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41. 发明公开

EP2546874A1 Stacked Half-Bridge Power Module 有权转让
标题翻译： GestapeltesHalbbrückenleistungsmodul
公开(公告)号：EP2546874A1
公开(公告)日：2013-01-16
申请号：EP12173355.4
申请日：2012-06-25
申请人： International Rectifier Corporation
发明人： Hauenstein, Henning M.
IPC分类号： H01L25/07 , H05K7/20
摘要： According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode.
摘要翻译：根据示例性实施例，堆叠半桥功率模块包括具有耦合到高侧基板的高侧功率端子的高侧装置和具有耦合到低侧基板的低侧功率端子的低侧装置。高侧和低侧装置堆叠在公共导电接口的相对侧上。公共导电接口将高侧设备的高侧输出端子电气地，机械地和热耦合到低侧设备的低侧输出端子。高侧器件和低侧器件各自可以包括与二极管并联的绝缘栅双极晶体管（IGBT）。

42. 发明公开

EP2357666A2 III-nitride power device with solderable front metal 有权转让
标题翻译： III-Nitrid-Leistungsbauelement mitlötbaremFrontmetall
公开(公告)号：EP2357666A2
公开(公告)日：2011-08-17
申请号：EP11000918.0
申请日：2011-02-04
申请人： International Rectifier Corporation
发明人： Cheah, Chuan , Briere, Michael, A.
IPC分类号： H01L23/482
CPC分类号： H01L29/41758 , H01L23/293 , H01L23/4824 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L27/088 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/4175 , H01L29/452 , H01L29/7787 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/05022 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05555 , H01L2224/05556 , H01L2224/05563 , H01L2224/05567 , H01L2224/056 , H01L2224/05639 , H01L2224/0603 , H01L2224/0615 , H01L2224/0616 , H01L2224/06177 , H01L2224/131 , H01L2224/29005 , H01L2224/29014 , H01L2224/29023 , H01L2224/291 , H01L2224/29101 , H01L2224/2919 , H01L2224/3003 , H01L2224/3015 , H01L2224/30177 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/10253 , H01L2924/1306 , H01L2924/13064 , H01L2924/14 , H01L2924/19041 , H02M3/158 , H01L2924/01028 , H01L2924/00
摘要： Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers (130) and a solderable front metal structure (140a,140b) using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.
摘要翻译：已经公开了使用用于外部电路连接的焊料条的包括具有多个互连金属层（130）和可焊接前金属结构（140a，140b）的HEMT的III族氮化物功率器件的一些示例性实施例。可焊接的前金属结构可以包括诸如TiNiAg的三金属，并且可以被配置为暴露HEMT的源极和漏极接触作为交替的细长数字或条。另外，单个封装可以集成多个这样的HEMT，其中前金属结构暴露出交替的指示的源极和漏极触点，这对于使用III族氮化物器件的DC-DC功率转换电路设计是有利的。通过使用焊条进行外部电路连接，可以进行横向导通，从而有利于减少器件Rdson。

43. 发明公开

EP2333822A2 High voltage durability III-nitride semiconductor device 有权转让
标题翻译：高耐压III族氮化物半导体器件
公开(公告)号：EP2333822A2
公开(公告)日：2011-06-15
申请号：EP10015287.5
申请日：2010-12-03
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L21/335 , H01L29/04 , H01L29/20 , H01L29/778
CPC分类号： H01L29/778 , H01L21/8258 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： A high voltage durability III-nitride semiconductor device comprises a support substrate (10) including a first silicon body (14), an insulator body (18) over the first silicon body (14), and a second silicon body (16) over the insulator body (18). The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body (12) characterized by a majority charge carrier conductivity type, formed over the second silicon body (16). The second silicon body (16) has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate (10) including a silicon layer (14), an insulator layer (18) over the silicon layer (14), and a P type conductivity silicon layer (16) over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body (12) formed over the P type conductivity silicon layer (16), the III-nitride semiconductor body (12) forming a heterojunction of the HEMT.
摘要翻译：一种高电压耐久性III族氮化物半导体器件，包括：支撑衬底（10），其包括第一硅本体（14），在第一硅本体（14）上的绝缘体本体（18）以及第二硅本体绝缘体（18）。高电压耐久性III族氮化物半导体器件还包括形成在第二硅本体（16）之上的以多数电荷载流子传导型为特征的III族氮化物半导体本体（12）。第二硅体（16）具有与多数电荷载流子导电类型相反的导电类型。在一个实施例中，高电压耐久性III族氮化物半导体器件是高电子迁移率晶体管（HEMT），其包括包含<100>硅层（14）的支撑衬底（10），<100 >硅层（14）以及绝缘层上的P型导电<111>硅层（16）。高电压耐久性HEMT还包括在P型导电<111>硅层（16）上形成的III族氮化物半导体主体（12），III族氮化物半导体主体（12）形成HEMT的异质结。

44. 发明公开

EP1969634A4 VERTICAL DMOS DEVICE IN INTEGRATED CIRCUIT 无效转让
标题翻译：垂直DMOS安排在集成电路
公开(公告)号：EP1969634A4
公开(公告)日：2011-04-20
申请号：EP06848295
申请日：2006-12-29
申请人： INT RECTIFIER CORP
发明人： HAASE ROBERT PAUL
IPC分类号： H01L29/78 , H01L21/336 , H01L27/12
CPC分类号： H01L29/66712 , H01L27/1203 , H01L29/41741 , H01L29/7812 , H01L2924/0002 , H01L2924/10158 , H01L2924/00
摘要： An integrated circuit that includes at least one vertical conduction DMOS device and other semiconductor devices.

45. 发明授权

EP1757174B1 HIGH CURRENT CHARGE PUMP FOR INTELLIGENT POWER SWITCH DRIVER 失效转让
标题翻译：大功率电荷泵智能型电源开关驱动器
公开(公告)号：EP1757174B1
公开(公告)日：2011-03-16
申请号：EP05750975.4
申请日：2005-05-17
申请人： INTERNATIONAL RECTIFIER CORPORATION
发明人： THEVENET, Kevin, c/o International Rectifier
IPC分类号： H03B1/00 , H03K3/00 , H03K17/082
CPC分类号： H03K17/0822 , H02M3/07 , H03K17/063
摘要： A current limiting driver circuit for a semiconductor power switch (24) and a switching device (26) including same The driver circuit includes a sensing circuit (30) for providing a signal representing the current flowing through the semiconductor power switch, a driver circuit (20) for the power switch, a driver circuit (22) for the sensing circuit, and a comparator circuit (28) having a first input provided by an output of the sensing circuit, a second input provided by a reference signal, and an output provided as a signal input for the first and second driver circuits A first charge pump provides the supply voltage (Vcpl) for the driver circuits, and a second charge pump provides the supply voltage (Vcp2) for the comparator, which is higher than the supply voltage for the power switch and the sensing circuit, so that the first and second driver circuits limit the current through the power switch and the sensing circuit even when the output of the sensing circuit approaches the value of the reference signal.

46. 发明公开

EP1972010A4 SUBSTRATE AND METHOD FOR MOUNTING SILICON DEVICE 无效转让
标题翻译：衬底和方法的元件安装SILICON
公开(公告)号：EP1972010A4
公开(公告)日：2009-08-05
申请号：EP07717691
申请日：2007-01-05
申请人： INT RECTIFIER CORP
发明人： HAUENSTEIN HENNING
IPC分类号： H01L23/48
CPC分类号： H01L23/49811 , H01L21/4853 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/39 , H01L24/83 , H01L2224/29111 , H01L2224/32057 , H01L2224/32503 , H01L2224/73153 , H01L2224/83101 , H01L2224/8314 , H01L2224/83192 , H01L2224/83385 , H01L2224/83801 , H01L2224/8381 , H01L2924/0001 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15153 , H01L2924/15165 , H01L2924/15747 , H01L2924/18301 , H01L2924/30107 , H01L2924/00 , H01L2924/00015 , H01L2224/29099
摘要： A substrate on which a silicon device is mounted in accordance with an embodiment of the present invention includes a plurality of protrusions extending upward from a top surface of the substrate and a solder layer formed on the top of the substrate such that the plurality of protrusions extends through the solder layer and a top portion of each protrusion of the plurality of protrusions is stamped down to be level with a top surface of the solder layer such that the silicon device is supported on the plurality of protrusions when placed on the substrate. The protrusions are preferably gouged up from the surface of the substrate with a needle like tool. A stamper tool is used to stamp the protrusions down to their desired height such that they are properly positioned to support the silicon device. The solder layer may be a solder pre-form or may be a layer of solder paste. The solder layer is heated to form liquid solder to bond the substrate and the silicon device, however, the protrusions support the silicon device to prevent movement thereof when the solder is in liquid form.

47. 发明公开

EP1757174A4 HIGH CURRENT CHARGE PUMP FOR INTELLIGENT POWER SWITCH DRIVER 失效转让
标题翻译： HOCHSTROM-LADUNGSPUMPEFÜRINTELLIGENTEN LEISTUNGSSCHTERTERTREIBER
公开(公告)号：EP1757174A4
公开(公告)日：2007-12-05
申请号：EP05750975
申请日：2005-05-17
申请人： INT RECTIFIER CORP
发明人： THEVENET KEVIN
IPC分类号： H03B1/00 , H03K3/00 , H03K17/06 , H03K17/082 , H05K1/11 , H05K1/16
CPC分类号： H03K17/0822 , H02M3/07 , H03K17/063
摘要： A current limiting driver circuit for a semiconductor power switch (24) and a switching device (26) including same The driver circuit includes a sensing circuit (30) for providing a signal representing the current flowing through the semiconductor power switch, a driver circuit (20) for the power switch, a driver circuit (22) for the sensing circuit, and a comparator circuit (28) having a first input provided by an output of the sensing circuit, a second input provided by a reference signal, and an output provided as a signal input for the first and second driver circuits A first charge pump provides the supply voltage (Vcpl) for the driver circuits, and a second charge pump provides the supply voltage (Vcp2) for the comparator, which is higher than the supply voltage for the power switch and the sensing circuit, so that the first and second driver circuits limit the current through the power switch and the sensing circuit even when the output of the sensing circuit approaches the value of the reference signal.
摘要翻译：一种用于半导体功率开关（24）的限流驱动器电路以及包括其的开关器件（26）。该驱动器电路包括用于提供表示流过半导体功率开关的电流的信号的感测电路（30），驱动器电路 20），用于所述感测电路的驱动器电路（22）以及比较器电路（28），所述比较器电路具有由所述感测电路的输出提供的第一输入，由参考信号提供的第二输入和输出提供作为第一和第二驱动器电路的信号输入。第一电荷泵为驱动器电路提供电源电压（Vcpl），并且第二电荷泵为比较器提供高于电源的电源电压（Vcp2）电压，使得即使当感测电路的输出接近值时，第一驱动器电路和第二驱动器电路也限制通过功率开关和感测电路的电流 e参考信号。

48. 发明授权

EP3343638B1 CONTROLLED RESISTANCE INTEGRATED SNUBBER FOR POWER SWITCHING DEVICE 有权
公开(公告)号：EP3343638B1
公开(公告)日：2023-06-21
申请号：EP17210189.1
申请日：2017-12-22
发明人： Burke, Hugo , Kelkar, Kapil , Ma, Ling
IPC分类号： H01L29/78 , H01L21/336

49. 发明授权

EP3007223B1 POWER CONVERTER PACKAGE WITH INTEGRATED OUTPUT INDUCTOR 有权转让
公开(公告)号：EP3007223B1
公开(公告)日：2021-11-10
申请号：EP15185987.3
申请日：2015-09-21
发明人： Cho, Eung San , Clavette, Dan
IPC分类号： H01L23/495 , H01L23/66 , H02M1/00

50. 发明授权

EP2779228B1 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values 有权转让
公开(公告)号：EP2779228B1
公开(公告)日：2020-09-16
申请号：EP14156513.5
申请日：2014-02-25
申请人： Infineon Technologies Americas Corp.
发明人： Fernando, Dean , Barbosa, Roel
IPC分类号： H01L23/34

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