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31. 发明公开

EP1143537A1 MAGNETORESISTANCE EFFECT MEMORY DEVICE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： MAGNETOWIDERSTANDSEFFEKT-BASIERTES SPEICHERBAUEMENT UND DESSEN HERSTELLUNGSVERFAHREN
公开(公告)号：EP1143537A1
公开(公告)日：2001-10-10
申请号：EP00962836.3
申请日：2000-09-25
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： ODAGAWA, Akihiro , HIRAMOTO, Masayoshi , MATSUKAWA, Nozomu , ADACHI, Hideaki , SAKAKIMA, Hiroshi
IPC分类号： H01L43/08 , H01L43/12 , G11C11/15 , H01L27/105
CPC分类号： H01L43/12 , G11C11/15 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01L27/222 , H01L43/08
摘要： A magneto-resistive effect memory element according to the present invention includes a first ferromagnetic film; a second ferromagnetic film; a first nonmagnetic film provided between the first ferromagnetic film and the second ferromagnetic film; a first conductive film for generating a magnetic field for causing magnetization inversion in at least one of the first ferromagnetic film and the second ferromagnetic film, the first conductive film not being electrically in contact with the first ferromagnetic film or the second ferromagnetic film; and a second conductive film and a third conductive film for supplying an electric current to the first ferromagnetic film, the first nonmagnetic film, and the second ferromagnetic film. The first ferromagnetic film and the second ferromagnetic film have different magnetization inversion characteristics with respect to the magnetic field, and the first nonmagnetic film contains at least a nitride.
摘要翻译：根据本发明的磁阻效应存储元件包括第一铁磁膜; 第二铁磁膜; 设置在所述第一铁磁膜和所述第二铁磁膜之间的第一非磁性膜; 第一导电膜，用于产生用于在所述第一铁磁膜和所述第二铁磁膜中的至少一个中引起磁化反转的磁场，所述第一导电膜不与所述第一铁磁膜或所述第二铁磁膜电接触; 以及用于向第一铁磁膜，第一非磁性膜和第二铁磁性膜提供电流的第二导电膜和第三导电膜。第一铁磁膜和第二铁磁膜相对于磁场具有不同的磁化反转特性，并且第一非磁性膜含有至少一种氮化物。

32. 发明公开

EP1061592A3 Magneto-resistance effect element, and its use as memory element 审中-公开
标题翻译： Magnetoresistives Element，und seine Verwendung als Speicherelement
公开(公告)号：EP1061592A3
公开(公告)日：2001-09-26
申请号：EP00112886.7
申请日：2000-06-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Odagawa, Akihiro , Sakakima, Hiroshi , Hiramoto, Masayoshi , Matsukawa, Nozomu
IPC分类号： H01L43/08 , H01F10/32 , G11C11/16
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
摘要翻译：磁阻效应元件包括第一铁磁膜; 第二铁磁膜; 以及介于所述第一铁磁膜和所述第二铁磁膜之间的第一非磁性膜。第一铁磁膜的磁化比通过外部磁场的第二铁磁性膜的磁化更容易旋转。第一铁磁膜具有约2nm或更小的有效磁性厚度。

33. 发明公开

EP1132919A2 Memory cell 有权
标题翻译：记忆细胞
公开(公告)号：EP1132919A2
公开(公告)日：2001-09-12
申请号：EP01301747.0
申请日：2001-02-26
申请人： Hewlett-Packard Company
发明人： Bhattacharyya, Manoj K.
IPC分类号： G11C11/16 , G11C11/56
CPC分类号： H01L43/08 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616
摘要： A multibit magnetic memory cell (400) includes first (410) and second (470) data layers. An antiferromagnetically coupled layer pair (430, 450) is disposed between the first and second data layers. In one embodiment the first and second data layers have distinct coercivities. The memory cell structure comprises a plurality of separation layers (420, 460) separating the first and second data layers and the antiferromagnetically coupled layer pair. In one embodiment, a coupling layer (440) disposed between the antiferromagnetically coupled layer pair is a metallic conductive material comprising Ruthenium (Ru) or copper (Cu). In one embodiment, separation layers (420, 460) disposed between each of the first and second data layers and the antiferromagnetically coupled pair are nonconductive such that the cell is a spin dependent tunneling magnetoresistive (TMR) cell. Alternatively, the separation layers (420, 460) are conductive such that the cell is a giant magnetoresistive (GMR) cell.
摘要翻译：多位磁存储单元（400）包括第一（410）和第二（470）数据层。反铁磁耦合层对（430,450）设置在第一和第二数据层之间。在一个实施例中，第一和第二数据层具有不同的矫顽力。存储器单元结构包括分隔第一和第二数据层以及反铁磁耦合层对的多个分离层（420,460）。在一个实施例中，设置在反铁磁耦合层对之间的耦合层（440）是包含钌（Ru）或铜（Cu）的金属导电材料。在一个实施例中，设置在第一数据层和第二数据层中的每一个与反铁磁耦合对之间的分离层（420,460）是非导电的，使得单元是自旋相关隧穿磁阻（TMR）单元。或者，分离层（420,460）是导电的，使得该单元是巨磁阻（GMR）单元。

34. 发明公开

EP0971424A2 Spin-valve structure and method for making spin-valve structures 审中-公开
标题翻译：旋转阀Struktur和Herstellungsverfahren
公开(公告)号：EP0971424A2
公开(公告)日：2000-01-12
申请号：EP99870144.5
申请日：1999-07-07
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , K.U. LEUVEN RESEARCH & DEVELOPMENT VZW
发明人： Attenborough, Karen , Boeve, Hans , De Boeck, Jo , Celis, Jean-Pierre
IPC分类号： H01L43/12 , H01L43/08 , G01R33/09 , G11C11/15
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3268 , H01L43/08 , H01L43/12
摘要： The present invention concerns in a first aspect a spin-valve structure comprising a first and a second free ferromagnetic layer and a spacer layer positioned between said first and second free ferromagnetic layer, and wherein said first free ferromagnetic layer is positioned on a substrate. In a preferred embodiment of the invention, said first free ferromagnetic layer is in direct contact with the surface of said substrate.
摘要翻译：本发明在第一方面涉及一种自旋阀结构，其包括第一和第二自由铁磁层和位于所述第一和第二自由铁磁层之间的间隔层，并且其中所述第一自由铁磁层位于衬底上。在本发明的优选实施例中，所述第一自由铁磁层与所述衬底的表面直接接触。

35. 发明公开

EP0962939A1 Magnetic memory cell 有权
标题翻译： Magnetische Speicherzelle
公开(公告)号：EP0962939A1
公开(公告)日：1999-12-08
申请号：EP99304212.6
申请日：1999-05-28
申请人： Hewlett-Packard Company
发明人： Brug, James A. , Bhatacharyya
IPC分类号： G11C11/56
CPC分类号： G11C11/15 , G11C11/5607 , G11C2211/5615
摘要： A magnetic memory cell (40) includes data storage layer (50) having a shape which is preselected to provide at least three domain states wherein each domain state corresponds to a particular logic state and a particular orientation of magnetization in the data storage layer. The magnetic memory cell includes a reference layer (54) having a fixed orientation of magnetization which is defined by an angle of orientation (θ) wherein the angle of orientation (θ) is preselected to distinguish the domain states of the data storage layer (50).
摘要翻译：磁存储单元（40）包括数据存储层（50），其具有预选的形状以提供至少三个域状态，其中每个域状态对应于数据存储层中的特定逻辑状态和特定取向。磁存储单元包括具有固定取向的参考层（54），该取向由取向角（“θ”）定义，其中预先选择取向角（＆amp; thetas）以区分数据存储层的域状态（50）。

36. 发明公开

EP0877398A3 Magnetic element and magnetic head and magnetic memory device using thereof 失效
标题翻译：磁性元件及磁头及使用其的磁性记忆装置
公开(公告)号：EP0877398A3
公开(公告)日：1998-12-23
申请号：EP98303594.0
申请日：1998-05-07
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Inomata, Koichiro , Saito, Yoshiaki , Ichihara, Katsutaro , Yusu, Keiichiro , Ogiwara, Hideo
IPC分类号： H01F10/08 , G11B5/39 , G11C11/16
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , H01F10/3227 , H01F10/3254 , H01L43/08 , Y10S428/90 , Y10T428/1114 , Y10T428/12111
摘要： A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.
摘要翻译：磁性元件包括粒状磁性膜和铁磁性膜，所述粒状磁性膜具有分散在介电基质中的铁磁性微粒并且不显示超顺磁性并且还具有有限的矫顽力。颗粒磁性膜和铁磁膜沿着基板的一个表面堆叠或排列，并构成铁磁隧道结膜。在铁磁隧道结膜中，粒状磁性膜起到阻挡层的作用。在粒状磁性膜和铁磁性膜中，通过外部磁场改变一个铁磁性膜的旋转方向，表现出巨大的磁阻效应。这种磁性元件的特征在于磁阻变化率大，饱和磁场小，元件的电阻可以控制在适当的值，性能变化小且稳定。

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