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1. 发明公开

EP2725615A1 Semiconductor device comprising a diode and method for producing such a device 有权转让
标题翻译：一种半导体器件，包括制造该装置的一个二极管和方法
公开(公告)号：EP2725615A1
公开(公告)日：2014-04-30
申请号：EP12190455.1
申请日：2012-10-29
申请人： IMEC
发明人： Hellings, Geert , Scholz, Mirko , Linten, Dimitri
IPC分类号： H01L27/02 , H01L29/866 , H01L21/329 , H01L29/06 , H01L29/36
CPC分类号： H01L23/60 , H01L27/0255 , H01L29/0649 , H01L29/0688 , H01L29/36 , H01L29/6609 , H01L29/66098 , H01L29/66106 , H01L29/66234 , H01L29/7302 , H01L29/735 , H01L29/866 , H01L2924/0002 , H01L2924/00
摘要： The present invention is related to a semiconductor device comprising a diode junction between two semiconductor regions of different doping types, in particular between an upper portion of an active area and the remainder of said area, said active area being defined in a substrate surface between two field dielectric regions. The upper portion is a portion of the active area that is lower in width than the active area itself. In a preferred embodiment, the device of the invention is an ESD comprising such a diode. In addition, the active area is provided with a doping profile, exhibiting a maximum value at the surface of said active area, and changing to a minimum value at a higher depth, said depth preferably being higher than half the depth of the upper portion. The diode does not require an ESD implant for lowering the holding voltage. As such the device and method according to the invention allow to reduce the number of processing steps in the production of ESD and other devices comprising a diode junction.
摘要翻译：本发明，特别地之间的有源区域和所述区域的剩余部分的上部涉及到半导体器件，包括不同的掺杂类型的两个半导体区域之间的二极管结，所述的基底表面限定二者之间的活性区场电介质区域。上部是有源区域的一部分所做的是在宽度上比所述有源区本身低。在优选实施方案中，本发明的装置是包括寻求二极管的ESD。此外，有源区设置有掺杂分布，参展在所述有源区的表面上的最大值，并且在较高的深度变化到最小值，所述深度优选为比上部的深度的一半更高。二极管不要求ESD植入物用于降低保持电压。作为检查的装置和方法雅丁发明允许以减少的生产ESD的包括二极管结的处理步骤和其它设备的数量。

2. 发明公开

EP4356430A1 SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES 审中-实审
公开(公告)号：EP4356430A1
公开(公告)日：2024-04-24
申请号：EP22856538.8
申请日：2022-08-10
申请人： Ideal Power Inc.
发明人： BU, Jiankang , BULUCEA, Constantin , MOJAB, Alireza , KNAPP, Jeffrey , BRDAR, Robert Daniel
IPC分类号： H01L29/732 , H03K17/60
CPC分类号： H01L29/732 , H01L29/0692 , H01L29/1012 , H01L29/0804 , H01L29/0821 , H01L29/41708 , H01L29/66234 , H01L29/42304 , H01L29/1004

3. 发明公开

EP2693463A1 SEMICONDUCTOR DEVICE HAVING AMPLIFICATION FACTOR WITH LESS DEPENDENCE ON CURRENT VALUE 审中-公开
标题翻译： HALBLEITERVORRICHTUNG MITVERSTÄRKUNGSFAKTOR麻省理工学院ABHÄNGIGKEITVOM STROMWERT
公开(公告)号：EP2693463A1
公开(公告)日：2014-02-05
申请号：EP12763747.8
申请日：2012-02-01
申请人： National Institute of Advanced Industrial Science and Technology
发明人： HAYASHI, Yutaka , NAGAMUNE, Yasushi , OTA, Toshitaka
IPC分类号： H01L21/331 , H01L29/732
CPC分类号： H01L29/66234 , H01L29/0692 , H01L29/0821 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L29/7322
摘要： An object of the present invention is to amplify the current which varies by a factor of several orders of magnitude with a constant gain without using a complicated circuit. In order to solve the problem, with a semiconductor device includes a first semiconductor region of a first conductivity, a second semiconductor region which is an opposite conductivity and is in contact with the first semiconductor region and a third semiconductor region which is the first conductivity and is in contact with the second semiconductor region at the second surface, a fourth semiconductor region in contact with the second semiconductor region is provided so as to be separated from the third semiconductor region and enclose the third semiconductor region and an impurity concentration of the fourth semiconductor region is larger than that of the second semiconductor region.
摘要翻译：本发明的目的是在不使用复杂电路的情况下以恒定增益来放大以几个数量级的因子变化的电流。为了解决这个问题，半导体器件包括第一导电性的第一半导体区域，与第一半导体区域相接触并与第一半导体区域接触的第二半导体区域和作为第一导电性的第三半导体区域，在第二表面处与第二半导体区域接触，设置与第二半导体区域接触的第四半导体区域，以与第三半导体区域分离并且包围第三半导体区域，并且第四半导体区域的杂质浓度区域大于第二半导体区域的区域。

4. 发明公开

EP2685502A1 Circuit integre sur soi comprenant un transistor bipolaire a tranchees d'isolation de profondeurs distinctes 审中-公开
标题翻译：包括具有不同深度的隔离槽的双极晶体管SOI集成电路
公开(公告)号：EP2685502A1
公开(公告)日：2014-01-15
申请号：EP13175437.6
申请日：2013-07-05
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , STmicroelectronics SA
发明人： Fenouillet-Beranger, Claire , Fonteneau, Pascal
IPC分类号： H01L27/12 , H01L27/02 , H01L29/786 , H01L27/06
CPC分类号： H01L29/66234 , H01L27/0259 , H01L27/0296 , H01L27/0688 , H01L27/1207 , H01L29/0649 , H01L29/66272 , H01L29/732 , H01L29/78606
摘要： L'invention concerne un circuit intégré, comprenant :
-un substrat semi-conducteur (91) ;
-une couche de silicium (15) dans laquelle des composants électroniques (1) sont ménagés ;
-une couche isolante enterrée (92);
-un transistor bipolaire comportant un collecteur (31) et un émetteur (32), un contact de base (33) et une base (35) coplanaires ;
-un caisson (34), disposé à l'aplomb du collecteur, de l'émetteur, de la base et du contact de base, le caisson séparant le collecteur, l'émetteur et le contact de base par rapport au substrat;
-une première tranchée d'isolation (42) disposée à l'aplomb de la base (35) et s'étendant en profondeur au-delà de la couche isolante enterrée (92) sans atteindre le fond du collecteur (34);
-une deuxième tranchée d'isolation (43) séparant le contact de base du collecteur et de l'émetteur, la deuxième tranchée d'isolation s'étendant en profondeur au-delà de la première couche isolante enterrée.
摘要翻译：该电路具有一个半导体衬底（91），和所述半导体衬底和硅（15）的层之间布置的埋入绝缘层（92）。的隔离沟槽（42）被布置成与基座（35），其中所述沟槽在超出所述掩埋隔离层的深度方向上延伸。另一个隔离沟槽（43）是基极接触（33）和集电极（31）和发射器（32）之间设置。后期隔离沟槽延伸至超过所述掩埋隔离层的深度到井中（34），其中，所述深度大于前者隔离沟槽的深度。

5. 发明授权

EP0431836B1 Semiconductor device and electronic device by use of the semiconductor 失效
标题翻译：使用半导体的半导体器件和电子设备
公开(公告)号：EP0431836B1
公开(公告)日：1996-06-05
申请号：EP90312980.7
申请日：1990-11-29
申请人： CANON KABUSHIKI KAISHA
发明人： Morishita, Masakazu, c/o Canon Kabushiki Kaisha
IPC分类号： H01L29/08 , H01L29/73 , H01L21/331
CPC分类号： H01L29/66234 , H01L29/0895 , H01L29/7311

6. 发明公开

EP4391027A1 SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR, AND RADIO FREQUENCY CIRCUIT 审中-实审
公开(公告)号：EP4391027A1
公开(公告)日：2024-06-26
申请号：EP21956343.4
申请日：2021-09-08
申请人： Huawei Technologies Co., Ltd.
发明人： XU, Xiangming , JIAN, Zhongxiang
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/737 , H01L29/66234
摘要： Embodiments of this application provide a semiconductor structure and a preparation method thereof, and a radio frequency circuit, and relate to the field of semiconductor technologies, to provide a SiGe HB device structure that has a relatively simple process and has a relatively large potential to implement high performance. The semiconductor structure includes: a substrate, including a collector region buried in the substrate; an intrinsic base region, disposed on a surface of the substrate, and in contact with the collector region on the surface of the substrate; an extrinsic base region, disposed on the surface of the substrate, located at a periphery of the intrinsic base region, and in contact with the intrinsic base region; an auxiliary layer having an opening, where the auxiliary layer is disposed on the extrinsic base region; an emitter region, disposed on the auxiliary layer, and in contact with the intrinsic base region through the opening; and an inner side wall, disposed between the extrinsic base region and the emitter region.

7. 发明公开

EP4386856A1 FIN-BIPOLAR JUNCTION TRANSISTOR AND PREPARATION METHOD THEREFOR, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4386856A1
公开(公告)日：2024-06-19
申请号：EP21961842.8
申请日：2021-10-28
申请人： Huawei Technologies Co., Ltd.
发明人： TIAN, Ziliang , WAN, Guangxing , QIU, Chengbo , WONG, Waisum
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/73 , H01L29/66234
摘要： Embodiments of this application relate to the field of semiconductor technologies, and provide a fin-bipolar junction transistor, a preparation method of the fin-bipolar junction transistor, and an electronic device, to resolve a problem of how to form a FinBJT, having a strong driving current capability, that can be mass produced and used in products. The fin-bipolar junction transistor FinBJT includes a substrate, and two collectors, a plurality of emitters, and at least one base that are disposed on the substrate. In the FinBJT, each collector includes at least one fin, each emitter includes at least one fin, and each base includes at least one fin. For example, the collector, the emitter, and the base may be formed by using a FinFET process. In the FinBJT, the plurality of emitters and the at least one base are all located between the two collectors, each collector is adjacent to one of the plurality of emitters, and the base is disposed between adjacent emitters. A layout manner of the emitter and the base is adjusted, so that an area proportion of the emitter is increased, thereby improving a driving current capacity of the FinBJT.

8. 发明授权

EP1128443B1 FIELD-EFFECT SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：场效应半导体分量与方法研究
公开(公告)号：EP1128443B1
公开(公告)日：2009-12-30
申请号：EP99970509.8
申请日：1999-10-07
申请人： The Kansai Electric Power Co., Inc.
发明人： SUGAWARA, Yoshitaka , ASANO, Katsunori
IPC分类号： H01L29/808 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7391 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/66234 , H01L29/66356 , H01L29/66378 , H01L29/739 , H01L29/7392 , H01L29/744 , H01L29/749 , H01L29/7827 , H01L29/7828 , H01L29/7832

9. 发明公开

EP1128443A4 FIELD-EFFECT SEMICONDUCTOR DEVICE 有权
标题翻译： FELDELFEKT半导体部件
公开(公告)号：EP1128443A4
公开(公告)日：2007-08-01
申请号：EP99970509
申请日：1999-10-07
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA , ASANO KATSUNORI
IPC分类号： H01L21/04 , H01L21/329 , H01L21/331 , H01L21/332 , H01L29/10 , H01L29/24 , H01L29/739 , H01L29/744 , H01L29/749 , H01L29/772 , H01L29/78 , H01L29/80 , H01L29/74
CPC分类号： H01L29/7391 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/66234 , H01L29/66356 , H01L29/66378 , H01L29/739 , H01L29/7392 , H01L29/744 , H01L29/749 , H01L29/7827 , H01L29/7828 , H01L29/7832
摘要： A buried gate region, a buried gate contact region, and a gate contact region are provided in an SiC substrate. Therefore, a depletion layer extends into a channel region, so that the breakdown strength is strong in a normally-off state. When a voltage lower than the built-in voltage is applied to the gate, the depletion layer is narrowed, and the on-resistance is lowered. When a voltage higher than the built-in voltage is applied to the gate, holes are injected from the gate, and conductivity modulation is caused, thereby lowering the on-resistance.

10. 发明公开

EP2693463A4 SEMICONDUCTOR DEVICE HAVING AMPLIFICATION FACTOR WITH LESS DEPENDENCE ON CURRENT VALUE 审中-公开
标题翻译：增益因子半导体器件ON电流值依赖性小
公开(公告)号：EP2693463A4
公开(公告)日：2014-09-17
申请号：EP12763747
申请日：2012-02-01
申请人： NAT INST OF ADVANCED IND SCIEN
发明人： HAYASHI YUTAKA , NAGAMUNE YASUSHI , OTA TOSHITAKA
IPC分类号： H01L21/331 , H01L29/10 , H01L29/732
CPC分类号： H01L29/66234 , H01L29/0692 , H01L29/0821 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L29/7322

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