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51. 发明公开

EP3823039A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP3823039A1
公开(公告)日：2021-05-19
申请号：EP19834993.8
申请日：2019-07-11
申请人： Flosfia Inc.
发明人： SUGIMOTO Masahiro , TAKAHASHI Isao , SHINOHE Takashi
IPC分类号： H01L29/786 , H01L21/336 , H01L21/338 , H01L21/365 , H01L21/368 , H01L29/12 , H01L29/24 , H01L29/47 , H01L29/78 , H01L29/812 , H01L29/872
摘要： A semiconductor device including at least an inversion channel region includes an oxide semiconductor film containing a crystal that contains at least gallium oxide at the inversion channel region.

52. 发明授权

EP3016149B1 METHOD OF MANUFACTURING AN AGGLOMERATED PRECURSOR FOR MANUFACTURING A LIGHT ABSORPTION LAYER 有权
公开(公告)号：EP3016149B1
公开(公告)日：2021-04-14
申请号：EP14831806.6
申请日：2014-08-01
发明人： YOON, Seokhee , YOON, Seokhyun , YOON, Taehun
IPC分类号： H01L21/368 , H01L31/032 , H01L31/0392

53. 发明公开

EP3480841A1 p-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME 有权转让
公开(公告)号：EP3480841A1
公开(公告)日：2019-05-08
申请号：EP17820363.4
申请日：2017-06-30
申请人： Flosfia Inc. , Kyoto University
发明人： FUJITA Shizuo , KANEKO Kentaro , HITORA Toshimi , TANIKAWA Tomochika
IPC分类号： H01L21/365 , H01L21/336 , H01L21/337 , H01L21/338 , H01L21/368 , H01L29/06 , H01L29/12 , H01L29/24 , H01L29/47 , H01L29/739 , H01L29/778 , H01L29/78 , H01L29/808 , H01L29/812 , H01L29/872 , H01L33/02 , H02M3/28
摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

54. 发明公开

EP3480840A1 OXIDE SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME 审中-公开
公开(公告)号：EP3480840A1
公开(公告)日：2019-05-08
申请号：EP17820362.6
申请日：2017-06-30
申请人： Flosfia Inc.
发明人： TANIKAWA Tomochika , HITORA Toshimi
IPC分类号： H01L21/365 , C01G55/00 , H01L21/336 , H01L21/337 , H01L21/338 , H01L21/368 , H01L29/06 , H01L29/12 , H01L29/24 , H01L29/739 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/808 , H01L29/812 , H01L29/872 , H01L33/02
摘要： A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.

55. 发明公开

EP3460831A1 GROUP 13 SELENIDE NANOPARTICLES 审中-公开
公开(公告)号：EP3460831A1
公开(公告)日：2019-03-27
申请号：EP18201846.5
申请日：2013-07-05
申请人： Nanoco Technologies, Ltd.
发明人： GRESTY, Nathalie , MASALA, Ombretta , NEWMAN, Christopher , WHITELEGG, Stephen , PICKETT, Nigel
IPC分类号： H01L21/368 , H01L21/02 , C09D11/52 , C01B19/00 , H01L31/032 , H01L31/0352
摘要： A method of preparing Group 13 selenide nanoparticles comprises reacting a Group 13 ion source with a selenol compound. The nanoparticles have an M x Se y semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.

56. 发明公开

EP3413338A1 ORGANIC SEMICONDUCTOR FILM PRODUCTION DEVICE 有权转让
公开(公告)号：EP3413338A1
公开(公告)日：2018-12-12
申请号：EP17747154.7
申请日：2017-01-11
申请人： Fujifilm Corporation , THE UNIVERSITY OF TOKYO
发明人： NAKAMURA Seigo , MAEHARA Yoshiki , ITAI Yuichiro , USAMI Yoshihisa , TAKEYA Junichi
IPC分类号： H01L21/368 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
CPC分类号： B05C11/045 , H01L29/786 , H01L51/0003 , H01L51/05 , H01L51/0512 , H01L51/105
摘要： There is provided a manufacturing device of an organic semiconductor film for manufacturing an organic semiconductor film by using an organic semiconductor solution. The manufacturing device includes a coating member that is disposed to face a surface of a substrate to be spaced therefrom for forming the organic semiconductor film and forms a liquid reservoir of the organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the organic semiconductor solution to a portion between the substrate and the coating member; and a cover portion that covers at least a crystal growth portion of the organic semiconductor solution. The cover portion includes a guide to which an evaporated solvent of the organic semiconductor solution is deposited and which guides a deposit formed of the evaporated solvent of the organic semiconductor solution to a film-unformed region of the organic semiconductor film. While the organic semiconductor solution is supplied to a portion between the coating member and the surface of the substrate by the supply portion, the coating member is moved in a first direction parallel to the surface of the substrate in a state of being in contact with the organic semiconductor solution, to form the organic semiconductor film with the crystal growth portion as a starting point.

57. 发明公开

EP3236488A1 OXIDE PRECURSOR, OXIDE LAYER, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, METHOD FOR PRODUCING OXIDE LAYER, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：氧化物前体，氧化物层，半导体元件，电子器件，氧化物层的制造方法以及半导体元件的制造方法
公开(公告)号：EP3236488A1
公开(公告)日：2017-10-25
申请号：EP15869631.0
申请日：2015-10-05
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： SHIMODA, Tatsuya , NISHIOKA, Kiyoshi , FUJIMOTO, Nobutaka , SUZUKI, Masahiro , INOUE, Satoshi , FUKADA, Kazuhiro
IPC分类号： H01L21/368 , C23C18/12 , H01L21/288 , H01L21/316 , H01L21/336 , H01L29/786
CPC分类号： C23C18/1216 , C23C18/12 , C23C18/1279 , H01L21/02244 , H01L21/02255 , H01L21/02565 , H01L21/02628 , H01L21/288 , H01L29/786
摘要： An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.
摘要翻译：当通过印刷方法形成可用于电子器件或半导体元件的薄膜时，提供能够控制拉丝性的脂肪族聚碳酸酯，氧化物前体和氧化物层。在本发明的氧化物前体中，将要氧化成金属氧化物的金属化合物分散在含有由脂肪族聚碳酸酯和分子量为6000的脂肪族聚碳酸酯构成的粘合剂（可能包含不可避免的杂质）的溶液中，全部脂肪族聚碳酸酯为80质量％以上且40万以下。

58. 发明公开

EP3220434A1 ORGANIC SEMICONDUCTOR ELEMENT AND COMPOUND 审中-公开
标题翻译：有机半导体元件和复合物
公开(公告)号：EP3220434A1
公开(公告)日：2017-09-20
申请号：EP15859277.4
申请日：2015-11-05
申请人： Fujifilm Corporation
发明人： KITAMURA Tetsu
IPC分类号： H01L51/30 , C08G61/12 , C08L65/00 , C08L101/00 , H01L21/28 , H01L21/368 , H01L29/786 , H01L51/05
CPC分类号： C08G61/123 , C08G61/12 , C08G61/124 , C08G61/125 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/3221 , C08G2261/3223 , C08G2261/3225 , C08G2261/3243 , C08G2261/3327 , C08G2261/344 , C08G2261/414 , C08G2261/51 , C08G2261/592 , C08G2261/92 , C08L65/00 , C08L101/00 , C08L2205/02 , H01L21/28 , H01L29/786 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/052 , H01L51/0529 , H01L51/0558 , C09D165/00 , C08L25/16
摘要： An object of the invention is to provide an organic semiconductor element in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed, and a manufacturing method thereof, to provide a novel compound that is suitable as an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.
The organic semiconductor element according to the invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 or 2 below.
摘要翻译：本发明的目的在于提供一种有机半导体元件及其制造方法，其中，迁移率高，耐热性优异，迁移率的偏差得到抑制，从而提供适合作为有机半导体的新型化合物，以及提供迁移率高，耐热性优异，迁移率的偏差得到抑制的有机半导体膜以及用于形成可以适当地形成有机半导体膜的有机半导体膜的组合物。根据本发明的有机半导体元件具有含有具有由下式1或2表示的结构重复单元的化合物的有机半导体层。

59. 发明公开

EP3193383A4 COMPOSITION FOR FORMING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME, AND ORGANIC SEMICONDUCTOR COMPOUND 有权转让
标题翻译： ZUSAMMENSETZUNG ZUR HERSTELLUNG EINER ORGANISCHEN HALBLEITERFOLIE，ORGANISCHE HALBLEITERFOLIE UND VERFAHREN ZUR HERSTELLUNG DAVON SOWIE ORGANISCHE HALBLEITERVERBINDUNG
公开(公告)号：EP3193383A4
公开(公告)日：2017-08-30
申请号：EP15837910
申请日：2015-08-26
申请人： FUJIFILM CORP
发明人： KITAMURA TETSU , KOYANAGI MASASHI , SHIGENOI YUTA
IPC分类号： H01L51/30 , C07C43/162 , C07D307/77 , C07D333/18 , C07D493/06 , C07D495/04 , C07D495/14 , C07D495/22 , C09D5/24 , C09D165/00 , H01B1/12 , H01B1/20 , H01L21/368 , H01L29/786 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0074 , C07C43/162 , C07D307/77 , C07D333/18 , C07D493/06 , C07D495/04 , C07D495/14 , C07D495/22 , C07F7/00 , C08G2261/124 , C08G2261/1412 , C08G2261/3162 , C08G2261/3246 , C08G2261/344 , C08G2261/512 , C08G2261/92 , C08K5/01 , C08K5/45 , C09D5/24 , C09D11/106 , C09D11/36 , C09D11/52 , C09D165/00 , H01B1/12 , H01B1/20 , H01L29/786 , H01L51/0003 , H01L51/0004 , H01L51/0005 , H01L51/0054 , H01L51/0055 , H01L51/0068 , H01L51/0073 , H01L51/0094 , H01L51/0545 , H01L51/0558 , H01L51/0566 , C08L65/00
摘要： Objects of the present invention are to provide a composition for forming an organic semiconductor film that has excellent preservation stability and makes the obtained organic semiconductor element exhibit excellent driving stability in the atmosphere, to provide an organic semiconductor film using the composition for forming an organic semiconductor film, a method for manufacturing the organic semiconductor film, an organic semiconductor element, a method for manufacturing the organic semiconductor element, and to provide a novel organic semiconductor compound. A composition for forming an organic semiconductor film of the present invention contains a specific organic semiconductor having an alkoxyalkyl group as a component A and a solvent as a component B, in which a content of a non-halogen-based solvent is equal to or greater than 50% by mass with respect to a total content of the component B, and a content of the component A is equal to or greater than 0.7% by mass and less than 15% by mass.
摘要翻译：本发明的目的在于提供保存稳定性优异，并且使得到的有机半导体元件在大气中显示优异的驱动稳定性的有机半导体膜形成用组合物，以及使用该有机半导体形成用组合物的有机半导体膜用于制造有机半导体膜的方法，有机半导体元件，用于制造有机半导体元件的方法以及提供新颖的有机半导体化合物。本发明的用于形成有机半导体膜的组合物包含具有烷氧基烷基作为成分A和作为成分B的溶剂的特定有机半导体，其中非卤素类溶剂的含量等于或大于相对于成分B的总含量为50质量％以上，成分A的含量为0.7质量％以上且小于15质量％。

60. 发明公开

EP2352172A3 Method of producing photoelectric conversion device by liquid phase deposition 审中-公开
标题翻译：通过液相沉积生产光电转换装置的方法
公开(公告)号：EP2352172A3
公开(公告)日：2017-06-07
申请号：EP11152059.9
申请日：2011-01-25
申请人： Fujifilm Corporation
发明人： Kawano, Tetsuo , Koike, Takashi
IPC分类号： H01L31/0336 , H01L31/032 , H01L31/18 , H01L31/0392 , H01L21/368 , C23C18/16 , C25D11/00 , C23C18/12
CPC分类号： H01L31/0336 , H01L31/0323 , H01L31/03923 , H01L31/03925 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A method of producing a photoelectric conversion device (1) having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode (20), a photoelectric conversion layer (30) made of a compound semiconductor layer, an n-type buffer layer (40) made of a compound semiconductor layer, and a transparent conductive layer (60), is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer (30) by immersing the substrate (10) including the photoelectric conversion layer (30) in the reaction solution (90) controlled to a temperature in the range from 20°C to 45°C; and the buffer layer (40) is deposited on the photoelectric conversion layer (30) by immersing the substrate (10) including the photoelectric conversion layer (30) subjected to the diffusion step in the reaction solution (90) controlled to a temperature in the range from 70°C to 95°C.
摘要翻译：一种制造在基板上形成的具有多层结构的光电转换装置的方法，所述多层结构包括下电极（20），由化合物半导体层制成的光电转换层（30），n型缓冲层公开了由化合物半导体层构成的层（40）和透明导电层（60）。制备反应溶液，其是含有n型掺杂元素，氨和铵盐中的至少一种以及硫脲的水溶液，通过浸渍将n型掺杂剂扩散到光电转换层（30）中在反应溶液（90）中包括光电转换层（30）的基板（10）被控制在20℃至45℃范围内的温度; 并且通过将经受扩散步骤的包括光电转换层（30）的基板（10）浸入反应溶液（90）中并将温度控制在所述反应溶液（90）中的温度，从而在光电转换层（30）上沉积缓冲层（40）范围从70°C到95°C。

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