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51. 发明公开

EP2679540A1 Method of manufacturing a graphene monolayer on insulating substrates 审中-公开
标题翻译： Verfahren zur Herstellung einer Grapheneinzelschicht auf Isolationssubstraten
公开(公告)号：EP2679540A1
公开(公告)日：2014-01-01
申请号：EP12174322.3
申请日：2012-06-29
申请人： Graphenea, S.A.
发明人： Zurutuza Elorza, Amaia , Centeno Perez, Alba , Alonso Rodriguez, Beatriz , Pesquera Rodriguez,, Amaia
IPC分类号： C01B31/04
CPC分类号： C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/02 , Y10T428/31786
摘要： A method of manufacturing a graphene monolayer on insulating substrates from CVD graphene synthesis, wherein a metal foil (3) catalyst with a top graphene layer (1) and a bottom graphene layer (2) is obtained, by comprising the steps of:
- Applying an adhesive tape (4) to the bottom graphene layer (2) deposited at the bottom of the metal foil (3) in the CVD graphene synthesis by a roller,
- detaching the adhesive tape (4) and the bottom graphene layer (2) from the copper foil (3) via the application of heat, from 1°C up to 5°C higher than the release temperature of the adhesive tape (4) so that the adhesive layer (4) with the bottom graphene layer (2) can be removed, obtaining a metal foil (3) with a top graphene layer (2) sample, and
- transfer the top graphene layer (1) onto a substrate (6) via a sacrificial protective layer (5).
摘要翻译：一种通过CVD石墨烯合成在绝缘基板上制造石墨烯单层的方法，其中通过以下步骤获得具有顶部石墨烯层（1）和底部石墨烯层（2）的金属箔（3）催化剂： - 应用通过辊在CVD石墨烯合成中沉积在金属箔（3）的底部的底部石墨烯层（2）的粘合带（4）， - 分离粘合带（4）和底部石墨烯层（2）通过施加热量从铜箔（3）上升到高于粘合带（4）的释放温度的1℃至5℃，使得具有底部石墨烯层（2）的粘合剂层（4）可以去除，获得具有顶部石墨烯层（2）样品的金属箔（3），以及 - 经由牺牲保护层（5）将顶部石墨烯层（1）转移到基底（6）上。

52. 发明公开

EP2365936A1 CRYSTALLINE SURFACE STRUCTURES AND METHODS FOR THEIR FABRICATION 审中-公开
标题翻译：结晶表面结构及其制造方法
公开(公告)号：EP2365936A1
公开(公告)日：2011-09-21
申请号：EP09827235.4
申请日：2009-11-19
申请人： Canatu Oy
发明人： BROWN, David P. , VON PFALER, Jan
IPC分类号： B82B3/00 , C23C8/00 , C01B31/02
CPC分类号： C23C8/22 , B82Y30/00 , B82Y40/00 , C01B31/0453 , C01B32/186 , C01B2204/02 , C01B2204/04 , C01B2204/06 , C23C8/00 , C23C8/02 , C23C8/08 , C23C8/40 , C23C8/80 , H01L21/02439 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02612 , H01L21/02658
摘要： A method for fabricating crystalline surface structures (4) on a template (1). The method comprises the steps of providing a template (1) into a reaction environment, wherein one or more elements (3) required for the formation of the crystalline surface structure (4) are contained within the template (1); heating the template (1) inside the reaction environment to increase the mobility of the element (3) within the template (1), and to increase the surface diffusion length of the element (3) on the template-environment interface; and activating the template (1) by altering the conditions within the reaction environment, to make the mobile element (3) slowly migrate towards the template-environment interface and to make the element (3) organize on the surface of the template (1) as a crystalline structure (4).

53. 发明公开

EP2197676A1 GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME 有权转让
标题翻译： GRAPH层及其制造方法
公开(公告)号：EP2197676A1
公开(公告)日：2010-06-23
申请号：EP08793065.7
申请日：2008-08-06
申请人： Samsung Electronics Co., Ltd.
发明人： CHOI, Jae-Young , SHIN, Hyeon-Jin , YOON, Seon-Mi
IPC分类号： B32B37/15
CPC分类号： C01B32/20 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B2204/02 , C01B2204/04 , C01B2204/32 , Y10T428/24967 , Y10T428/26 , Y10T428/30
摘要： Provided are a graphene sheet and a process of preparing the same. Particularly, a process of economically preparing a large-area graphene sheet having a desired thickness and a graphene sheet prepared by the process are provided.

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