专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

EP1376669B1 PLASMA PROCESSING DEVICE 有权
标题翻译：装置的等离子体过程
公开(公告)号：EP1376669B1
公开(公告)日：2007-05-09
申请号：EP02708711.3
申请日：2002-03-28
申请人： OHMI, Tadahiro , TOKYO ELECTRON LIMITED
发明人： OHMI, Tadahiro , HIRAYAMA, Masaki, c/o New Ind. Creation Hatch.Cent , SUGAWA, Shigetoshi, c/o Manag. of Science & Techn. , GOTO, Tetsuya, c/o NEW IND. CR. HATCHERY CTER
IPC分类号： H01L21/31 , H05H1/46 , H01L21/3065 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： A micro wave plasma processing device, wherein a tapered surface for relieving a variation in impedance and a member having an intermediate dielectric constant are installed between a micro wave feeding wave guide and a micro wave antenna, whereby the formation of reflected wave at the connection part between the micro wave feeding wave guide and the micro wave antenna can be suppressed to increase a power feeding efficiency and suppress discharge so as to stabilize the formation of plasma in the plasma processing device.

12. 发明授权

EP1026566B1 VERSATILE FLOW RATE CONTROLLER 有权
标题翻译：柔性流动调节器
公开(公告)号：EP1026566B1
公开(公告)日：2005-10-26
申请号：EP99935121.6
申请日：1999-08-09
申请人： FUJIKIN INCORPORATED , TOKYO ELECTRON LIMITED , OHMI, Tadahiro
发明人： OHMI, Tadahiro , KAGATSUME, Satoshi, Tokyo Electron Yamanashi Ltd. , HIROSE, Jun, Tokyo Electron Yamanashi Ltd. , NISHINO, Kouji, Fujikin Incorporated
IPC分类号： G05D7/06
CPC分类号： G05D7/0658 , G05D7/0635 , Y10T137/7759 , Y10T137/7761
摘要： A versatile flow rate controller comprises an orifice (8) exchangeable depending on the required opening for a different fluid and a different flow rate range, a control valve (2) on the upstream side, a pressure detector (6) between the control valve (2) and the orifice (8), an arithmetic circuit (14) for calculating a flow rate as Qc=KP1 (K is a constant) from an upstream pressure P1 detected by the detector (6); an output circuit (16) for providing a flow-setting signal Qe, a converter circuit (18) for producing a flow rate signal Qf (Qf=kQc) by multiplying the calculated flow rate signal Qc by a factor k to change the full-scale flow rate, and a control circuit (20) for supplying a driver section (4) of the control valve (2) with a control signal Qy corresponding to the difference between the Qf and Qe.

13. 发明授权

EP1001326B1 GAS SUPPLY EQUIPMENT WITH PRESSURE TYPE FLOW RATE CONTROL DEVICE 有权
标题翻译：有压敏流动调节装置气体供给机构
公开(公告)号：EP1001326B1
公开(公告)日：2005-08-31
申请号：EP99922553.5
申请日：1999-05-27
申请人： FUJIKIN Inc. , TOKYO ELECTRON LIMITED , OHMI, Tadahiro
发明人： OHMI, Tadahiro , KAGATSUME, Satoshi , IKEDA, Nobukazu , NISHINO, Kouji , YOSHIKAWA, Kazuhiro , IDETA, Eiji , DOHI, Ryousuke , UNO, Tomio , YAMAJI, Michio
IPC分类号： G05D7/06
CPC分类号： G05D7/0635 , Y10T137/7759 , Y10T137/7761
摘要： A gas supply equipment comprising a gas control valve (2), an orifice accommodating valve (9) provided downstream of the control valve (2), a pressure detector (3) provided between the control valve (2) and the orifice accommodating valve (9), an orifice (5) provided downstream of the valve mechanism of the orifice accommodating (9) and an arithmetic and control unit which calculates a flow rate as Qc = KP1 (K; constant) from a detected pressure P1 by the pressure detector (3) and outputs to the drive unit of the control valve (2) the difference between a flow rate instruction signal Qs and a calculated flow rate Qc as a control signal Qy.

14. 发明公开

EP1376670A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译： PLASMAVERARBEITUNGSEINRICHTUNG
公开(公告)号：EP1376670A1
公开(公告)日：2004-01-02
申请号：EP02708713.9
申请日：2002-03-28
申请人： Tokyo Electron Limited , Ohmi, Tadahiro
发明人： OHMI, Tadahiro , HIRAYAMA, Masaki School of Engineering Tohoku Uni. , SUGAWA, S., School of Engineering Tohoku Univers. , GOTO, Tetsuya, School of Engineering Tohoku Uni.
IPC分类号： H01L21/31 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32238
摘要： In a microwave plasma processing apparatus, a shower plate or plasma transmission window facing a substrate to be processed is formed to have a concaved surface at a side facing the substrate to be processes for compensating for a decrease of plasma density in the peripheral region of the substrate to be processed. As a result, stable and uniform plasma is maintained in the vicinity of the surface of the substrate to be processed even in the case a low pressure plasma process such as etching is conducted. Further, such a construction facilitates plasma ignition.
摘要翻译：在微波等离子体处理装置中，形成面向待处理基板的喷淋板或等离子体透射窗，以在面向基板的一侧具有凹面，以补偿在该外围区域的等离子体密度的降低待处理的基材。结果，即使在进行诸如蚀刻的低压等离子体处理的情况下，也能够在待加工的基板的表面附近保持均匀的等离子体。此外，这种结构有助于等离子体点火。

15. 发明公开

EP1126260A1 PRESSURE DETECTOR MOUNTING STRUCTURE 审中-公开
标题翻译： BEFESTIGUNGSANORDNUNG EINES DRUCKSENSOR
公开(公告)号：EP1126260A1
公开(公告)日：2001-08-22
申请号：EP00949991.4
申请日：2000-08-03
申请人： Fujikin Incorporated , TOKYO ELECTRON LIMITED , Ohmi, Tadahiro
发明人： OHMI, Tadahiro , HIROSE, Takashi, Fujikin Incorporated , IDETA, Eiji, Fujikin Incorporated , IKEDA, Nobukazu, Fujikin Incorporated , DOHI, Ryousuke, Fujikin Incorporated , NISHINO, Kouji, Fujikin Incorporated , YOSHIKAWA, Kazuhiro, Fujikin Incorporated , KAGATSUME, Satoshi, Tokyo Electron Yamanashi Ltd. , HIROSE, Jun, Tokyo Electron Yamanashi Ltd. , FUKASAWA, Kazuo, Tokyo Electron Yamanashi Ltd. , KOIZUMI, Hiroshi, Tokyo Electron Yamanashi Ltd. , NAGAOKA, Hideki, Tokyo Electron Yamanashi Ltd.
IPC分类号： G01L19/00 , G01L7/08
CPC分类号： G01L19/0023 , G01L19/0645 , G01L19/145 , G01L19/147
摘要： A construction for mounting a pressure detector prevents the detector diaphragm from being strained by stress applied to the pressure detector as the detector is mounted in a fixture main body provided in a pipe line or the like, thereby keeping the output characteristics and temperature characteristics of the detector from greatly differing before and after the mounting. The pressure detector is constructed by combining and fastening together a diaphragm base having a diaphragm and a sensor base having a sensor element therein that is activated by displacement of the diaphragm base. The pressure detector, with a gasket placed thereunder, is disposed in a mounting hole of a fixture main body that is mounted in a pipe line. The pressure detector is airtightly pressed and fastened by a presser member inserted from above in the mounting hole. The presser member is brought in contact with a block upper surface of the diaphragm base, and the gasket is also brought in contact with the block lower surface of the diaphragm base. A shallow groove is defined in the form of a ring on the lower surface of the block at a place inward of the portion contacting the metal gasket so that the shallow groove absorbs strain caused by the presser member.
摘要翻译：用于安装压力检测器的结构防止了检测器膜片被施加到压力检测器上的应力而被应变，因为检测器安装在设置在管线等中的夹具主体中，从而保持了输出特性和温度特性检测器在安装前后有很大差异。压力检测器通过将具有隔膜的隔膜基座和具有传感器元件的传感器基座组合并紧固在一起而构成，该传感器基座通过隔膜基座的位移而被激活。压力检测器，其上放置有垫圈，设置在安装在管道中的固定器主体的安装孔中。压力检测器通过从安装孔中从上方插入的压紧构件气密地按压并紧固。压板构件与隔膜基座的块上表面接触，并且垫圈也与隔膜基座的块下表面接触。在与金属垫片接触的部分的内侧的位置处，在块的下表面上以环的形式形成浅槽，使得浅槽吸收由压紧构件引起的应变。

16. 发明公开

EP1026566A1 VERSATILE FLOW RATE CONTROLLER 有权
标题翻译：柔性纤维素
公开(公告)号：EP1026566A1
公开(公告)日：2000-08-09
申请号：EP99935121.6
申请日：1999-08-09
申请人： Fujikin Incorporated , TOKYO ELECTRON LIMITED , OHMI, Tadahiro
发明人： OHMI, Tadahiro , KAGATSUME, Satoshi, Tokyo Electron Yamanashi Ltd. , HIROSE, Jun, Tokyo Electron Yamanashi Ltd. , NISHINO, Kouji, Fujikin Incorporated
IPC分类号： G05D7/06
CPC分类号： G05D7/0658 , G05D7/0635 , Y10T137/7759 , Y10T137/7761
摘要： A fluid-switchable flow rate control system that permits free changing of the full scale flow rate and which can control a plurality of kinds of fluids with high precision.
The fluid-switchable flow rate control system controls the flow rate of fluid with the pressure P 1 on the upstream side of the orifice member held about twice or more higher than the downstream pressure P 2 , the fluid-switchable flow rate control system comprising an orifice member 8 replaceable with another to provide a suitable orifice diameter according to the kind of fluid and the flow rate range, a control valve 2 provided on the upstream side thereof, a pressure detector 6 provided between the control valve 2 and the orifice member 8, and a flow rate calculation circuit 14 where, from the pressure P 1 detected by the pressure detector, the flow rate Qc is calculated by the equation Qc = KP 1 (K: constant), a flow rate-setting circuit 16 for outputting flow rate setting signal Qe, a flow rate conversion circuit 18 for multiplying the calculated flow rate signal Qc by the flow rate conversion rate k into switch-over calculated flow rate signal Qf ( Qf = kQc ) to change the full scale flow rate, and a calculation control circuit 20 to output the difference between the switch-over calculation flow rate signal Qf and the flow rate setting signal Qe as control signal Qy to the drive 4 of the control valve 2, thereby opening or closing the control valve to bring the control signal Qy to zero, thus controlling the flow rate on the downstream side of the orifice member.
摘要翻译：一种可流体切换的流量控制系统，其允许满量程流量的自由变化并且可以高精度地控制多种流体。流体切换流量控制系统控制流体的流量，其中孔口部件的上游侧的压力P1保持在比下游压力P2大约两倍或更多的高度，流体可切换流量控制系统包括孔口部件 8可替换为另一个，以根据流体种类和流量范围提供合适的孔径，设置在其上游侧的控制阀2，设置在控制阀2和孔口构件8之间的压力检测器6，以及流量计算电路14，其中根据由压力检测器检测到的压力P1通过公式Qc = KP1（K：常数）计算流量Qc;流量设定电路16，用于输出流量设定信号Qe ，用于将计算出的流量信号Qc乘以流量转换率k的流量转换电路18转换为切换计算流量信号Qf（Qf = kQc），以改变满量程fl 以及将切换计算流量信号Qf和流量设定信号Qe之间的差作为控制信号Qy输出到控制阀2的驱动器4的计算控制电路20，由此打开或关闭控制使控制信号Qy为零，从而控制孔构件下游侧的流量。

17. 发明授权

EP1741802B1 FILM-FORMING APPARATUS AND FILM-FORMING METHOD 有权
公开(公告)号：EP1741802B1
公开(公告)日：2013-08-21
申请号：EP05727877.2
申请日：2005-03-29
申请人： Ohmi, Tadahiro , TOKYO ELECTRON LIMITED
发明人： OHMI, Tadahiro , MATSUOKA, Takaaki, TOKYO ELECTRON LIMETED
IPC分类号： C23C14/24 , C23C14/12 , C23C16/448 , H05B33/10 , H05B33/28
CPC分类号： C23C14/541 , C23C14/12 , C23C14/228 , C23C14/243 , C23C14/564 , F28D2021/0077 , F28F9/026 , F28F13/08

18. 发明授权

EP1403913B1 SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD 有权
标题翻译：基板处理装置及基板处理方法
公开(公告)号：EP1403913B1
公开(公告)日：2008-04-23
申请号：EP02743801.9
申请日：2002-07-03
申请人： Ohmi, Tadahiro , TOKYO ELECTRON LIMITED
发明人： OHMI, Tadahiro , SUGAWA, Shigetoshi, Tohoku University , HIRAYAMA, Masaki, Ind. Creation Hatchery Ctr.Tohoku Univ. , GOTO,Tetsuya, New Ind. Creation Hatchery Ctr.Tohoku Univ.
IPC分类号： H01L21/324 , H01L21/00 , H01L21/30 , H01L21/32
CPC分类号： H01L21/67115 , H01L21/3003 , H01L21/324 , H01L21/67098 , H01L21/67109 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78603
摘要： A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.

19. 发明授权

EP0931941B1 ORIFICE FOR PRESSURE TYPE FLOW RATE CONTROL UNIT AND PROCESS FOR MANUFACTURING ORIFICE 有权
标题翻译：流量控制器与压力控制及其制造方法NOZZLE
公开(公告)号：EP0931941B1
公开(公告)日：2005-12-28
申请号：EP98937820.3
申请日：1998-08-13
申请人： FUJIKIN Inc. , TOKYO ELECTRON LIMITED , OHMI, Tadahiro
发明人： OHMI, Tadahiro , KAGAZUME, Tetu-Tokyo Electron Yamanashi Ltd. , SUGIYAMA, Kazuhiko-Tokyo Electron Yamanashi Ltd. , FUKADA, Osamu-Kabushiki-Kaisha Fujikin , OZAWA, Susumu-Kabushiki-Kaisha Fujikin , SATOU, Yoshihiro-Kabushiki-Kaisha Fujikin , DOHI, Ryousuke-Kabushiki-Kaisha Fujikin , UNO, Tomio-Kabushiki-Kaisha Fujikin , NISHINO, Kouji-Kabushiki-Kaisha Fujikin , FUKUDA, Hiroyuki-Kabushiki-Kaisha Fujikin , IKEDA, Nobukazu-Kabushiki-Kaisha Fujikin , YAMAJI, Michio-Kabushiki-Kaisha Fujikin
IPC分类号： F15D1/08 , B23P15/16 , G01F1/42
CPC分类号： G01F1/40 , G05D7/0186
摘要： An orifice for use in pressure type flow rate control unit which can be manufactured easily and inexpensively, and which has a linear relationship between pressure P1 upstream of the orifice and the flow rate over a wide range of pressure ratio P2/P1 (where P1 is the pressure upstream of the orifice and P2 is the pressure downstream of same), with the flow rate characteristic relationship among a plurality of orifices being easily adjustable. More specifically, the orifice has a structure comprising a tapered inlet section (1) wherein one open end of a bottom hole (6) bored into a main body member (D) is cut into a shape like the mouthpiece of a trumpet, and a short drawn parallel part (2) continuing therefrom; and a short expanded tapered section (3) formed by expanding the diameter of the other open end of the bottom hole (6) and continuing from the drawn parallel part (2), and an expanded parallel part (4) continuing therefrom.

20. 发明公开

EP1585002A1 FLOW CONTROL METHOD FOR CLUSTERING FLUID AND FLOW CONTROL DEVICE FOR CLUSTERING FLUID 审中-公开
标题翻译：流量控制方法FLUIDCLUSTERUNG和流量控制装置FLUIDCLUSTERUNG
公开(公告)号：EP1585002A1
公开(公告)日：2005-10-12
申请号：EP04702837.8
申请日：2004-01-16
申请人： FUJIKIN INCORPORATED , OHMI, Tadahiro , TOKYO ELECTRON LIMITED
发明人： OHMI, Tadahiro , SUGIYAMA, Kazuhiko , MIZUSAWA, Kenetu, c/o Tokyo Electron Ltd , TAKAHASHI, Eiji, c/o Tokyo Electron Ltd , UNO, Tomio, c/o Fujikin Incorporated , NISHINO, Kouji, c/o Fujikin Incorporated , DOHI, Ryousuke, c/o Fujikin Incorporated , IKEDA, Nobukazu, c/o Fujikin Incorporated , NAGASE, Masaaki, c/o Fujikin Incorporated
IPC分类号： G05D7/06
CPC分类号： H01L21/67023 , G05D7/0635 , Y10T137/6416 , Y10T137/6606 , Y10T137/7761
摘要： A high precision flow rate control of a clustering fluid such as the HF gas and the like to be supplied to a vacuum chamber and the like is made possible in the flow rate range of 3∼300SCCM using a pressure type flow rate control device.
Specifically, disclosed herein is a method of controlling the flow rate of the clustering fluid using a pressure type flow rate control device in which the flow rate Q of the gas passing through an orifice is computed as K=KP 1 (where K is a constant) with the gas being in a state where the ratio P 2 /P 1 between the gas pressure P 1 on the upstream side of the orifice and the gas pressure P 2 on the downstream side of the orifice is held at a value not higher than the critical pressure ratio of the gas wherein the association of molecules is dissociated either by heating the afore-mentioned pressure type flow rate control device to the temperature higher than 40°C, or by applying the diluting gas to the clustering fluid to make it lower than a partial pressure so that the clustering fluid is permitted to pass through the afore-mentioned orifice in a monomolecular state.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式