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11. 发明授权

EP2333826B1 MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING SAME 有权
标题翻译：磁性存储元件和使用相同的存储设备
公开(公告)号：EP2333826B1
公开(公告)日：2014-09-03
申请号：EP09811360.8
申请日：2009-07-08
申请人： Fuji Electric Co., Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , H01L21/314 , H01L23/28 , H01L27/105 , H01L43/08 , G11C11/16 , H01F10/32 , H01L23/495
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01L23/49503 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12 , H01L2924/0002 , H01L2924/00

12. 发明公开

EP2722903A1 STRONGLY CORRELATED OXIDE FIELD EFFECT ELEMENT 有权
标题翻译： FELDEFFEKTBAUELEMENT MIT STARK KORRELIERTEM OXID
公开(公告)号：EP2722903A1
公开(公告)日：2014-04-23
申请号：EP12800072.6
申请日：2012-05-11
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： H01L49/00 , H01L21/336 , H01L29/786 , H01L45/00
CPC分类号： H01L29/517 , H01L29/78 , H01L29/7869 , H01L29/78696 , H01L49/003
摘要： Provided is a strongly correlated oxide field effect element demonstrating a phase transition and a switching function induced by electrical means. The strongly correlated oxide field effect element is a strongly correlated oxide field effect element 100 including a channel layer 2 constituted by a strongly correlated oxide film, a gate electrode 14, a gate insulating layer 31, a source electrode 42, and a drain electrode 43. The channel layer 2 includes an insulator-metal transition layer 22 of a strongly correlated oxide and a metallic state layer 21 of a strongly correlated oxide that are stacked on each other. The thickness t of the channel layer 2, the thickness t1 of the insulator-metal transition layer 22, and the thickness t2 of the metallic state layer 21 satisfy the following relationship with critical thicknesses t1c and t2c for respective metallic phases of the layers: t = t1 + t2 ≥ t1c > t2c, where t1
摘要翻译：提供了一种强相关的氧化物场效应元件，其表现出由电气手段引起的相变和开关功能。强相关氧化物场效应元件是强相关氧化物场效应元件100，其包括由强相关氧化膜构成的沟道层2，栅电极14，栅极绝缘层31，源电极42和漏电极43 沟道层2包括彼此堆叠的强相关氧化物的绝缘体 - 金属过渡层22和强相关氧化物的金属状态层21。沟道层2的厚度t，绝缘体 - 金属过渡层22的厚度t1和金属状态层21的厚度t2满足与层的各个金属相的临界厚度t1c和t2c的关系：t = t1 + t2‰¥t1c> t2c，其中t1

13. 发明公开

EP2698455A1 PEROVSKITE-TYPE MANGANESE OXIDE THIN FILM 审中-公开
标题翻译： PEROVSKITE型氧化锰薄膜
公开(公告)号：EP2698455A1
公开(公告)日：2014-02-19
申请号：EP12772040.7
申请日：2012-03-02
申请人： Fuji Electric Co. Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： C30B29/22 , C01G23/00 , C01G45/00 , C23C14/08 , C23C14/28 , G11C13/00 , H01L21/316 , H01L27/105 , H01L29/82 , H01L43/08 , H01L45/00 , H01L49/00
CPC分类号： C01G45/1264 , C01G45/02 , C01G45/12 , C01G45/1214 , C01P2002/34 , C01P2002/50 , C01P2002/77 , C01P2004/03 , C23C14/0021 , C23C14/08 , C30B23/025 , C30B29/22 , C30B29/24 , G11C13/0004 , H01L21/02197 , H01L21/02266 , H01L29/045 , H01L29/24 , H01L45/04 , H01L45/147
摘要： Provided is a thin film that thoroughly exploits the resistance changes caused by charge and orbital ordering in a perovskite manganese oxide. One mode of the present invention provides a perovskite manganese oxide thin film 3 formed on an (m10) oriented (19 ≥ m ≥ 2) substrate 2 and containing Ba and a rare earth element (Ln) in the A sites of the perovskite crystal lattice, wherein the atomic planes are stacked in a LnO-MnO 2 -BaO-MnO 2 -LnO pattern in the [100] axis direction.
摘要翻译：提供一种充分利用钙钛矿锰氧化物中电荷和轨道排序引起的电阻变化的薄膜。本发明的一种模式提供了在（m10）取向的（19≥m≥2）衬底2上形成的钙钛矿锰氧化物薄膜3，其在钙钛矿晶格的A位中含有Ba和稀土元素（Ln）其中原子平面在[100]轴方向上以LnO-MnO2-BaO-MnO2-LnO图案堆叠。

14. 发明授权

EP2306540B1 SPIN VALVE RECORDING ELEMENT AND STORAGE DEVICE 有权
标题翻译：自旋阀，记录部件和储存的装置
公开(公告)号：EP2306540B1
公开(公告)日：2014-08-27
申请号：EP08810128.2
申请日：2008-09-05
申请人： Fuji Electric Co., Ltd.
发明人： KAWAKAMI, Haruo , OGIMOTO, Yasushi
IPC分类号： G11C11/15 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11C11/161 , G11C11/1675 , G11C11/5607 , G11C19/0808 , H01F10/325 , H01F10/3254 , H01F10/3286 , Y10T428/1107 , Y10T428/1143

15. 发明授权

EP2320489B1 SPIN VALVE ELEMENT AND ITS DRIVING METHOD AND STORAGE DEVICE EMPLOYING THEM 有权
标题翻译：自旋阀元素和方法，用于控制和存储器布置这些元素
公开(公告)号：EP2320489B1
公开(公告)日：2014-05-14
申请号：EP08810131.6
申请日：2008-09-05
申请人： Fuji Electric Co., Ltd.
发明人： KAWAKAMI, Haruo , OGIMOTO, Yasushi
IPC分类号： H01L43/08 , G11C11/16 , B82Y25/00
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01F10/325 , H01F10/3254 , H01F10/3286
摘要： Provided is a spin valve element (1) capable of performing multi-value recording, which includes a pair of ferromagnetic layers 23 and 25 having different coercivities that sandwich an insulating layer 24 or a non-magnetic layer 51, wherein the ferromagnetic layer 25 having small coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions IN, I E , I W , and I S are included. In addition, a storage device (10) is manufactured by using such a spin valve element.

16. 发明授权

EP2306510B1 MAGNETIC MEMORY ELEMENT AND ITS DRIVING METHOD AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁存储元件和控制非易失性存储设备的方法和
公开(公告)号：EP2306510B1
公开(公告)日：2013-01-23
申请号：EP08810130.8
申请日：2008-09-05
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi , KAWAKAMI, Haruo
IPC分类号： G11C11/16 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , G11C11/56 , H01F10/32 , B82Y25/00
CPC分类号： H01F10/3295 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01F10/133 , H01F10/3268 , H01F10/3286 , H01L27/224 , H01L43/08 , Y10T428/1107 , Y10T428/1143

17. 发明公开

EP2479787A1 MAGNETORESISTIVE ELEMENT AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING SAME 有权转让
标题翻译：磁阻元件和非易失性半导体存储装置
公开(公告)号：EP2479787A1
公开(公告)日：2012-07-25
申请号：EP10816986.3
申请日：2010-08-04
申请人： Fuji Electric Co., Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： H01L43/12 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element.
A magnetoresistance element 1-1 includes a magnetic tunnel junction portion 13 configured by sequentially stacking a perpendicularly magnetized first magnetic body 22, an insulation layer 21, and a perpendicularly magnetized second magnetic body 200. The second magnetic body 200 has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer 21 side interface. A heat assist layer 28-1 that heats the second magnetic body 200 with a heat generated based on a current flowing through the magnetic tunnel junction portion 13 is further provided, and the magnetization direction of the second magnetic body 200 is reversed by the heating of the second magnetic body 200. A non-volatile semiconductor storage device 10-1 includes the magnetoresistance element 1-1, a switching element connected in series to the magnetoresistance element 1-1, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element 1-1, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element 1-1.

18. 发明公开

EP2375464A1 MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME 失效转让
标题翻译：磁力元素在SPEICHERANORDNUNG DAMIT
公开(公告)号：EP2375464A1
公开(公告)日：2011-10-12
申请号：EP09834596.0
申请日：2009-10-02
申请人： Fuji Electric Co., Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/126 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/10 , H01L43/12
摘要： The present invention provides a magnetic memory element having a memory cell of size 4F 2 which realizes crosspoint-type memory. In a magnetic memory element 100, a first magnetic layer 22, a third magnetic layer (spin polarization enhancement layer) 27, an intermediate layer 21, a fourth magnetic layer (spin polarization enhancement layer) 26, and a second magnetic layer 20 are stacked in order. The intermediate layer 21 is made of an insulating material or a nonmagnetic material. The second magnetic layer 20 comprises a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer 22 comprises a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.
摘要翻译：本发明提供一种具有大小为4F 2的存储单元的磁存储元件，其实现交叉点型存储器。在磁存储元件100中，堆叠第一磁性层22，第三磁性层（自旋极化增强层）27，中间层21，第四磁性层（自旋极化增强层）26和第二磁性层20 为了。中间层21由绝缘材料或非磁性材料制成。第二磁性层20包括钆，铁和钴的三元合金，钆和钴的二元合金，或铽和钴的二元合金。或者，第一磁性层22包括铽，铁和钴的三元合金，或铽和钴的二元合金。

19. 发明公开

EP2355142A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE STORAGE DEVICE 有权
标题翻译： MAGNETISCHES SPEICHERELEMENT UND NICHTFLÜCHTIGESPEICHERVORRICHTUNG DAMIT
公开(公告)号：EP2355142A1
公开(公告)日：2011-08-10
申请号：EP09830245.8
申请日：2009-08-25
申请人： Fuji Electric Co., Ltd
发明人： OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： The present invention provides a magnetic memory element (8) that has a spin valve structure formed using a free layer (5), a non-magnetic layer (4), and a pinned layer (3). The free layer (5) has a three-layer structure having a first magnetic layer (51), an intermediate layer (52), and a second magnetic layer (53) arranged in this order viewed from the non-magnetic layer (4). The first magnetic layer (51) is made of a ferromagnetic material. The intermediate layer (52) is made of a non-magnetic material. The second magnetic layer (53) is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point T comp .
摘要翻译：本发明提供一种具有使用自由层（5），非磁性层（4）和钉扎层（3）形成的自旋阀结构的磁存储元件（8）。自由层（5）具有从非磁性层（4）观察的依次排列的第一磁性层（51），中间层（52）和第二磁性层（53）的三层结构，。第一磁性层（51）由铁磁材料制成。中间层（52）由非磁性材料制成。第二磁性层（53）由在存储器存储操作可用的温度范围内具有磁补偿点的N型铁磁材料制成。第一磁性层的磁化方向和第二磁性层的磁化方向在低于磁补偿点T comp的温度下彼此平行。

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