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31. 发明授权

EP2736080B1 SPIN RECTIFYING DEVICE, SPIN TRANSISTOR, AND SPIN RECTIFYING METHOD 有权
标题翻译： GLEICHRICHTERFÜRSPINS，SPINTRANSISTOR UND GLEICHRICHTEVERFAHRENFÜRSPINS
公开(公告)号：EP2736080B1
公开(公告)日：2017-02-01
申请号：EP12825398.6
申请日：2012-08-21
申请人： Japan Science and Technology Agency
发明人： KOHDA, Makoto , NITTA, Junsaku , KOBAYASHI, Kensuke
IPC分类号： H01L29/66 , H01L29/423 , H01L29/06 , H01L29/82 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L29/778 , H01L29/775
CPC分类号： H01L43/065 , B82Y10/00 , H01F10/00 , H01L27/222 , H01L29/0673 , H01L29/125 , H01L29/205 , H01L29/42356 , H01L29/66984 , H01L29/775 , H01L29/7783 , H01L29/82 , H01L29/861 , H01L43/08 , H01L43/10

32. 发明授权

EP1603168B1 FIELD-EFFECT TRANSISTOR WITH SPIN-DEPENDENT TRANSMISSION CHARACTERISTIC WITH HALF-METAL SOURCE AND DRAIN 有权
标题翻译：与自旋相关传输功能半金属源极和漏极场效应晶体管
公开(公告)号：EP1603168B1
公开(公告)日：2017-01-11
申请号：EP04704734.5
申请日：2004-01-23
申请人： Japan Science and Technology Agency
发明人： Sugahara, Satoshi , Tanaka, Masaaki
IPC分类号： H01L29/66 , H01L29/47 , H01L29/82 , G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L29/47 , B82Y10/00 , G11C11/161 , H01L27/228 , H01L29/66984

33. 发明公开

EP3073532A1 MAGNETORESISTIVE ELEMENT, SPIN MOSFET, MAGNETIC SENSOR, AND MAGNETIC HEAD 有权
标题翻译：磁感应元件，SPIN-MOSFET，MAGNETISCHER SENSOR UND MAGNETKOPF
公开(公告)号：EP3073532A1
公开(公告)日：2016-09-28
申请号：EP14864839.7
申请日：2014-11-14
申请人： TDK Corporation
发明人： SASAKI, Tomoyuki , OIKAWA, Tohru , KOIKE, Hayato
IPC分类号： H01L29/82 , G11B5/39 , H01L29/66
CPC分类号： H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L29/1033 , H01L29/66984 , H01L29/82 , H01L43/02
摘要： Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer (3); a first ferromagnetic layer (12A) disposed on the semiconductor channel layer (3); a second ferromagnetic layer (12B) disposed away from the first ferromagnetic layer (12A); and a non-magnetic first reference electrode (20) disposed away from the first ferromagnetic layer (12A) and the second ferromagnetic layer (12B), wherein current is input from the second ferromagnetic layer (12B) to the first ferromagnetic layer (12A) through the semiconductor channel layer (3), a voltage between the second ferromagnetic layer (12B) and the first reference electrode (20) is output.
摘要翻译：使用半导体的旋转元件具有比常规GMR元件和TMR元件更高的元件电阻的问题，使得难以获得高磁阻比。一种包括半导体沟道层（3）的磁阻元件; 设置在半导体沟道层（3）上的第一铁磁层（12A）; 远离所述第一铁磁层（12A）设置的第二铁磁层（12B）; 以及远离所述第一铁磁层（12A）和所述第二铁磁层（12B）设置的非磁性第一参考电极（20），其中电流从所述第二铁磁层（12B）输入到所述第一铁磁层（12A）通过半导体沟道层（3），输出第二铁磁层（12B）和第一参考电极（20）之间的电压。

34. 发明公开

EP2831881A4 MAGNETIC STATE ELEMENT AND CIRCUITS 审中-公开
标题翻译：莫桑比克在SCHALTUNGEN
公开(公告)号：EP2831881A4
公开(公告)日：2016-04-20
申请号：EP12873104
申请日：2012-03-29
申请人： INTEL CORP
发明人： MANIPATRUNI SASIKANTH , NIKONOV DMITRI E , YOUNG IAN A
IPC分类号： G11C11/15 , G06F1/00 , G11C5/14
CPC分类号： H01L29/66984 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12 , H03K19/16

35. 发明公开

EP2919274A1 SPIN VALVE ELEMENT 有权
标题翻译： DREHVENTILELEMENT
公开(公告)号：EP2919274A1
公开(公告)日：2015-09-16
申请号：EP13853186.8
申请日：2013-10-31
申请人： Japan Science and Technology Agency , The University Of York
发明人： HIROHATA, Atsufumi
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , H01L29/0657 , H01L29/10 , H01L29/66984 , H01L29/68 , H01L29/82
摘要： A spin valve element 10 including a spin injector 12 made of a ferromagnetic material, a spin detector 16 made of a ferromagnetic material, and a channel part 14 made of a non-magnetic material. The spin detector 16 is arranged at a position separated from the spin injector 12, the channel part 14 is connected with the spin injector 12 and the spin detector 16 directly or through an insulating layer, and a plurality of spin diffusion portions 30 to 34 with enlarged cross section areas in a direction perpendicular to a spin current is formed in the channel part 14.
摘要翻译：包括由铁磁材料制成的自旋注入器12的自旋阀元件10，由铁磁材料制成的自旋检测器16和由非磁性材料制成的通道部分14。自旋检测器16配置在与自旋注入器12分离的位置，通道部14直接或通过绝缘层与自旋注入器12和自旋检测器16连接，多个自旋扩散部30〜34与在通道部14中形成有与自旋电流垂直的方向的扩大截面积。

36. 发明授权

EP2596498B1 PROCEDE DE PHOTOCOMMUTATION THERMIQUE DE MATERIAUX A TRANSITION DE SPIN ET APPLICATIONS 有权
标题翻译：方法的SPIN过渡材料及其使用的热PHOTO电路
公开(公告)号：EP2596498B1
公开(公告)日：2014-07-02
申请号：EP11752594.9
申请日：2011-07-20
申请人： Centre National de la Recherche Scientifique
发明人： LETARD, Jean-François , FREYSZ, Eric
IPC分类号： G11B7/249 , B41M5/26 , C07F15/02
CPC分类号： H01L29/66984 , B41M5/26 , B41M5/262 , B41M5/267 , C07D249/08 , G11B7/2492

37. 发明公开

EP2596498A1 PROCEDE DE PHOTOCOMMUTATION THERMIQUE DE MATERIAUX A TRANSITION DE SPIN ET APPLICATIONS 有权
标题翻译：方法的SPIN过渡材料及其使用的热PHOTO电路
公开(公告)号：EP2596498A1
公开(公告)日：2013-05-29
申请号：EP11752594.9
申请日：2011-07-20
申请人： Centre National de la Recherche Scientifique
发明人： LETARD, Jean-François , FREYSZ, Eric
IPC分类号： G11B7/249 , B41M5/26 , C07F15/02
CPC分类号： H01L29/66984 , B41M5/26 , B41M5/262 , B41M5/267 , C07D249/08 , G11B7/2492
摘要： The present invention relates to a method for the thermal photoswitching of spin-transition compounds from the low-spin state to the high-spin state, including at least one step of exposing said material to a non-polarised laser beam which is at room temperature, and the wavelength of which is in the infrared range and the power of which is 1 mW.cm
-2 to 1 W.cm
-2 . The invention also relates to the use of such a method for the temporary or permanent marking of materials including particles of at least one spin-transition compound including an iron(II) and triazole ligand compound.

38. 发明公开

EP2515134A1 NUCLEAR-SPIN POLARIZATION DETECTION DEVICE AND NUCLEAR-SPIN POLARIZATION DETECTION METHOD 审中-公开
标题翻译： VORRICHTUNG ZUR KERNSPINAOLARISIERUNGSDETEKTION UND VERFAHREN ZUR KERNSPOLARISIERUNGSDETEKTION
公开(公告)号：EP2515134A1
公开(公告)日：2012-10-24
申请号：EP10837584.1
申请日：2010-12-14
申请人： Japan Science and Technology Agency
发明人： LIU, Hongwu , YANG, Kaifeng , HIRAYAMA, Yoshiro
IPC分类号： G01R33/30 , G01N24/00
CPC分类号： G01R33/323 , B82Y10/00 , G01N24/08 , G01R33/307 , H01L29/66984
摘要： Provided is a total electrical nuclear-spin polarization device that is applicable to many narrow-gap semiconductor two-dimensional quantum structures such as InSb with a large g-factor and with a mobility having a normal value. A nuclear-spin polarization device 1 creates a state where the Landau-level separation and the Zeeman-level separation in a sample are equal to each other in a magnetic field, thereby crossing different spin states, and detects nuclear-spin polarization from a resistance change at the crossing point caused by the nuclear-spin polarization.
摘要翻译：提供了一种适用于许多窄间隙半导体二维量子结构（如具有大g因子的InSb和具有正常值的迁移率）的电气核 - 自旋极化装置。核自旋极化装置1产生样品中的Landau级别分离和塞曼级分离在磁场中彼此相等的状态，从而穿过不同的自旋态，并从电阻中检测核 - 自旋极化在由自旋极化引起的交叉点处的变化。

39. 发明公开

EP2208231A4 SPIN TRANSISTOR AND METHOD OF OPERATING THE SAME 有权转让
标题翻译：自旋晶体管及其制造方法
公开(公告)号：EP2208231A4
公开(公告)日：2011-12-28
申请号：EP08848274
申请日：2008-11-04
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： HONG KI-HA , LEE SUNG-HOON , KIM JONG-SEOB , SHIN JAI-KWANG
IPC分类号： H01L29/78 , H01L29/82
CPC分类号： H01L29/66984 , B82Y25/00 , H01F1/401 , H01F1/404 , H01F10/1933 , H01F10/1936 , H01F10/3254 , H01F10/3295 , H01L29/82
摘要： A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3 (A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

40. 发明公开

EP2248157A1 CONTROL AND READOUT OF ELECTRON OR HOLE SPIN 有权转让
标题翻译： CONTROL与阅读电子或空穴SPINN
公开(公告)号：EP2248157A1
公开(公告)日：2010-11-10
申请号：EP09709809.9
申请日：2009-02-11
申请人： Qucor Pty Ltd
发明人： MORELLO, Andrea , DZURAK, Andrew, Steven , HUEBL, Hans-Gregor , CLARK, Robert, Graham , WILLEMS VAN BEVEREN, Laurens, Henry , HOLLENBERG, Lloyd, Christopher, Leonard , JAMIESON, David, Norman , ESCOTT, Christopher
IPC分类号： H01L21/335 , G06N1/00 , G01N24/10 , H01L21/8238
CPC分类号： G01N24/10 , B82Y10/00 , G06N10/00 , H01L29/66984 , H01L29/7613
摘要： This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.

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