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91. 发明公开

EP1670049A4 PRODUCTION OF INSULATING FILM WITH LOW DIELECTRIC CONSTANT 审中-公开
标题翻译：一种制造ISOLATION低介电常数膜
公开(公告)号：EP1670049A4
公开(公告)日：2008-06-04
申请号：EP04773278
申请日：2004-09-17
申请人： TOKYO ELECTRON LTD
发明人： SASAKI MASARU , HOSHINO SATOHIKO , IDE SHINJI , KASHIWAGI YUSAKU
IPC分类号： H01L21/31 , C23C16/40 , H01J37/32 , H01L21/3105 , H01L21/312 , H01L21/316
CPC分类号： H01L21/31695 , C23C16/401 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3003 , H01L21/31058 , H01L21/3121 , H01L21/31633
摘要： Disclosed is a method for decreasing the dielectric constant of an insulating film which is formed by a chemical vapor deposition method and contains Si, O and CH. A process gas containing hydrogen atoms is supplied into a reaction chamber of a plasma processing apparatus. Microwaves are introduced into the reaction chamber for supplying uniform electromagnetic waves therein, thereby generating a plasma containing hydrogen radicals in the reaction chamber. Due to the hydrogen radicals contained in the plasma with which an insulating film is irradiated, the structure of the insulating film is changed and the dielectric constant of the insulating film is decreased. The microwaves are supplied into the reaction chamber via a radial slot antenna.

92. 发明公开

EP1896629A1 PROCEDE DE FORMATION D'UN FILM DIELECTRIQUE ET NOUVEAUX PRECURSEURS POUR LA MISE EN OEUVRE DE CE PROCEDE 有权
标题翻译：一种用于生产介膜和新型PRE用于实施所述方法
公开(公告)号：EP1896629A1
公开(公告)日：2008-03-12
申请号：EP06778689.7
申请日：2006-06-21
申请人： L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： DUSSARRAT, Christian
IPC分类号： C23C16/32 , C23C16/40 , H01L21/316 , H01L21/314
CPC分类号： H01L21/76801 , C23C16/325 , C23C16/401 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02271 , H01L21/3148 , H01L21/31604 , H01L21/31633 , H01L21/76829
摘要： The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one -Si-Cn-Si chain where n≥l.

93. 发明授权

EP1063568B1 Method of forming a fine pattern and method of manufacturing a semiconductor device 有权
标题翻译：一种用于制造精细图案的方法和用于制造半导体元件的方法
公开(公告)号：EP1063568B1
公开(公告)日：2007-08-29
申请号：EP00112783.6
申请日：2000-06-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Okabe, Ichiro, Semiconductor Leading Edge Tech.Inc , Arai, Hiroki, c/o ASM Japan K.K.
IPC分类号： G03F7/16 , H01L21/316 , G03F7/09
CPC分类号： H01L21/02164 , G03F7/0045 , G03F7/091 , G03F7/16 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0234 , H01L21/316 , H01L21/31612

94. 发明公开

EP1799883A2 COATED SUBSTRATES AND METHODS FOR THEIR PREPARATION 审中-公开
标题翻译：涂覆基片
公开(公告)号：EP1799883A2
公开(公告)日：2007-06-27
申请号：EP05858066.3
申请日：2005-08-12
申请人： Dow Corning Corporation
发明人： LOBODA, Mark , SNOW, Steven , WEIDNER, William , ZAMBOV, Ludmil
IPC分类号： C23C28/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/42 , C23C28/44 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3145 , H01L21/31633 , Y10T428/24975 , Y10T428/24992
摘要： Coated substrates (100) containing first barrier layer (102) comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 and at least two alternating buffer (104) and on the first barrier layer (102) wherein each alternating buffer layer (104) comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm 3, and each alternating barrier layer (106) is indepenently selected from hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3, aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride, provided at least one alternating barrier layer (106) is selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.

95. 发明公开

EP1794785A1 METHOD FOR DEPOSITING POROUS FILMS 有权
标题翻译：方法沉积多孔膜
公开(公告)号：EP1794785A1
公开(公告)日：2007-06-13
申请号：EP05786383.9
申请日：2005-08-16
申请人： Mak, Cecilia Y. , Law, Kam S.
发明人： Mak, Cecilia Y. , Law, Kam S.
IPC分类号： H01L21/32 , H01L21/469
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/3124 , H01L21/31625 , H01L21/31629 , H01L21/31695 , H01L2221/1047
摘要： A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. The reagent feed stream comprises a mixture of codeposition reagents and a selective silicon removal reagent. RF power modulation is used to control the codeposition and the selective silicon removal steps with the later proceeds whenever the RF power is turned off or reduced to a low level. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The method is also advantageous for forming other porous films for other applications.

96. 发明公开

EP1156134A3 Method and apparatus of depositing a layer of nitrogen-doped fluorinated silicate glass 审中-公开
标题翻译：用于沉积氟硅玻璃层的方法和装置掺杂氮
公开(公告)号：EP1156134A3
公开(公告)日：2006-07-19
申请号：EP01111449.3
申请日：2001-05-10
申请人： APPLIED MATERIALS, INC.
发明人： Zhang, Lin , Li, Zhuang , Ma, Wen
IPC分类号： C23C16/42 , H01L21/316
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/3143 , H01L21/31629 , Y10S438/958
摘要： Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrogen-containing gases, deposits a layer of nitrofluorinated silicate glass onto the substrate. For gap-fill applications, the substrate is biased with a bias power density between 4.8 and 11.2 W/cm 2 and the ratio of flow rate for the oxygen-containing gas to the combined flow rate for all silicon-containing gases in the process chamber is between 1.0 and 1.8, preferably between 1.2 and 1.4. For damascene applications, the bias power density is less than 3.2 W/cm 2 , preferably 1.6W/cm 2 , and the flow rate ratio is between 1.2 and 3.0. Using optimized parameters, the thin film has a lower dielectric constant and better adhesion properties than fluorosilicate glass.
摘要翻译：间隙填充和镶嵌方法是游离缺失盘上沉积在工艺腔室上的基底绝缘nitrofluorinated硅酸盐玻璃的薄膜。的高密度等离子体，由硅树脂，氟，氧，和含氮气体，存款nitrofluorinated到基材上的硅酸盐玻璃的层的气体混合物生成。为间隙填充应用中，基材的偏置电压为4.8和2.11 W / cm 2并且流速为含氧气体向组合流速为所有含硅气体的比率到处理腔室之间的偏置功率密度为1.0和1.8，优选1.2和1.4之间。对于镶嵌应用中，偏置功率密度小于3.2W / cm 2，优选1.6W / cm 2，并且流率比为1.2和3.0之间。使用优化的参数，该薄膜具有低的介电常数和比氟硅酸盐玻璃更好的粘附性质。

97. 发明公开

EP1670049A1 PRODUCTION OF INSULATING FILM WITH LOW DIELECTRIC CONSTANT 审中-公开
标题翻译： HERSTELLUNG EINES ISOLATIONSFILMS MIT NIEDRIGERDIELEKTRIZITÄTSKONSTANTE
公开(公告)号：EP1670049A1
公开(公告)日：2006-06-14
申请号：EP04773278.9
申请日：2004-09-17
申请人： TOKYO ELECTRON LIMITED
发明人： SASAKI, Masaru, Tokyo Electron AT Limited , HOSHINO, Satohiko, Tokyo Electron AT Limited , IDE, Shinji, Tokyo Electron AT Limited , KASHIWAGI, Yusaku, Tokyo Electron AT Limited
IPC分类号： H01L21/31 , H01L21/312 , H01L21/316
CPC分类号： H01L21/31695 , C23C16/401 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3003 , H01L21/31058 , H01L21/3121 , H01L21/31633
摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.
摘要翻译：本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。将含有氢原子的工艺气体供给到反应容器中。将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。微波通过径向天线插入反应容器中。

98. 发明公开

EP1599898A2 METHOD TO IMPROVE CRACKING THRESHOLDS AND MECHANICAL PROPERTIES OF LOW-K DIELECTRIC MATERIAL 审中-公开
标题翻译：方法提高颠簸和低k电介质材料VALUE力学性能的违反
公开(公告)号：EP1599898A2
公开(公告)日：2005-11-30
申请号：EP04701530.0
申请日：2004-01-12
申请人： APPLIED MATERIALS, INC.
发明人： LI, Lihua , HUANG, Tzu-Fang , ROCHA-ALVAREZ, Juan C. , XIA, Li-Qun
IPC分类号： H01L21/316 , C23C16/40 , C23C16/56
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76826
摘要： One embodiment of the present invention is a method for depositing low-k dielectric films that includes steps of: (a) CVD-depositing a low-k dielectric film; and (b) plasma treating the CVD-deposited, low-k dielectric film.

99. 发明授权

EP0932188B1 Glass formation on a semi-conductor wafer 有权
标题翻译：在半导体晶片上沉积玻璃
公开(公告)号：EP0932188B1
公开(公告)日：2005-10-26
申请号：EP98310017.3
申请日：1998-12-07
申请人： International Business Machines Corporation , SIEMENS AKTIENGESELLSCHAFT , LAM RESEARCH CORPORATION
发明人： Kirchhof, Markus , Chakravarti, Ashima , Ilg, Matthias , McKinley, Kevin A. , Nguyen, Son V. , Shapiro, Michael J.
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/31625 , H01L21/31629

100. 发明公开

EP1576664A1 METHOD OF FORMING A CAP LAYER HAVING ANTI-REFLECTIVE CHARACTERISTICS ON TOP OF A LOW-K DIELECTRIC 审中-公开
标题翻译：防反射层的上的低k介电层的制备
公开(公告)号：EP1576664A1
公开(公告)日：2005-09-21
申请号：EP03781760.8
申请日：2003-11-06
申请人： ADVANCED MICRO DEVICES INC.
发明人： RUELKE, Hartmut , HOHAGE, Joerg , THOMAS, Werner , MAUERSBERGER, Frank
IPC分类号： H01L21/768 , H01L21/314
CPC分类号： H01L21/02164 , H01L21/0214 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3143 , H01L21/3145 , H01L21/31612 , H01L21/76804 , H01L21/76829 , H01L21/76832 , H01L21/7684
摘要： A method of forming a multi-layer stack (230) over a low-k dielectric layer (206) is disclosed, wherein the multi-layer stack (230) provides an improved anti-reflective effect and an enhanced protection of the underlying low-k dielectric material during the chemical mechanical polishing process. The multi-layer stack (230) comprises silicon dioxide based sub-layers (231, 232, 233), which may be formed in a highly efficient, non-expensive plasma enhanced deposition method, wherein the optical characteristics may be adjusted by varying a ratio of silane and nitrogen oxide during the deposition.

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