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    • 28. 发明公开
    • Superconducting tunnel junction devices and method of making them
    • 超导组件与隧道势垒层和它们的制备方法。
    • EP0109166A2
    • 1984-05-23
    • EP83306047.8
    • 1983-10-06
    • SPERRY CORPORATION
    • Kroger, Harry
    • H01L39/22H01L39/24
    • H01L39/22Y10S505/874
    • A superconducting tunnel junction device comprises superconducting electrodes 11 and 12 separated by a tunnelling barrier 10 of semiconducting material.
      According to the invention the tunnelling barrier is not uniform throughout its thickness, the middle portion 14 being treated to reduce the density of localized states, whereas the portions 15 adjacent to the superconducting electrodes are of untreated semiconductor. This enables a device of improved performance to be obtained.
      In the preferred embodiment described in the specification the superconducting electrodes 11 and 12 are of niobium and the treated portion 14 of the barrier layer is of amorphous silicon containing hydrogen, the untreated portions 15 being of pure amorphous silicon. Various other superconducting materials for the electrodes and semiconductors for the barriers are mentioned, together with other gaseous additives. The devices may be manufactured by deposition steps in vacuum and in inert gas at low pressures.
    • 具有超导电极的超导隧道结装置具有当中心区域以气态气氛包含氢的存在下沉积的无定形半导体材料,worin的非均匀阻挡层中的中心区域有获取局域化能态的密度降低 阻挡,以便最小化泄漏电流,在近似于理想的隧道结器件改进的电流 - 电压特性所得的。 低泄漏电流提高使用均匀地沉积氢化硅与铌电极在隧穿势垒的约瑟夫逊逻辑电路的空间,并增加S-I-S微波和毫米波长度检测器和混频器的灵敏度。 在优选实施方案,铌的超导电极是连体使用纯硅邻接电极和氢化非晶硅的芯三层屏障。 优点的VM参数高达28毫伏4.2K时(subgap电阻和临界电流的产品)在该实施方式得到,用10毫伏现有技术相比。