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41. 发明授权

EP0616376B1 Wafer bonding of light emitting diode layers 失效
标题翻译：接合层与基板的发光二极管
公开(公告)号：EP0616376B1
公开(公告)日：1997-11-26
申请号：EP94100891.4
申请日：1994-01-21
申请人： Hewlett-Packard Company
发明人： Kish, Fred A. , Steranka, Frank M. , Defever, Dennis C. , Robbins, Virginia M. , Uebbing, John
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/005 , H01L33/0062 , H01L33/0079 , H01L33/0087 , H01L33/145 , H01L2924/0002 , H01L2924/00

42. 发明授权

EP0584236B1 BLUE-GREEN LASER DIODE 失效
标题翻译：蓝绿色二极管
公开(公告)号：EP0584236B1
公开(公告)日：1997-07-16
申请号：EP92912423.8
申请日：1992-05-12
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： HAASE, Michael, A. , CHENG, Hwa , DEPUYDT, James, M. , QIU, Jun
IPC分类号： H01S3/19 , H01L33/00 , H01L21/363 , H01L21/443
CPC分类号： H01L33/40 , B82Y20/00 , H01L33/0087 , H01L33/145 , H01L33/28 , H01L33/285 , H01L33/38 , H01L2924/0002 , H01S5/0421 , H01S5/2213 , H01S5/2231 , H01S5/3059 , H01S5/3068 , H01S5/327 , H01S5/3403 , H01S5/347 , H01L2924/00
摘要： A II-VI compound semiconductor laser diode (10) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding lasers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 1017 cm-3, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.

43. 发明公开

EP0727830A3 Wafer bonding of light emitting diode layers 失效
标题翻译：发光二极管层的晶片键合
公开(公告)号：EP0727830A3
公开(公告)日：1997-01-29
申请号：EP96106636.2
申请日：1994-01-21
申请人： Hewlett-Packard Company
发明人： Kish, Fred A. , Steranka, Frank M. , Defever, Dennis C. , Robbins, Virginia M. , Uebbing, John
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/005 , H01L33/0062 , H01L33/0079 , H01L33/0087 , H01L33/145 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a light emitting diode (LED) having a plurality of layers including adjacent first and second layers (126,130) joined at an interface, comprises the steps of patterning a first surface (138) of the first layer (126) such that at least one of the optical and electrical properties will selectively vary along the interface of the first and second layers (130); and wafer bonding the first surface of the first layer to the second layer.
摘要翻译：一种形成具有多个层的发光二极管（LED）的方法，所述多个层包括在界面处连接的相邻的第一和第二层（126,130），所述方法包括以下步骤：图案化第一层（126）的第一表面（138）光学和电学性质中的至少一个将沿着第一和第二层（130）的界面选择性地变化; 以及将第一层的第一表面晶片接合到第二层。

44. 发明授权

EP0535736B1 Semiconductor device 失效
公开(公告)号：EP0535736B1
公开(公告)日：1996-05-22
申请号：EP92202944.2
申请日：1992-09-25
申请人： Philips Electronics N.V.
发明人： Tijburg, Rudolf Paulus , van der Waarde, Karel Martinus
IPC分类号： H01L21/3205 , H01L29/40 , H01L33/00 , H01S3/025 , C23C14/02 , G11C5/00
CPC分类号： H01L33/40 , C23C14/02 , H01L21/32051 , H01L29/45 , H01L29/452 , H01L33/145 , H01L33/30 , H01S5/0425

45. 发明公开

EP0683930A1 BURIED-RIDGE II-VI LASER DIODE AND METHOD OF FABRICATION 失效
标题翻译： II-VI掩埋脊形波导激光器及其制造方法。
公开(公告)号：EP0683930A1
公开(公告)日：1995-11-29
申请号：EP94908678.0
申请日：1994-01-18
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： HAASE, Michael, A. , QIU, Jun , CHENG, Hwa , DePUYDT, James, M.
IPC分类号： H01S5 , H01L29 , H01L33
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/45 , H01L33/0087 , H01L33/145 , H01L33/28 , H01L33/285 , H01L33/38 , H01L2933/0016 , H01S5/0421 , H01S5/2211 , H01S5/2231 , H01S5/3059 , H01S5/3068 , H01S5/327 , H01S5/3403 , H01S5/347
摘要： A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.

46. 发明公开

EP0627799A1 Semiconductor light-emitting device with third cladding layer 失效
标题翻译： Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht。
公开(公告)号：EP0627799A1
公开(公告)日：1994-12-07
申请号：EP94303990.9
申请日：1994-06-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Sasaki, Kazuaki , Yamamoto, Osamu
IPC分类号： H01S3/19 , H01S3/085 , H01S3/25 , H01L21/20 , H01L33/00
CPC分类号： H01S5/2232 , H01L33/145 , H01S5/18352 , H01S5/2206 , H01S5/3202 , H01S5/32308 , H01S5/4031 , H01S2304/12
摘要： A semiconductor laser device includes a substrate (1) having one of p- and n-conductivity types, and a current constrictive layer (2) formed on a surface of the substrate (1) and having the other type of conductivity. The current constrictive layer (2) has a through-channel (2b) extending to the surface of the substrate (1) for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel (2b) is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate (1). A third cladding layer (8) having the one type of conductivity is filled in the through-channel (2b), a surface of the third cladding layer (8) being flush with a surface of a current constrictive layer (2). A first cladding layer (3), an active layer (4), and a second cladding layer (5) which constitute a double heterostructure are formed over the third cladding layer (8) and current constrictive layer (2).
摘要翻译：半导体激光器件包括具有p型和n型导电类型之一的衬底（1）和形成在衬底（1）的表面上并具有另一种导电性的电流限制层（2）。电流收缩层（2）具有延伸到衬底（1）的表面的通道（2b），用于在垂直于衬底表面的方向上限定电流通路。贯通通道（2b）是沿垂直于基板（1）的端面的方向延伸的带状图案。具有一种导电性的第三包覆层（8）填充在通孔（2b）中，第三包覆层（8）的表面与电流缩窄层（2）的表面齐平。在第三包层（8）和电流限制层（2）上形成构成双异质结构的第一包层（3），有源层（4）和第二覆层（5）。

47. 发明授权

EP0351868B1 Electroluminescent device of compound semiconductor 失效
标题翻译：化合物半导体的电致发光器件
公开(公告)号：EP0351868B1
公开(公告)日：1994-09-21
申请号：EP89113442.1
申请日：1989-07-21
申请人： SHARP KABUSHIKI KAISHA
发明人： Tomomura, Yoshitaka , Kitagawa, Masahiko
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , G09F13/22 , G09F2013/222 , H01L27/156 , H01L33/0037 , H01L33/285 , H01L2224/48463 , H01L2224/49107 , H01L2224/4918 , Y10S428/901 , Y10S428/917

48. 发明公开

EP0594212A1 An ohmic electrode, its fabricating method and a light emitting device 失效
标题翻译： Ohmsche电极，Verfahrenfürihre Herstellung und lichtemittierende Vorrichtung。
公开(公告)号：EP0594212A1
公开(公告)日：1994-04-27
申请号：EP93117183.9
申请日：1993-10-22
申请人： SONY CORPORATION
发明人： Ozawa, Masafumi , Ito, Satoshi , Narui, Fumiyo
IPC分类号： H01L33/00 , H01L21/443
CPC分类号： H01L33/40 , H01L21/443 , H01L31/0224 , H01L33/145 , H01L33/28 , H01S5/0421 , H01S5/327
摘要： An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer (3) made of Pd or an alloy containing Pd; and a metal layer (4, 5) provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer (3) made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer (2); and providing a metal layer (4, 5) on the layer (3) made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.
摘要翻译：公开了一种用于p型II-VI族化合物半导体的欧姆电极及其制造方法。欧姆电极包括：由Pd或含有Pd的合金制成的层（3）和设置在其上的金属层（4,5）。欧姆电极的制造方法包括以下步骤：在p型II-VI化合物半导体层（2）上提供由Pd或含有Pd的合金制成的层（3）; 并在由Pd或含有Pd的合金制成的层（3）上提供金属层（4,5）。还公开了使用欧姆电极作为p侧电极的发光器件，例如半导体激光器和发光二极管。

49. 发明公开

EP0351868A2 Electroluminescent device of compound semiconductor 失效
标题翻译： Elektrolumineszierende Anordnung von Verbindungshalbleitern。
公开(公告)号：EP0351868A2
公开(公告)日：1990-01-24
申请号：EP89113442.1
申请日：1989-07-21
申请人： SHARP KABUSHIKI KAISHA
发明人： Tomomura, Yoshitaka , Kitagawa, Masahiko
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , G09F13/22 , G09F2013/222 , H01L27/156 , H01L33/0037 , H01L33/285 , H01L2224/48463 , H01L2224/49107 , H01L2224/4918 , Y10S428/901 , Y10S428/917
摘要： The present invention provides an electro-luminescent device of Group II - VI compound semiconductor which comprises a substrate, a light emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light emitting portion the current to be produced in the device by the application of an external voltage.
摘要翻译：本发明提供了一种II-VI族化合物半导体的电致发光器件，它包括一个衬底，一个发光部分和至少设置在衬底和发光部分之间的导电部分，用于将发光部分注入到发光部分通过施加外部电压在器件中产生的电流。

50. 发明公开

EP0308082A2 Edge emitting light emission diode 失效
标题翻译： Randemittierende lichtemittierende二极管。
公开(公告)号：EP0308082A2
公开(公告)日：1989-03-22
申请号：EP88307763.8
申请日：1988-08-22
申请人： STC PLC
发明人： Butlin, Richard Stephen , Houghton, Andrew Julian Nicholas
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/145 , H01L33/38 , H01L33/40 , H01S5/0601 , H01S5/1064 , H01S5/22
摘要： An edge emitting light emissive diode for coupling light into single mode fibre has at its front end a structure (7) similar to that of a ridge laser, this structure being terminated at its rear end with a planar region (8) which is unpumped.
摘要翻译：用于将光耦合到单模光纤的边缘发射光发射二极管在其前端处具有类似于脊形激光器的结构（7），该结构在其后端处被终止于未被吸收的平面区域（8）。

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