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51. 发明公开

EP3054489A1 OPTICAL RECEIVING CIRCUIT AND METHOD FOR MANUFACTURING SAME 有权转让
标题翻译：德国VERFAHREN ZURHERSTELLUNG DAVON的OPTISCHE EMPFANGSSCHALTUNG
公开(公告)号：EP3054489A1
公开(公告)日：2016-08-10
申请号：EP14850881.5
申请日：2014-10-01
申请人： Photonics Electronics Technology Research Association
发明人： SUZUKI, Yasuyuki , OKAMOTO, Daisuke
IPC分类号： H01L31/10 , H03F3/08 , H04B10/60
CPC分类号： G01J1/44 , G01J2001/446 , H01L21/02164 , H01L21/768 , H01L27/1443 , H01L31/02005 , H01L31/028 , H01L31/1808 , H03F1/083 , H03F3/08 , H04B10/60 , H04B10/693
摘要： An optical receiving circuit which suppresses a characteristic deterioration due to a wiring between a PD and a TIA and a method for manufacturing the optical receiving circuit are provided. A optical receiving circuit (300) comprises a photodiode (302), and a transimpedance amplifier (308) that supplies an electrical power source to the photodiode (302). The characteristic impedance of a wiring between the anode of the photodiode (302) and the transimpedance amplifier (308) is higher than the characteristic impedance of a wiring between the cathode of the photodiode (302) and the transimpedance amplifier (308).
摘要翻译：提供抑制由于PD与TIA之间的布线导致的特性恶化的光接收电路以及光接收电路的制造方法。光接收电路（300）包括光电二极管（302）和向光电二极管（302）提供电源的跨阻放大器（308）。光电二极管（302）的阳极和跨阻放大器（308）之间的布线的特性阻抗高于光电二极管（302）的阴极与跨阻放大器（308）之间的布线的特性阻抗。

52. 发明公开

EP3041049A1 ARRAY SUBSTRATE, RADIATION DETECTOR, AND WIRING SUBSTRATE 审中-公开
标题翻译：阵列基板，辐射探测器和布线基板
公开(公告)号：EP3041049A1
公开(公告)日：2016-07-06
申请号：EP14839426.5
申请日：2014-08-25
申请人： Kabushiki Kaisha Toshiba , Toshiba Electron Tubes & Devices Co., Ltd.
发明人： TAKIKAWA, Tatsuya , SHIMBA, Yuichi
IPC分类号： H01L27/146 , G01T1/20 , G01T7/00 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L27/144 , H01L29/786 , H01L31/10 , H04N5/32
CPC分类号： H01L27/124 , H01L27/1446 , H01L27/14603 , H01L27/14612 , H01L27/14636 , H01L27/14663
摘要： According to the embodiment, an array substrate includes a substrate, a plurality of first wirings provided on a surface of the substrate and extending in a first direction, a plurality of second wirings provided on the surface of the substrate and extending in a second direction crossing the first direction, a thin film transistor provided in each of a plurality of regions defined by the plurality of first wirings and the plurality of second wirings, a protective layer covering at least the plurality of first wirings and the plurality of second wirings, and a plurality of connection parts is provided in at least one of a region on the protective layer, a region between the plurality of first wirings and the substrate, and a region between the plurality of second wirings and the substrate, electrically is connected to each of the plurality of first wirings and the plurality of second wirings, and includes a conductive material having higher corrosion resistance than a material of the plurality of first wirings and the plurality of second wirings.
An end surface of the plurality of first wirings and the plurality of second wirings on peripheral side of the substrate is covered with the protective layer, and an end surface of the connection part on the peripheral side of the substrate is located at a periphery of the substrate in plan view.

53. 发明公开

EP2880693A4 PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER 有权
标题翻译：美国麻省理工学院麻省理工学院麻省理工学院
公开(公告)号：EP2880693A4
公开(公告)日：2016-06-01
申请号：EP13825872
申请日：2013-07-29
申请人： KLA TENCOR CORP
发明人： CHUANG YUNG-HO ALEX , FIELDEN JOHN
IPC分类号： H01L31/10 , G01N21/95 , H01J1/34 , H01J31/26 , H01J31/50 , H01L27/148
CPC分类号： H01J29/385 , G01N21/9501 , G02B21/125 , H01J1/34 , H01J31/26 , H01J31/50 , H01L27/14643 , H01L27/148 , H01L27/14806 , H01L27/14893
摘要： A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.
摘要翻译：在具有相对的照明（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如1-5nm）的硼层直接设置在输出表面上。在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成可选的抗反射材料层以增强光子进入硅衬底。在相对的照明（顶部）和输出（底部）表面之间产生可选的外部电位。光电阴极形成新型电子轰击电荷耦合器件（EBCCD）传感器和检测系统的一部分。

54. 发明公开

EP2945195A1 PHOTODETECTOR 有权
标题翻译：光电探测器
公开(公告)号：EP2945195A1
公开(公告)日：2015-11-18
申请号：EP13871194.0
申请日：2013-06-27
申请人： University-Industry Cooperation Group of Kyung Hee University
发明人： CHOI, Suk Ho , KIM, Sung , KIM, Chang Oh
IPC分类号： H01L31/10
CPC分类号： H01L31/028 , H01L31/03921 , H01L31/0745 , Y02E10/547
摘要： Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350nm to 1100nm, and first and second electrodes are formed on the photodetection layer.
摘要翻译：通过根据掺杂量评估所制造的石墨烯p-n垂直结的光电探测特性，提供包括石墨烯p-n均匀垂直结二极管的光电探测器。光检测器包括基板和具有pn均匀垂直结的石墨烯作为形成在基板上的光检测层，其中光检测层在350nm至1100nm范围内具有10E11（Jones）或更高的可检测性，并且第一和第二电极是形成在光电探测层上。

55. 发明公开

EP2219229A4 PHOTOELECTRIC CONVERSION MODULE 审中-公开
标题翻译：光电管转换器模块
公开(公告)号：EP2219229A4
公开(公告)日：2015-10-07
申请号：EP07849778
申请日：2007-12-04
申请人： KYOSEMI CORP
发明人： OGAWA HACHINORI , KANAYAMA ATSUSHI
IPC分类号： H01L31/10 , H04B10/25
CPC分类号： H01L31/0203 , G02B6/4274 , H01L2224/45144 , H01L2224/48137 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00

56. 发明公开

EP2866274A1 PHOTOVOLTAIC ELEMENT 审中-公开
标题翻译：光伏元件
公开(公告)号：EP2866274A1
公开(公告)日：2015-04-29
申请号：EP13809087.3
申请日：2013-05-27
申请人： Toray Industries, Inc.
发明人： SHIMOMURA, Satoru , YAMAMOTO, Shuhei , KITAZAWA, Daisuke
IPC分类号： H01L51/42 , H01L31/10
CPC分类号： H01L51/0032 , C08G2261/124 , C08G2261/1412 , C08G2261/1426 , C08G2261/146 , C08G2261/3223 , C08G2261/3243 , C08G2261/514 , C08G2261/91 , H01L51/0036 , H01L51/0037 , H01L51/0043 , H01L51/42 , H01L51/4253 , H01L51/4273 , H01L51/441 , H01L2251/308 , Y02E10/549
摘要： In order to provide a photovoltaic element having a high photoelectric conversion efficiency, this photovoltaic element comprises at least a positive electrode, a photoelectric conversion layer, an electron extraction layer, and a negative electrode, in that order, and is characterized in that the electron extraction layer contains at least one compound of the compound group represented by a particular general formula.
摘要翻译：为了提供具有高光电转换效率的光电元件，该光电元件依次至少包括正电极，光电转换层，电子提取层和负电极，并且其特征在于电子萃取层含有至少一种由特定通式表示的化合物组的化合物。

57. 发明公开

EP2688290A4 GAIN VARYING METHOD, VARIABLE GAIN PHOTOELECTRIC CONVERSION ELEMENT, VARIABLE GAIN PHOTOELECTRIC CONVERSION CELL, VARIABLE GAIN PHOTOELECTRIC CONVERSION ARRAY, READ-OUT METHOD, AND CIRCUIT 审中-公开
标题翻译： VERSTÄRKUNGSVARIIERUNGSVERFAHREN，光电转换元件具有可变增益，具有可变增益光电转换元件，ARRAY光电转换可变增益，读取方法和电路
公开(公告)号：EP2688290A4
公开(公告)日：2015-03-18
申请号：EP12757851
申请日：2012-03-15
申请人： NAT INST OF ADVANCED IND SCIEN
发明人： HAYASHI YUTAKA , NAGAMUNE YASUSHI , OTA TOSHITAKA
IPC分类号： H04N5/355 , H01L27/146 , H01L31/10 , H04N5/369
CPC分类号： H04N5/378 , H01L27/14609 , H04N5/355 , H04N5/374

58. 发明公开

EP2727154A4 A METHOD AND APPARATUS FOR DETECTING INFRARED RADIATION WITH GAIN 审中-公开
标题翻译：方法和设备红外辐射与增益检测
公开(公告)号：EP2727154A4
公开(公告)日：2015-03-04
申请号：EP12804913
申请日：2012-07-02
申请人： UNIV FLORIDA , NANOHOLDINGS LLC
发明人： SO FRANKY , KIM DO YOUNG , LEE JAE WOONG , PRADHAN BHABENDRA K
IPC分类号： H01L31/10 , H01L51/44 , H01L51/52
CPC分类号： H01L27/3227 , H01L27/288 , H01L31/022466 , H01L31/022475 , H01L31/022491 , H01L31/035218 , H01L31/09 , H01L31/143 , H01L31/1804 , H01L31/1808 , H01L31/184 , H01L51/0047 , H01L51/0059 , H01L51/0078 , H01L51/0084 , H01L51/4213 , H01L51/422 , H01L51/442 , H01L51/5048 , H01L51/56 , H01L2031/0344 , H04N5/33 , Y02E10/549
摘要： Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.

59. 发明公开

EP2372342A4 GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE 审中-公开
标题翻译： DEVICE FOR气体检测装置燃烧了好几天的外汇管制状态监测设备和仪器监测杂质的
公开(公告)号：EP2372342A4
公开(公告)日：2014-12-17
申请号：EP09834576
申请日：2009-07-30
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： INADA HIROSHI , NAGAI YOUICHI
IPC分类号： G01N21/3504 , B82Y15/00 , B82Y20/00 , G01J1/02 , G01J5/00 , G01J5/28 , G01J5/60 , G01N21/35 , G01N21/359 , H01L31/0352 , H01L31/10 , H01L31/103
CPC分类号： G01J5/602 , G01J5/0044 , G01J2005/0077 , G01N21/3504 , G01N21/359 , G01N2021/3531 , G01N2201/0833 , G01N2201/0846 , H01L31/035209 , H01L31/1035 , H01L2224/48091 , H01L2924/00014

60. 发明公开

EP2806456A1 LIGHT RECEIVING DEVICE 审中-公开
标题翻译： LICHTAUFNAHMEVORRICHTUNG
公开(公告)号：EP2806456A1
公开(公告)日：2014-11-26
申请号：EP13768201.9
申请日：2013-03-28
申请人： Asahi Kasei Microdevices Corporation
发明人： CAMARGO, Edson Gomes
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10
CPC分类号： G01J5/0025 , G01B11/14 , G01J5/10 , G01S3/781 , G01S3/783 , H01L27/1446 , H01L31/02005 , H01L31/02024 , H01L31/022408 , H01L31/105
摘要： The present invention aims to provide a light receiving device which can calculate difference values of outputs from light receiving parts at the same time with a high S/N ratio while suppressing the number of output terminals without using switching elements. The light receiving device of the present invention includes a circuit pattern including first and second light receiving parts and first and second output terminals, which are formed on the same substrate, each of the first and second light receiving parts having a semiconductor layered part forming a photodiode structure having a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and a first electrode and a second electrode respectively connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first electrodes of the first and second light receiving parts are connected to each other, the second electrode of the first light receiving part is connected to the first output terminal, the second electrode of the second light receiving part is connected to the second output terminal, and a difference between signals generated in the first light receiving part and the second light receiving part is output between the first and second output terminals.
摘要翻译：本发明的目的在于提供一种光接收装置，其可以在不使用开关元件的同时抑制输出端子的数量，同时以高S / N比同时计算光接收部分的输出的差值。本发明的光接收装置包括形成在同一衬底上的第一和第二光接收部分和第一和第二输出端的电路图案，第一和第二光接收部分中的每一个具有半导体层叠部分，具有第一导电类型半导体层和第二导电类型半导体层的光电二极管结构以及分别连接到第一导电类型半导体层和第二导电类型半导体层的第一电极和第二电极，其中第一和第二导电类型半导体层的第一电极第二光接收部彼此连接，第一光接收部的第二电极连接到第一输出端，第二光接收部的第二电极连接到第二输出端，并且产生信号之间的差在第一光接收部分和第二光束中在第一和第二输出端之间输出接收部分。

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