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11. 发明公开

EP1063692A1 Process for depositing a low dielectric constant film 审中-公开
标题翻译： Verfahren zur Abscheidung eines Films mit niedrigerDielektrizitätskonstante
公开(公告)号：EP1063692A1
公开(公告)日：2000-12-27
申请号：EP00112820.6
申请日：2000-06-16
申请人： Applied Materials, Inc.
发明人： Moghadam, Farhad , Cheung, David W. , Yieh, Ellie , Xia, Li-Qun , Yau, Wai-Fan , Lang, Chi-I , Jeng, Shin-Puu , Gaillard, Frederick , Venkataraman, Shankar , Nemani, Srinivas D.
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31053 , H01L21/3122 , H01L21/31604 , H01L21/31612 , H01L21/76828 , H01L21/76834
摘要： A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400°C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micrometer devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40°C onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.
摘要翻译：一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残留的碳并且可用于间隙填充层，预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。羟基化合物可以在从水或有机化合物沉积之前制备。氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

12. 发明授权

EP1073108B1 Chemical vapor deposition process for dielectric material 有权
标题翻译：用于制备介电材料的化学气相沉积法
公开(公告)号：EP1073108B1
公开(公告)日：2008-03-12
申请号：EP00306321.1
申请日：2000-07-25
申请人： APPLIED MATERIALS, INC.
发明人： Wang, Yaxin , Chan, Diana , Sahin, Turgut , Ishikawa, Tetsuya , Moghadam, Farhad
IPC分类号： H01L21/316 , C23C16/40 , C23C16/455
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/455 , H01J37/3244 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/31625 , H01L21/31629

13. 发明公开

EP1607493A3 Plasma processes for depositing low dielectric constant films 有权
标题翻译： Plasmaabscheidungsprozesse bei dielektrischen Filmen mit geringerDielektrizitätskonstante
公开(公告)号：EP1607493A3
公开(公告)日：2007-07-04
申请号：EP05014450.0
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： Cheung, David , Yau, Wai-Fan , Mandal, Robert P. , Jeng, Shin-Puu , Liu, Kuo-Wei , Lu, Yung-Cheng , Barnes, Mike , Willecke, Ralf B. , Moghadam, Farhad , Ishikawa, Tetsuya , Poon, Tze
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031
摘要： A method for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH 3 SIH 3 , dimethylsilane, (CH 3 ) 2 SiH 2 , or 1,1,3,3-tetramethyldisiloxane, (CH 3 ) 2 -SiH-O-SiH-(CH 3 ) 2 , and nitrous oxide, N 2 O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30% of the duty cycle.
摘要翻译：一种通过有机硅化合物和氧化气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法或约20W至约500W的脉冲RF功率水平的方法。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以有助于控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它电介质层的衬垫或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也提供不同介电层之间优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SIH 3，二甲基硅烷，（CH 3）2 SiH 2或1,1,3,3-四甲基二硅氧烷，（CH 3）2 -SiH-O-SiH- （CH 3）2和一氧化二氮N 2 O，在约10W至约150W的恒定RF功率水平下，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

14. 发明公开

EP1164632A3 Method of forming a fluoro-organosilicate layer on a substrate 审中-公开
标题翻译：制造的基板的氟有机硅酸盐层上的方法
公开(公告)号：EP1164632A3
公开(公告)日：2004-08-11
申请号：EP01112909.5
申请日：2001-06-05
申请人： Applied Materials, Inc.
发明人： Barnes, Michael , M'Saad, Hichem , Nguyen, Huong Thanh , Moghadam, Farhad
IPC分类号： H01L21/316 , C23C16/30 , C23C16/40 , H01L21/312
CPC分类号： H01L21/02131 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/3127 , H01L21/31629
摘要： A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.

15. 发明公开

EP1164632A2 Method of forming a fluoro-organosilicate layer on a substrate 审中-公开
标题翻译： Methode，auf einem Substrat eine Fluororganische-Silikatschicht herzustellen
公开(公告)号：EP1164632A2
公开(公告)日：2001-12-19
申请号：EP01112909.5
申请日：2001-06-05
申请人： Applied Materials, Inc.
发明人： Barnes, Michael , M'Saad, Hichem , Nguyen, Huong Thanh , Moghadam, Farhad
IPC分类号： H01L21/312
CPC分类号： H01L21/02131 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/3127 , H01L21/31629
摘要： A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了一种使用氟 - 有机硅酸盐层形成集成电路的方法。氟 - 有机硅酸盐层通过向包含氟 - 有机硅烷化合物和氧化气体的气体混合物施加电场而形成。氟 - 有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，氟 - 有机硅酸盐层用作硬掩模。在另一个集成电路制造工艺中，氟 - 有机硅酸盐层被结合到镶嵌结构中。

16. 发明公开

EP1124252A2 Apparatus and process for processing substrates 审中-公开
标题翻译： Verfahren und Vorrichtung zur Verarbeitung von Substraten
公开(公告)号：EP1124252A2
公开(公告)日：2001-08-16
申请号：EP01102400.7
申请日：2001-02-02
申请人： Applied Materials, Inc.
发明人： Ponnekanti, Hari , Fairbairn, Kevin , Somekh, Sasson , Weidman, Timothy , Shamouilian, Shamouil , Moghadam, Farhad
IPC分类号： H01L21/00
CPC分类号： H01L21/67161 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/31695 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/76807
摘要： The present invention generally provides a process and an apparatus for depositing low dielectric constant films and low dielectric constant capping layers on a substrate. The low dielectric constant films are mesoporous oxide films formed by depositing and curing a sol gel precursor containing a surfactant to form a oxide film having interconnecting pores of uniform diameter, and then annealing the film in an inert gas atmosphere or exposing the film to an oxidizing atmosphere containing a reactive oxygen species to form a mesoporous oxide film. A preferred mesoporous oxide film is produced by spin-on deposition of a sol gel precursor containing TEOS, water, and a surfactant in an alcohol based solvent on a substrate, curing the sol gel precursor to form a cubic phase film, and then exposing the film to an oxidizing atmosphere. The apparatus of the invention provides a cassette to cassette processing system which processes multiple substrates and combines the advantages of an atmosphere processing module for depositing films, such as dielectric films, with an in-situ vacuum capping module for high quality substrate processing, high substrate throughput and reduced contamination of the process.
摘要翻译：本发明通常提供了一种用于在衬底上沉积低介电常数膜和低介电常数覆盖层的工艺和设备。低介电常数膜是通过沉积和固化含有表面活性剂的溶胶凝胶前体而形成的介孔氧化物膜，以形成具有均匀直径的互连孔的氧化膜，然后在惰性气体气氛中退火膜或将膜暴露于氧化含有活性氧的气氛形成介孔氧化膜。优选的介孔氧化物膜是通过在基体上在醇类溶剂中将含有TEOS，水和表面活性剂的溶胶凝胶前体旋涂沉积在基材上，固化溶胶凝胶前体以形成立方相膜，然后暴露于电影到氧化气氛。本发明的装置提供一种盒式磁带处理系统，其处理多个基板并结合用于沉积膜的气氛处理模块（例如介电膜）与用于高质量基板处理的原位真空封盖模块的优点，高基板产量和减少过程的污染。

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