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91. 发明公开

EP1643641A3 High-frequency heating device, semiconductor manufacturing device, and light source device 审中-公开
标题翻译：高频加热装置，半导体制造装置和光源装置
公开(公告)号：EP1643641A3
公开(公告)日：2006-05-31
申请号：EP05021264.6
申请日：2005-09-29
申请人： SEIKO EPSON CORPORATION
发明人： Takada, Yutaka , Fujii, Satoshi
IPC分类号： H03H9/02 , H03H9/25 , H03B5/12 , H05B6/66 , H01L23/66 , H05B41/14
CPC分类号： H03B5/326 , H01J37/32192 , H01J37/32201 , H01J37/32266 , H01J37/32302 , H01J37/32311 , H01L21/67115 , H01L2924/0002 , H03H7/18 , H03H9/02582 , H05B6/686 , H05B6/705 , H05B6/806 , Y02B40/143 , H01L2924/00
摘要： A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier, and blocks a reflected wave directed from an object exposed with the microwave; an antenna that irradiates the microwave toward the object; and a metal cavity that traps therein the microwave irradiated to the object.

92. 发明公开

EP1547236A2 VOLTAGE CONTROLLED OSCILLATOR 审中-公开
标题翻译：压控振荡器
公开(公告)号：EP1547236A2
公开(公告)日：2005-06-29
申请号：EP03784352.1
申请日：2003-07-21
申请人： Koninklijke Philips Electronics N.V.
发明人： HEIJDEN, Edwin , VEENSTRA, Hugo
IPC分类号： H03B5/12
CPC分类号： H03B5/1215 , H03B5/1231 , H03B5/1243
摘要： A voltage-controlled oscillator comprising a LC tank circuit (L1, L2, VD1, VD2) coupled to a pair of transistors (T2, T3) and crossed-coupled to a pair of emitter follower transistors (T0, T4) each transistor having a collector, an emitter and a base, the voltage controlled oscillator being characterized in that a supply voltage applied to the collectors of the emitter follower transistors (T0, T4) is substantially different from a supply voltage applied to the bases of the emitter follower transistors (T0, T4).

93. 发明授权

EP1432118B1 Oscillation circuit for television tuner 有权
标题翻译：振荡电路的电视调谐器
公开(公告)号：EP1432118B1
公开(公告)日：2005-03-30
申请号：EP03257217.4
申请日：2003-11-15
申请人： ALPS ELECTRIC CO., LTD.
发明人： Yamamoto, Masaki
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1243

94. 发明公开

EP1496609A1 Enhanced architectures of voltage-controlled oscillators with single inductors (VCO-1L) 审中-公开
标题翻译：改进的架构与单个电感器的电压控制振荡器
公开(公告)号：EP1496609A1
公开(公告)日：2005-01-12
申请号：EP03368069.5
申请日：2003-07-07
申请人： Dialog Semiconductor GmbH
发明人： Sibrai, Andreas , Tchamov, Nikolay
IPC分类号： H03B5/12
CPC分类号： H03B5/1215 , H03B5/1228
摘要： Five circuit topologies of Voltage-Controlled Oscillators with Single Inductor (VCO-1 L) are proposed. They offer lower power consumption, higher output amplitude, broader tuning range, cleaner spectrum and higher frequency stability seen as lower phase-noise. Most of the achievements are based on the development of active pull-down control circuitries of the timing and active charge dissipation in the transistors. The applications of the present invention are of critical importance for wireless communication systems not allowing any limitations in the frequency range. Among them are base stations and mobile terminals/mobile phones, GSM, PCS/DCS, W-CDMA etc., as well BlueTooth, Wireless LAN, Automotive and ISM band etc. The advanced performance of the circuits is based on important architectural specifics and proven by simulation on advanced CMOS process. The architectures are not limited to use on CMOS; they can be efficiently used in any semiconductor process where complimentary polarity transistors are available, for example BiCMOS, SiGe/BiCMOS, GaAs etc.
摘要翻译：与单个电感器（VCO 1L）压控振荡器的五个电路拓扑是提议。它们提供更低的功耗，更高的输出振幅，更广的调谐范围，更清洁频谱和被视为低的相位噪声更高的频率稳定性。大部分成果都是基于晶体管的时机，积极荷消散主动下拉控制线路的开发。本发明的应用是用于不允许在频率范围的任何限制的无线通信系统中的关键重要性。其中是基站和移动终端/移动电话等的电路的先进性能基于重要的架构细节和GSM，PCS / DCS，W-CDMA，等等，以及蓝牙，WiFi，汽车和ISM带通过模拟先进的CMOS工艺成熟。该架构不限于CMOS的使用; 它们可以在任何半导体工艺，其中互补极性晶体管是可用的，例如BiCMOS，硅锗/ BiCMOS工艺，砷化镓等被有效地使用

95. 发明公开

EP1488516A2 DIFFERENTIAL INVERTER CIRCUIT 有权
标题翻译： CMOS-Inverterschaltung
公开(公告)号：EP1488516A2
公开(公告)日：2004-12-22
申请号：EP02788341.2
申请日：2002-12-12
申请人： Koninklijke Philips Electronics N.V.
发明人： BREKELMANS, Johannes, H., A. , KAHLMAN, Josephus, A., H., M. , DE JONG, Gerben, W.
IPC分类号： H03K3/012 , H03F3/45 , H03B5/12
CPC分类号： H03F3/45179 , H03F3/3022 , H03F3/45748 , H03F3/45941 , H03F2203/30015 , H03F2203/45008 , H03F2203/45082 , H03F2203/45292 , H03F2203/45681
摘要： A differential inverter/30) having a differential input for receiving a first input signal(DIN1) and a second input signal(DIN2), said inverter(30) further comprising a differential control input for receiving a first control signal (DC1 and a second control signal(DC2). The differential inverter further comprises a differential output for transmitting a first output signal (OUT1)and a second output signal(OUT2). The differential inverter further comprises a controlled bias generator(10)that generates the second vector of input signals in r esponse to a bias control signal(CIN). The control bias signal(CIN) is generated at an output of a voltage divider(ROS1,ROS2) coupled to the differential output of the differential inverter (30)said bias control signal(CIN) being indicative for a DC voltage of the of the differential output.

96. 发明公开

EP0998023A4 OSCILLATOR 审中-公开
标题翻译： OSZILLATOR
公开(公告)号：EP0998023A4
公开(公告)日：2004-12-15
申请号：EP99919523
申请日：1999-04-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MUTO MASAKI , MOCHIDA YOSHIHISA
IPC分类号： H03B5/32 , H03B5/12 , H03B5/36 , H01L27/06
CPC分类号： H03B5/368 , H03B5/364 , H03B5/366
摘要： An oscillator which is used for a portable telephone or the like, comprises a transistor fabricated by MOS process, and entails a low level of noise other than the desired oscillation frequency. The oscillator includes quartz oscillating element (1) and a first amplifier (3) connected between input and output terminals (4, 2). The first amplifier (3) has a first P-type transistor (11) and a first N-type transistor (12) both fabricated by MOS process. A gate (23) of the first P-type transistor (11) spans between a P-type source diffused region (22) and a P-type drain diffused region (21). A gate of the first N-type transistor (12) spans between an N-type source diffused region (18) and an N-type drain diffused region (19). The span of the gate (20) of the first N-type transistor (12) is longer than that of the gate (23), and the field strength is low, thereby lowering the noise level other than the oscillation frequency.
摘要翻译：用于便携式电话等的振荡器包括通过MOS工艺制造的晶体管，并且除了期望的振荡频率之外还具有低水平的噪声。该振荡器包括石英振荡元件（1）和连接在输入和输出端子（4,2）之间的第一放大器（3）。第一放大器（3）具有通过MOS工艺制造的第一P型晶体管（11）和第一N型晶体管（12）。第一P型晶体管（11）的栅极（23）跨越P型源极扩散区（22）与P型漏极扩散区（21）之间。第一N型晶体管（12）的栅极跨越N型源极扩散区（18）与N型漏极扩散区（19）之间。第一N型晶体管（12）的栅极（20）的跨度比栅极（23）的跨度长，并且场强低，从而降低了振荡频率以外的噪声电平。

97. 发明授权

EP1299941B1 OSZILLATORSCHALTUNG 有权
标题翻译：振荡器电路
公开(公告)号：EP1299941B1
公开(公告)日：2004-11-03
申请号：EP00949454.3
申请日：2000-08-04
申请人： Synergy Microwave Corporation
发明人： ROHDE, Ulrich L. , DANZEISEN, Klaus
IPC分类号： H03B5/12 , H03B5/04
CPC分类号： H03B5/04 , H03B5/1203 , H03B5/1231 , H03B5/124
摘要： The invention relates to an oscillator circuit configuration comprising in an LC-parallel oscillatory circuit and a transistor as an amplifying element. A compensating winding is associated with the parallel oscillatory circuit, whereby the collector voltage of the transistor is fed to said winding in order to compensate the effect of the parasitic collector capacity. Preferably, the collector current from the transistor is maintained constant by an amplifier.

98. 发明授权

EP1211799B1 LC OSCILLATOR 有权
标题翻译： LC振荡器
公开(公告)号：EP1211799B1
公开(公告)日：2004-08-25
申请号：EP99919630.6
申请日：1999-05-18
申请人： Niigata Seimitsu Co., Ltd.
发明人： OKAMOTO, Akira , IKEDA, Takeshi
IPC分类号： H03B5/12 , H03B5/18
CPC分类号： H01L23/5227 , H01L2924/0002 , H03B5/1203 , H03B5/1231 , H01L2924/00
摘要： An LC oscillator capable of oscillating even when it is provided on a substrate has a transistor, a capacitor and an inductance element (30). The inductor element (30) has two upper and lower conductors (1, 2) spirally formed on the front side of a semiconductor substrate (3) and having almost the same shape. Lead wires (6a, 6b) are connected to the outer end (outer peripheral end) and the inner end (center end) of the conductor (1), respectively. The outer end of the conductor (1) is connected to the inner end of the conductor (2) through a connection wire (6c). The conductor (1) functions as an inductor conductor and is connected to another component of the LC oscillator provided on the semiconductor substrate (3) through the lead wires (6a, 6b).
摘要翻译：即使设置在基板上，也能够振荡的LC振荡器具有晶体管，电容器和电感元件（30）。电感元件（30）具有在半导体衬底（3）的前侧上螺旋地形成并具有几乎相同形状的两个上导体（1）和下导体（2）。引线（6a，6b）分别连接到导体（1）的外端（外周端）和内端（中心端）。导体（1）的外端通过连接线（6c）连接到导体（2）的内端。导体（1）作为电感导体发挥功能，通过引线（6a，6b）与设置在半导体基板（3）上的LC振荡器的其他部件连接。

99. 发明公开

EP1432118A3 Oscillation circuit for television tuner 有权
公开(公告)号：EP1432118A3
公开(公告)日：2004-07-07
申请号：EP03257217.4
申请日：2003-11-15
申请人： ALPS ELECTRIC CO., LTD.
发明人： Yamamoto, Masaki
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1243
摘要： First and second oscillation transistors (2, 3) having their emitters connected with each other, and first and second resonance circuits (11, 12) are provided. The first resonance circuit (11) has one end coupled to the base of the first oscillation transistor (2) and the collector of the second oscillation transistor (3) and its other end grounded, the second resonance circuit (12) has one end coupled to the collector of the first oscillation transistor (2) and the base of the second oscillation transistor (3) and its other end grounded, first switch means (9) is connected between one end of the first resonance circuit (11) and ground, second switch means is connected between one end of the second resonance circuit (12) and ground, and the first and second switch means (9, 10) turn on/off reversely from each other.

100. 发明公开

EP1391989A8 Tuning circuit and IGFET 审中-公开
标题翻译：调整和IGFET
公开(公告)号：EP1391989A8
公开(公告)日：2004-07-07
申请号：EP02255136.0
申请日：2002-07-23
申请人： Nokia Corporation
发明人： Christensen, Kare Tais
IPC分类号： H03J5/24 , H03B5/12
CPC分类号： H03J5/244 , H01L23/4824 , H01L2924/0002 , H03B5/1212 , H03B5/1231 , H03B5/1265 , H03B5/1268 , H03B5/366 , H03B2201/0266 , H03J2200/10 , H01L2924/00
摘要： A tuning circuit comprising a first reactance (12), a second reactance (13) and a insulated gate field effect transistor (11) having a gate arranged to receive a control signal. The first reactance (12) is connected between the source of the field effect transistor (11) and a first node. The second reactance (13) has the same value as the first reactance (12) and is connected between the drain of the field effect transistor (11) and a second node. The first and second nodes are arranged so as to experience a balanced ac signal. Turning the field effect transistor (11) on has the effect of making the first and second reactances (12, 13) effective in the circuit and vice versa. An IGFET has a grounded region (33) surrounding source and drain regions (21, ..., 24, 26, ..., 29). The gate electrode (34) overlies the boundary between the grounded region (33) and the source and drain regions (21, ..., 24, 26, ..., 29).

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