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41. 发明授权

EP2371784B1 OPTICAL MATERIAL AND PRODUCTION PROCESS FOR THE SAME 有权转让
标题翻译：光学材料及其制造方法
公开(公告)号：EP2371784B1
公开(公告)日：2018-05-16
申请号：EP09834518.4
申请日：2009-12-25
申请人： Inter-University Research Institute Corporation National Institutes of Natural Sciences , Genesis Research Institute, Incorporated
发明人： TAIRA, Takunori , AKIYAMA, Jun , ASAI, Shigeo , HARA, Kunihiko
IPC分类号： B28B1/00 , C04B35/447 , C04B35/50 , C04B35/645 , C30B29/22 , C30B29/30 , C30B30/04 , C30B28/00 , H01S3/16
CPC分类号： H01F41/0253 , B28B1/00 , B33Y40/00 , C04B35/447 , C04B35/50 , C04B35/6455 , C04B2235/3224 , C04B2235/6027 , C04B2235/605 , C04B2235/9653 , C30B28/00 , C30B29/22 , C30B29/30 , C30B30/04 , H01S3/1603 , H01S3/1611 , H01S3/1618 , H01S3/1671 , H01S3/1673 , H01S3/1685
摘要： Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1, 600-1, 900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.

42. 发明公开

EP3253909A1 FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS 有权转让
标题翻译：用于宽带隙晶体的种子升华的炉子
公开(公告)号：EP3253909A1
公开(公告)日：2017-12-13
申请号：EP16707276.8
申请日：2016-01-29
申请人： Dow Corning Corporation
发明人： LOBODA, Mark
IPC分类号： C30B23/00 , C30B29/36 , C30B30/04
CPC分类号： C30B23/06 , C30B29/36 , C30B30/00 , C30B30/04
摘要： An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.

43. 发明授权

EP2414303B1 CERAMIC, PIEZOELECTRIC DEVICE, AND PRODUCTION METHOD THEREOF 有权
标题翻译：陶瓷，压电器件及其制造方法
公开(公告)号：EP2414303B1
公开(公告)日：2016-03-30
申请号：EP10715365.2
申请日：2010-03-30
申请人： Canon Kabushiki Kaisha , University of Yamanashi
发明人： SAITO, Hiroshi , MATSUDA, Takanori , TAKASHIMA, Kenji , KUMADA, Nobuhiro
IPC分类号： B82Y30/00 , C04B35/26 , C04B35/468 , C04B35/626 , C30B28/00 , C30B29/24 , C30B30/04 , H01L41/43 , H01L41/187
CPC分类号： C30B29/24 , B82Y30/00 , C04B35/26 , C04B35/2666 , C04B35/2675 , C04B35/4682 , C04B35/6263 , C04B2235/3215 , C04B2235/3236 , C04B2235/3255 , C04B2235/3274 , C04B2235/3275 , C04B2235/3291 , C04B2235/3298 , C04B2235/5454 , C04B2235/6027 , C04B2235/605 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/77 , C04B2235/787 , C30B28/00 , C30B30/04 , H01L41/1878 , H01L41/43
摘要： To provide a piezoelectric ceramic containing BiFeO3 having a {110} plane orientation in a pseudo-cubic form, which is suited for the domain engineering, the piezoelectric ceramic includes a perovskite-type metal oxide represented by the following general formula (1), and has a {110} plane orientation in a pseudo-cubic form: xBiFeO3-(1-x)ABO3General Formula (1) where A and B each represent one kind or more of metal ions; A represents a metal ion having a valence of 1, 2 or 3; and B represents a metal ion having a valence of 3, 4, or 5, provided that x is within a range of 0.3@x@1.

44. 发明授权

EP1930484B1 PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL 有权
标题翻译：用于生产硅单晶
公开(公告)号：EP1930484B1
公开(公告)日：2014-07-23
申请号：EP06745742.4
申请日：2006-04-27
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： SAKURADA, Masahiro, c/o Shirakawa R&D Center, , FUSEGAWA, Izumi, c/o Shirakawa R&D Center,
IPC分类号： C30B29/06 , C30B15/20 , C30B15/30 , C30B30/04
CPC分类号： C30B15/305 , C30B30/04

45. 发明公开

EP1930484A4 PROCESS FOR PRODUCING SINGLE CRYSTAL 有权
标题翻译： EINKRISTALLHERSTELLUNGSVERFAHREN
公开(公告)号：EP1930484A4
公开(公告)日：2013-05-29
申请号：EP06745742
申请日：2006-04-27
申请人： SHINETSU HANDOTAI KK
发明人： SAKURADA MASAHIRO , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/20 , C30B15/30 , C30B30/04
CPC分类号： C30B15/305 , C30B30/04

46. 发明公开

EP2415910A1 Silicon single crystal production method 有权
标题翻译： Verfahren zur Herstellung eines Siliciumeinzelkristalls
公开(公告)号：EP2415910A1
公开(公告)日：2012-02-08
申请号：EP11175136.8
申请日：2011-07-25
申请人： Siltronic AG
发明人： Kyufu, Shinichi
IPC分类号： C30B29/06 , C30B15/28 , C30B15/30 , C30B30/04
CPC分类号： C30B29/06 , C30B15/28 , C30B15/305 , C30B30/04
摘要： A silicon single crystal production method according to this invention will allow for the suppression of the deformation and the dislocations as well as the successful omission of the tail section.
The silicon single crystal production method includes steps of growing the straight-body section 4 of the silicon single crystal 2 under the influence of the horizontal magnetic field with a magnetic flux density at its magnetic center L2 being equal to or more than 1000 Gauss, and equal to or less than 2000 Gauss, then reducing the relative lifting speed of the silicon single crystal to the surface of the melt 32 to 0 mm/minute, then maintaining the static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the whole growth front of the silicon single crystal will form a convex shape protruding in the opposite direction to the lifting direction of the silicon single crystal, and finally separating the silicon single crystal from the melt.
摘要翻译：根据本发明的硅单晶制造方法将允许抑制变形和位错以及成功省略尾部。硅单晶制造方法包括以下步骤：在水平磁场的影响下使硅单晶2的直体部分4生长，其磁性中心L2处的磁通密度等于或高于1000高斯，等于或小于2000高斯，然后将硅单晶相对于熔体表面32的提升速度降低到0毫米/分钟，然后保持静态直到硅单体的表观重量减小晶体，然后进一步保持静态，使得单晶的整个生长前沿将形成在与单晶的提升方向相反的方向上突出的凸形，并最终将硅单晶与熔体分离。

47. 发明授权

EP1831436B1 CONTROLLING MELT-SOLID INTERFACE SHAPE OF A GROWING SILICON CRYSTAL USING A VARIABLE MAGNETIC FIELD 有权
标题翻译：管制熔体 - 固体 - 表面上的生长硅晶体的形式使用可变磁场
公开(公告)号：EP1831436B1
公开(公告)日：2009-04-15
申请号：EP05852293.9
申请日：2005-11-29
申请人： MEMC Electronic Materials, Inc.
发明人： LU, Zheng, MEMC Electronic Materials, Inc.
IPC分类号： C30B15/30 , C30B15/22 , C30B30/04 , C30B29/06
CPC分类号： C30B29/06 , C30B15/203 , C30B15/22 , C30B15/305 , Y10S117/917 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： Methods and system for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where theingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.

48. 发明公开

EP1313150A4 METHOD FOR MANUFACTURING SOLAR CELL AND SOLAR CELL 审中-公开
标题翻译：太阳能电池和方法
公开(公告)号：EP1313150A4
公开(公告)日：2006-06-14
申请号：EP01955600
申请日：2001-08-08
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： OKI KONOMU , ABE TAKAO
IPC分类号： C01B33/06 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , H01L31/028 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/068 , H01L31/028 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single crystal wafer; a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has an interstitial oxygen concentration of 15 ppma or less; and a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has a BMD density of 5 x 10 /cm or less. Thus, there can be obtained a solar cell showing little fluctuation of characteristics.

49. 发明公开

EP1087040A1 METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND APPARATUS FOR PRODUCING THE SAME, AND SINGLE CRYSTAL AND WAFER PRODUCED WITH THE METHOD 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON SILICIUM EINKRISTALLEN
公开(公告)号：EP1087040A1
公开(公告)日：2001-03-28
申请号：EP00906720.8
申请日：2000-03-06
申请人： Shin-Etsu Handotai Co., Ltd
发明人： ITOI, Kirio, Shirakawa P., Shin-Etsu Han. Co. Ltd. , IINO, Eiichi, Isobe R & D C.Shin-Etsu Han. Co. Ltd , ISHIZUKA, T., Shirakawa P., Shin-Etsu H. Co. Ltd. , OHTA, Tomohiko, Shirakawa P., Shin-Etsu H. Co. Ltd , FUSEGAWA, I., Shirakawa P., Shin-Etsu Han. Co.,Ltd
IPC分类号： C30B15/00 , C30B29/06 , C30B30/04
CPC分类号： C30B29/06 , C30B15/305 , C30B30/04 , Y10S117/917
摘要： In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less. There are provided methods for producing a silicon single crystal based on the CZ method in which a horizontal magnetic field is applied, which can produce a silicon single crystal ingot of high uniformity of interstitial oxygen concentration along the growth direction of the grown single crystal with high productivity and high yield.
摘要翻译：在通过生长单晶锭而将垂直于晶体生长轴的磁场施加到包含在石英坩埚中的硅熔体的方法中，其中单晶从包含在石英坩埚中的熔体中拉出，进行晶体生长，使坩埚中含有的硅熔融物表面产生的低温区域和高温区域中的一个应始终覆盖晶体生长的固液界面，或垂直磁性体将在石英坩埚中所含的硅熔体的表面的晶体中心的磁场强度的场磁场分量设定为水平磁场分量为0.3以上且0.5以下。提供了基于施加水平磁场的CZ方法制造硅单晶的方法，其可以产生沿着生长单晶的生长方向具有高的间隙氧浓度的均匀性高的硅单晶锭生产率高，产量高。

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