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41. 发明授权

EP0796646B1 Method for the removal of carbon dioxide present in gases and absorbent 失效
标题翻译：一种用于从气体和吸收剂除去二氧化碳过程
公开(公告)号：EP0796646B1
公开(公告)日：2003-11-12
申请号：EP97301767.6
申请日：1997-03-17
申请人： THE KANSAI ELECTRIC POWER CO., INC. , MITSUBISHI HEAVY INDUSTRIES, LTD.
发明人： Suzuki, Hitomi , Iwaki, Toru, c/o Mitsubishi Heavy Industries Ltd , Mimura, Tomio, The Kansai Electric Power Co. Inc. , Mitsouka, Shigeaki, Mitsubishi Heavy Ind. Ltd , Tanaka, Hiroshi, Mitsubishi Heavy Ind. Ltd , Iijima, Masaki, Mitsubishi Heavy Ind. Ltd
IPC分类号： B01D53/14
CPC分类号： B01D53/1493 , B01D53/1475 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： This invention provides a method for the removal of carbon dioxide present in gases which comprises bringing a CO2-containing gas into contact with an aqueous solution containing at least one amine compound of the general formula Ä1Ü wherein R to R may be the same or different and each represent a hydrogen atom or an alkyl group of 1 to 4 carbon atoms, and m is 0 or 1. The method of the present invention makes it possible to remove carbon dioxide efficiently. In particular, since carbon dioxide can be easily desorbed by heating the aqueous solution having absorbed carbon dioxide, the thermal energy required for regeneration of the aqueous solution can be reduced.

42. 发明授权

EP0997440B1 Process for accelerating reaction of ozone and waste water with a catalyst 有权
标题翻译：一种加速臭氧和废水的反应用催化剂的帮助过程
公开(公告)号：EP0997440B1
公开(公告)日：2003-07-02
申请号：EP98122302.7
申请日：1998-11-24
申请人： KANSAI ELECTRIC POWER CO., INC.
发明人： Yoshikawa, Motonobu , Murai, Akira , Kouno, Ikuo, Yano Patent Office , Miura, Kazuhiro
IPC分类号： C02F1/78
CPC分类号： C02F1/78 , Y10S210/916 , Y10S210/917

43. 发明授权

EP0778356B1 Ferritic heat resistant steels 失效
标题翻译：铁素体耐热钢热
公开(公告)号：EP0778356B1
公开(公告)日：2003-03-05
申请号：EP95924503.6
申请日：1995-07-05
申请人： Morinaga, Masahiko , Murata, Yoshinori , THE KANSAI ELECTRIC POWER CO., INC.
发明人： MORINAGA, Masahiko 152, Meidai Yada-cho Shukusha , MURATA, Yoshinori , HASHIZUME, Ryokichi The Kansai Elt. Power Co., Inc
IPC分类号： C22C38/00 , C22C38/02 , C22C38/30 , C22C38/54
CPC分类号： C22C38/36 , C22C38/00 , C22C38/001 , C22C38/22 , C22C38/26 , C22C38/54

44. 发明公开

EP1249273A1 Gas-liquid contact plate and gas-liquid contactor 有权
标题翻译： Verfahren zur Herstellung einer Gas-Flüssigkeitskontaktplatte
公开(公告)号：EP1249273A1
公开(公告)日：2002-10-16
申请号：EP02002081.4
申请日：2002-02-11
申请人： THE KANSAI ELECTRIC POWER CO., INC. , Mitsubishi Heavy Industries, Ltd.
发明人： Mimura, Tomio, The Kansai Electric Power Co., Inc. , Nojo, Takashi, The Kansai Electric Power Co., Inc. , Yoshizumi, Naoyuki, Mitsubishi Heavy Ind., Ltd. , Ohira, Hiroshi, Mitsubishi Heavy Ind., Ltd. , Yoshiyama, Ryuji, Mitsubishi Heavy Ind., Ltd. , Iwasaki, Kenji, Mitsubishi Heavy Ind., Ltd.
IPC分类号： B01J19/32 , B01D53/14
CPC分类号： B01D3/16 , B01D53/185 , B01J19/32 , B01J2219/3221 , B01J2219/32227 , B01J2219/32237 , B01J2219/32408 , B01J2219/328 , B01J2219/3288 , B01J2219/3325 , Y10T29/496
摘要： The gas-liquid contact plate (1) is constructed so that a plurality of straight rows are provided; irregularities are formed over both surfaces of the plate at equal intervals in the row; the adjacent rows have repeated irregularities opposite to each other; and in a peak or valley portion of the irregularities, there is formed an opening (11) connecting the surface to the back surface between the adjacent rows. There is provided a gas-liquid contact plate (1) that has high wettability, being capable of improving the gas-liquid contact efficiency, and is light in weight and advantageous in terms of manufacturing cost.
摘要翻译：接触板（1）的相对表面在几行中以相等的间隔包括不规则性，使得相邻的行具有彼此相反的重复的不规则性。不规则部分的峰部或谷部包括连接相邻行之间的板的相对表面的开口（11）。

45. 发明公开

EP1176118A1 Ozone storing method and ozone extracting method 审中-公开
标题翻译： Verfahren zur Speicherung und zur Extraktion von Ozon
公开(公告)号：EP1176118A1
公开(公告)日：2002-01-30
申请号：EP01118366.2
申请日：2001-07-27
申请人： THE KANSAI ELECTRIC POWER CO., INC.
发明人： Murai, Akira
IPC分类号： C01B13/10
CPC分类号： C01B13/10
摘要： An ozone storage apparatus for storing ozone efficiently and extracting ozone effectively is disclosed. Also ozone storage methods comprising the steps of supplying ozone either to a dried silica gel which is produced by neutralizing sodium silicate and sulfuric acid and that is then washed with water to a pH level between 6 and 7 or further processing the dried silica gel by crushing it and washing with at least one of a sulfuric acid or water. The methods also include a process where if oxygen has been adsorbed in the silica gel, a vacuum is created inside the storage container holding the silica gel, and then ozone can be supplied to the silica gel. Silica gel containing aluminum between 0.002 - 0.1 percent by weight is used for the storage medium. Also, the ozone is extracted from a tube-valve associated with the storage container by a natural downward flow.
摘要翻译：公开了一种有效地储存臭氧并有效提取臭氧的臭氧储存装置。臭氧储存方法还包括将臭氧供给到通过中和硅酸钠和硫酸产生的干燥硅胶，然后用水洗涤至pH6-6之间的pH值，或进一步通过粉碎处理干燥的硅胶并用至少一种硫酸或水洗涤。该方法还包括如果氧气已经吸附在硅胶中，则在保持硅胶的储存容器内产生真空，然后将臭氧供给至硅胶。存储介质使用含有0.002-0.1重量％的铝的硅胶。此外，通过自然向下的流动，从与储存容器相关联的管阀中提取臭氧。

46. 发明授权

EP0705637B1 Process for removing carbon dioxide from gases 失效
公开(公告)号：EP0705637B1
公开(公告)日：2001-09-19
申请号：EP95305722.1
申请日：1995-08-16
申请人： THE KANSAI ELECTRIC POWER CO., INC. , MITSUBISHI JUKOGYO KABUSHIKI KAISHA
发明人： Suzuki, Hitomi , Hayakawa, Atsushi , Mimura, Tomio, c/o The Kansai Elec. Power Co.,Inc. , Shimojo, Shigeru, The Kansai Elec. Power Co.,Inc. , Shimayoshi, Hidenobu The Kansai Elec.Power Co.Inc. , Iijima, Masaki, c/o Mitsubishi Jukogyo K.K. , Mitsuoka, Shigeaki, c/o Hiroshima Mitsubishi , Iwaki, Toru, c/o Hiroshima Mitsubishi
IPC分类号： B01D53/14
CPC分类号： B01D53/62 , B01D53/1475 , B01D53/1493 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： This invention relates to the process for removing CO2 from CO2-containing gas such as combustion gas. For example, it is the process for removing CO2 from combustion gas through the contact of the gas at the atmospheric pressure with an aqueous solution of an amine represented by the general formula R NHC(CH3)2CH2OH in which R is a lower alkyl group having 1-4 carbon atoms, or an aqueous solution containing both an amine represented by the general formula R CHR NHCH2CH2OH in which R is a hydrogen atom or a lower alkyl group having 1-4 carbon atoms and R is a hydrogen atom or methyl group and a piperazine compound selected from the group consisting of piperazine, 2-methylpiperazine, 2,3-dimethylpiperazine, and 2,5-dimethylpiperazine, or an mixed aqueous amine solution containing a secondary amine and a tertiary amine at concentrations of 10-45% by weight each, or an aqueous solution of a piperazine derivative.

47. 发明公开

EP1128443A1 FIELD-EFFECT SEMICONDUCTOR DEVICE 有权
标题翻译： FELDEFFEKT-HALBLEITERBAUEMENTMENT VERFAHREN ZU DESSEN HERSTELLUNG
公开(公告)号：EP1128443A1
公开(公告)日：2001-08-29
申请号：EP99970509.8
申请日：1999-10-07
申请人： THE KANSAI ELECTRIC POWER CO., INC.
发明人： SUGAWARA, Yoshitaka , ASANO, Katsunori
IPC分类号： H01L29/80 , H01L29/74 , H01L29/78
CPC分类号： H01L29/7391 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/66234 , H01L29/66356 , H01L29/66378 , H01L29/739 , H01L29/7392 , H01L29/744 , H01L29/749 , H01L29/7827 , H01L29/7828 , H01L29/7832
摘要： A buried gate region, a buried gate contact region and a gate contact region are provided on an SiC substrate. Thereby, a depletion layer expands in the channel region, and a high withstand voltage is attained in the normally off state. By applying a voltage of the built-in voltage or less to a gate, the depletion layer in the channel region becomes narrower and an ON-state resistance becomes low. Furthermore, when a voltage of the built-in voltage or more is applied to the gate, holes are injected from the gate so as to cause the conductivity modulation, and the ON-state resistance becomes further low.
摘要翻译：掩埋栅极区域，掩埋栅极接触区域和栅极接触区域设置在SiC衬底上。由此，耗尽层在沟道区域扩展，并且在常关状态下获得高的耐受电压。通过对栅极施加内置电压以下的电压，沟道区域的耗尽层变窄，导通电阻变低。此外，当向栅极施加内置电压以上的电压时，从栅极注入空穴，引起电导率调制，导通状态电阻进一步变低。

48. 发明公开

EP0862036A3 Heat exchanger of gas-liquid contacting plate type 失效
标题翻译：用气 - 液接触的板式热交换器
公开(公告)号：EP0862036A3
公开(公告)日：2000-03-29
申请号：EP98110223.9
申请日：1994-09-28
申请人： THE KANSAI ELECTRIC POWER CO., INC. , MITSUBISHI JUKOGYO KABUSHIKI KAISHA
发明人： Fujii, Masumi, The Kansai Elec. Power Co. Inc. , Suda, Taiichiro, The Kansai Elec. Power Co. Inc. , Hotta, Yoshitsugu, The Kansai Elec. Power Co. Inc. , Kitamura, Koichi, The Kansai Elec. Power Co. Inc. , Jinno, Yukihiro, The Kansai Elec. Power Co. Inc. , Mimura, Tomoi, The Kansai Elec. Power Co. Inc. , Shimojo, Shigeru, The Kansai Elec. Power Co. Inc. , Mitsuoka, Shigeaki, Hiroshima Res. & Dev. Center , Iijima, Masaki
IPC分类号： F28D15/02 , F28F13/00 , F28D3/00 , F28F1/24
CPC分类号： F28F13/003 , B01D53/1475 , F28D3/00 , F28D15/02 , F28D15/0275 , F28F1/24 , Y02C10/06 , Y10S165/907
摘要： A heat exchanger (2) of gas-liquid contacting plate type includes: a plurality of heat transfer plates (4), disposed vertically at certain intervals, defining air flow passages therebetween which allow air to rise, and each of the plates (4) has a heat medium flowing passage thereinside for allowing a heat medium (C) to flow therethrough while the side surfaces of each of the heat transfer plates (4), which define the air flow passages, are adhered with nets (30) for allowing a liquid to flow downward along the nets and plates.

49. 发明授权

EP0303171B2 A variable speed generator-motor apparatus 失效
标题翻译：与变速发电机 - 马达装置
公开(公告)号：EP0303171B2
公开(公告)日：1999-05-06
申请号：EP88112627.0
申请日：1988-08-03
申请人： HITACHI, LTD. , THE KANSAI ELECTRIC POWER CO., INC.
发明人： Bando, Akira , Nagura, Osamu , Saito, Keiji , Miyashita, Ikuro , Nagai, Hashime , Nakagawa, Hiroto , Oono, Yasuteru
IPC分类号： H02H7/06 , H02P9/10
CPC分类号： H02H7/06

50. 发明公开

EP0893830A1 INSULATED GATE SEMICONDUCTOR DEVICE 失效
标题翻译： HALBLEITERANORDNUNG麻醉剂异构体门
公开(公告)号：EP0893830A1
公开(公告)日：1999-01-27
申请号：EP97947874.0
申请日：1997-12-10
申请人： THE KANSAI ELECTRIC POWER CO., INC. , Hitachi, Ltd.
发明人： SUGAWARA, Yoshitaka , ASANO, Katsunori
IPC分类号： H01L29/78
CPC分类号： H01L29/1095 , H01L29/0623 , H01L29/1608 , H01L29/42368 , H01L29/66068 , H01L29/7397 , H01L29/7398 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： In a semiconductor device having a trench type insulated gate structure, in the case where a drift layer 2 of an n-conduction type has a high carrier density, when a high voltage is applied between a drain and a source in such a manner that a channel is not formed, the electric field strength of an insulator layer 9 below the trench type insulated gate is increased, thus causing breakdown. The withstand voltage of the semiconductor device is limited by the breakdown of the insulator layer 9, and it is difficult to realize high withstand voltage.
In the characteristic of the present invention, a field relaxation semiconductor region 1 of a conduction type opposite to the conduction type of the drift layer 2 is formed within the drift layer 2 below the insulator layer 9 in the trench of the trench type insulated gate semiconductor device. Also, the thickness of a bottom portion of the insulator layer 9 provided in the trench of the trench type insulated gate semiconductor device is made significantly greater than the thickness of a lateral portion thereof.
摘要翻译：在具有沟槽型绝缘栅极结构的半导体器件中，在n-导体类型的漂移层2具有高载流子密度的情况下，当在漏极和源极之间施加高电压时，通道不形成，沟槽型绝缘栅下方的绝缘体层9的电场强度增加，从而导致击穿。半导体器件的耐压受到绝缘体层9的击穿的限制，难以实现高耐压。在本发明的特征中，在沟槽型绝缘栅极半导体的沟槽中的绝缘体层9的下方的漂移层2内形成有与漂移层2的导电型相反的导电类型的场弛豫半导体区域1 设备。此外，设置在沟槽型绝缘栅极半导体器件的沟槽中的绝缘体层9的底部的厚度明显大于其侧面部分的厚度。

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