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    • 34. 发明公开
    • DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE
    • 金刚石电子发射阴极,电子发射源,电子显微镜和电子束曝光装置
    • EP1892741A1
    • 2008-02-27
    • EP06766923.4
    • 2006-06-19
    • Sumitomo Electric Industries, Ltd.
    • Nishibayashi, Y., Sumitomo Electric Ind., Ltd.Ueda, A., Sumitomo Electric Industries, Ltd.Yamamoto, Y., Sumitomo Electric Industries, Ltd.Imai, Takahiro, Sumitomo Electric Industries, Ltd.
    • H01J1/15H01J37/06H01J37/305
    • H01J1/15H01J1/14H01J37/06H01J2237/06308H01J2237/06316
    • An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are used in electron beam and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and electronic devices that uses such electron emission cathode and electron emission source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode being in a columnar form having a sharpened acute section in one place of an electron emitting portion and being constituted by at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is a n-type semiconductor comprising n-type impurities at 2 × 10 15 cm -3 or higher, the other type is a p-type semiconductor comprising p-type impurities at 2 × 10 15 cm -3 or higher, the p-type semiconductor and the n-type semiconductor are joined, an electric potential that is negative with respect to the p-type semiconductor is applied with a pair of current introducing terminals to the n-type semiconductor so that electrons flow from the n-type semiconductor to the p-type semiconductor, and the n-type semiconductor has a component in which electrons flow to the electron emitting portion.
    • 本发明的一个目的是提供一种使用金刚石并具有高亮度和小能量宽度的电子发射阴极和电子发射源,其用于电子束和电子束装置以及真空管,特别是电子显微镜和 电子束曝光装置,以及使用这种电子发射阴极和电子发射源的电子装置。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石,该金刚石电子发射阴极为柱状,在电子发射部分的一个位置上具有尖锐的锐截面并且由至少两个 电性能不同的半导体类型。 构成半导体的一种类型是包含2×1015cm-3或更高的n型杂质的n型半导体,另一种是包含2×1015cm-3的p型杂质的p型半导体或 更高,将p型半导体和n型半导体接合,相对于p型半导体为负的电位被施加一对电流引入端子到n型半导体,使得电子从 n型半导体到p型半导体,并且n型半导体具有其中电子流到电子发射部分的分量。