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21. 发明公开

EP2388814A3 Electronic device and manufacturing method therefor 有权
标题翻译：电子装置及其制造方法
公开(公告)号：EP2388814A3
公开(公告)日：2014-04-23
申请号：EP11250541.7
申请日：2011-05-20
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Sekine, Yurina , Kuwana, Yoshiharu
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/481 , H01L21/76898 , H01L2224/13 , H01L2224/16146 , H01L2224/81 , H01L2924/09701 , H01L2924/13091 , H01L2924/1461 , H01L2924/00
摘要： An electronic device includes a semiconductor substrate, an insulating material-filled layer (3) and a vertical conductor (2). The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 10 14 Ω • cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.
摘要翻译：一种电子器件包括半导体衬底，绝缘材料填充层（3）和垂直导体（2）。半导体衬底具有沿其厚度方向延伸的垂直孔。绝缘材料填充层是填充在垂直孔中以覆盖其内周的环形层并且包括主要由玻璃和纳米复合陶瓷组成的有机绝缘材料或无机绝缘材料。纳米复合陶瓷在室温下的电阻率大于1014Ω·cm，相对介电常数为4至9.垂直导体是填充在由绝缘材料填充层包围的区域中的凝固金属体。

22. 发明公开

EP2642492A1 Conductive fine powder, conductive paste and electronic component 审中-公开
标题翻译： Leitfähiges，feines Pulver，leitfähigePaste und elektronischesGerät
公开(公告)号：EP2642492A1
公开(公告)日：2013-09-25
申请号：EP13275071.2
申请日：2013-03-19
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Sekine, Yurina
IPC分类号： H01B1/22 , H01G4/12
CPC分类号： H01G4/008 , B22F1/0018 , B22F1/0059 , B22F1/0081 , B22F9/082 , B22F2001/0033 , B22F2009/084 , B22F2009/0888 , B22F2999/00 , B82Y30/00 , H01B1/22 , H01G4/0085 , H01G4/12 , H01G4/30 , B22F9/10 , B22F2202/13
摘要： A conductive fine powder includes flat metal/alloy fine particles. The flat metal/alloy fine particles have a nanocomposite structure in which crystalline or non-crystalline nanoparticles are mixed or formed in a matrix. The flat metal/alloy fine particles have a maximum thickness of 50 nm or less and a maximum diameter at least twice the thickness and contain a high-melting-point metal and a low-melting-point metal.
摘要翻译：导电细粉末包括平坦的金属/合金细颗粒。扁平金属/合金微粒具有纳米复合结构，其中结晶或非结晶纳米颗粒以基体混合或形成。扁平金属/合金微粒的最大厚度为50nm以下，最大直径为厚度的至少两倍，并含有高熔点金属和低熔点金属。

23. 发明公开

EP2388814A2 Electronic device and manufacturing method therefor 有权
标题翻译：及其电子装置及其制造方法
公开(公告)号：EP2388814A2
公开(公告)日：2011-11-23
申请号：EP11250541.7
申请日：2011-05-20
申请人： Napra Co.,Ltd
发明人： Sekine, Shigenobu , Sekine, Yurina , Kuwana, Yoshiharu
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/76898 , H01L2224/13 , H01L2224/16146 , H01L2224/81 , H01L2924/09701 , H01L2924/13091 , H01L2924/1461 , H01L2924/00
摘要： An electronic device includes a semiconductor substrate, an insulating material-filled layer (3) and a vertical conductor (2). The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 10 14 Ω • cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.

24. 发明公开

EP2296198A2 Light-emitting diode, light-emitting device, lighting apparatus, display and signal light 审中-公开
标题翻译： Lichtemittierende Diode，lichtemittierende Vorrichtung，Beleuchtungsvorrichtung，Anzeige und Signallicht
公开(公告)号：EP2296198A2
公开(公告)日：2011-03-16
申请号：EP10250744.9
申请日：2010-04-09
申请人： Napra co.,Ltd
发明人： Sekine, Shigenobu , Sekine, Yurina , Kuwana, Yoshiharu
IPC分类号： H01L33/38
CPC分类号： H01L33/382
摘要： A light-emitting diode includes a substrate, a semiconductive light-emitting layer, and electrodes. The semiconductive light-emitting layer is deposited on one side of the substrate. The electrodes are composed of a conductive material filled in pores leading to the semiconductive light-emitting layer through the substrate. The semiconductive light-emitting layer includes sequentially deposited n-type and p-type semiconductive layers. The electrodes include n-side and p-side electrodes. One of the n-side and p-side electrodes penetrates through one of the n-type and p-type semiconductive layers, which is disposed closer to the substrate but not targeted for connection, and terminates with a tip thereof located within the other semiconductive layer. The other of the n-side and p-side electrodes penetrates through the substrate from the other side opposite to the one side of the substrate and terminates with a tip thereof located within the one semiconductive layer disposed closer to the substrate.
摘要翻译：发光二极管包括基板，半导体发光层和电极。半导体发光层沉积在衬底的一侧上。电极由填充在通过基板通过半导体发光层的孔中的导电材料构成。半导体发光层包括顺序沉积的n型和p型半导体层。电极包括n侧电极和p侧电极。 n侧和p侧电极中的一个穿过n型和p型半导体层中的一个，该n型和p型半导体层设置得更靠近衬底而不是连接的目的，并且其端部位于另一个半导电层内层。 n侧和p侧电极中的另一个从与衬底的一侧相反的另一侧穿透衬底，并且终止于位于靠近衬底设置的一个半导体层内的尖端。

25. 发明授权

EP3266558B1 MULTI-LAYER PREFORM SHEET 有权
公开(公告)号：EP3266558B1
公开(公告)日：2021-05-19
申请号：EP16197691.5
申请日：2016-11-08
发明人： Sekine, Shigenobu , Shimaya, Chihiro
IPC分类号： B23K35/26 , B23K35/30 , C22C9/00 , C22C13/00 , H01L23/532 , H01L23/00 , B32B15/01 , C22C9/02 , H01B1/02 , H01L23/488

26. 发明授权

EP2835822B1 Wiring substrate manufacturing method 有权
公开(公告)号：EP2835822B1
公开(公告)日：2020-09-30
申请号：EP14179882.7
申请日：2014-08-05
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Ikeda, Hiroaki , Sekine, Yurina
IPC分类号： H01L21/768 , H01L23/48

27. 发明授权

EP2835829B1 Method for manufacturing an integrated circuit device 失效
标题翻译：制造集成电路器件的方法
公开(公告)号：EP2835829B1
公开(公告)日：2017-07-19
申请号：EP14179869.4
申请日：2014-08-05
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Sekine, Yurina
IPC分类号： H01L27/06 , H01L21/02 , H01L23/48 , H01L23/522 , H01L49/02
CPC分类号： H01L27/04 , H01L21/02211 , H01L23/481 , H01L23/5223 , H01L27/0676 , H01L28/90 , H01L2924/0002 , H01L2924/00

28. 发明公开

EP2860755A3 Junction, through conductor and metallisation trace comprising a nanocomposite metal diffusion region 审中-公开
标题翻译：通过化合物和Verdrahtungsmetallisierung包括纳米复合金属扩散区
公开(公告)号：EP2860755A3
公开(公告)日：2015-09-02
申请号：EP14275203.9
申请日：2014-09-29
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu
IPC分类号： H01L23/488 , H01L23/485 , H01L23/48 , H01L23/498 , H01B1/02 , B22F1/00 , B23K35/02 , H01B1/16 , H01B1/22
CPC分类号： H01L24/05 , B22F1/0003 , B22F1/0062 , B22F1/025 , B22F7/064 , B22F2999/00 , B23K35/025 , B23K35/262 , B23K35/302 , H01B1/02 , H01B1/16 , H01B1/22 , H01L23/481 , H01L23/49827 , H01L23/49866 , H01L23/53233 , H01L24/29 , H01L24/32 , H01L2224/04026 , H01L2224/04073 , H01L2224/05647 , H01L2224/13147 , H01L2224/13294 , H01L2224/13311 , H01L2224/13313 , H01L2224/13347 , H01L2224/13411 , H01L2224/13447 , H01L2224/1349 , H01L2224/29294 , H01L2224/29311 , H01L2224/29313 , H01L2224/29347 , H01L2224/29411 , H01L2224/29447 , H01L2224/2949 , H01L2224/32507 , H01L2224/81447 , H01L2224/83447 , H01L2225/06544 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/13091 , H01L2924/3656 , H01L2924/00014 , H01L2924/00 , B22F2301/10 , B22F2301/255 , B22F2301/30 , B22F2301/205
摘要： In one embodiment, a junction (1) at which at least two conductors (32, 52) are connected together includes a compound region containing Cu, Sn and at least one element selected from the group consisting of Si, B, Ti, Al, Ag, Bi, In, Sb, Ga and Zn. The compound region forms a nanocomposite metal diffusion region (321, 521) with the conductor (32, 52). The compound region may contain at least two kinds of components selected from the group consisting of a first metal component, a second metal component and a third metal component, the first metal component containing Cu and at least one element selected from the group consisting of Si, B, Ti, Al, Ag and Zn; the second metal component containing Sn, Cu and at least one element selected from the group consisting of Si, B, Ti, Al, Ag and Zn; the third metal component containing: (a) Sn, Bi, Ga and at least one element selected from the group consisting of Si, B, Ti, Al, Ag and Zn; or (b) Sn, Bi, In, Sb and at least one element selected from the group consisting of Ga, Si, B, Ti, Al, Ag and Zn, wherein the melting point T1 of the first metal component, the melting point T2 of the second metal component and the melting point T3 of the third metal component satisfy the relationship T1>T2>T3.
In other embodiments, a through conductor (72) provided in a hole or groove in a substrate (71) and terminal conductors (74, 75) or a metallisation trace (92) contain Cu, Sn and at least one element selected from the group consisting of Si, B, Ti, Al, Ag, Bi, In, Sb, Ga and Zn having a nanocomposite metal diffusion region within.

29. 发明公开

EP2839904A1 Functional material 有权
标题翻译： Funktionelles材料
公开(公告)号：EP2839904A1
公开(公告)日：2015-02-25
申请号：EP14275173.4
申请日：2014-08-19
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Sekine, Yurina
IPC分类号： B22F1/00 , C22C9/00 , C22C9/02 , C22C12/00 , C22C13/00 , C22C13/02 , H01L21/768
CPC分类号： H01L24/16 , B22F1/0003 , B22F1/0059 , C22C9/00 , C22C9/02 , C22C12/00 , C22C13/00 , C22C13/02 , H01L23/481 , H01L24/13 , H01L24/29 , H01L24/32 , H01L2924/13091 , H01L2924/00
摘要： A functional material includes at least two kinds of particles selected from the group consisting of first metal composite particles, second metal composite particles and third metal composite particles. The first metal composite particles, the second metal composite particles and the third metal composite particles each contain two or more kinds of metal components. The melting point T1(°C) of the first metal composite particles, the melting point T2(°C) of the second metal composite particles and the melting point T3(°C) of the third metal composite particles satisfy a relationship of T1>T2>T3.
摘要翻译：功能材料包括选自第一金属复合颗粒，第二金属复合颗粒和第三金属复合颗粒中的至少两种颗粒。第一金属复合颗粒，第二金属复合颗粒和第三金属复合颗粒各自含有两种或更多种金属组分。第一金属复合颗粒的熔点T1（℃），第二金属复合颗粒的熔点T2（℃）和第三金属复合颗粒的熔点T3（℃）满足关系式T1> T2> T3。

30. 发明公开

EP2835822A1 Wiring substrate and manufacturing method therefor 有权
标题翻译： Anschlusssubstrat und Herstellungsverfahrendafür
公开(公告)号：EP2835822A1
公开(公告)日：2015-02-11
申请号：EP14179882.7
申请日：2014-08-05
申请人： Napra Co., Ltd.
发明人： Sekine, Shigenobu , Ikeda, Hiroaki , Sekine, Yurina
IPC分类号： H01L21/768 , H01L23/48
摘要： A wiring substrate includes a semiconductor substrate, an insulator and a plurality of columnar conductors. The insulator is made of an insulating material filled in a groove or hole provided in the semiconductor substrate. The plurality of columnar conductors are filled in grooves or holes provided in the insulator. The grooves or holes are arranged at a narrow pitch in a plane of the insulator. The insulating material has a Si-O bond obtained by reacting Si particles with an organic Si compound.
摘要翻译：布线基板包括半导体基板，绝缘体和多个柱状导体。绝缘体由填充在设置在半导体衬底中的沟槽或孔中的绝缘材料制成。多个柱状导体填充在设置在绝缘体中的槽或孔中。凹槽或孔在绝缘体的平面中以窄间距排列。绝缘材料具有通过使Si颗粒与有机Si化合物反应而获得的Si-O键。

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