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51. 发明公开

EP2586883A1 ELECTRICAL CONTACT MATERIAL 有权
标题翻译：电接触材料
公开(公告)号：EP2586883A1
公开(公告)日：2013-05-01
申请号：EP11797993.0
申请日：2011-06-09
申请人： A.L.M.T. Corp.
发明人： HATAKEYAMA, Takashi , UENISHI, Noboru , GOMA, Norihito , SUZUKI, Yasuhiko
IPC分类号： C22C32/00 , C22C5/06 , C22C29/08 , H01H1/021 , H01H1/023 , C22C1/05
CPC分类号： C22C5/06 , B22F2998/00 , C22C29/08 , C22C32/0052 , H01H1/0233 , B22F2303/01 , B22F2301/255
摘要： Provided is an electrical contact material excellent in welding resistance, wear-out resistance, and temperature performance. The electrical contact material (31) includes more than 30% by mass and 55% by mass or less of tungsten carbide and 2% by mass or more and 5% by mass or less of graphite, the remainder including silver and an unavoidable impurity, the electrical contact material (31): having a relative density of 98.0% or more; an oxygen content of 450 ppm or less; an electrical conductivity of 45% IACS or more; and a transverse rupture strength of 350 MPa or more.
摘要翻译：本发明提供耐焊接性，耐磨耗性和温度性能优异的电触点材料。电触点材料（31）含有超过30质量％且55质量％以下的碳化钨和2质量％以上且5质量％以下的石墨，余量包括银和不可避免的杂质，电接触材料（31）：具有98.0％或更高的相对密度; 氧含量为450ppm或更少; 45％IACS或更高的电导率; 横向断裂强度为350MPa以上。

53. 发明授权

EP2277660B1 ELECTRODEPOSITED WIRE TOOL AND METHOD OF PRODUCING SAME 有权
标题翻译：电镀线器及其制造方法
公开(公告)号：EP2277660B1
公开(公告)日：2012-12-05
申请号：EP09731004.9
申请日：2009-04-08
申请人： A.L.M.T. Corp.
发明人： KAZAHAYA, Katsuo , MATSUMOTO, Yasushi , FUKUNISHI, Toshio , TSUJIMOTO, Munehiro , OGAWA, Hideki , YAMANAKA, Masaaki , FUKUSHIMA, Kenji
IPC分类号： B24B27/06 , B23Q3/06 , B24D3/06 , B24D11/00 , H01L21/304
CPC分类号： B24D18/0018 , B23D61/185 , B23D65/00 , B24D11/00

54. 发明公开

EP2413337A1 ELECTRICAL CONTACT MATERIAL 审中-公开
标题翻译： ELEKTRISCHES KONTAKTMATERIAL
公开(公告)号：EP2413337A1
公开(公告)日：2012-02-01
申请号：EP10755584.9
申请日：2010-03-03
申请人： A.L.M.T. Corp.
发明人： HATAKEYAMA, Takashi , UENISHI, Noboru , SUZUKI, Yasuhiko , GOMA, Norihito
IPC分类号： H01H1/023 , C22C1/05 , C22C1/10 , C22C5/06 , C22C32/00
CPC分类号： H01H1/023 , C22C1/05 , C22C1/10 , C22C5/06 , H01H1/0233 , H01H1/027
摘要： Provided are an electrical contact material capable of reducing wear-out rates after breaking tests in an overload test and a short-circuit test of a breaker or the like; and an electrical contact material capable of preventing welding after breaking tests in a short-circuit test of a breaker or the like. The electrical contact material (31) according to one aspect includes 4% by mass or more and 7% by mass or less of graphite, the remainder is composed of silver and an unavoidable impurity, a deflection thereof is greater than or equal to 0.5 mm, a Vickers hardness thereof is greater than or equal to 55, and an oxygen content therein is less than or equal to 100 ppm. It is preferable that the electrical contact material (31) further includes a tungsten carbide. It is preferable that an average particle diameter of the tungsten carbide is greater than or equal to 40 nm and less than or equal to 3 µm and a content of the tungsten carbide is greater than or equal to 2% by mass and less than or equal to 4% by mass. The electrical contact material (31) according to another aspect includes 0.5% by mass or more and 2% by mass or less of graphite, the remainder is composed of silver and an unavoidable impurity, a deflection thereof is greater than or equal to 0.8 mm, a Vickers hardness thereof is greater than or equal to 40, and an oxygen content therein is less than or equal to 100 ppm.
摘要翻译：提供了能够在过载测试中断裂测试和断路器等的短路测试之后降低磨损率的电接触材料; 以及能够防止断路器等的短路试验中的断裂试验后的焊接的电接触材料。根据一个方面的电接触材料（31）包括4质量％以上且7质量％以下的石墨，余量由银和不可避免的杂质构成，其偏转量大于或等于0.5mm 维氏硬度大于或等于55，其中的氧含量小于或等于100ppm。优选的是，电接触材料（31）还包括碳化钨。碳化钨的平均粒径优选为40nm以上且3μm以下，碳化钨的含量优选为2质量％以下且小于等于至4质量％。根据另一方面的电接触材料（31）包括0.5质量％以上且2质量％以下的石墨，其余为银和不可避免的杂质，其偏转量大于或等于0.8mm 维氏硬度大于或等于40，其中的氧含量小于或等于100ppm。

55. 发明公开

EP1850380A3 Heat sink substrate and production method for the same 有权
标题翻译：散热器基板和其制造方法
公开(公告)号：EP1850380A3
公开(公告)日：2010-10-06
申请号：EP07251738.6
申请日：2007-04-25
申请人： A.L.M.T. CORP.
发明人： Omachi, Masahiro , Fukui, Akira , Ikeda, Toshiya
IPC分类号： H01L23/373
CPC分类号： H01L23/3731 , H01L23/3733 , H01L23/3738 , H01L2924/0002 , Y10T428/24926 , Y10T428/249953 , Y10T428/249956 , Y10T428/249957 , H01L2924/00
摘要： A heat sink substrate has a composite structure including a three-dimensional network structure of SiC ceramic having pores infiltrated with Si, and has a thermal conductivity of not less than 150 W/m·K and an oxygen content of not greater than 7 ppm. The heat sink substrate is easily allowed to have an increased surface area. Further, the heat sink substrate has a higher thermal conductivity and a coefficient thermal expansion close to that of the SiC. Therefore, the heat sink substrate is superior in the efficiency of heat conduction from a semiconductor device. The heat sink substrate is produced by infiltrating a thermally melted Si into the pores of the three-dimensional network structure in a non-oxidative atmosphere in the presence of an oxygen absorber.

56. 发明公开

EP2127769A1 WIRE DRAWING DIE 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES DRAHTZIEHFORMS AUS DIAMANT
公开(公告)号：EP2127769A1
公开(公告)日：2009-12-02
申请号：EP08703471.6
申请日：2008-01-18
申请人： Sumitomo Electric Industries, Ltd. , A.L.M.T. Corp. , Sumitomo Electric Hardmetal Corp.
发明人： SUMIYA, Hitoshi , YUKAWA, Makoto
IPC分类号： B21C3/02
CPC分类号： B21C3/025 , B01J3/062 , B01J2203/061 , B01J2203/0625 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , B21C3/18 , B82Y30/00 , C04B35/52 , C04B35/645 , C04B2235/422 , C04B2235/425 , C04B2235/427 , C04B2235/656 , C04B2235/781 , C04B2235/783 , C04B2235/785 , C30B29/605
摘要： One object of the present invention is to provide a wire drawing die excellent in strength and wear resistance. The wire drawing die has a core formed using highly hard diamond polycrystalline body made substantially only of diamond and produced by directly converting a raw material composition including a non-diamond type carbon material into diamond and sintering the diamond at an ultra high pressure and an ultra high temperature without adding a sintering aid or a catalyst, the polycrystalline body having a mixed construction including fine-grained diamond crystals with a maximum grain size of less than or equal to 100 nm and an average grain size of less than or equal to 50 nm and plate-like or particulate coarse-grained diamond crystals with a minimum grain size of greater than or equal to 50 nm and a maximum grain size of less than or equal to 10000 nm.
摘要翻译：本发明的一个目的是提供一种强度和耐磨性优异的拉丝模具。拉丝模具具有使用基本上仅由金刚石制成的高硬度金刚石多晶体形成的芯体，其通过将包含非金刚石型碳材料的原料组合物直接转化为金刚石并以超高压和超高压烧结金刚石高温而不添加烧结助剂或催化剂，所述多晶体具有混合结构，其包含最大粒度小于或等于100nm的细晶粒金刚石晶体和小于或等于50nm的平均晶粒尺寸以及最小晶粒尺寸大于或等于50nm且最大晶粒尺寸小于或等于10000nm的板状或颗粒状粗粒金刚石晶体。

57. 发明公开

EP1976004A1 SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE, SEMICONDUCTOR DEVICE USING THE SAME, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE 有权
标题翻译：半导体元件搭载用基板，半导体器件及其制造方法的半导体元件安装用基板
公开(公告)号：EP1976004A1
公开(公告)日：2008-10-01
申请号：EP06843018.0
申请日：2006-12-21
申请人： A.L.M.T. CORP.
发明人： TAKASHIMA, Kouichi , MORIGAMI, Hideaki , NARITA, Masashi
IPC分类号： H01L23/36 , H01L23/14
CPC分类号： H01L24/27 , H01L23/14 , H01L23/3732 , H01L24/29 , H01L24/31 , H01L24/83 , H01L2224/2908 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/83801 , H01L2224/83805 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01S5/0213 , H01S5/02484 , H01L2924/01014 , H01L2924/00 , H01L2924/3512 , H01L2224/29144 , H01L2924/00012 , H01L2924/00014
摘要： The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10µm to 40µm and a surface-direction diametrical size of 10µm to 3mm is 50/cm 2 or less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1µm to 30µm, an arithmetic mean roughness R a of a roughness curve showing a surface roughness of R a ≤2µm, and a maximum height roughness R z of R z ≤15µm, and fills and covers the recesses or protrusions, is formed.

58. 发明公开

EP1939993A2 Heat spreader and semiconductor device using the same 有权
标题翻译： Wärmeverteilerund Halbleitervorrichtung damit
公开(公告)号：EP1939993A2
公开(公告)日：2008-07-02
申请号：EP07255042.9
申请日：2007-12-24
申请人： A.L.M.T. CORP.
发明人： Takashima, Kouichi
IPC分类号： H01S5/00
CPC分类号： H01S5/02492 , H01L23/36 , H01L2924/0002 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02469 , H01L2924/00
摘要： The present invention provides a heat spreader 1 which includes a substrate 7 composed of a metal-containing material and in which a second-component connection surface 6 of the substrate 7 is provided with wettability with a solder and a solder block layer 14 is formed in at least one of respective regions, adjacent to each other, of the second-component connection surface 6 and a side surface 13. When a semiconductor device 4 is manufactured by connecting a semiconductor laser 2 to the element connection surface 5 through an element connecting layer 8, and then connecting a heat sink 3 to the second-component connection surface 6 through a second-component connecting layer 9 having a melting point lower than that of the element connecting layer 8, the semiconductor block layer 14 can inhibit the melted solder from creeping up along the side surface 13, which can prevent defects that the solder that has crept up short-circuits the semiconductor laser 2 and blocks a luminous flux of laser light emitted from an emission surface 12 of the semiconductor laser 2.
摘要翻译：本发明提供一种散热器1，其包括由含金属材料构成的基板7，并且其中基板7的第二部件连接表面6与焊料具有润湿性，并且在其中形成焊料阻挡层14 第二部件连接表面6和侧表面13彼此相邻的相应区域中的至少一个。当通过元件连接层将半导体激光器2连接到元件连接表面5来制造半导体器件4时 8，然后通过熔点低于元件连接层8的熔点的第二部件连接层9将散热器3连接到第二部件连接表面6，半导体阻挡层14可以抑制熔化的焊料从沿着侧表面13爬行，这可以防止已经起伏的焊料短路半导体激光器2的缺陷并阻挡1a的光通量从半导体激光器2的发射表面12发射的光。

59. 发明公开

EP1850380A2 Heat sink substrate and production method for the same 有权
标题翻译： Kühlkörpersubstratund Herstellungsverfahrendafür
公开(公告)号：EP1850380A2
公开(公告)日：2007-10-31
申请号：EP07251738.6
申请日：2007-04-25
申请人： A.L.M.T. CORP.
发明人： Omachi, Masahiro , Fukui, Akira , Ikeda, Toshiya
IPC分类号： H01L23/373
CPC分类号： H01L23/3731 , H01L23/3733 , H01L23/3738 , H01L2924/0002 , Y10T428/24926 , Y10T428/249953 , Y10T428/249956 , Y10T428/249957 , H01L2924/00
摘要： A heat sink substrate has a composite structure including a three-dimensional network structure of SiC ceramic having pores infiltrated with Si, and has a thermal conductivity of not less than 150 W/m·K and an oxygen content of not greater than 7 ppm. The heat sink substrate is easily allowed to have an increased surface area. Further, the heat sink substrate has a higher thermal conductivity and a coefficient thermal expansion close to that of the SiC. Therefore, the heat sink substrate is superior in the efficiency of heat conduction from a semiconductor device. The heat sink substrate is produced by infiltrating a thermally melted Si into the pores of the three-dimensional network structure in a non-oxidative atmosphere in the presence of an oxygen absorber.
摘要翻译：散热基板具有复合结构，其包括具有Si渗入的孔的SiC陶瓷的三维网状结构，并且具有不低于150W / m·K的热导率和不大于7ppm的氧含量。容易使散热基板具有增加的表面积。此外，散热基板具有比SiC更高的热导率和系数热膨胀。因此，散热基板的半导体器件的热传导效率优异。通过在氧吸收剂的存在下，在非氧化性气氛中将热熔融的Si浸渍到三维网状结构的孔中来制造散热基板。

60. 发明公开

EP1649955A1 DIAMOND FILM COATED TOOL AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：麻醉品DIAMANTFILMÜBERZOGENESWERKZEUG UND VERFAHREN ZU DESSEN HERSTELLUNG
公开(公告)号：EP1649955A1
公开(公告)日：2006-04-26
申请号：EP03772725.2
申请日：2003-11-12
申请人： A.L.M.T. CORP. , Sumitomo Electric Industries, Ltd.
发明人： KAZAHAYA, Katsuo , KAWAI, Shigetaka , MATSUMOTO, Yasushi , ISHIBASHI, Keiji , IMAI, Takahiro
IPC分类号： B23B27/14 , B23B27/20 , B23C5/16 , B23P15/28 , C23C16/27
CPC分类号： C23C16/27 , B23G5/06 , B23G2200/26 , B23G2225/08 , B23G2225/16 , B23G2225/28 , C23C16/0218 , Y10T428/30
摘要： The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool.
A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.
摘要翻译：本发明提供一种具有优异的切割性能，耐磨性，粘合性和工作表面粗糙度的金刚石涂层工具的组合以及制造这种工具的方法。一种金刚石涂层工具，其包括形成在基底表面上的基底和金刚石涂层，其中所述基底由硬质合金或金属陶瓷制成，构成所述金刚石涂层的生长表面的金刚石晶粒的平均晶粒尺寸为约1.5 所述金刚石涂层具有约0.1微米至20微米的厚度，并且所述金刚石涂层的平均表面粗糙度Ra为约0.01微米至0.2微米。可以通过将由硬质合金或金属陶瓷组成的基材渗碳并在其上生长金刚石涂层来获得这种金刚石涂层的工具。

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