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11. 发明公开

EP2542709A4 CLEANING SOLVENT AND CLEANING METHOD FOR METALLIC COMPOUND 审中-公开
标题翻译：清洁溶剂和清洁方法对于金属连接
公开(公告)号：EP2542709A4
公开(公告)日：2014-08-06
申请号：EP11750264
申请日：2011-02-26
申请人： L AIR LIQUIDE SOCIÉTÉ ANONYME POUR L ETUDE ET L EXPL DES PROCÉDÉS GEORGES CLAUDE
发明人： SAKATA YOICHI
IPC分类号： C23C16/44 , C11D7/50 , H01L21/205 , H01L21/304
CPC分类号： C11D11/0047 , C11D7/264 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/5013 , C11D7/5022 , C23F1/10 , C23G5/032 , C23G5/036
摘要： Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

12. 发明公开

EP1549784A2 COMPOSITIONS OF TRANSITION METAL SPECIES IN DENSE PHASE CARBON DIOXIDE AND METHODS OF USE THEREOF 审中-公开
标题翻译： BERGANGSMETALLSPEZIES作者密相二氧化目前的组成及其使用方法
公开(公告)号：EP1549784A2
公开(公告)日：2005-07-06
申请号：EP03773063.7
申请日：2003-09-30
申请人： Micell Technologies, Inc.
发明人： MCCLAIN, James, B. , GROSS, Stephen, M. , DEYOUNG, James, P. , WAGNER, Mark, I.
IPC分类号： C23G1/02
CPC分类号： C23F1/10 , H01L21/02052 , H01L21/31116 , H01L21/32051 , H01L21/32134
摘要： Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase (i.e., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.

13. 发明授权

EP0131486B1 A method of etching refractory metal film on semiconductor structures 有权转让
$A method of etching refractory metal film on semiconductor structures$
标题翻译：在半导体结构上蚀刻金属薄膜的方法
公开(公告)号：EP0131486B1
公开(公告)日：1988-05-25
申请号：EP84401160.1
申请日：1984-06-06
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Radigan, Kenneth J. , Cleeves, James M.
IPC分类号： H01L21/31
CPC分类号： C23F1/38 , C23F1/10 , C23F1/20 , H01L21/32134

14. 发明公开

EP0131486A1 A method of etching refractory metal film on semiconductor structures 有权转让
$A method of etching refractory metal film on semiconductor structures$
标题翻译：用于半导体结构的难熔金属的层的蚀刻的方法。
公开(公告)号：EP0131486A1
公开(公告)日：1985-01-16
申请号：EP84401160.1
申请日：1984-06-06
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Radigan, Kenneth J. , Cleeves, James M.
IPC分类号： H01L21/31
CPC分类号： C23F1/38 , C23F1/10 , C23F1/20 , H01L21/32134
摘要： A method is disclosed of etching a refractory metal layer on a semiconductor structure comprising subjecting it to a mixture of a Lewis base and an oxidizing agent. In the preferred embodiment a method is described for etching a tungsten-titanium layer on a semiconductor structure by immersing it in a mixture of triethylamine and hydrogen peroxide.

15. 发明公开

EP2927299A3 HEAT STORAGE APPARATUS, METHOD FOR STORING HEAT, AND METHOD FOR PRODUCING HEAT STORAGE APPARATUS 有权
标题翻译：储热装置，方法储存热量及其制造方法储热装置
公开(公告)号：EP2927299A3
公开(公告)日：2015-12-23
申请号：EP15159769.7
申请日：2015-03-19
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Machida, Hironobu , Suzuki, Motohiro , Takeguchi, Shinsuke , Shii, Kentaro
IPC分类号： C09K5/06 , F28D20/02
CPC分类号： F28D20/025 , B01D9/0013 , B01D9/005 , C09K5/063 , C23F1/10 , F24F5/0017 , F28D20/021 , F28D20/028 , F28F13/185 , F28F21/081 , F28F21/084 , F28F21/085 , Y02E60/145 , Y02E60/147
摘要： A heat storage apparatus according to the present disclosure includes a heat storage material and a member. The heat storage material forms a clathrate hydrate by cooling. The member has a surface with a plurality of holes. In the case that the lattice constant of the clathrate hydrate is denoted by L and the outside diameter of a cage included in the clathrate hydrate is denoted by D, the plurality of holes are spaced at intervals of 1 L to 10L, and each of the plurality of holes has a hole diameter of 1D to 20D.

16. 发明公开

EP2664691A1 ETCHING AGENT FOR ALUMINIUM AND ALUMINIUM ALLOYS 审中-公开
标题翻译： ÄTZMITTELFÜRALUMINIUM UNIUMLEGIERUNGEN
公开(公告)号：EP2664691A1
公开(公告)日：2013-11-20
申请号：EP11851919.8
申请日：2011-12-16
申请人： Henkel AG & Co. KGaA
发明人： MORI, Kazuhiko , TAKAKUWA, Hideki , YOROZU, Takayuki
IPC分类号： C23F1/36
CPC分类号： C23F1/20 , C23F1/10 , C23F1/36 , C23F3/02 , H01G9/045 , H01G9/055 , H01G11/70 , H01M4/661 , Y02E60/13
摘要： A composition of an etching agent for aluminum or aluminum alloy and a treatment method thereof are provided. The etching agent does not contain a component not suitable for a wastewater treatment, such as boron and fluorine, and has stable etching performance even when performing an etching treatment continuously. The etching agent has excellent aging resistance providing good etching uniformity and corrosion resistance after etching. This etching agent is an etching agent for aluminum or aluminum alloy, including 50 parts by mass of an aminocarboxylic acid, 5 to 300 parts by mass of at least one selected from a hydroxycarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and salts thereof, and 10 to 800 parts by mass of at least one selected from a hydroxide, a carbonate, and a bicarbonate of an alkali metal, wherein an aqueous solution of the etching agent has a pH of 8 to 10.
摘要翻译：提供铝或铝合金蚀刻剂的组合物及其处理方法。蚀刻剂不含不适于废水处理的成分，例如硼和氟，并且即使连续进行蚀刻处理也具有稳定的蚀刻性能。蚀刻剂具有优异的耐老化性，提供蚀刻后的良好的蚀刻均匀性和耐腐蚀性。该蚀刻剂是铝或铝合金用蚀刻剂，包括50质量份氨基羧酸，5〜300质量份选自羟基羧酸，二羧酸，多元羧酸及其盐中的至少一种和10〜800质量份的碱金属的氢氧化物，碳酸盐和碳酸氢盐中的至少一种，其中，蚀刻剂的水溶液的pH为8〜10。

17. 发明公开

EP2458033A1 Procedure of dynamic deep etching and particle extraction from aluminium alloys 有权
标题翻译： Verfahren zur dynamischenTiefätzungund Partikelextraktion aus Aluminiumlegierungen
公开(公告)号：EP2458033A1
公开(公告)日：2012-05-30
申请号：EP11468004.4
申请日：2011-10-04
申请人： Univerza V Mariboru
发明人： Boncina Tonica , Zupanic Franc , Markoli Bostjan
IPC分类号： C23F1/00 , C23F1/10 , G01N1/32
CPC分类号： C23F1/00 , C23F1/10 , G01N1/32
摘要： The invention is a procedure for dynamic deep etching and particle extraction for aluminium alloys, applicable for quality control of products made of aluminium alloys, and for investigation of aluminium alloys using scanning and transmission electron microscopy, as well as X-ray diffraction. The mode and sequence of individual stages of the procedure enables uniform dissolution of aluminium matrix throughout the entire volume of a specimen by using a solution composed of iodine, tartaric acid and methanol, in which the components have concentrations determined according to specimen dimensions. It is important in this regard that the solution penetrates into the interior of the specimen at specific sites only and that the surface oxide layer remains compact. An ultrasonic device is applied in the procedure, effecting the movement and penetration of the electrolyte into the interior of the specimen, and thus enhancing the dissolution process.
摘要翻译：本发明是用于铝合金的动态深蚀刻和粒子提取的程序，适用于铝合金制品的质量控制，以及使用扫描和透射电子显微镜以及X射线衍射的铝合金研究。该方法的各个阶段的模式和顺序使得铝基质能够通过使用由碘，酒石酸和甲醇组成的溶液在样品的整个体积内均匀溶解，其中组分具有根据样品尺寸确定的浓度。在这方面重要的是，溶液仅在特定位置渗透到样品的内部，并且表面氧化物层保持紧凑。在该过程中应用超声波装置，使电解质进入样品内部的运动和穿透，从而增强溶解过程。

18. 发明公开

EP1649322A4 PLANARIZATION FILMS FOR ADVANCED MICROELECTRONIC APPLICATIONS AND DEVICES AND METHODS OF PRODUCTION THEREOF 审中-公开
标题翻译：平坦化膜晚期微电撕扯应用和机构及其制造方法
公开(公告)号：EP1649322A4
公开(公告)日：2007-09-19
申请号：EP03777970
申请日：2003-10-27
申请人： HONEYWELL INT INC
发明人： HUANG WEI , KENNEDY JOSEPH , KATSANES RONALD
IPC分类号： G03C1/00 , B05D5/12 , B32B27/42 , C08J3/00 , C08J7/02
CPC分类号： C08J7/02 , C04B26/12 , C04B2111/00482 , C08J2361/00 , C23F1/10 , C23F1/44 , C23F3/00 , C23F3/04 , H01L21/31051 , H01L21/312 , Y10T428/31942 , C04B2103/0093 , C04B2103/40
摘要： A planarization composition is disclosed herein that comprises: a) a structural constituent; and b) a solvent system, wherein the solvent system is compatible with the structural constituent and lowers the lowers at least one of the intermolecular forces or surface forces components of the planarization composition. A film that includes this planarization composition is also disclosed. In addition, another planarization composition is disclosed herein that comprises: a) a cresol-based polymer compound; and b) a solvent system comprising at least one alcohol and at least one ether acetate-based solvent. A film that includes this planarization composition is also disclosed. A layered component is also disclosed herein that comprises: a) a substrate having a surface topography; and b) a planarization composition or a film such as those described herein, wherein the composition is coupled to the substrate. Methods of forming a planarization compositions are also disclosed herein that comprise: a) providing a structural constituent; b) providing a solvent system, wherein the solvent system is compatible with the structural constituent and lowers at least one of the intermolecular forces or surface forces components of the planarization composition; and c) blending the structural constituent and the solvent system to form a planarization composition. Methods of forming a film are also disclosed that comprise: a) providing a planarization composition such as those disclosed herein; and b) evaporating at least part of the solvent system to form a film.

19. 发明授权

EP0013492B1 Method of producing tubular boron bodies suitable for use as pick-up cantilevers 失效
标题翻译：生产适合用作吸收器的管状骨架体的方法
公开(公告)号：EP0013492B1
公开(公告)日：1983-03-09
申请号：EP79302865.5
申请日：1979-12-12
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Aoki, Masaki , Yoshida, Shigeru , Yamazoe, Hiroshi , Nagasawa, Masahiro
IPC分类号： H04R1/18 , C01B35/02 , C23C11/00 , C23F1/00
CPC分类号： C23F1/10 , C01B35/02 , C23C16/01 , C23C16/28 , H04R1/18

20. 发明公开

EP0013492A1 Method of producing tubular boron bodies suitable for use as pick-up cantilevers 失效
标题翻译：用于由硼管状物品，适于拾取方法。
公开(公告)号：EP0013492A1
公开(公告)日：1980-07-23
申请号：EP79302865.5
申请日：1979-12-12
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Aoki, Masaki , Yoshida, Shigeru , Yamazoe, Hiroshi , Nagasawa, Masahiro
IPC分类号： H04R1/18 , C01B35/02 , C23C11/00 , C23F1/00
CPC分类号： C23F1/10 , C01B35/02 , C23C16/01 , C23C16/28 , H04R1/18
摘要： The cantilever is a tubular body composed of an inner layer (2') of crystalline or amorphous boron and at least one outer layer (2) of amorphous boron. These and other bodies are made by forming at least one boron layer on a metallic substrate by chemical vapour deposition and removing the substrate from the boron layer(s) to leave the latter as a self-supporting body, the substrate removal being effected by an etchant comprising a solution (in, for example, an alcohol) of at least one of bromine, iodine, iodine trichloride, iodine monochloride and iodine monobromide.
摘要翻译：悬臂是结晶或无定形硼和无定形硼中的至少一个外层（2）的内层（2分钟）组成的管状体。这些和其他机构通过形成于通过化学气相沉积的金属基板的至少一个硼层和从所述硼层（一个或多个）基片离开后者作为一个自撑体制成，基板除去由在实现包括溴，碘，三氯化碘，一氯化碘和一溴化碘中的至少一种的蚀刻剂溶液（以，例如，醇）。

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