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    • 44. 发明公开
    • Method for producing a copper thin film
    • Verfahren zur Herstellung einerdünnenKupferschicht
    • EP1662020A1
    • 2006-05-31
    • EP06004367.6
    • 2004-06-29
    • MEC COMPANY LTD.
    • Otani, MinoruHisada, JunMawatari, Toyoki
    • C23C16/00
    • C23C18/08
    • A method for producing a copper thin film, comprising:

      heating a copper compound at a temperature of 100°C to 300°C in a non-oxidizing atmosphere of copper; and
      cooling the copper compound to 60°C or lower to form a copper thin film,
      the copper compound having a decomposition temperature in a range of 100°C to 300°C and comprising one unit or an oligomer or polymer of units represented by the following Formula (1):

               [R 1 COO] n [NH 3 ] m CuX 1 p      (1)

      where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R 1 respectively represent the following Formula (2), CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H, and may be the same or different from each other, or n is 2 and two pieces of [R 1 COO] represent together the following Formula (3); R 2 , R 3 , and R 4 are respectively CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H; R 5 is -(CHX 2 ) r -; X 2 is H, OH, or NH 2 ; r is 0 to 4; q is 1 to 4; and X 1 is NH 4 + , H 2 O or solvent molecules


               [-OOC-R 5 -COO-]     (3).
    • 一种铜薄膜的制造方法,其特征在于,在铜的非氧化性气氛中,在100〜300℃的温度下加热铜化合物, 并将铜化合物冷却至60℃以下,形成铜薄膜,所述铜化合物的分解温度为100℃〜300℃,所述铜化合物为1单元或低聚物或由 以下公式(1):€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 COO] n [NH 3] m CuX 1 p€ƒ€ƒ€ƒ€ƒ(1)其中 n为1〜3; m为1〜3; p为0〜1; n个R 1分别表示下式(2),CH 2 X 2,CH 2 X 2(CHX 2)q,NH 2或H,可以相同也可以不同,n为2 和两个[R 1 COO]一起表示下式(3)。 R 2,R 3和R 4分别为CH 2 X 2,CH 2 X 2(CHX 2)q,NH 2或H; R 5为 - (CHX 2)r - ; X 2是H,OH或NH 2; r为0〜4; q为1〜4; 和X 1是NH 4 +,H 2 O或溶剂分子€ƒ€ƒ€ƒ€ƒ€ƒ[-OOC-R 5 -COO-]€ƒ€ƒ€ƒ€ƒ (3)。
    • 47. 发明公开
    • Solid electrolytic gas sensing element comprising active electrode
    • Festelektrolytischer Gassensor enthaltend eine aktive Elektrode
    • EP1596191A1
    • 2005-11-16
    • EP05016239.5
    • 2001-08-06
    • DENSO CORPORATION
    • E, GangKobayashi, KiyomiHotta, YasumichiFuji, Namitsugu
    • G01N27/407
    • G01N27/4075C23C18/08C23C18/14C23C18/165
    • A gas sensing element (1) comprising a solid electrolytic body (10), a reference gas side electrode (12) provided on a surface of said solid electrolytic body so as to be exposed to a reference gas, and a measured gas side electrode (11) provided on another surface of said solid electrolytic body so as to be exposed to a measured gas.
      A crystal face ratio of I(200) to I(111) in said measured gas side electrode according to X-ray diffraction satisfies the following relationship 0.7 ≤ {I(200)/I(111)}, or a crystal face ratio of I(220) to I(111) in said measured gas side electrode according to X-ray diffraction satisfies the following relationship 0.6 ≤ {I(220)/I(111)}, wherein I(200) represents an X-ray diffraction intensity at an X-ray diffraction angle corresponding to a crystal face (200) of said measured gas side electrode, and I(111) represents an X-ray diffraction intensity at an X-ray diffraction angle corresponding to a crystal face (111) of said measured gas side electrode.
    • 一种气体感测元件(1),包括固体电解体(10),设置在所述固体电解质体的表面上以暴露于参考气体的参考气体侧电极(12)和测量气体侧电极 11)设置在所述固体电解质体的另一表面上以暴露于测量的气体。 根据X射线衍射,所测量的气体侧电极中的I(200)至I(111)的晶面比率满足以下关系式0.7≤äI(200)/ I(111)ü或晶体 根据X射线衍射,所测量的气体侧电极中I(220)与I(111)的面积比满足以下关系式0.6≤ΔI(220)/ I(111)ü,其中I(200) 对应于所述测量气体侧电极的晶面(200)的X射线衍射角的X射线衍射强度,I(111)表示与晶面对应的X射线衍射角的X射线衍射强度( 111)所述测量的气体侧电极。