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21. 发明授权

EP1636985B1 METHOD AND APPARATUS FOR REDUCING EFFECTS OF DARK CURRENT AND DEFECTIVE PIXELS IN AN IMAGING DEVICE 有权
标题翻译：方法和装置以降低暗电流和缺陷像素的效果在图像设置
公开(公告)号：EP1636985B1
公开(公告)日：2011-03-02
申请号：EP04755885.3
申请日：2004-06-24
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： H04N5/16 , H04N5/217
CPC分类号： H04N5/335 , H04N5/361 , H04N5/367
摘要： A method and apparatus for identifying and compensating for the effects of defective pixels in high resolution digital cameras having image processing apparatus. The apparatus includes a storage system for storing data corresponding to either a dark current reference image and a white reference image and at least one actual image captured by a pixel array, and at least one processor coupled to the storage system for compensating the data corresponding to the actual image based upon the stored data. The method includes capturing and storing both dark and white reference images as well as capturing and storing actual images, identifying pixels that are affected by dark current or are defective pixels, reading data corresponding to pixels of an actual image affected by dark current or that are defective from the storage system and compensating the affected pixels.

22. 发明公开

EP2206143A2 FLOATING BODY FIELD-EFFECT TRANSISTORS, AND METHODS OF FORMING FLOATING BODY FIELD-EFFECT TRANSISTORS 有权
标题翻译：浮体场效应晶体管和方法的形成浮体场效应晶体管
公开(公告)号：EP2206143A2
公开(公告)日：2010-07-14
申请号：EP08841399.2
申请日：2008-09-19
申请人： Micron Technology, INC.
发明人： LIU, Jun , LI, Di , VIOLETTE, Michael, P. , MOULI, Chandra , KIRSH, Howard
IPC分类号： H01L21/335
CPC分类号： H01L27/1203 , H01L27/10802 , H01L29/66477 , H01L29/7841 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.

23. 发明公开

EP1974385A1 IMAGE SENSOR WITH IMPROVED SURFACE DEPLETION 审中-公开
标题翻译：具有改进的表面耗尽图像传感器
公开(公告)号：EP1974385A1
公开(公告)日：2008-10-01
申请号：EP07709599.0
申请日：2007-01-05
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1462 , H01L27/14643
摘要： An image sensor device having a pixel cell with a pinned photodiode, which utilizes the fixed charge of an high K dielectric layer over the n-type region for the pinning effect without implanting a p-type layer over the n-type region, and methods of forming such a device.

24. 发明公开

EP1972007A2 METHOD AND APPARATUS FOR PROVIDING AN INTEGRATED CIRCUIT HAVING P AND N DOPED GATES 审中-公开
标题翻译：方法和设备提供集成电路掺杂的p型和n-GATES
公开(公告)号：EP1972007A2
公开(公告)日：2008-09-24
申请号：EP07709598.2
申请日：2007-01-05
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra , PAREKH, Kunal, R.
IPC分类号： H01L21/8238 , H01L27/146 , H01L29/51
CPC分类号： H01L21/823842 , H01L21/28202 , H01L21/823857 , H01L27/14689 , H01L29/518
摘要： A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.

25. 发明公开

EP1782476A1 DEUTERATED STRUCTURES FOR IMAGE SENSORS AND METHODS FOR FORMING THE SAME 审中-公开
标题翻译：氘化结构是图像传感器及其制造方法
公开(公告)号：EP1782476A1
公开(公告)日：2007-05-09
申请号：EP05769383.0
申请日：2005-07-07
申请人： MICRON TECHNOLOGY, INC.
发明人： MOULI, Chandra
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14601 , H01L27/14609 , H01L27/1463 , H01L27/14687
摘要： A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device.

26. 发明公开

EP1779425A2 MEMORY DEVICES, TRANSISTORS, MEMORY CELLS, AND METHODS OF MAKING SAME 有权
标题翻译：存储设备，晶体管，存储电池及其制备方法
公开(公告)号：EP1779425A2
公开(公告)日：2007-05-02
申请号：EP05803899.3
申请日：2005-07-25
申请人： MICRON TECHNOLOGY, INC.
发明人： MOULI, Chandra
IPC分类号： H01L21/8239 , H01L21/336 , H01L29/78 , H01L27/105
CPC分类号： H01L29/66666 , H01L21/8213 , H01L27/105 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/1054 , H01L29/1608 , H01L29/165 , H01L29/41783 , H01L29/4236 , H01L29/7827 , H01L29/785 , Y10S438/931
摘要： A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.

27. 发明公开

EP1642340A1 TAILORING GATE WORK-FUNCTION IN IMAGE SENSORS 有权
标题翻译：在BILDSENSOREN的ANPASSUNG DER GATE-WORKFUNKTION
公开(公告)号：EP1642340A1
公开(公告)日：2006-04-05
申请号：EP04755883.8
申请日：2004-06-22
申请人： MICRON TECHNOLOGY, INC.
发明人： MOULI, Chandra
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609
摘要： Embodiments of the invention provide a method of forming a pixel cell and the resultant pixel cell a photo-conversion device formed at a surface of a substrate and a transistor adjacent to the photo-conversion device. The transistor comprises a gate overlying a channel region. The gate comprises at least one gate region having a work-function greater than a work-function of n+ polysilicon. The channel region comprises respective portions below each gate region. A dopant concentration in at least one portion of the channel region is determined at least in part by the work-function of the respective gate region.
摘要翻译：本发明的实施例提供一种形成像素单元的方法，并且所得到的像素单元形成在与光转换器件相邻的衬底和晶体管的表面处的光转换器件。晶体管包括覆盖沟道区的栅极。栅极包括具有大于n +多晶硅的功函数的功函数的至少一个栅极区。沟道区域包括每个栅极区域下方的相应部分。沟道区域的至少一部分中的掺杂剂浓度至少部分地由相应栅极区域的功函数确定。

28. 发明公开

EP1563544A1 GROUNDED GATE AND ISOLATION TECHNIQUES FOR REDUCING DARK CURRENT IN CMOS IMAGE SENSORS 审中-公开
标题翻译：栅极接地电极和分离的技术，可降低暗电流CMOS图像传感器中
公开(公告)号：EP1563544A1
公开(公告)日：2005-08-17
申请号：EP03786643.1
申请日：2003-11-12
申请人： MICRON TECHNOLOGY, INC.
发明人： MOULI, Chandra , RHODES, Howard
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689
摘要： Isolation methods and devices for isolating regions of a semiconductor device. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of an image sensor. The isolation methods also include forming an isolation gate over substantial portions of a field isolation region to isolate pixels in an array of pixels. The isolation method and structure further include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.

29. 发明授权

EP3033770B1 VERTICAL FERROELECTRIC FIELD EFFECT TRANSISTOR CONSTRUCTIONS AND CONSTRUCTIONS COMPRISING A PAIR OF VERTICAL FERROELECTRIC FIELD EFFECT TRANSISTORS 有权
公开(公告)号：EP3033770B1
公开(公告)日：2019-10-30
申请号：EP14836755.0
申请日：2014-07-22
申请人： Micron Technology, Inc.
发明人： KARDA, Kamal, M. , MOULI, Chandra , SANDHU, Gurtej, S.
IPC分类号： H01L27/115 , H01L29/786 , H01L29/24 , H01L29/51 , H01L21/8244

30. 发明公开

EP3033770A1 VERTICAL FERROELECTRIC FIELD EFFECT TRANSISTOR CONSTRUCTIONS, CONSTRUCTIONS COMPRISING A PAIR OF VERTICAL FERROELECTRIC FIELD EFFECT TRANSISTORS, VERTICAL STRINGS OF FERROELECTRIC FIELD EFFECT TRANSISTORS, AND VERTICAL STRINGS OF LATERALLY OPPOSING PAIRS OF VERTICAL FERROELECTRIC FIELD EFFECT TRANSISTORS 有权
标题翻译：垂直FERRO电场效应晶体管结构，结构具有垂直FERRO电场效应晶体管的对，垂直绞合FERRO电场效应晶体管和垂直轨道为相对的一对垂直FERRO电场效应晶体管
公开(公告)号：EP3033770A1
公开(公告)日：2016-06-22
申请号：EP14836755.0
申请日：2014-07-22
申请人： Micron Technology, Inc.
发明人： KARDA, Kamal, M. , MOULI, Chandra , SANDHU, Gurtej, S.
IPC分类号： H01L27/115 , H01L21/8247
摘要： A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating core and has a lateral wall thickness of 1 monolayer to 7 monolayers. A ferroelectric gate dielectric material encircles the transition metal dichalcogenide material. Conductive gate material encircles the ferroelectric gate dielectric material. The transition metal dichalcogenide material extends elevationally inward and elevationally outward of the conductive gate material. A conductive contact is directly against a lateral outer sidewall of the transition metal dichalcogenide material that is a) elevationally inward of the conductive gate material, or b) elevationally outward of the conductive gate material. Additional embodiments are disclosed.
摘要翻译：垂直铁电场效应晶体管结构包括分离芯。的过渡金属二硫属化物材料围绕隔离芯，并具有1个单层的侧壁厚度，以7个单层。一种铁电栅极介电材料包围所述过渡金属二硫属化物材料。导电栅极材料包围的铁电栅极介电材料。过渡金属二硫属化物材料延伸高度上向内和向外高度上的导电栅极材料的。的导电性触头直接抵靠所述过渡金属二硫属化物材料的一个横向外侧壁并是：a）在高度向内栅极导电材料制成的，或b）在高度向外的导电栅极材料的。另外的实施方式游离缺失光盘。

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