HF or a mixture including HF
摘要翻译：一种用于氧化物超导体薄膜的图案的方法，包括形成在氧化物超导体薄膜SiO 2层的工序，在图案化的SiO 2层，以形成相同的图案做的氧化物超导薄膜whichwill被图案化，蚀刻氧化物超导体薄膜通过使用图案化的SiO 2层作为掩模，并且通过使用一个弱HF溶液，缓冲溶液包括HF或它们的混合物，包括RF除去SiO2层

7. 发明公开

EP0484252A3 Superconducting device formed of oxide superconductor material 失效
标题翻译：形成氧化物超导体材料的超导体器件
公开(公告)号：EP0484252A3
公开(公告)日：1992-08-12
申请号：EP91402935.0
申请日：1991-10-31
申请人： Sumitomo Electric Industries, Ltd.
发明人： Inada, Hiroshi , Nakamura, Takao , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/146
摘要： A supeconducting device comprises a stacked structure composed of a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in the named order. The stacked structure has an end surface extending from the first insulating layer to the second insulating layer. A fourth superconducting layer is formed to cover the end surface of the stacked structure through a third insulating layer. The four superconducting layer is in electric connection to the first and third superconducting layer but isolated from the second superconducting layer by the third insulating layer. The first to fourth superconducting layers are formed of an oxide superconductor thin film. A silicon containing layer formed adjacent to at least one of the first, third and fourth superconducting layers, but not in direct contact with the other superconducting layers.

8. 发明公开

EP0475838A3 Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same 失效
标题翻译：具有减小的氧化物超导层的厚度的超级结构及其制造方法
公开(公告)号：EP0475838A3
公开(公告)日：1992-07-08
申请号：EP91402409.6
申请日：1991-09-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： Nakamura, Takao , Inada, Hiroshi , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/146 , H01L39/225 , H01L39/2496 , Y10S505/702 , Y10S505/728
摘要： A superconducting device comprises first and second oxide superconducing regions of a relatively thick thickness formed directly on a principal surface of a substrate separately from each other, and a third oxide superconducting region of an extremely thin thickness formed directly on the principal surface of the substrate so as to bridge the first and second oxide superconducting regions. A barrier layer and a diffusion source layer is formed on the third oxide superconducting region, and an isolation region is formed to cover an upper portion or both side surfaces of the diffusion source layer. The first, second and third oxide superconducting regions and the isolation region are formed of the same oxide superconductor material, and the isolation region is diffused with a material of the diffusion source layer, so that the isolation region does not show superconductivity. Therefore, a superconducting current can flow between the first and second oxide superconducting regions through only the third oxide superconducting region. For formation of the superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on the principal surface of the substrate, and a barrier layer and a diffusion source layer are formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the two layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film on an upper portion or both side surfaces of the diffusion source layer.
摘要翻译：超导装置包括彼此分开直接形成在基板的主表面上的相对较厚厚度的第一和第二氧化物超导区域，以及直接形成在基板主表面上的极薄厚度的第三氧化物超导区域桥接第一和第二氧化物超导区域。在第三氧化物超导区域上形成阻挡层和扩散源层，形成隔离区以覆盖扩散源层的上部或两侧表面。第一，第二和第三氧化物超导区域和隔离区域由相同的氧化物超导体材料形成，并且隔离区域与扩散源层的材料扩散，使得隔离区域不显示超导性。因此，超导电流可以仅通过第三氧化物超导区域在第一和第二氧化物超导区域之间流动。为了形成超导装置，在基板的主表面上形成具有非常薄的厚度的第一氧化物超导体薄膜，并且在第一氧化物超导体薄膜的一部分上形成阻挡层和扩散源层。在第一氧化物超导体薄膜的暴露表面上生长第二氧化物超导体薄膜，直到两层嵌入到第二氧化物超导体薄膜中，使得扩散源层的材料扩散到第二氧化物超导体薄膜膜在扩散源层的上部或两侧表面上。

9. 发明公开

EP0488837A2 Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby 失效
标题翻译：一种制造具有由超导装置形成的超导层的厚度减小的超导器件的工艺。
公开(公告)号：EP0488837A2
公开(公告)日：1992-06-03
申请号：EP91402917.8
申请日：1991-10-30
申请人： Sumitomo Electric Industries, Ltd.
发明人： Nakamura, Takao , Inada, Hiroshi , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/146
摘要： For manufacturing a superconducting device, a compound layer which is composed of the same constituent elements of an oxide superconductor is formed on a surface of the substrate, and a gate electrode is formed on a portion of the compound layer. Portions of the compound layer at both sides of the gate electrode are etched using the gate electrode as a mask, so that a shallow step is formed on an upper surface of the compound layer and side surfaces of the step exposed. After that electric power is applied to the gate electrode to heat the gate electrode so as to carry out a heat-treatment on the portion of the compound layer under the gate electrode locally, so that a gate insulator formed directly under the the gate electrode and a superconducting channel which is constituted an extremely thin superconducting region composed of the oxide superconductor and formed under the gate insulator are produced in a self alignment to the gate electrode.
摘要翻译：为了制造超导器件，它是由氧化物超导体相同的构成元素的化合物的所有层形成在基板的一个表面上，并且一个栅电极形成在所述化合物层的一部分。在栅电极的bothsides化合物层的部分使用栅电极作为掩模来蚀刻，所以没有一个浅台阶形成在暴露的步骤的化合物层表面和侧表面的上表面上。做后的电力被施加到栅电极以加热所述栅电极，以便局部地进行在栅电极下的化合物层的所述部分的热处理，所以没有在栅电极之下直接形成栅极绝缘体和超导通道的所有其构成氧化物超导体组成的极薄的超导区和所述栅极绝缘体下形成以自对准到栅电极产生的。

10. 发明公开

EP0467777A2 Method for manufacturing superconducting device composed of oxide superconductor material and superconducting device manufactured thereby 失效
标题翻译：制造超导材料的超导装置的方法和由此产生的超导设备。
公开(公告)号：EP0467777A2
公开(公告)日：1992-01-22
申请号：EP91401989.8
申请日：1991-07-16
申请人： Sumitomo Electric Industries, Ltd.
发明人： Saitoh, Mitsuchika , Tanaka, Sou , Iiyama, Michitomo
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/728 , Y10S505/731 , Y10S505/732 , Y10S505/742 , Y10T428/24917
摘要： In a method of manufacturing a superconducting device which has a first thin film of oxide superconductor material formed on a substrate and a second thin film formed on the first thin film of oxide superconductor material, after the second thin film is deposited on the first thin film of oxide superconductor material, a multi-layer structure formed of the first and second thin films is patterned so that a side surface of the first thin film is exposed. In this condition, the whole of the substrate is heated in an O₂ atmosphere or in an O₃ atmosphere so that oxygen is entrapped into the first thin film of oxide superconductor material. Thereafter, the patterned multi-layer structure is preferably covered with a protection coating.
摘要翻译：在制造超导装置，其具有氧化物系超导材料的第一薄膜上形成的基片和一个第二薄膜形成在氧化物超导体材料的第一薄膜，第二薄膜后的方法沉积在第一薄膜氧化物超导体的材料制成，形成在第一和第二薄膜的多层结构被图案化，以便做的第一薄膜的一个侧面露出。在这种情况下，基片的整个在O2气氛下加热或在O3所以没有气氛中的氧被夹带的成氧化物超导体材料的第一薄膜。那里之后，图案化的多层结构优选地覆盖有一保护涂层。

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