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11. 发明公开

EP1980909A1 Improved method for etching photolithograhic substrates 审中-公开
标题翻译： Verbethes Verfahren zumÄtzenvon fotolithografischen Substraten
公开(公告)号：EP1980909A1
公开(公告)日：2008-10-15
申请号：EP08011148.7
申请日：2006-12-07
申请人： Oerlikon USA Inc.
发明人： Plumhoff, Jason
IPC分类号： G03F1/08
CPC分类号： G03F1/32 , G03F1/80 , H01J2237/2001 , H01J2237/334
摘要： The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber. After the photolithographic substrate is at the target temperature, a plasma is ignited from the processing gas wherein the photolithographic substrate is processed using the plasma. Upon completion of the processing, the photolithographic substrate is unloaded from the vacuum chamber.
摘要翻译：本发明提供一种在真空室内处理光刻基片的方法。该方法包括以下步骤：在真空室内处理光刻基片之前将光刻基板冷却至目标温度。至少一种处理气体被引入真空室。在光刻基板处于目标温度之后，从处理气体点燃等离子体，其中使用等离子体处理光刻基板。在完成处理后，光刻基板从真空室中卸载。

12. 发明公开

EP1918776A1 Etching of nano-imprint templates using an etch reactor 有权
标题翻译： Ätzungvon NanodruckvorlagenübereinenÄtzreaktor
公开(公告)号：EP1918776A1
公开(公告)日：2008-05-07
申请号：EP07020929.1
申请日：2007-10-25
申请人： Applied Materials, Inc.
发明人： Chandraachood, Madhavi, R. , Kumar, Ajay
IPC分类号： G03F1/08 , C23F4/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/80 , G03F7/0002
摘要： Methods for etching a metal layer using an imprinted resist material are provided. In one embodiment, a method for processing a photolithographic reticle includes providing a reticle (122) having a metal photomask layer (320) formed on an optically transparent substrate (310) and an imprinted resist material deposited on the metal photomask layer, etching recessed regions (398) of the imprinted resist material to expose portions of the metal photomask layer in a first etching step, and etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein at least one of the first or second etching steps utilizes a plasma formed from a processing gas comprising oxygen, halogen and chlorine containing gases. In one embodiment, the process gas is utilized in both the first and second etching steps. In another embodiment, the first and second etching steps are performed in the same processing chamber (100).
摘要翻译：提供了使用印刷抗蚀剂材料蚀刻金属层的方法。在一个实施例中，一种用于处理光刻掩模版的方法包括提供具有形成在光学透明基板（310）上的金属光掩模层（320）和沉积在金属光掩模层上的压印抗蚀剂材料的掩模版（122），蚀刻凹陷区域（398），以在第一蚀刻步骤中曝光金属光掩模层的部分，并且在第二蚀刻步骤中通过所述压印的抗蚀剂材料蚀刻所述金属光掩模层的暴露部分，其中所述第一蚀刻步骤中的至少一个或第二蚀刻步骤利用由包含氧，卤素和含氯气体的处理气体形成的等离子体。在一个实施例中，处理气体用于第一和第二蚀刻步骤。在另一个实施例中，第一和第二蚀刻步骤在相同的处理室（100）中执行。

13. 发明公开

EP1918775A2 Mask etch process 审中-公开
标题翻译：掩模蚀刻工艺
公开(公告)号：EP1918775A2
公开(公告)日：2008-05-07
申请号：EP07020637.0
申请日：2007-10-22
申请人： Applied Materials, Inc.
发明人： Chandrachood, Madhavi, R. , Sabharwal, Amitabh , Leung, Toi, Yue, Becky , Grimbergen, Michael
IPC分类号： G03F1/08
CPC分类号： G03F1/80
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate (122) having a metal photomask layer (320) disposed on a optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, at least one of trifluoromethane (CHF 3 ), sulfur hexafluoride (SF 6 ), hexafluoroethane (C 2 F 6 ) or ammonia (NH 3 ) and optionally a chlorine-free halogen containing gas and/or an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模版的基板上的金属层的方法和装置。一方面，提供了一种用于处理衬底的方法，该方法包括：将具有布置在处理室中的光学透明材料上的金属光掩模层（320）的衬底（122）定位，引入包含含氧气体的处理气体处理气体，（CHF 3），六氟化硫（SF 6），六氟乙烷（C 2 F 6）或氨（NH 3）中的至少一种和任选的不含氯的含卤素气体和/或惰性气体中的至少一种加入处理室中，在处理室中产生处理气体的等离子体，并且蚀刻设置在衬底上的金属层的暴露部分。

14. 发明公开

EP1211558A4 SUBSTRATE SELECTOR 有权
标题翻译：选择设备用于基材
公开(公告)号：EP1211558A4
公开(公告)日：2008-03-26
申请号：EP01934361
申请日：2001-05-28
申请人： DAINIPPON PRINTING CO LTD
发明人： ISHIDA KOUJI , YAMAZAKI KIYOSHI , NARA HIDEYUKI , SEINO HAJIME
IPC分类号： G03F1/68 , G03F1/84 , G05B19/418 , H01L21/027 , G03F1/08
CPC分类号： G05B19/41875 , G03F1/84 , G05B2219/32186 , G05B2219/32201 , Y02P90/22
摘要： A substrate selector for selecting a substrate used for an object product from among photosensitive material layer coated substrates for fabricating a photomask on which a photosensitive material layer is formed by coating, characterized by comprising one or more defect registration units for registering the result of defect inspection in accordance with a defect of a photosensitive material layer coated substrate in a database, a photosensitive material layer lot check result registration unit for registering the photosensitive material layer lot check result of check of the sensitivity of a photosensitive material layer for each lot of photosensitive material layer coat in a database, and a substrate selecting unit for selecting a substrate used for producing an object product from among substrates according to the defect inspection result and the photosensitive material layer lot check result registered in the databases.

15. 发明公开

EP1802452A2 OPTICAL ELEMENT WITH AN OPAQUE CHROME COATING HAVING AN APERTURE AND METHOD OF MAKING SAME 有权
标题翻译：具有产生不透明铬镀层和开工艺光学元件
公开(公告)号：EP1802452A2
公开(公告)日：2007-07-04
申请号：EP05811945.4
申请日：2005-10-20
申请人： Corning Incorporated
发明人： UKRAINCZYK, Ljerka , BELLMAN, Robert Alan , QUINTAL, Jose M , SACHENIK, Paul A
IPC分类号： B32B3/24 , G03F1/08
CPC分类号： C23F4/00 , C03C17/36 , C03C17/3649 , C03C2217/218 , C03C2217/78 , C03C2218/33 , C23C14/025 , C23C14/083 , C23C14/22 , C23C28/322 , C23C28/3455 , C23C30/00 , G02F1/133512
摘要： A substrate (310) includes an opaque chrome coating (320) on a surface of the substrate (310) dry-etched to form an aperture (340), wherein chrome in the aperture is below detectable limit. A method of forming an opaque chrome coating (320) on a substrate (310) includes depositing an initial thickness of the opaque chrome coating on the substrate without ion-assist or with undetectable ion-assist and depositing the remainder of the opaque chrome coating with or without ion-assist. In one embodiment the invention is directed to an apertured optical element (300) having a substrate transmissive to light (310) and an opaque chrome coating (320) on the substrate defining an aperture (340). Three and four layer opaque coatings of various materials are disclosed, including three layer chrome/chrome oxide/chrome coatings.

16. 发明授权

EP1520208B1 MASK AND MANUFACTURING METHOD USING MASK 有权
标题翻译：面具和该掩码，使用过程
公开(公告)号：EP1520208B1
公开(公告)日：2007-02-28
申请号：EP03740910.9
申请日：2003-06-13
申请人： Koninklijke Philips Electronics N.V.
发明人： FRENCH, Ian D., Philips Intellectual Prop. & Std. , HEWETT, James, Philips Intellectual Prop. & Std.
IPC分类号： G03F1/14 , G03F1/08
CPC分类号： G03F1/32 , G03F1/54
摘要： A mask 12 includes half-tone layer 16 and light blocking layer 20. The half-tone layer 16 is of silicon rich silicon nitride SiNx:H. x may be in the range 0 to 1, preferably 0.2 to 0.6, so that the optical band gap can be in the range 2.1eV to 2.5eV. It has been discovered that photoresist removal when the mask 12 is used is very dependent on the band gap, and not too dependent on the thickness, so good control of TFT manufacture can be obtained.

17. 发明公开

EP1007969A4 LITHOGRAPHIC MASK DESIGN AND SYNTHESIS OF DIVERSE PROBES ON A SUBSTRATE 失效
标题翻译：制作平版印刷口罩和不同的探针的合成在基底上
公开(公告)号：EP1007969A4
公开(公告)日：2006-12-13
申请号：EP97953287
申请日：1997-12-17
申请人： AFFYMETRIX INC
发明人： HUBBELL EARL A , STRYER LUBERT , MITTMANN MICHAEL P
IPC分类号： G01N33/53 , B01J19/00 , C07B61/00 , C07K1/04 , C12M1/00 , C12N15/09 , C12Q1/68 , C40B40/06 , C40B40/10 , C40B40/12 , C40B60/14 , G01N33/566 , G01N37/00 , G03F1/08 , G03F7/00 , G06F19/00 , G01N33/543 , G03F9/00
CPC分类号： B82Y30/00 , B01J19/0046 , B01J2219/00432 , B01J2219/00527 , B01J2219/00529 , B01J2219/00585 , B01J2219/0059 , B01J2219/00596 , B01J2219/00608 , B01J2219/00659 , B01J2219/00675 , B01J2219/00689 , B01J2219/00695 , B01J2219/00711 , B01J2219/00722 , B01J2219/00725 , B01J2219/00731 , C07K1/045 , C07K1/047 , C40B40/06 , C40B40/08 , C40B40/10 , C40B40/12 , C40B50/14 , C40B60/14 , G03F7/00 , G03F7/70466
摘要： Systems and methods of synthesizing probes on a substrate are provided. One or more shift reticles are utilized to uniformly add monomers to the substrate at specified locations. The shift reticles are shifted relative to the substrate between monomer addition steps. Additionally, characteristics of the desired probes may be specified at synthesis time.

18. 发明公开

EP1724813A1 INTEGRATED CIRCUIT DESIGN METHOD, DESIGN SUPPORT PROGRAM USED IN THE INTEGRATED CIRCUIT DESIGN METHOD, AND INTEGRATED CIRCUIT DESIGN SYSTEM 审中-公开
标题翻译：方法集成电路设计，AT所用设计支援计划和系统集成电路设计设计集成电路的过程
公开(公告)号：EP1724813A1
公开(公告)日：2006-11-22
申请号：EP05710099.2
申请日：2005-02-10
申请人： Japan Science and Technology Agency
发明人： KAWAMOTO, Hiroshi
IPC分类号： H01L21/02 , G03F1/08 , G03F1/16 , G06F17/50 , H01L21/027 , H01L21/82
CPC分类号： G06F17/5045
摘要： [PROBLEMS] To provide an integrated circuit design method realized as a photomask/photomaskless fusion method wherein a photomask trial method and a photomaskless trial method are fused with each other so as to obtain both a merit of the photomask trial method allowing production of trial chips without producing photomasks and a merit of the photomaskless trial method allowing use of pattern information for a trial production as pattern information for a mass production trial. To provide a design assistance program and an integrated circuit design system used in such an integrated circuit design method. [SOLVING MEANS] A trial integrated circuit is produced based on pattern information for a trial production, without using a photomask, under a common design circumstance which can be utilized in both a photomaskless step of producing an integrated circuit based on pattern information without using a photomask and a photomask step of producing an integrated circuit based on pattern information with using a photomask, with the pattern information for the trial production complying with both the photomaskless step and the photomask step. A common pattern information is prepared by evaluating the trial integrated circuit and by modifying the pattern information for the trial production in accordance with results of the evaluation, if necessary, without being modified. A photomask for a mass production is produced by carrying out a formal conversion of the common pattern information, if necessary.
摘要翻译： [问题]为了提供关于实现为光掩模/ photomaskless融合方法worin光掩模试验方法和photomaskless试验方法融合彼此集成电路设计方法，以便获得这两个所涉及的光掩模试方法允许生产的试片的优点而不产生光掩模和试验方法photomaskless允许使用的图案信息为试制作为用于大量生产试验图案信息的优点。提供一种设计援助方案，在寻求集成电路设计方法中使用的集成电路设计系统。 [解决手段]一种试验集成电路基于用于试生产图案信息产生，不使用光掩模，在一个共同的设计环境可以在两种以基于图案信息集成电路制造，而无需使用的photomaskless步骤被用于光掩模，并在基于图案信息与使用光掩模，与用于试生产与两个photomaskless步骤和光掩模步骤相符的图案信息的集成电路制造的光掩模步骤。一个常见的模式信息是通过评估试验集成电路和通过修改试生产中雅舞的评价的结果的图案信息，并根据需要，没有被修改制备。一种用于大量生产光掩模通过进行的共用图案信息的正式转换，如果有必要生产。

19. 发明公开

EP1454112A4 INTERFEROMETRY SYSTEM HAVING A DYNAMIC BEAM-STEERING ASSEMBLY FOR MEASURING ANGLE AND DISTANCE 审中-公开
标题翻译：用动态的光束控制装置干涉测量系统的角度和距离
公开(公告)号：EP1454112A4
公开(公告)日：2006-09-20
申请号：EP00930342
申请日：2000-05-05
申请人： ZYGO CORP
发明人： HILL HENRY A
IPC分类号： G01B9/02 , G01B11/00 , G01B11/26 , G03F1/08 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G01B9/02019 , G01B9/02003 , G01B9/02068 , G01B9/02081 , G01B2290/70 , G03F7/70775
摘要： The invention features an interferometry system (10) that measures changes in the angular orientation of a measurement object (66) and that also includes at least one dynamic beam-steering assembly (60). The dynamic beam-steering assembly redirects one or more beams (15, 16) within the interferometry system in response to a change in the angular orientation of the measurement object. In many embodiments, the presence of the dynamic beam-steering assembly permits the interferometry system to measure the angular orientation of the measurement object using only a single measurement beam to contact the measurement object. Furthermore, in many embodiments, a control signal (76) derived from the measurement beam contacting the measurement object causes the beam-steering assembly to redirect a measurement beam to contact the measurement object at normal incidence. When at such normal incidence, the interferometry system can calculate the angular orientation of the measurement object based on one or more interferometric signals derived from the measurement beam or based on the orientation of the beam-steering assembly itself.

20. 发明公开

EP1602974A1 MASK MAKING METHOD, MASK MAKING DEVICE, AND MASK DRAWING DEVICE 审中-公开
标题翻译：方法和装置口罩蒙版绘制生产和考虑器件
公开(公告)号：EP1602974A1
公开(公告)日：2005-12-07
申请号：EP04705928.2
申请日：2004-01-28
申请人： Ball Semiconductor Inc. , OHMI, Tadahiro
发明人： Ohmi, Tadahiro , Sugawa, Shigetoshi , Takehisa, Kiwamu
IPC分类号： G03F1/08 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70283 , G03F7/70291
摘要： Laser light in a pattern reflected by a two-dimensional array micromirror 106 that is controlled on the basis of mask data of a mask pattern data output device 107 forms an enlarged pattern 110. This enlarged pattern is projected in a reduced manner onto a mask substrate 109 through a reduction-projection optical system 102, thereby forming a lithography pattern 111. Since a large number of patterns are written in an instant by the two-dimensional array micromirror 106, a time required for lithography the entire mask pattern is extremely shortened as compared with a conventional one. As a result, the mask cost can be largely reduced.
摘要翻译：在由二维阵列微镜106反射的图案的激光也被掩模图案数据输出装置107种形式的放大图案110的该放大的图案以缩小的方式投射的掩模数据的基础上，到掩模衬底控制 109通过一个缩小投影光学系统102，由此形成光刻图案111由于大量的模式由二维阵列微镜106写入到瞬间，光刻所需要的时间将整个掩模图案被大大地缩短为与以往相比。其结果，掩模成本能够大大降低。

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