专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明公开

EP3061120A1 ROLL TO ROLL MASK-LESS LITHOGRAPHY WITH ACTIVE ALIGNMENT 审中-公开
标题翻译： WALZE ZUM WALZEN VON MASKENLOSER LITHOGRAFIE MIT AKTIVER AUSRICHTUNG
公开(公告)号：EP3061120A1
公开(公告)日：2016-08-31
申请号：EP14855840.6
申请日：2014-09-24
申请人： Applied Materials, Inc.
发明人： WHITE, John MacNeill
IPC分类号： H01L21/02 , H01L51/56 , H01L27/32
CPC分类号： G03F7/70716 , G03F7/2008 , G03F7/2057 , G03F7/24 , G03F7/70291 , G03F7/70508 , G03F7/70791 , G03F9/7038 , G03F9/7088 , H01L21/67742 , H01L22/20 , H01L31/1876 , H01L51/0014 , H01L51/56 , H01L2251/5338
摘要： Embodiments of the present invention relates to apparatus and methods for a maskless lithography on a flexible substrate with active alignment. In one embodiment, a lithography apparatus includes a cylindrical roller rotatable about a central axis and configured to transfer a flexible substrate on a cylindrical substrate supporting surface. A plurality of printing units, each includes an image sensing device and an imaging printing device, may be positioned facing the substrate supporting surface. The plurality of printing units may capture images of pre-existing patterns and/or markers on the flexible substrate as the flexible substrate is being tramsferred continiously and exposure patterns for each printing unit may be adjusted “on-the-fly” according to the captured image, thus achieving active alignment.
摘要翻译：本发明的实施例涉及在具有主动对准的柔性基板上进行无掩模光刻的装置和方法。在一个实施例中，光刻设备包括可围绕中心轴线旋转并且被配置为将柔性基板传送到圆柱形基板支撑表面上的圆柱形滚柱。每个包括图像感测装置和成像打印装置的打印单元可以被定位成面向基板支撑表面。多个打印单元可以在柔性基板被连续地传送的同时在柔性基板上捕获预先存在的图案和/或标记的图像，并且可以根据捕获的“即时”调整每个印刷单元的曝光图案图像，从而实现主动对准。

92. 发明公开

EP2733533A3 Etching method using block-copolymers 有权转让
标题翻译：使用嵌段共聚物蚀刻
公开(公告)号：EP2733533A3
公开(公告)日：2016-06-01
申请号：EP13189664.9
申请日：2013-10-22
申请人： IMEC , Tokyo Electron Limited
发明人： Chan, Boon Teik , Tahara, Shigeru
IPC分类号： G03F7/00
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0271 , H01L21/3065 , H01L21/3081 , H01L21/3088 , H01L27/04 , H01L51/0014 , H01L51/0017
摘要： A method (10) for lithography, the method comprising:
- Obtaining (12) a self-organizing block-copolymer layer (21) on a neutral layer overlying a substrate (23), the self-organizing block-copolymer layer (21) comprising at least two polymer components (24, 25) having mutually different etching resistances, the self-organizing block-copolymer layer (21) furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components (24, 25),
- Etching (14) selectively a first polymer component (25) of the self-organizing block-copolymer layer (21), thereby remaining a second polymer component (24),
- applying a plasma etching (16) to the neutral layer (22") using the second polymer component (24) as a mask, wherein the plasma etching (16) comprises an inert gas and H 2 .

93. 发明公开

EP2975636A4 PROCESS FOR FORMING ORGANIC SEMICONDUCTOR FILM 有权转让
标题翻译：方法制备有机半导体层
公开(公告)号：EP2975636A4
公开(公告)日：2016-03-30
申请号：EP14764302
申请日：2014-02-19
申请人： FUJIFILM CORP
发明人： USAMI YOSHIHISA
IPC分类号： H01L21/368 , H01L29/786 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0012 , H01L51/00 , H01L51/0002 , H01L51/0007 , H01L51/0014 , H01L51/003 , H01L51/0558 , H01L51/56
摘要： The purpose of the present invention is to provide a process for forming an organic semiconductor film, said process being capable of forming stably an organic semiconductor film which has excellent crystallinity and high mobility. This process for forming an organic semiconductor film includes: applying a covering member having a convex-space-forming restrictive surface, which is to be alienated from a substrate in one direction, to the surface of the substrate in such a manner that the covering member covers an area in which an organic semiconductor film is to be formed; filling a solution into the space formed between the covering member and the substrate so as to satisfy prescribed requirements; and then drying the solution to form an organic semiconductor film. Thus, an organic semiconductor film having excellent crystallinity is formed through use of a solution of an organic semiconductor material.

94. 发明授权

EP1323196B1 SOLID STATE EMBOSSING OF POLYMER DEVICES 有权
标题翻译： SOLID印象聚合物半导体布置的
公开(公告)号：EP1323196B1
公开(公告)日：2016-02-24
申请号：EP01972308.9
申请日：2001-10-04
申请人： Cambridge Enterprise Limited , Eidgenoessische Technische Hochschule Zuerich ETH; Zurich
发明人： SIRRINGHAUS, Henning , FRIEND, Richard, Henry , STUTZMANN, Natalie , SMITH, Paul
IPC分类号： H01L51/40 , H01L51/05 , H01L27/28
CPC分类号： H01L51/0508 , B82Y30/00 , H01L27/283 , H01L51/0005 , H01L51/0014 , H01L51/0022 , H01L51/0037 , H01L51/0039 , H01L51/055 , H01L51/057 , H01L2251/105 , Y10T29/14 , Y10T29/49117 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49798

95. 发明公开

EP2798681A4 METHOD FOR MANUFACTURING ORGANIC SOLAR CELL 审中-公开
标题翻译：方法用于生产有机太阳能电池
公开(公告)号：EP2798681A4
公开(公告)日：2015-12-30
申请号：EP12861743
申请日：2012-05-31
申请人： KOLON INC
发明人： KAL JIN HA , HAN JUNG SEOK , OH CHUL , KIM KWANG SU
IPC分类号： H01L51/48 , B08B1/02
CPC分类号： H01L51/0013 , B08B1/02 , B08B3/041 , B08B5/043 , B08B15/04 , H01L51/0014 , H01L51/0019 , H01L51/42 , H01L51/56 , Y02E10/549 , Y02P70/521

96. 发明公开

EP2870643A1 ORGANIC ELECTRONIC DEVICE MANUFACTURING TECHNIQUES 审中-公开
标题翻译：方法制备有机电子器件
公开(公告)号：EP2870643A1
公开(公告)日：2015-05-13
申请号：EP13741808.3
申请日：2013-06-27
申请人： Cambridge Display Technology Limited
发明人： BURROUGHES, Jeremy
IPC分类号： H01L51/00
CPC分类号： H01L51/0026 , H01L51/0013 , H01L51/0014 , H01L51/0015 , H01L51/0021 , H01L51/0096 , H01L51/0508 , H01L51/0558 , H01L51/105 , H01L51/42 , H01L51/4253 , H01L51/442 , H01L51/5012 , H01L51/504 , H01L51/5206 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： We describe method of manufacturing an organic electronic device, the method comprising: providing an intermediate stage substrate (200), the substrate bearing a plurality of layers of material of said organic electronic device, the layers including at least one conducting layer in thermal contact with at least one organic layer of said organic electronic device; processing said intermediate stage substrate by inductive heating of said conducting material to heat said at least one organic layer to produce a processed substrate; and using said processed substrate to provide said organic electronic device.

97. 发明公开

EP2803095A1 PATTERNED ORGANIC SEMICONDUCTOR LAYERS 审中-公开
标题翻译： GEMUSTERTE有机组织HALBLEITERSCHICHTEN
公开(公告)号：EP2803095A1
公开(公告)日：2014-11-19
申请号：EP12812974.9
申请日：2012-12-20
申请人： IMEC VZW
发明人： CHEYNS, David
IPC分类号： H01L51/00 , H01L51/52 , H01L51/44
CPC分类号： H01L51/0014 , H01L27/32 , H01L27/3204 , H01L51/42 , H01L51/44 , H01L51/52 , H01L51/56 , H01L2251/566 , Y02E10/549
摘要： A method of patterning organic semiconductor layers is disclosed. In one aspect, a method for forming a patterned organic semiconductor layer on a substrate includes providing a plurality of first electrodes on a substrate. The method additionally includes providing a patterned self-assembling monolayer at predetermined locations on each of the plurality of first electrodes. The method further includes providing a layer comprising an organic semiconductor material over the patterned self-assembling monolayer. A corresponding device and a photovoltaic module comprising such a device are also disclosed.
摘要翻译：公开了一种图案化有机半导体层的方法。一方面，在衬底上形成图案化的有机半导体层的方法包括在衬底上设置多个第一电极。该方法还包括在多个第一电极中的每一个上的预定位置处提供图案化的自组装单层。该方法还包括在图案化的自组装单层上提供包含有机半导体材料的层。还公开了包括这种装置的相应装置和光伏模块。

98. 发明公开

EP2789028A1 ORGANIC LIGHT EMITTING DEVICE AND METHOD OF PRODUCING 有权转让
标题翻译：有机光FOR PRODUCING发光装置和方法
公开(公告)号：EP2789028A1
公开(公告)日：2014-10-15
申请号：EP12798285.8
申请日：2012-12-06
申请人： Novaled GmbH
发明人： BIRNSTOCK, Jan , MURANO, Sven , PAVICIC, Domagoj , FURNO, Mauro , ROSENOW, Thomas
IPC分类号： H01L51/52
CPC分类号： H01L51/0014 , H01L51/52 , H01L51/5225 , H01L51/5268 , H01L2251/56
摘要： The invention relates to an organic light emitting device, in a layered structure, comprising a substrate, a bottom electrode, a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, an electrically active region, the electrically active region comprising one or more organic layers and being provided between and in electrical contact with the bottom electrode and the top electrode, a light emitting region provided in the electrically active region, and a roughening layer, the roughening layer being provided as non-closed layer in the electrically active region and providing an electrode roughness to the top electrode by roughening the top electrode on at least one an inner side facing the electrically active region and an outer side of the top electrode facing away from the electrically active region. Furthermore, a further organic light emitting device, and a method of producing an organic light emitting device are provided.

99. 发明公开

EP2774743A1 METHOD FOR PRODUCING CONCAVE-CONVEX SUBSTRATE USING SOL-GEL METHOD, SOL SOLUTION USED IN SAME, METHOD FOR PRODUCING ORGANIC EL ELEMENT USING SAME, AND ORGANIC EL ELEMENT OBTAINED THEREBY 有权
标题翻译：用于生产凹凸SUBSTRATES溶胶 - 凝胶过程中，PROCESS FOR SO和SO制备有机电致发光元件制成的有机EL元件
公开(公告)号：EP2774743A1
公开(公告)日：2014-09-10
申请号：EP12845744.7
申请日：2012-08-16
申请人： JX Nippon Oil & Energy Corporation
发明人： TAKAHASHI, Madoka , KUMAGAI, Yoshihiro , NISHIMURA, Suzushi
IPC分类号： B29C59/00 , B29C59/04 , H01L21/027 , H01L51/50 , H05B33/10
CPC分类号： B29C59/022 , B29C35/02 , B29C59/026 , B29C59/046 , B29C2035/046 , B29C2035/0822 , H01L51/0014 , H01L51/5262 , H01L51/5275 , H01L51/56
摘要： A method for producing a substrate having a concavity and convexity pattern includes: a step S2 for applying a sol containing a silica precursor on a substrate to form a coating film; a step S3 for drying the coating film; a pressing step S4 for pressing a mold having a concavity and convexity pattern against the dried coating film with a pressing roll; a step S6 for peeling off the mold from the coating film; and a step S7 for baking the coating film to which the concavity and convexity pattern has been transferred. The coating film is dried in the drying step so that the ratio of weight of the coating film to dried weight of the coating film is in a range of 1.4 to 8.8, the dried weight being obtained by baking the coating film at a temperature of 100 degrees Celsius. The coating film may be heated in the pressing step.

100. 发明公开

EP2733533A2 Etching method using block-copolymers 有权转让
标题翻译： Ätzverfahrenunter Verwendung von Blockcopolymeren
公开(公告)号：EP2733533A2
公开(公告)日：2014-05-21
申请号：EP13189664.9
申请日：2013-10-22
申请人： IMEC , Tokyo Electron Limited
发明人： Chan, Boon Teik , Tahara, Shigeru
IPC分类号： G03F7/00
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0271 , H01L21/3065 , H01L21/3081 , H01L21/3088 , H01L27/04 , H01L51/0014 , H01L51/0017
摘要： A method (10) for lithography, the method comprising:
- Obtaining (12) a self-organizing block-copolymer layer (21) on a neutral layer overlying a substrate (23), the self-organizing block-copolymer layer (21) comprising at least two polymer components (24, 25) having mutually different etching resistances, the self-organizing block-copolymer layer (21) furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components (24, 25),
- Etching (14) selectively a first polymer component (25) of the self-organizing block-copolymer layer (21), thereby remaining a second polymer component (24),
- applying a plasma etching (16) to the neutral layer (22") using the second polymer component (24) as a mask, wherein the plasma etching (16) comprises an inert gas and H 2 .
摘要翻译：一种用于光刻的方法（10），所述方法包括： - 获得（12）在衬底（23）上的中性层上的自组织嵌段共聚物层（21），所述自组织嵌段共聚物层（21）所述自组织嵌段共聚物层（21）还包含通过所述至少两种聚合物组分（24,24）的微相分离形成的共聚物图案结构，所述聚合物组分（24,25）具有相互不同的抗蚀性， 25）， - 选择性地蚀刻（14）自组织嵌段共聚物层（21）的第一聚合物组分（25），从而保留第二聚合物组分（24）， - 将等离子体蚀刻（16）施加到中性使用第二聚合物组分（24）作为掩模的层（22“），其中等离子体蚀刻（16）包括惰性气体和H 2。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式