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41. 发明授权

EP1970713B1 ACCELERATION MEASURING DEVICE 有权
标题翻译：加速度测量装置
公开(公告)号：EP1970713B1
公开(公告)日：2013-03-27
申请号：EP06843397.8
申请日：2006-12-27
申请人： Asahi Kasei EMD Corporation
发明人： KITAMURA, Toru , YAMASHITA, Masaya
IPC分类号： G01P21/00 , G01P15/18
CPC分类号： G01P21/00 , G01P15/18

42. 发明授权

EP1788396B1 ACCELERATION MEASURING DEVICE 有权
标题翻译：加速度测量装置
公开(公告)号：EP1788396B1
公开(公告)日：2013-03-20
申请号：EP05780257.1
申请日：2005-08-12
申请人： Asahi Kasei EMD Corporation
发明人： YAMADA, Rikita , HIKIDA, Koichi , SASAKI, Hiroyuki , YAMASHITA, Masaya
IPC分类号： G01P15/00 , G01P21/00 , G01P15/12 , G01P15/18
CPC分类号： G01P15/18 , G01P15/123 , G01P21/00 , G01P2015/084
摘要： The present invention relates to an acceleration measuring device capable of acquiring the offset or both of the sensitivity and the offset necessary for correcting the output of a triaxial acceleration sensor. The invention is provided with an acceleration sensor 1 for detecting the acceleration in a triaxial direction, a data acquisition portion 5A for acquiring the triaxial output data, a data selecting portion 13 for judging whether repeatedly acquired triaxial output data are appropriate to make a selection, a data accumulating portion 14 for accumulating the thus selected triaxial output data, a reference point estimating portion 15 estimating coordinate values of the reference point determined in the three-dimensional cartesian space by referring to the distribution of a predetermined number of accumulated triaxial output data in a three-dimensional cartesian space when each axial component is given as a coordinate value, and an offset correction/calculation portion 17 for correcting the offset of the triaxial output data of the acceleration sensor 1 on the basis of coordinate values of the reference point.

43. 发明公开

EP1736853A3 Key sheet for a pointing device and pointing device 审中-公开
标题翻译：指点设备和定位设备键盘
公开(公告)号：EP1736853A3
公开(公告)日：2013-01-09
申请号：EP06010804.0
申请日：2006-05-26
申请人： Asahi Kasei EMD Corporation , POLYMATECH CO., LTD.
发明人： Takatsuka, Toshinori , Honmatsu, Yoshifumi, R&D Center of Polyamec Co Ltd
IPC分类号： G06F3/033
CPC分类号： G06F3/03548
摘要： Disclosed are a key sheet for a pointing device and a pointing device using a magnet compact in terms of both magnetic force and size to allow a reduction in thickness. Between a pusher (14f) opposed to a contact input portion (E) of a board (P) and a magnet (11) fixed to a base sheet (14) at an outside position around the pusher (14f) as a center so as to be away from a key top (15), there is provided an elastic flexible portion (14d) allowing displacement in a depressing direction through depression of the key top (15) toward the contact input portion (E). As a result, it is possible to perform depressing operation on the key top (15), with the magnet (11) being provided on the base sheet (14), making it possible to perform switch input, such as confirmation input.

44. 发明授权

EP1643212B1 AZIMUTH MEASUREMENT DEVICE AND AZIMUTH MEASUREMENT METHOD 有权
标题翻译：方位测量装置和方位测量方法
公开(公告)号：EP1643212B1
公开(公告)日：2011-04-06
申请号：EP04746793.1
申请日：2004-07-01
申请人： Asahi Kasei EMD Corporation
发明人： KITAMURA, Toru , SATO, Masanobu , YAMASHITA, Masaya , MIKOSHIBA, Norihiko
IPC分类号： G01C17/28 , G01C21/08
CPC分类号： G01C17/28 , G01C17/38
摘要： There are provided an azimuth measurement device and its method for realizing an update of an offset calculated from the data acquired by azimuth measurement. A geomagnetism output measured by a 3-axis magnetic sensor (10) is amplified by an amplification section (13) and input to an A/D conversion section (14). A chopper section (11) is arranged for switching the terminals for driving an X-axis magnetic sensor (2), a Y-axis magnetic sensor (3), and a Z-axis magnetic sensor (4) and applies drive voltage output from a drive power source section (12) to the X-axis magnetic sensor (2), the Y-axis magnetic sensor (3), and the Z-axis magnetic sensor (4). The output amplified value amplified by the amplification section (13) is converted from an analog signal to a digital signal by the A/D conversion section (14) and then is input to a sensitivity/offset correction calculation section (16). Output data from this sensitivity/offset correction calculation section (16) is input to an azimuth calculation section (20) and the corresponding azimuth information is output. A reliability information calculation section (19) outputs reliability information.

45. 发明公开

EP2190006A1 COMPOUND SEMICONDUCTOR SUBSTRATE, PROCESS FOR PRODUCING COMPOUND SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：复合半导体衬底及其制造方法半导体衬底和半导体元件
公开(公告)号：EP2190006A1
公开(公告)日：2010-05-26
申请号：EP08830273.2
申请日：2008-09-12
申请人： Asahi Kasei EMD Corporation
发明人： SHIBATA, Yoshihiko , MIYAHARA, Masatoshi , IKEDA, Takashi , KUNIMI, Yoshihisa
IPC分类号： H01L21/203 , C30B29/40 , H01L21/205 , H01L29/26 , H01L43/06
CPC分类号： H01L29/267 , C30B25/18 , C30B29/40 , H01L21/02381 , H01L21/02546 , H01L21/02658 , H01L43/065
摘要： The present invention relates to a compound semiconductor substrate having a reduced dislocation (defect) density at an interface between a Si substrate and a compound semiconductor layer, and a method for producing the compound semiconductor substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate were removed by subjecting the Si substrate sequentially to organic washing, acid washing and alkaline washing, whereby a flat oxide film (not shown) was formed (S31). The oxide film on the surface was removed by using an aqueous hydrogen fluoride solution having a concentration of 1.0% by weight, whereby hydrogen termination treatment was performed (S32). The Si substrate immediately after being subjected to the hydrogen termination treatment was placed in a vacuum apparatus, and then the temperature of the Si substrate was raised in a vacuum apparatus (S33). If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen was released, pre-irradiation with As was performed (S34). Thus, an interface between the Si substrate and the compound semiconductor layer was prepared. Several minutes later, irradiation with Ga and As was performed (S35). Thereby, the compound semiconductor was formed (S36).
摘要翻译：本发明涉及具有降低的位错（缺陷），在以Si衬底和化合物半导体层，以及用于制备化合物半导体衬底的方法之间的界面密度的化合物半导体衬底。污染物,:如有机物和金属，硅衬底的表面上，通过对所述Si衬底顺序地将形成有机洗涤，酸洗涤和碱洗涤，由此平坦氧化物成膜（未示出）（S31）除去。所述氧化膜的表面，其通过在wässrige氟化氢溶液具有1.0％的浓度，由此氢终端处理什么执行的（S32），使用重量除去。所述Si在经受氢封端处理中的真空装置什么放置，然后其在真空装置（S33）所提出的Si衬底的温度后，立即基板。如果基板温度没有任何手术升高时，终止氢气被释放。其释放，预照射如何执行的（S34）中的氢之前。因此，在Si衬底和其中制备的化合物半导体层之间的接口。几分钟后，照射Ga和作为演出什么（S35）。由此，化合物半导体所形成（S36）。

46. 发明公开

EP2131205A1 MAGNETIC SENSOR AND ITS SENSITIVITY MEASURING METHOD 有权
标题翻译： MAGNETSENSOR UNDSENSITIVITÄTSMESSVERFAHREN
公开(公告)号：EP2131205A1
公开(公告)日：2009-12-09
申请号：EP08722634.6
申请日：2008-03-21
申请人： Asahi Kasei EMD Corporation
发明人： YAMASHITA, Masaya , YAMAGATA, Yo
IPC分类号： G01R33/07 , G01R33/02 , G01R35/00
CPC分类号： G01R33/07 , G01R33/0206 , G01R35/005
摘要： The present invention relates to a magnetic sensor with a sensitivity measuring function and a sensitivity measuring device and a method thereof having a magnetic substance on a semiconductor substrate provided with a plurality of Hall elements. Magnetic sensitivity surfaces (31) detect flux density, and a switching unit (32) extracts magnetic field intensity information of each axis, and inputs it to a sensitivity calculating unit (34) via an amplifier unit (33). The sensitivity calculating unit (34) calculates the sensitivity from the magnetic field intensity information about the individual axes from the magnetic sensitivity surfaces (31). The sensitivity calculating unit includes an axial component analyzing unit (34a) for analyzing the flux density from the magnetic sensitivity surfaces (31) into magnetic components of the individual axes; a sensitivity decision unit (34b) for deciding the sensitivity by comparing the individual axial components of the magnetic field intensity from the axial component analyzing unit (34a) with a reference value; and a sensitivity correction unit (34c) for carrying out sensitivity correction in accordance with the sensitivity information from the sensitivity decision unit (34b). A sensor diagnostic unit (39) carries out self-diagnosis of the validity of the sensitivity of the magnetic sensor according to the sensitivity information, and performs self-sensitivity correction (adjustment).
摘要翻译：本发明涉及具有灵敏度测量功能的磁传感器和灵敏度测量装置及其在具有多个霍尔元件的半导体衬底上具有磁性物质的方法。磁敏表面（31）检测通量密度，切换单元（32）提取每个轴的磁场强度信息，并通过放大单元（33）将其输入到灵敏度计算单元（34）。灵敏度计算单元（34）根据来自磁敏感表面（31）的关于各个轴的磁场强度信息计算灵敏度。灵敏度计算单元包括：轴分量分析单元，用于将从磁敏感表面（31）的磁通密度分析成各轴的磁分量; 用于通过将来自轴分量分析单元（34a）的磁场强度的各个轴向分量与参考值进行比较来确定灵敏度的灵敏度判定单元（34b）以及用于根据来自灵敏度判定单元（34b）的灵敏度信息执行灵敏度校正的灵敏度校正单元（34c）。传感器诊断单元（39）根据灵敏度信息进行磁传感器的灵敏度的有效性的自我诊断，进行自敏感校正（调整）。

47. 发明公开

EP2023398A2 Infrared sensor IC, and infrared sensor and manufacturing method thereof 有权
标题翻译： Infrarotsensor-IC und Infrarotsensor und Herstellungsverfahrendafür
公开(公告)号：EP2023398A2
公开(公告)日：2009-02-11
申请号：EP08019935.9
申请日：2004-09-09
申请人： Asahi Kasei EMD Corporation
发明人： Ueno, Koichiro , Kuze, Naohiro , Moriyasu, Yoshitaka , Nagase, Kazuhiro
IPC分类号： H01L31/0352
CPC分类号： H01L31/035236 , B82Y20/00 , G01J1/02 , G01J1/0204 , G01J5/02 , G01J5/0215 , G01J5/04 , G01J5/045 , G01J5/20 , G01J2001/0276 , H01L31/1035 , H01L2224/48137 , H01L2224/48145 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.
摘要翻译：提供一种非常小且不易受电磁噪声和热波动影响的红外线传感器IC和红外线传感器及其制造方法。传感器（2）使用具有小的器件电阻和大的电子迁移率的化合物半导体，然后，化合物半导体传感器（2）和处理化合物输出的电信号的集成电路（3）半导体传感器（2）并执行操作，使用混合形式布置在单个封装中。以这种方式，可以通过不是常规产生的微型和简单的包装来提供可以在室温下操作的红外线传感器IC。

48. 发明公开

EP2006700A2 MAGNETIC SENSOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译： VERFAHREN ZU SEINER HERSTELLUNG的MAGNETSENSOR
公开(公告)号：EP2006700A2
公开(公告)日：2008-12-24
申请号：EP07740148.7
申请日：2007-03-28
申请人： Asahi Kasei EMD Corporation
发明人： KATAOKA, Makoto , KAKUTA, Katsumi , YAMAGATA, Yo , KANAYAMA, Yuichi
IPC分类号： G01R33/07 , H01L43/06
CPC分类号： G01R33/07 , G01R33/0011 , H01L27/22 , H01L43/06
摘要： The present invention relates to a magnetic sensor with which magnetic characteristics are made extremely stable by consideration of an area of contact of a base layer of a magnetic substance and a semiconductor substrate. On a semiconductor substrate (111) a plurality of Hall elements (112a, 112b) are embedded so as to be coplanar to a top surface of the semiconductor substrate while being mutually spaced apart by a predetermined distance, and above the Hall elements and the semiconductor substrate, a base layer (114), having coefficient of thermal expansion differing from that of the Hall elements and partially covers a region of each Hall elements, is formed via a protective layer (113), and a magnetic flux concentrator (115), having an area larger than the base layer and with magnetic amplification, is formed on the base layer. An area of contact of the base layer of the magnetic substance and the semiconductor substrate is made small to lessen the generation of an offset voltage.
摘要翻译：磁传感器技术领域本发明涉及考虑到磁性物质的基底层与半导体基板的接触面积而使磁特性非常稳定的磁传感器。在半导体衬底（111）上嵌入多个霍尔元件（112a，112b），以便与半导体衬底的顶表面共面一个预定距离相互间隔开，并且在霍尔元件和半导体通过保护层（113）和磁通集中器（115）形成具有与霍尔元件的热膨胀系数不同的部分的基底层（114），并部分地覆盖每个霍尔元件的区域，在基底层上形成具有大于基底层并且具有磁放大的面积的区域。使磁性物质的基底层与半导体基板的接触面积小，以减少偏移电压的产生。

49. 发明公开

EP1867951A1 TRAVELING DIRECTION MEASURING APPARATUS AND TRAVELING DIRECTION MEASURING METHOD 有权
标题翻译： VORRICHTUNG UND VERFAHREN ZUR MESSUNG DER BEWEGUNGSRICHTUNG
公开(公告)号：EP1867951A1
公开(公告)日：2007-12-19
申请号：EP06730227.3
申请日：2006-03-28
申请人： Asahi Kasei EMD Corporation
发明人： KITAMURA, Toru , YAMASHITA, Masaya
IPC分类号： G01C21/10 , G01P13/02 , G01C21/00 , G08G1/005
CPC分类号： A61B5/1112 , A61B5/1126 , A61B2562/0219 , G01C21/20 , G01C22/006 , G01P13/02 , G08G1/005
摘要： The present invention relates to a traveling direction measuring apparatus usable as a pedestrian navigation system in locations where it is difficult to obtain high positioning accuracy such as inside buildings or around multistory buildings where a GPS cannot be used. An acceleration detecting section (1) detects 3-axes acceleration of the traveling direction measuring apparatus, which varies with the walking of the pedestrian. An acceleration data acquiring section (2) obtains 3-axes acceleration data repeatedly by the number of prescribed times or more, said 3-axes acceleration data varies with the walking of the pedestrian. A first gravity acceleration calculating section (3) calculates, when the pedestrian is walking with holding the traveling direction measuring apparatus in a generally fixed attitude, gravity acceleration by averaging acceleration data sets during several steps obtained by the acceleration data acquiring section (2). A first moving direction estimating section (4) estimates the moving direction of the pedestrian from frequency components corresponding to the duration of one step of the acceleration data sets projected on a plane perpendicular to the gravity acceleration calculated by the first gravity acceleration calculating section (3).
摘要翻译：本发明涉及一种在难以获得诸如建筑物内部或不能使用GPS的多层建筑物周围的难以获得高定位精度的位置中的作为行人导航系统的行进方向测量装置。加速度检测部（1）检测随行人行走而变化的行驶方向测定装置的3轴加速度。加速度数据获取部（2）以规定次数以上的次数重复获得3轴加速度数据，所述3轴加速度数据随行人行走而变化。第一重力加速度计算部（3）通过在由加速度数据取得部（2）获得的数个步骤中对加速度数据集进行平均来计算行人通过以大致固定的姿态保持行驶方向测量装置而行走的重力加速度。第一移动方向估计部（4）从与第一重力加速度计算部（3）计算出的重力加速度垂直的平面上投影的加速度数据集的一步的持续时间的频率成分的频率成分估计行人的移动方向）。

50. 发明授权

EP1124271B8 MAGNETIC SENSOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：磁传感器和相关方法
公开(公告)号：EP1124271B8
公开(公告)日：2007-09-19
申请号：EP99935099.4
申请日：1999-08-06
申请人： Asahi Kasei EMD Corporation
发明人： SHIBASAKI, Ichiro , OKAMOTO, Atsushi, Asahi Kasei Dai 5 Fuji-ryo , YOSHIDA, Takashi , OKADA, Ichiro, Asahi Kasei Dai 5 Fuji-ryo
IPC分类号： G01R33/06 , G01R33/07 , G01R33/09 , H01L43/06
CPC分类号： G01R33/09 , G01R33/06 , H01L43/10 , Y10T428/11
摘要： A thin film (2) having a density of electrons of more than 2x10 /cm and having a composition of InxGai-xAsySb1-y (0

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