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    • 11. 发明公开
    • METHOD AND APPARATUS FOR CONTROLLING AN IGBT DEVICE
    • VERFAHREN UND VORRICHTUNG ZUR STEUERUNG EINER IGBT-VORRICHTUNG
    • EP3072026A4
    • 2017-07-19
    • EP13897831
    • 2013-11-22
    • NXP USA INC
    • SICARD THIERRYPERRUCHOUD PHILIPPE
    • G05F3/16H03K17/605
    • H03K17/567H03K17/163H03K17/168H03K17/605H03K17/689
    • The present invention comprises a method and apparatus for controlling an IGBT device. The method comprises, upon receipt of a first and at least one further IGBT control signals, the first IGBT control signal indicating a required change in operating state of the IGBT device, controlling an IGBT driver module for the IGBT device to change an operating state of the IGBT device by applying a first logical state modulation at an input of an IGBT coupling channel, and applying at least one further modulation to the logical state at the input of the IGBT coupling channel in accordance with the at least one further IGBT control signal within a time period from the first logical state modulation, the time period being less than a state change reaction period Δt for the at least one IGBT device.
    • 本发明包括用于控制IGBT器件的方法和设备。 该方法包括:在接收到第一和至少一个另外的IGBT控制信号时,第一IGBT控制信号指示IGBT器件的操作状态中的所需变化;控制用于IGBT器件的IGBT驱动器模块,以改变IGBT器件的操作状态 所述IGBT器件通过在IGBT耦合沟道的输入处应用第一逻辑状态调制,并且根据所述IGBT耦合沟道的输入端处的所述至少一个另外的IGBT控制信号对所述逻辑状态施加至少一个另外的调制 从所述第一逻辑状态调制开始的时间段,所述时间段小于所述至少一个IGBT器件的状态改变反应时间段Δt。
    • 12. 发明公开
    • SCHUTZSCHALTGERÄT
    • EP3158573A1
    • 2017-04-26
    • EP15730496.5
    • 2015-06-19
    • Eaton Industries (Austria) GmbH
    • BARTONEK, Michael
    • H01H89/06H02J13/00H01H89/08
    • H01H89/06H01H9/542H01H89/08H01H2009/544H01H2009/546H02H1/0023H02H1/0061H02H3/08H02H5/041H02H7/22H02H9/001H02J13/0075H03K17/567Y02E60/7853Y04S40/126
    • In a circuit breaker (1), the invention proposes that a switching path (20) has at least one line interruption apparatus (21), wherein the circuit breaker (1) has a disconnection unit (22) and a connection unit (23) which are each connected to the line interruption apparatus (21), wherein the switching device (1) has at least one measuring arrangement (7) for measuring at least one electrical variable on the at least one switching path (20), wherein the disconnection unit (22) further has a comparison and decision unit (24), which comparison and decision unit (24) is connected to the measuring arrangement (7) and to the line interruption apparatus (21), wherein the circuit breaker (1) has a first data interface (6), which first data interface (6) is designed to receive at least one connection command and/or one disconnection command, and wherein the first data interface (6) is connected to the disconnection unit (22) and the connection unit (23).
    • 在断路器(1)中,本发明提出了一种开关路径(20)具有至少一个线路中断装置(21),其中断路器(1)具有断开单元(22)和连接单元(23) (1)具有用于测量所述至少一个开关路径(20)上的至少一个电变量的至少一个测量装置(7),其中所述断开装置(21)与所述线路中断装置 单元(22)还具有比较和判定单元(24),该比较和判定单元(24)连接到测量装置(7)和线路中断装置(21),其中断路器 (6),所述第一数据接口(6)被设计为接收至少一个连接命令和/或一个断开命令,并且其中所述第一数据接口(6)连接到所述断开单元(22);以及第二数据接口 连接单元(23)。
    • 13. 发明公开
    • GATE-POWER-SUPPLY DEVICE AND SEMICONDUCTOR CIRCUIT BREAKER USING SAME
    • GATE-NETZTEILVORRICHTUNG UND HALBLEITERSCHUTZSCHALTER DAMIT
    • EP3029820A4
    • 2017-04-05
    • EP14831422
    • 2014-07-25
    • MITSUBISHI ELECTRIC CORP
    • YABUMOTO TAKUYATANAKA KAZUFUMIIWABUKI HIROYASU
    • H02M1/08H02H7/26H03K17/10H03K17/567H03K17/60H03K17/691
    • H02M3/33507H02H7/268H02M1/08H02M1/088H02M2001/0006H03K17/107H03K17/567H03K17/601H03K17/691
    • A small and highly-efficient gate-power-supply device that has high insulating property and that can stabilize voltage to be applied to gate drivers. A gate-power-supply device (1) provided with an inverter circuit (3), a transformer, and rectifier circuits (7) includes: secondary-side parallel capacitors (C P ) connected in parallel to secondary-side coils (5) of the transformer and for cancelling inductance components of the secondary-side coils (5) at the drive frequency f 0 of the inverter circuit (3); and a primary-side series capacitor (C S ) connected in series to a primary-side coil (4) of the transformer, and for cancelling the imaginary term (inductance component) of the combined impedance of the gate drivers (8), the rectifier circuits (7), the secondary-side parallel capacitors (C P ), the secondary-side coils (5), transformer cores (6) and the primary-side coil (4), which are a load viewed from the inverter circuit (3).
    • 一种具有高绝缘性能且可稳定施加到栅极驱动器的电压的小型高效栅极电源装置。 设置有逆变器电路(3),变压器和整流电路(7)的栅极电源装置(1)包括:与二次侧线圈(5)并联连接的二次侧并联电容器(CP) 变压器,用于在逆变器电路(3)的驱动频率f 0下消除次级侧线圈(5)的电感分量; 以及与变压器的初级侧线圈(4)串联连接的初级侧串联电容器(CS),并且用于消除栅极驱动器(8)的组合阻抗的虚拟项(电感分量),整流器 作为从逆变器电路(3)观察的负载的电路(7),次级侧并联电容器(CP),次级侧线圈(5),变压器铁心(6)和初级侧线圈 )。
    • 14. 发明公开
    • DRIVE SIGNAL WAVE LOSS DETECTION CIRCUIT AND SWITCHING TUBE DRIVE CIRCUIT
    • DETEKTIONSSCHALTUNGFÜRANTRIEBSSIGNALWELLENVERLUST UNDSCHALTRÖHRENTREIBERSCHALTUNG
    • EP3148079A1
    • 2017-03-29
    • EP14892449.1
    • 2014-12-08
    • Huawei Technologies Co., Ltd.
    • CAO, ZhenLIU, YunfengZHANG, Yanzhong
    • H03K17/74
    • H03K17/567G01R31/026G01R31/44H03B28/00H03K4/085H03K7/08H03K17/08122H03K17/122H03K17/162H03K17/18
    • A wave loss detection circuit for a drive signal and a switching transistor drive circuit are disclosed. The wave loss detection circuit includes: a diode, a first resistor, a first energy storage unit, a second resistor, and a comparison unit, where: an anode of the diode is configured to receive a first drive signal, and a cathode of the diode is connected to a first end of the first resistor; a second end of the first resistor is connected to a first end of the first energy storage unit, a first end of the second resistor, and a first input end of the comparison unit; a second end of the first energy storage unit and a second end of the second resistor are connected to a ground level, and a resistance of the first resistor is less than a resistance of the second resistor; a second input end of the comparison unit is configured to receive a threshold voltage, and if a voltage signal received by the first input end is less than the threshold voltage, a first voltage signal is output, which indicates that a wave loss occurs in the first drive signal, where the threshold voltage is a critical voltage of the first drive signal at a high level. It may be learned that in embodiments of the present invention, wave loss detection is implemented by using a basic component, and no sensor is needed, so that costs are reduced.
    • 公开了一种用于驱动信号和开关晶体管驱动电路的波浪损失检测电路。 波浪损失检测电路包括:二极管,第一电阻器,第一能量存储单元,第二电阻器和比较单元,其中:二极管的阳极被配置为接收第一驱动信号, 二极管连接到第一电阻器的第一端; 第一电阻器的第二端连接到第一能量存储单元的第一端,第二电阻器的第一端和比较单元的第一输入端; 第一能量存储单元的第二端和第二电阻器的第二端连接到地电平,并且第一电阻器的电阻小于第二电阻器的电阻; 比较单元的第二输入端被配置为接收阈值电压,并且如果由第一输入端接收的电压信号小于阈值电压,则输出第一电压信号,其指示在 第一驱动信号,其中阈值电压是第一驱动信号的高电平的临界电压。 可以理解,在本发明的实施例中,通过使用基本部件实现波浪损失检测,并且不需要传感器,从而降低成本。
    • 16. 发明公开
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • EP2996233A1
    • 2016-03-16
    • EP15178167.1
    • 2015-07-24
    • Fuji Electric Co., Ltd.
    • ICHIKAWA, Hiroaki
    • H02M1/00H02M1/088H02M7/487H02M7/497
    • H03K17/567H01L2224/48091H02M1/088H02M7/487H02M7/497H01L2924/00014
    • An object of the present invention is to provide a semiconductor device that restrains a potential difference across an auxiliary emitter line that is a wiring in the base potential side of parallel-connected IGBT chips, even though imbalance exists in the characteristics of IGBT chips.
      A semiconductor device of the invention comprises: two switching circuits, one switching circuit comprising IGBT chips T1 through T4 connected in series and clamping diodes D9 and D10 and another switching circuit comprising IGBT chips T5 through T8 connected in series and clamping diodes D11 and D12. The semiconductor device comprises a wiring line 5 and wiring line 6. The wiring line 5 connects the emitter terminal of the IGBT chip T1 and the emitter terminal of the IGBT chip T5 and has a large current carrying capacity and a lower resistance value than the auxiliary emitter line 1. The wiring line 6 connects the emitter terminal of the IGBT chip T3 and the emitter terminal of the IGBT chip T7 and has a large current carrying capacity and a lower resistance value than the auxiliary emitter line 3, resulting in reduction of the potential difference between the emitter terminals of the IGBT chip T1 and the IGBT chip T5 and reduction of the potential difference between the emitter terminals of the IGBT chip T3 and the IGBT chip T7. Therefore, stable gate driving operation is performed.
    • 本发明的一个目的是提供一种半导体器件,即使在IGBT芯片的特性中存在不平衡,也能抑制作为并联连接的IGBT芯片的基极电位侧中的布线的辅助发射极线之间的电位差。 本发明的半导体器件包括两个开关电路,一个开关电路包括串联连接的IGBT芯片T1到T4以及钳位二极管D9和D10,另一个开关电路包括串联连接的IGBT芯片T5到T8以及钳位二极管D11和D12。 半导体器件包括布线5和布线6.布线5连接IGBT芯片T1的发射极端子和IGBT芯片T5的发射极端子,并且具有比辅助电路更大的电流承载能力和更低的电阻值 布线6连接IGBT芯片T3的发射极端子和IGBT芯片T7的发射极端子,并且具有比辅助发射极线3大的载流能力和较低的电阻值,导致 IGBT芯片T1的发射极端子和IGBT芯片T5之间的电位差以及IGBT芯片T3和IGBT芯片T7的发射极端子之间的电位差的减小。 因此,执行稳定的栅极驱动操作。
    • 20. 发明公开
    • 3-Level-Stromrichterhalbbrücke
    • 三电平功率转换器的半桥
    • EP2804307A2
    • 2014-11-19
    • EP14158698.2
    • 2014-03-11
    • SEMIKRON Elektronik GmbH & Co. KG
    • Staudt, Ingo
    • H02M7/00H02M7/487H01L23/48
    • H02M7/003H01L23/3735H01L25/18H01L2924/0002H02M1/32H02M7/487H03K17/567H03K17/74H03K2217/0009H01L2924/00
    • Die Erfindung betrifft eine 3-Level-Stromrichterhalbbrücke mit einem ersten Substrat (2) und einem vom ersten Substrat (2) getrennt angeordneten zweiten Substrat (3), wobei die Leistungshalbleiterschalter (T1,T2,T3,T4) und Dioden (D1,D2,D3,D4) der 3-Level-Stromrichterhalbbrücke (1) derart auf ein erstes Substrat (2) und auf ein zweites Substrat (3) aufgeteilt sind, dass beim bevorzugten Betrieb der 3-Level-Stromrichterhalbbrücke (1) mit einem hohen Leistungsfaktor keine oder nur selten Stromkommutierungen zwischen den Leistungshalbleiterschaltern (T1,T2) und Dioden (D1,D3), die auf dem ersten Substrat (2) angeordnet sind und den Leistungshalbleiterschaltern (T3,T4) und Dioden (D2,D4), die auf dem zweiten Substrat (3) angeordnet sind, auftreten. Die Erfindung schafft eine 3-Level Stromrichterhalbbrücke (1) mit reduzierten Schaltüberspannungen.
    • 本发明涉及一种包括第一基板(2)和布置成从所述第一基板中的一个三电平逆变器半桥(2)分离的第二衬底(3),其中,所述功率半导体开关(T1,T2,T3,T4)和二极管(D1,D2 ,以这样的方式的3电平逆变器的半桥(1)(第1基板2)和上(第二基板3)的D3,D4)被划分,在三电平逆变器的半桥(1)的具有高功率因数的优选操作 很少或二极管的功率半导体开关之间没有Stromkommutierungen(T1,T2)和(D1,D3)设置在所述第一基片(2)布置,并且在所述的功率半导体开关(T3,T4)和二极管(D2,D4) 第二衬底(3)被布置为发生。 本发明提供一种三电平逆变器的半桥(1)具有降低的开关浪涌。