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91. 发明公开

EP0740710A1 MAGNETRON SPUTTERING APPARATUS FOR COMPOUND THIN FILMS 失效
标题翻译： MIKROWELLENSPUTTERVORRICHTUNG用于生产薄复合薄膜
公开(公告)号：EP0740710A1
公开(公告)日：1996-11-06
申请号：EP95903531.0
申请日：1994-11-30
申请人： Lampkin, Curtis M.
发明人： Lampkin, Curtis M.
IPC分类号： C23C14 , H01J37
CPC分类号： H01J37/3429 , C23C14/3414 , C23C14/35 , C23C14/562 , H01J37/3402 , H01J37/3432
摘要： An apparatus is described for depositing a thin film (9) of compound materials on selected substrates (48) in an evacuable coating chamber. This apparatus includes a rotating primary surrogate magnetron cathode surface (19) which acts to receive, in-situ, material to be sputtered. Vapor crucibles (2) expose the rotating cathode surface (19) to material vapors (8) which condense on the thermally cooled cathode surface (19) to combine with other coatings on the cathode and are thence rotated through the associated plasma sputter zone (26P) to sputter deposit desired film (9). Auxiliary rotating magnetron cathodes (32) can deposit additional material onto rotating primary cathode (19). Molten material crucible assemblies (31) having coating rollers (34) can convey molten material onto rotating auxiliary thermally cooled cathode surfaces (32) which sputter coat primary cathode. When a selected combination of vapor crucibles (2) and auxiliary rotating cathodes (32) cooperate to coat rotating primary cathode surface (19) it is possible to deposit alloys or a large class of compound thin film materials in-situ without having to prefabricate cathodes of compound materials. Sputter deposited film (9) uniformity is improved by use of three methods: cyclically varying power applied to the primary surrogate cathode, narrow sputter zones, and premixing of condensing vapors.

92. 发明公开

EP0335526A2 Magnetron with flux switching cathode and method of operation 失效
标题翻译： Magnetron mit schaltbarem magnetischem Fluss und Betriebsverfahren。
公开(公告)号：EP0335526A2
公开(公告)日：1989-10-04
申请号：EP89302549.4
申请日：1989-03-15
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION
发明人： Aaron, David B. , Wiley, John D.
IPC分类号： H01J37/34 , C23C14/34
CPC分类号： H01J37/3429 , C23C14/35 , C23C14/548 , H01J37/3408 , H01J37/3458
摘要： A magnetron sputtering apparatus is formed with a plurality of cells (A, B, C, D) each for generating an independent magnetic field within a different region in the chamber (13′) of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets (34-37) is positioned on an electrode (60) adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate (19′) mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.
摘要翻译：磁控管溅射装置形成有多个单元（A，B，C，D），用于在装置的室（13分钟）内的不同区域内产生独立的磁场。每个磁场有助于在室的相应区域中维持离子等离子体。多个溅射材料靶（34-37）中的一个位于与每个区域相邻的电极（60）上，使得所述离子撞击目标物喷射一些目标材料。通过选择性地产生每个磁场，离子等离子体可以从区域移动到来自不同靶的溅射材料。溅射的材料沉积在安装在腔室内的另一电极上的基底（19分钟）上。每个电池的占空比可以在沉积期间动态地变化以产生其整个厚度具有渐变组成的层。

93. 发明公开

EP0216919A4 METHOD AND TARGET FOR SPUTTER DEPOSITING THIN FILMS. 失效
标题翻译：法并受薄膜SPLASH的顺序。
公开(公告)号：EP0216919A4
公开(公告)日：1988-05-10
申请号：EP86903089
申请日：1986-05-01
申请人： HEWLETT PACKARD CO
发明人： BLOOMQUIST DARREL R , NATARAJAN BANGALORE R , OPFER JAMES E
IPC分类号： C23C14/34 , C23C14/56 , H01J37/34 , C23C14/00
CPC分类号： H01J37/3429 , C23C14/3407 , C23C14/3414 , C23C14/564 , H01J37/34 , H01J37/3426
摘要： A sputtering target (176) has a sputtering surface with first and second regions (208, 206) of respective first and second materials. The first region (208) comprises a surface of a first member (208) of the first material, such as a circular cobalt plate. The second region (206) comprises a surface of second member (206) of the second material, such as a platinum ring. A cobalt cover ring (210) clamps the platinum ring (206) to the cobalt plate. By varying the relative sizes of the first and second regions (208, 206) as by changing the size of the cover ring (210) to expose more or less of the platinum ring (206), the concentration of the two materials in a layer deposited from the target (176) onto substrates (260) is varied. In addition, by imparting planetary motion to substrates (260) during deposition and sizing and positioning the exposed portion of the platinum ring (206) a radial coercivity gradient is established in the layer deposited on the substrates (260).

94. 发明授权

EP3586353B1 APPARATUS FOR MULTI-CATHODE SUBSTRATE PROCESSING AND A SHIELD FOR SAID APPARATUS 审中-实审
公开(公告)号：EP3586353B1
公开(公告)日：2024-04-24
申请号：EP18756691.4
申请日：2018-02-19
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3441 , H01J37/3429 , H01J37/3447 , C23C14/352

96. 发明授权

EP2949780B1 Ag ALLOY FILM-FORMING SPUTTERING TARGET, Ag ALLOY FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY ELECTROCONDUCTIVE FILM, Ag ALLOY SEMI-PERMEABLE FILM 有权
公开(公告)号：EP2949780B1
公开(公告)日：2018-08-08
申请号：EP14743015.1
申请日：2014-01-21
申请人： Mitsubishi Materials Corporation
发明人： TOSHIMORI Yuto , NONAKA Sohei
IPC分类号： C23C14/34 , C22C5/06 , C22F1/00 , C22F1/14 , H01J37/34
CPC分类号： C22C5/06 , C22F1/14 , C23C14/14 , C23C14/3414 , H01J37/3429
摘要： Provided are a sputtering target for forming a Ag alloy film, a Ag alloy film, a Ag alloy reflective film, a Ag alloy conductive film, and a Ag alloy semi-transparent film. The sputtering target includes, as a composition, 0.2 at% to 2.0 at% of Sb, 0.05 at% to 1.00 at% of Mg, and a balance consisting of Ag and inevitable impurities.

97. 发明授权

EP3141630B1 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME 有权
公开(公告)号：EP3141630B1
公开(公告)日：2018-05-09
申请号：EP16172411.7
申请日：2013-02-15
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Zhang, Shoubin , Umemoto, Keita , Shoji, Masahiro
IPC分类号： C23C14/34 , C23C14/06
CPC分类号： H01J37/3429 , B22F3/10 , B22F2201/20 , B22F2301/00 , B22F2999/00 , C22C1/0425 , C22C32/0089 , C23C14/0623 , C23C14/08 , C23C14/087 , C23C14/3414 , C23C14/35 , B22F3/1007
摘要： Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at% of Ga and 1.0 to 15 at% of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm 2 or higher, and a bulk resistivity of 1 m©·cm or less. The number of 0.05 mm 2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm 2 area of the target surface is 1 or less on average.

98. 发明公开

EP3165632A4 TARGET MATERIAL FOR SPUTTERING AND METHOD FOR MANUFACTURING SAME 有权转让
公开(公告)号：EP3165632A4
公开(公告)日：2018-03-07
申请号：EP15814242
申请日：2015-06-25
申请人： SUMITOMO METAL MINING CO
发明人： OZAWA MAKOTO , ANDO ISAO
IPC分类号： H01J37/34 , C04B35/01 , C04B35/453 , C23C14/34
CPC分类号： C23C14/3407 , C04B35/01 , C04B35/453 , C04B35/457 , C04B37/02 , C04B37/021 , C04B41/80 , C04B2235/3286 , C04B2235/3293 , C23C14/34 , C23C14/3414 , H01J37/3423 , H01J37/3426 , H01J37/3429 , H01J37/3491
摘要： Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 µm or more, a maximum height Rz of 10.0 µm or less, and Rz JIS roughness of 7.0 µm or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).

99. 发明公开

EP3101153A4 Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译： CU-GA-LEGIERUNGS-SPUTTERTARGET UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3101153A4
公开(公告)日：2017-08-30
申请号：EP14881074
申请日：2014-11-18
申请人： MITSUBISHI MATERIALS CORP
发明人： YOSHIDA YUUKI , ISHIYAMA KOUICHI , MORI SATORU
IPC分类号： C23C14/34 , B22F1/00 , B22F3/10 , B22F3/24 , C22C1/04 , C22C1/05 , C22C9/00 , H01J37/34 , H01L31/0749
CPC分类号： H01J37/3429 , B22F1/0003 , B22F1/0011 , B22F3/10 , B22F3/24 , B22F2201/01 , B22F2302/45 , B22F2998/10 , C22C1/0425 , C22C1/0491 , C22C9/00 , C23C14/3414 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： According to the present invention, a Cu-Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom% to 43.0 atom% of Ga and a balance of Cu and inevitable impurities. A Cu-Ga alloy crystal particle in the sintered body has a structure in which ³ phase particles are dispersed in a ³ 1 -phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu-Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1°C/min to 1.0°C/min, at a temperature having a range of 450°C to 650°C.
摘要翻译：根据本发明，作为烧结体的Cu-Ga合金溅射靶具有Ga：29.5原子％〜43.0原子％，余量由Cu和不可避免的杂质构成的组成。烧结体中的Cu-Ga合金晶体颗粒具有其中³相颗粒分散在³1相晶粒中的结构。该溅射靶的制造方法包括：通过在还原气氛中加热由纯Cu粉末和Cu-Ga合金粉末的粉末混合物形成的成型体来进行常压烧结的步骤以及冷却所获得的烧结体的步骤以0.1℃/分钟至1.0℃/分钟的冷却速率在450℃至650℃范围内的温度下进行热处理。

100. 发明公开

EP3196334A1 AG ALLOY SPUTTERING TARGET AND AG ALLOY FILM MANUFACTURING METHOD 审中-公开
标题翻译： AG合金溅射靶和AG合金膜制造方法
公开(公告)号：EP3196334A1
公开(公告)日：2017-07-26
申请号：EP16755337.9
申请日：2016-02-18
申请人： Mitsubishi Materials Corporation
发明人： TOSHIMORI Yuto , KOMIYAMA Shozo , SHIONO Ichiro
IPC分类号： C23C14/34 , C22C5/06 , C22C5/08 , C23C14/14
CPC分类号： C23C14/3414 , C22C5/06 , C22C5/08 , C23C14/14 , C23C14/34 , C23C14/35 , H01J37/3429
摘要： A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
摘要翻译： 1。一种溅射靶，其特征在于，具有选自Cu，Sn，Sb，Mg，In及Ti中的1种或2种以上的合计0.1原子％以上15.0原子％以下的元素的组成， S在0.5原子ppm以上且200原子ppm以下的范围内; 和含有不可避免的杂质的Ag余量。

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