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51. 发明授权

EP2328187B1 IMAGE PICKUP DEVICE, VISIBILITY SUPPORT APPARATUS, NIGHT VISION DEVICE, NAVIGATION SUPPORT APPARATUS, AND MONITORING DEVICE 失效
标题翻译：录音设备，能见度支撑装置，夜视仪，导航装置及支持;监测
公开(公告)号：EP2328187B1
公开(公告)日：2016-11-16
申请号：EP09812961.2
申请日：2009-07-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAGAI, Youichi , IGUCHI, Yasuhiro
IPC分类号： H01L31/10 , B60R1/00 , G08B25/00 , G08G1/16 , G08G3/02 , B82Y20/00 , H01L27/146 , H01L31/0352
CPC分类号： B82Y20/00 , H01L27/14649 , H01L27/14694 , H01L31/035236

52. 发明公开

EP2958145A4 BACKSIDE-ILLUMINATED ENERGY RAY DETECTION ELEMENT 有权
标题翻译：背后照亮能量束检测元件
公开(公告)号：EP2958145A4
公开(公告)日：2016-08-24
申请号：EP14751872
申请日：2014-01-24
申请人： HAMAMATSU PHOTONICS KK
发明人： MIYAZAKI YASUHITO , MAETA KENTARO , MURAMATSU MASAHARU
IPC分类号： H01L27/14 , H01L27/146 , H01L27/148 , H01L31/0352 , H01L31/10 , H04N5/367 , H04N5/369
CPC分类号： H01L31/0352 , H01L27/1462 , H01L27/1463 , H01L27/1464 , H01L27/14812 , H01L27/14831 , H01L31/10

53. 发明授权

EP1906458B1 PHOTODETECTION CIRCUIT 有权
标题翻译： FOTODETEKTIONSSCHALTUNG
公开(公告)号：EP1906458B1
公开(公告)日：2016-03-23
申请号：EP06768073.6
申请日：2006-07-11
申请人： HAMAMATSU PHOTONICS K.K.
发明人： SUZUKI, Takashi c/o Hamamatsu Photonics K.K.
IPC分类号： H01L31/10 , H04B10/69
CPC分类号： H04B10/6931 , H04B10/6911

54. 发明公开

EP2866274A4 PHOTOVOLTAIC ELEMENT 审中-公开
标题翻译：光伏组件
公开(公告)号：EP2866274A4
公开(公告)日：2016-02-17
申请号：EP13809087
申请日：2013-05-27
申请人： TORAY INDUSTRIES
发明人： SHIMOMURA SATORU , YAMAMOTO SHUHEI , KITAZAWA DAISUKE
IPC分类号： H01L51/42 , H01L31/10 , H01L51/44 , H01L51/46
CPC分类号： H01L51/0032 , C08G2261/124 , C08G2261/1412 , C08G2261/1426 , C08G2261/146 , C08G2261/3223 , C08G2261/3243 , C08G2261/514 , C08G2261/91 , H01L51/0036 , H01L51/0037 , H01L51/0043 , H01L51/42 , H01L51/4253 , H01L51/4273 , H01L51/441 , H01L2251/308 , Y02E10/549

55. 发明公开

EP2960951A1 DISPOSITIF OPTOELECTRONIQUE A JONCTION P-N PERMETTANT UNE IONISATION DE DOPANTS PAR EFFET DE CHAMP 有权
标题翻译： WITH P-N-TRANSITION，BY场效应可能的掺杂物的电离OPTO电子设备
公开(公告)号：EP2960951A1
公开(公告)日：2015-12-30
申请号：EP15173554.5
申请日：2015-06-24
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： Robin, Ivan-Christophe , Bono, Hubert
IPC分类号： H01L31/10 , H01L33/00 , H01L33/38 , H01L33/14
摘要： Dispositif optoélectronique (100) comportant une structure mesa (124) comprenant :
- une première (106) et une deuxième (108) portions de semi-conducteur formant une jonction p-n,
- une première électrode (112) reliée électriquement à la première portion qui est disposée entre la deuxième portion et la première électrode,

le dispositif comportant en outre:
- une deuxième électrode (116) reliée électriquement à la deuxième portion,
- un élément (118, 120) apte à ioniser des dopants de la première et/ou deuxième portion via une génération d'un champ électrique dans la première et/ou deuxième portion et recouvrant au moins une partie des flancs latéraux d'au moins une partie de la première et/ou de la deuxième portion de semi-conducteur et d'au moins une partie d'une zone de charge d'espace formée par les première et deuxième portions,

des faces supérieures de la première électrode et de la deuxième électrode forment une surface continue sensiblement plane (122).
摘要翻译：一种光电子装置，包括一个台面结构，包括：第一和形成pn结的第二半导体部，第一电极电连接到所述第一部分的所有其被所述第二部分与所述第一电极，所述装置进一步包括之间布置：第二电极电连接到所述第二部分，以元件能够通过电场的产生在所述第一和/或第二半导体部，以电离所述第一和/或第二半导体部的掺杂剂和重叠的至少一个的侧翼中的至少一个部分第一和/或第二半导体部的一部分，并且由所述第一和第二半导体部，所述第一电极的上表面和一个连续的基本上为平面的表面的第二电极的形式形成的空间电荷区中的至少一个部分的。

56. 发明公开

EP2805353A4 SOLID-STATE IMAGE SENSOR AND CAMERA 失效
标题翻译：固态图像传感器和摄像头
公开(公告)号：EP2805353A4
公开(公告)日：2015-12-23
申请号：EP13738370
申请日：2013-01-09
申请人： CANON KK
发明人： OKITA AKIRA , KOBAYASHI MASAHIRO
IPC分类号： H01L27/146 , H01L31/10 , H01L31/103 , H04N5/335
CPC分类号： H01L27/14812 , H01L27/14605 , H01L27/1461 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14806 , H01L31/103
摘要： An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion.

57. 发明公开

EP2821812A4 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和区域图像传感器
公开(公告)号：EP2821812A4
公开(公告)日：2015-10-21
申请号：EP12869938
申请日：2012-11-01
申请人： HAMAMATSU PHOTONICS KK
发明人： MASE MITSUHITO , SUZUKI TAKASHI , HIRAMITSU JUN
IPC分类号： G01S17/89 , G01C3/06 , H01L27/146 , H01L31/10
CPC分类号： G01C3/08 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14609 , H01L27/1461 , H01L27/14623 , H01L27/1464 , H01L27/14641
摘要： A first semiconductor region FD1 is disposed inside a charge generating region configured to generate charges in response to incident light so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. A third semiconductor region FD3 1 is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A photogate electrode PG1 is disposed on the charge generating region. A first gate electrode TX1 is disposed between the first semiconductor region FD1 and the charge generating region, and causes the signal charges from the charge generating region to flow into the first semiconductor region FD1 in response to an input signal. A third gate electrode TX3 1 is disposed between the third semiconductor region FD3 1 and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the third semiconductor region FD3 1 in response to an input signal.

58. 发明公开

EP2910556A1 NOVEL CONDENSED POLYCYCLIC AROMATIC COMPOUND AND USE THEREOF 有权
标题翻译：维也纳DAVON神经科技大学
公开(公告)号：EP2910556A1
公开(公告)日：2015-08-26
申请号：EP13846387.2
申请日：2013-10-17
申请人： Nippon Kayaku Kabushiki Kaisha
发明人： TAKIMIYA, Kazuo , SHINAMURA, Shoji , HAMADA, Masahiro , SADAMITSU, Yuichi
IPC分类号： C07D495/04 , H01L21/336 , H01L29/786 , H01L31/10 , H01L51/05 , H01L51/30 , H01L51/42 , H01L51/50
摘要： The present invention provides a fused polycyclic aromatic compound characterized in that the compound is represented by general formula (1) or general formula (2):

wherein R 1 to R 8 each independently represent an atom or a functional group selected from the group consisting of a hydrogen atom, a halogen atom, a hydrocarbon oxy group, an aromatic hydrocarbon group, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an ester group, an acyl group, a cyano group, and a substituted silyl group, X 1 to X 4 each independently represent a cyano group, an ester group, or an acyl group, and Y 1 to Y 4 each independently represent an oxygen atom, a sulfur atom, or a selenium atom.
摘要翻译：本发明提供一种稠合多环芳族化合物，其特征在于该化合物由通式（1）或通式（2）表示：其中R 1至R 8各自独立地表示选自以下的原子或官能团：氢原子，卤素原子，烃氧基，芳香族烃基，脂肪族烃基，脂环族烃基，酯基，酰基，氰基和取代甲硅烷基，X 1〜X 4各自独立地表示氰基，酯基或酰基，Y 1〜Y 4各自独立地表示氧原子，硫原子或硒原子。

59. 发明公开

EP2763189A4 RADIATION DETECTOR 有权
公开(公告)号：EP2763189A4
公开(公告)日：2015-06-03
申请号：EP12835029
申请日：2012-08-06
申请人： HAMAMATSU PHOTONICS KK
发明人： YAMAMURA KAZUHISA
IPC分类号： H01L31/10 , G01T1/24 , H01L27/144 , H01L27/146 , H01L31/09
CPC分类号： H01L27/1446 , H01L27/1443 , H01L27/14603 , H01L31/115
摘要： A radiation detector RD1 has a semiconductor substrate 1 of a first conductivity type, a plurality of semiconductor regions 10 of a second conductivity type making junctions with the semiconductor substrate 1, and a plurality of electrodes 21, 23 joined to the corresponding semiconductor regions 10. The electrodes 21, 23 cover the corresponding semiconductor regions 10, when viewed from a direction perpendicular to a first principal face 1a. The semiconductor regions 10 include a plurality of first and second semiconductor regions 11, 13 in a two-dimensional array. The first semiconductor regions 11 arrayed in a first direction in the two-dimensional array out of the plurality of first semiconductor regions 11 are electrically connected to each other, and the second semiconductor regions 13 arrayed in a second direction intersecting with the first direction out of the plurality of second semiconductor regions 13 are electrically connected to each other.

60. 发明公开

EP2856505A1 DEVICES INCLUDING INDEPENDENTLY CONTROLLABLE ABSORPTION REGION AND MULTIPLICATION REGION ELECTRIC FIELDS 有权转让
标题翻译： - 具有吸附地区和倍增区域自主电控区域中的设备
公开(公告)号：EP2856505A1
公开(公告)日：2015-04-08
申请号：EP12877675.4
申请日：2012-05-29
申请人： Hewlett-Packard Development Company, L.P.
发明人： HUANG, Zhihong , FIORENTINO, Marco , SANTORI, Charles M. , PENG, Zhen , LIANG, Di , BEAUSOLEIL, Raymond G.
IPC分类号： H01L29/868 , H01L27/14 , H01L31/10
CPC分类号： H01L31/107 , G02B6/42 , H01L31/022408 , H01L31/028 , H01L31/035281 , H01L31/03529 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： A device includes a first region, a multiplication region, a second region, and an absorption region. The first region is associated with a first terminal, and the second region is associated with a second terminal. The first region is separated from the second region by the multiplication region. The absorption region is disposed on the multiplication region and associated with a third terminal. A multiplication region electric field is independently controllable with respect to an absorption region electric field, based on the first terminal, the second terminal, and the third terminal.

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