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    • 49. 发明公开
    • FABRICATION OF NANOSTRUCTURED SUBSTRATED COMPRISING A PLURALITY OF NANOSTRUCTURE GRADIENTS ON A SINGLE SUBSTRATE
    • 具有多NANOSTRUKTURGRADIENTEN纳米结构与基体结合在一个单一基板生产
    • EP3130559A1
    • 2017-02-15
    • EP15002432.1
    • 2015-08-14
    • Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
    • Diao, ZhaoluDirks, Jan-HenningSpatz, Joachim P.
    • B81C1/00B82Y10/00B82Y40/00G02B1/118H01L21/3065H01L21/308
    • B81C1/00031B81B2203/0361B82Y10/00B82Y40/00G02B1/118G02B2207/101H01L31/00
    • The invention relates to a method for producing a nanostructured substrate comprising an array of protruding nanostructures, which method comprises at least the following steps:
      a) providing a primary substrate;
      b) depositing at least one layer of a material capable to be removed by means of reactive ion etching (RIE) onto said primary substrate which layer comprises a predetermined gradient of its thickness;
      c) depositing a nanostructured etching mask onto the graded layer deposited in step b);
      d) generating protruding structures, in particular nanopillars, in the graded layer deposited in step b) by means of reactive ion etching (RIE), wherein simultaneously at least 2, preferably 3, predetermined continuous gradients of geometric parameters of the protruding structures are generated on the same substrate.
      More specifically, the geometric parameters are selected from the group comprising the height, diameter and spacing of the protruding nanostructures.
      A further aspect of the invention relates to a nanostructured substrate comprising an array of protruding nanostructures obtainable by the method as outlined above.
      In a preferred embodiment of said nanostructured substrate, each of the protruding nanostructures simultaneously represents an element of 3 continuous gradients of the height, diameter and spacing of said protruding nanostructures.
    • 本发明涉及一种用于生产包含突出的纳米结构阵列的方法,包括的纳米结构的衬底的至少以下步骤:a)提供主要的底物; b)中沉积的至少一个层的材料能够通过(RIE)反应性离子蚀刻的方式在其上包括在其厚度的层预定梯度所述初级衬底移除; c)沉积一个纳米结构蚀刻掩模走上在步骤b沉积梯度层); D)产生突出结构,尤其是纳米柱,在步骤b沉积)通过反应离子蚀刻的手段(RIE)的梯度层,worin同时至少2个,优选为3,产生凸起结构的几何参数的预定的连续梯度 在相同的基底上。 更具体地,所述几何参数从包括以下的组的突出,纳米结构的高度直径和间距选择。 在本发明的另一个方面涉及包含如上面所概述的方法突出纳米结构可获得的阵列的纳米结构的衬底。 在所述的优选实施例的纳米结构的衬底,各突出纳米结构的同时在darstellt元件的高度,直径和间距所述突出纳米结构的三个连续梯度。