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41. 发明公开

EP1134743A2 Magneto-resistive device and magneto-resistive effect type storage device 审中-公开
标题翻译： Magnetoresistive Anordnung und Speicheranordnung eines magnetoresitiven Effekt Typs
公开(公告)号：EP1134743A2
公开(公告)日：2001-09-19
申请号：EP01106056.3
申请日：2001-03-12
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Odagawa, Akihiro , Sakakima, Hiroshi , Morita, Kiyoyuki
IPC分类号： G11C11/16
CPC分类号： H01L27/224 , G11C11/16
摘要： A magneto-resistive device and a magnetic resistance effect type storage device are provided, which have improved selectivity and output signals by controlling bias to be applied. Two resistive devices (70, 71) are connected in series, and a magneto-resistive device is used for at least one of the resistive devices. When both of the resistive devices are magneto-resistive devices, their magnetic resistance should be controlled independently from each other, and by allowing the first magneto-resistive device to include a non-magnetic substance of an electrical insulator and the second magneto-resistive device to include a non-magnetic substance of a conductive substance, the second magneto-resistive device is operated as a bias control device for controlling the characteristics of the first magneto-resistive device so as to control the voltage to be applied to the storage device. Furthermore, when the other resistive device is configured to be a varistor type device, bias from the non-selected storage device is suppressed to improve the selectivity of the storage device.
摘要翻译：提供了一种磁阻装置和磁阻效应型存储装置，其通过控制要施加的偏压而具有改进的选择性和输出信号。两个电阻器件（70,71）串联连接，并且用于至少一个电阻器件的磁阻器件。当两个电阻性装置都是磁阻装置时，它们的磁阻应该彼此独立地控制，并且通过允许第一磁阻装置包括电绝缘体的非磁性物质和第二磁阻装置为了包括导电物质的非磁性物质，第二磁阻装置作为偏置控制装置运行，用于控制第一磁阻装置的特性，以控制施加到存储装置的电压。此外，当另一个电阻器件被配置为变阻器型器件时，来自非选择存储器件的偏压被抑制以提高存储器件的选择性。

42. 发明公开

EP1109169A2 MRAM having semiconductor device integrated therein 有权
标题翻译： MRAM具有集成在其中的半导体器件
公开(公告)号：EP1109169A2
公开(公告)日：2001-06-20
申请号：EP00127096.6
申请日：2000-12-11
申请人： MOTOROLA, INC.
发明人： Tehrani, Saied , Shi, Jing
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , H01L27/224 , H01L27/228
摘要： A magnetic memory cell (10) has a semiconductor layer (12) positioned between first (11) and second (13) ferromagnetic layers forming either a p-n or Schottky junction. A antimagnetic layer (34) is positioned between the second ferromagnetic layer and a digit line (35) for pinning a magnetic vector within the second ferromagnetic layer. In a second embodiment, a gate contact (37) is spaced apart from the layer of semiconductor material for controlling the electron flow through the semiconductor layer.
摘要翻译：磁存储器单元（10）具有位于形成p-n或肖特基结的第一（11）和第二（13）铁磁层之间的半导体层（12）。防磁层（34）位于第二铁磁层和数字线（35）之间，用于锁定第二铁磁层内的磁矢量。在第二实施例中，栅极触点（37）与半导体材料层间隔开，用于控制通过半导体层的电子流动。

43. 发明公开

EP0991078A3 Quantum random address memory with magnetic readout and/or nano-memory elements 审中-公开
标题翻译：具有磁性读出和/或纳米存储元件的量子随机地址存储器
公开(公告)号：EP0991078A3
公开(公告)日：2000-05-24
申请号：EP99119426.7
申请日：1999-09-30
申请人： MOTOROLA, INC.
发明人： Peterson, William M. , Chen, Eugene Y.
IPC分类号： G11C11/16 , G11C11/15
CPC分类号： H01L27/224 , G11C11/15 , G11C11/16 , G11C13/02
摘要： Quantum random address memory apparatus (30) including a low dimensional plurality of address ports (A,A 0 -A 7 ), a plurality of magnetic nano-memory elements (40), mixer elements (32) coupling the address ports to a high dimensional plurality of the plurality of magnetic nano-memory elements, and data output ports (V) and structure coupled to the plurality of magnetic nano-memory elements. The high dimensional plurality of magnetic nano-memory elements is greater than the low dimensional plurality of address ports by a number resulting in substantially error free memory recalls.
摘要翻译：包括低维多个地址端口（A，A0-A7），多个磁性纳米存储器元件（40），将所述地址端口耦合到高维多元化器件（40）的混合器元件（32）的量子随机地址存储器装置（30）所述多个磁性纳米存储元件中的数据输出端口（V）和结构耦合到所述多个磁性纳米存储元件。高维多个磁性纳米存储器元件比低维多个地址端口多一个数量，导致基本上无误的存储器召回。

44. 发明公开

EP0937302A1 SPIN DEPENDENT TUNNELING MEMORY 失效
标题翻译： SPIN效果依赖隧道MEMORY
公开(公告)号：EP0937302A1
公开(公告)日：1999-08-25
申请号：EP97949382.0
申请日：1997-11-07
申请人： NONVOLATILE ELECTRONICS, INCORPORATED
发明人： DAUGHTON, James, M. , EVERITT, Brenda, A. , POHM, Arthur, V.
IPC分类号： G11C11 , H01F10 , H01L21 , H01L27 , H01L43
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/5607 , H01F10/20 , H01F10/205 , H01F10/3254 , H01L27/224
摘要： A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses (12, 13, 13', 12'). These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is selecting or operating them, or both, in data storage and retrieval operations.

45. 发明授权

EP2224477B1 MAGNETIC MEMORY ELEMENT, METHOD FOR DRIVING THE MAGNETIC MEMORY ELEMENT, AND NONVOLATILE STORAGE DEVICE 有权
标题翻译：磁性存储元件，用于驱动磁性存储元件的方法以及非易失性存储装置
公开(公告)号：EP2224477B1
公开(公告)日：2017-05-31
申请号：EP08862686.6
申请日：2008-08-28
申请人： III Holdings 3, LLC
发明人： OGIMOTO, Yasushi , KAWAKAMI, Haruo
IPC分类号： H01L21/8246 , G11C11/16 , H01L27/105 , H01L43/08 , H01L27/22
CPC分类号： H01L43/08 , G11C7/04 , G11C11/1659 , G11C11/1675 , H01L27/224

46. 发明公开

EP2355142A4 MAGNETIC MEMORY ELEMENT AND NONVOLATILE STORAGE DEVICE 有权
标题翻译：磁存储元件和存储设备不挥发物
公开(公告)号：EP2355142A4
公开(公告)日：2014-10-29
申请号：EP09830245
申请日：2009-08-25
申请人： FUJI ELECTRIC CO LTD
发明人： OGIMOTO YASUSHI
IPC分类号： H01L21/8246 , G11C11/15 , G11C11/16 , H01L27/22 , H01L43/08
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08

47. 发明授权

EP2306510B1 MAGNETIC MEMORY ELEMENT AND ITS DRIVING METHOD AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁存储元件和控制非易失性存储设备的方法和
公开(公告)号：EP2306510B1
公开(公告)日：2013-01-23
申请号：EP08810130.8
申请日：2008-09-05
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi , KAWAKAMI, Haruo
IPC分类号： G11C11/16 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , G11C11/56 , H01F10/32 , B82Y25/00
CPC分类号： H01F10/3295 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01F10/133 , H01F10/3268 , H01F10/3286 , H01L27/224 , H01L43/08 , Y10T428/1107 , Y10T428/1143

48. 发明公开

EP2479787A1 MAGNETORESISTIVE ELEMENT AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING SAME 有权转让
标题翻译：磁阻元件和非易失性半导体存储装置
公开(公告)号：EP2479787A1
公开(公告)日：2012-07-25
申请号：EP10816986.3
申请日：2010-08-04
申请人： Fuji Electric Co., Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： H01L43/12 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element.
A magnetoresistance element 1-1 includes a magnetic tunnel junction portion 13 configured by sequentially stacking a perpendicularly magnetized first magnetic body 22, an insulation layer 21, and a perpendicularly magnetized second magnetic body 200. The second magnetic body 200 has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer 21 side interface. A heat assist layer 28-1 that heats the second magnetic body 200 with a heat generated based on a current flowing through the magnetic tunnel junction portion 13 is further provided, and the magnetization direction of the second magnetic body 200 is reversed by the heating of the second magnetic body 200. A non-volatile semiconductor storage device 10-1 includes the magnetoresistance element 1-1, a switching element connected in series to the magnetoresistance element 1-1, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element 1-1, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element 1-1.

49. 发明公开

EP2375464A1 MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME 失效转让
标题翻译：磁力元素在SPEICHERANORDNUNG DAMIT
公开(公告)号：EP2375464A1
公开(公告)日：2011-10-12
申请号：EP09834596.0
申请日：2009-10-02
申请人： Fuji Electric Co., Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/126 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/10 , H01L43/12
摘要： The present invention provides a magnetic memory element having a memory cell of size 4F 2 which realizes crosspoint-type memory. In a magnetic memory element 100, a first magnetic layer 22, a third magnetic layer (spin polarization enhancement layer) 27, an intermediate layer 21, a fourth magnetic layer (spin polarization enhancement layer) 26, and a second magnetic layer 20 are stacked in order. The intermediate layer 21 is made of an insulating material or a nonmagnetic material. The second magnetic layer 20 comprises a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer 22 comprises a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.
摘要翻译：本发明提供一种具有大小为4F 2的存储单元的磁存储元件，其实现交叉点型存储器。在磁存储元件100中，堆叠第一磁性层22，第三磁性层（自旋极化增强层）27，中间层21，第四磁性层（自旋极化增强层）26和第二磁性层20 为了。中间层21由绝缘材料或非磁性材料制成。第二磁性层20包括钆，铁和钴的三元合金，钆和钴的二元合金，或铽和钴的二元合金。或者，第一磁性层22包括铽，铁和钴的三元合金，或铽和钴的二元合金。

50. 发明公开

EP2355142A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE STORAGE DEVICE 有权
标题翻译： MAGNETISCHES SPEICHERELEMENT UND NICHTFLÜCHTIGESPEICHERVORRICHTUNG DAMIT
公开(公告)号：EP2355142A1
公开(公告)日：2011-08-10
申请号：EP09830245.8
申请日：2009-08-25
申请人： Fuji Electric Co., Ltd
发明人： OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： The present invention provides a magnetic memory element (8) that has a spin valve structure formed using a free layer (5), a non-magnetic layer (4), and a pinned layer (3). The free layer (5) has a three-layer structure having a first magnetic layer (51), an intermediate layer (52), and a second magnetic layer (53) arranged in this order viewed from the non-magnetic layer (4). The first magnetic layer (51) is made of a ferromagnetic material. The intermediate layer (52) is made of a non-magnetic material. The second magnetic layer (53) is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point T comp .
摘要翻译：本发明提供一种具有使用自由层（5），非磁性层（4）和钉扎层（3）形成的自旋阀结构的磁存储元件（8）。自由层（5）具有从非磁性层（4）观察的依次排列的第一磁性层（51），中间层（52）和第二磁性层（53）的三层结构，。第一磁性层（51）由铁磁材料制成。中间层（52）由非磁性材料制成。第二磁性层（53）由在存储器存储操作可用的温度范围内具有磁补偿点的N型铁磁材料制成。第一磁性层的磁化方向和第二磁性层的磁化方向在低于磁补偿点T comp的温度下彼此平行。

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