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51. 发明公开

EP2280096A4 METAL MATERIAL WITH A BISMUTH FILM ATTACHED AND METHOD FOR PRODUCING SAME, SURFACE TREATMENT LIQUID USED IN SAID METHOD, AND CATIONIC ELECTRODEPOSITION COATED METAL MATERIAL AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：金属材料FACT连接WISMUT膜及其制造方法，此方法中使用的表面处理液，并通过阳离子电矿床的涂装金属材料及其制造方法
公开(公告)号：EP2280096A4
公开(公告)日：2013-11-06
申请号：EP09754596
申请日：2009-05-20
申请人： NIHON PARKERIZING
发明人： KAWAGOSHI RYOSUKE , ISHII HITOSHI
IPC分类号： C25D13/20 , C09D5/44 , C23C18/16 , C23C18/54 , C23C22/50 , C23C22/53 , C23C22/56 , C23C22/83
CPC分类号： C23C30/005 , C23C18/1637 , C23C18/54 , C23C22/50 , C23C22/53 , C23C22/56 , C23C22/83 , C25D13/20 , Y10T428/12389 , Y10T428/12681 , Y10T428/13
摘要： This invention provides a metal material with a bismuth coating being enables the subsequent coating to be accomplished at a high throwing power, and has excellent corrosion resistance, coating adhesion, and, being able to be produced with reduced damage to the environment, the metal material having a surface and a bismuth-containing layer deposited on at least a part of the surface of the metal material, wherein a percentage of bismuth atoms in number of atoms in the surface layer of the metal material with a bismuth coating is at least 10%.

52. 发明公开

EP2627798A1 PROCESS FOR ELECTROLESS DEPOSITION OF METALS USING HIGHLY ALKALINE PLATING BATH 审中-公开
标题翻译： METHOD FOR金属的功率沉积使用强碱性电镀浴
公开(公告)号：EP2627798A1
公开(公告)日：2013-08-21
申请号：EP11831881.5
申请日：2011-10-12
申请人： University of Windsor
发明人： SCHLESINGER, Mordechay , PETRO, Robert Andrew
IPC分类号： C23C18/38 , C23C18/24 , C23C18/32
CPC分类号： C23C18/54 , C23C18/1637 , C23C18/1639 , C23C18/1658 , C23C18/166 , C23C18/1806 , C23C18/1827 , C23C18/1855 , C23C18/1872 , C23C18/31 , C23C18/32 , C23C18/38
摘要： A plating process using an electroless plating bath formed from two separate prepared component solutions. The component solutions mixed within 120 hours prior to plating operations, to provide a highly alkaline plating bath solution. One component solution of the two-part plating bath, is provided with a metal salt or source of plating ions, and which is initially kept in a separate solution from the second other prepared component solution. The second component solution contains formaldehyde, and preferably paraformaldehyde, used to reduce the metal salts into the metal to be deposited on a substrate. Each component solution further includes sodium hydroxide in concentrations selected so that when the two solutions are preferably mixed the final plating bath solution has a pH greater than 11.5.

53. 发明授权

EP2309025B1 PLATED OBJECT WITH COPPER THIN FILM FORMED BY ELECTROLESS PLATING 有权转让
标题翻译：与以自由ELECTRIC电镀形铜薄膜镀OBJECT
公开(公告)号：EP2309025B1
公开(公告)日：2012-09-26
申请号：EP09804845.7
申请日：2009-07-13
申请人： JX Nippon Mining & Metals Corporation
发明人： ITO, Junichi , YABE, Atsushi , SEKIGUCHI, Junnosuke , IMORI, Toru , YAMAKOSHI, Yasuhiro , SENDA, Shinichiro
IPC分类号： C23C18/38 , C23C28/02 , H01L21/768 , C23C18/16 , C23C18/18 , C23C18/54 , H01L21/288
CPC分类号： C23C18/54 , C23C18/1637 , C23C18/165 , C25D3/38 , H01L21/288 , H01L21/76843 , H01L21/76873 , H01L21/76874 , Y10T428/12431 , Y10T428/12438 , Y10T428/12493 , Y10T428/12569 , Y10T428/12826 , Y10T428/1284 , Y10T428/12854 , Y10T428/12903

54. 发明公开

EP2239765A4 SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权转让
标题翻译：衬底及其制造方法
公开(公告)号：EP2239765A4
公开(公告)日：2012-07-18
申请号：EP08861445
申请日：2008-11-26
申请人： NIPPON MINING CO
发明人： ITO JUNICHI , YABE ATSUSHI , SEKIGUCHI JUNNOSUKE , IMORI TORU
IPC分类号： H01L21/768 , C23C18/16 , C23C18/18 , C23C18/40 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L23/532
CPC分类号： H01L21/2855 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , H01L21/288 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00

55. 发明公开

EP2224472A1 SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权转让
标题翻译：基板和制造该基板的方法
公开(公告)号：EP2224472A1
公开(公告)日：2010-09-01
申请号：EP08861759.2
申请日：2008-11-26
申请人： Nippon Mining & Metals Co., Ltd.
发明人： ITO, Junichi , YABE, Atsushi , SEKIGUCHI, Junnosuke , IMORI, Toru
IPC分类号： H01L21/3205 , C23C18/16 , C23C18/18 , C23C18/40 , H01L21/28 , H01L21/285 , H01L21/288 , H01L23/52
CPC分类号： H01L21/288 , C23C14/0036 , C23C14/165 , C23C18/1601 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , C23C18/54 , H01L21/2855 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent.
A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
摘要翻译：本发明的一个目的是提供一种具有用于防止铜扩散的阻挡膜同时具有阻挡功能和催化功能的基板，其中高温加热期间的阻挡性能优异。一种基材，其在基材上具有防止铜扩散的阻挡膜，该阻挡膜包含选自钨，钼和铌中的一种或多种金属元素，在无电镀中具有催化功能的金属元素如铂，金，银和钯，以及选自钨，钼和铌中的前述一种或多种金属元素的氮化物形式的氮。所述用于防止铜扩散的阻挡膜通过使用包含选自钨，钼和铌中的一种或多种金属元素的靶材和前述在无电镀中具有催化功能的金属元素在氮气氛中溅射来制造。

56. 发明公开

EP1260607A3 Plating method 审中-公开
标题翻译： Plattierungsverfahren
公开(公告)号：EP1260607A3
公开(公告)日：2004-04-21
申请号：EP02253442.4
申请日：2002-05-15
申请人： Shipley Company LLC
发明人： Rzeznik, Maria Anna , Jacques, David L.
IPC分类号： C23C18/18 , C23C18/42 , H05K3/24
CPC分类号： H05K3/244 , C23C18/1637 , C23C18/1834 , C23C18/42 , C23C18/54
摘要： The present invention discloses compositions for increasing the adhesion of a layer of silver deposited from an immersion plating bath as well as methods of increasing the adhesion of silver layers obtained using these compositions. Such compositions and methods are particularly useful in the manufacture of electronic devices.
摘要翻译：本发明公开了用于增加浸渍镀浴中沉积的银层的粘附性的组合物，以及增加使用这些组合物获得的银层的粘附性的方法。这样的组合物和方法在电子设备的制造中特别有用。

58. 发明公开

EP0753896A3 Process involving metal hydrides 失效
标题翻译：涉及金属氢化物的工艺
公开(公告)号：EP0753896A3
公开(公告)日：1997-03-12
申请号：EP96305143.8
申请日：1996-07-12
申请人： AT&T IPM Corp.
发明人： Hon Law, Henry , Vyas, Brijesh
IPC分类号： H01M4/24 , H01M4/38 , C25D11/00
CPC分类号： C23C18/1637 , C23C18/54 , H01M4/0438 , H01M4/044 , H01M4/242 , H01M4/383 , H01M4/385
摘要： Metal hydrides are activated by an electrochemical procedure. In this procedure, a bulk sample of the corresponding metal is immersed in an aqueous electrolyte and contacted by a cathode, Current passed through the aqueous electrolyte causes electrolysis of the water and a concomitant reaction with the formation of metal hydride. As a result, the metal hydride is fractured and smaller particles result. Additionally, the resulting metal hydride has a substantial amount of absorbed hydrogen. A novel plating method, taking advantage of the reducing power of hydrogen absorbed in a metal hydride, is useful to encapsulate such metal hydride with a variety of metals. Therefore, such hydrides are uniformly coated by using plating solutions without the standard reducing agent and stabilizer.
摘要翻译：金属氢化物通过电化学过程被激活。在该程序中，将相应金属的大块样品浸入含水电解质中并与阴极接触，流过含水电解质的电流引起水的电解和伴随的形成金属氢化物的反应。结果，金属氢化物断裂并产生较小的颗粒。另外，所得到的金属氢化物具有大量吸收的氢。利用金属氢化物中吸收的氢的还原能力的新型电镀方法对于用各种金属包封这种金属氢化物是有用的。因此，这些氢化物通过使用没有标准还原剂和稳定剂的电镀溶液均匀涂覆。

59. 发明公开

EP0592938A1 Verfahren zur Montage und Kontaktierung von elektronischen Bauelementen auf einem isolierenden Träger 失效
标题翻译：一种用于安装和在绝缘支撑电子元件的接合工序。
公开(公告)号：EP0592938A1
公开(公告)日：1994-04-20
申请号：EP93116201.0
申请日：1993-10-07
申请人： AMEG Additive Metallisierung- Eentwicklungs und Anwendungsgesellschaft mbH
发明人： Deissner, Erich, Dipl.-Phys. , de la Mothe Hood Hammond, Jonathan, Dipl.-Ing. , Meier, Dieter, Dr. Dipl.-Chem.
IPC分类号： H05K3/32 , H01L21/60 , H01L21/48
CPC分类号： H05K3/32 , C23C18/1603 , C23C18/1637 , C23C18/1641 , C23C18/28 , C23C18/31 , H01L23/5384 , H01L24/81 , H01L2224/13111 , H01L2224/13144 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H05K3/246 , H05K2201/10636 , H05K2203/0709 , H05K2203/1461 , Y02P70/611 , Y10T29/49126 , Y10T156/1092 , H01L2924/00
摘要： Bei einem Verfahren zur Montage und Kontaktierung von mit Metallanschlüssen (11) versehenen elektrischen und/oder elektronischen Bauelementen (3) auf einem isolierenden, mit Leiterbahnen zu versehenden Träger (1) ist zur Erhöhung der Wirtschaftlichkeit vorgesehen, daß auf den Träger (1) zunächst im Bereich der Leiterbahnstruktur ein Katalysator (7) für eine stromlose Metallabscheidung aufgetragen wird, daß die Bauelemente (2) mit ihren Metallanschlüssen (11) an den zugeordneten Leiterbahnstellen des Trägers (1) positioniert werden und daß anschließend durch stromlose Metallabscheidung aus einem chemischen Metallisierungsbad die Kontaktierung (13, 14) der Metallanschlüsse (11) gleichzeitig mit der Ausbildung der metallischen Leiterbahnen (5) vorgenommen wird.
摘要翻译：在过程的用于安装和使接触上设置，其与金属连接（11）到绝缘载体（1）所有要被提供有导体轨道，它是电气和/或电子元件（3）的情况下为了提高经济提供没有催化剂（7），用于非电金属沉积最初施加到载体（1）在导体轨道结构的区域中，DASS模具部件（2）被定位为它们的金属连接件（11 ）在所述载体（1），并且，随后，接触（13,14）与在相同的时间将金属连接（11）制成并与金属导体条迹（5）形成在相关联的导体轨迹点，由从化学浴的金属化非电金属沉积。

60. 发明授权

EP0337658B1 Selective plating by laser ablation 失效
标题翻译：选择性电镀通过烧蚀通过激光。
公开(公告)号：EP0337658B1
公开(公告)日：1993-11-24
申请号：EP89303386.0
申请日：1989-04-06
申请人： THE WHITAKER CORPORATION
发明人： Wu, Jeff Cherng-Chou , Williams, Richard Taylor , Rowlette, John Robert , Brooks, Charles Parsons , Zimmerman, Richard Henry
IPC分类号： C25D5/02 , C25D5/34 , C23C18/16
CPC分类号： C25D5/34 , C23C18/1605 , C23C18/1608 , C23C18/1612 , C23C18/1637 , C23C18/182 , C23C18/54 , C25D5/022 , C25D5/024 , H05K3/0032 , H05K3/243 , H05K2201/10924 , Y10S430/146

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