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91. 发明公开

EP3333232A3 CHEMICAL MECHANICAL POLISHING COMPOSITION HAVING CHEMICAL ADDITIVES AND METHODS FOR USING 有权
公开(公告)号：EP3333232A3
公开(公告)日：2018-09-05
申请号：EP18153525.3
申请日：2013-05-10
申请人： Versum Materials US, LLC
发明人： SHI, Xiaobo , SCHLUETER, James Allen , GRAHAM, Maitland Gary , STOEVA, Savaka I. , HENRY, James Matthew
IPC分类号： C09G1/02 , H01L21/3105
摘要： Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; and optionally one or more of an oxidizing agent, a pH buffering agent and salt, a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for "SiC" , SiN" and "SiC x N y " films; and tunable removal selectivity for "SiC" with respect to SiO 2 , "SiN" with respect to SiO 2 , "SiC" with respect to "SiN", or "SiC x N y " with respect to SiO 2 ; wherein x ranges from 0.1wt% to 55wt%, y ranges from 0.1 wt % to 32 wt %.

92. 发明授权

EP3209814B1 COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILMS 有权
公开(公告)号：EP3209814B1
公开(公告)日：2018-09-05
申请号：EP15790761.9
申请日：2015-10-23
申请人： Versum Materials US, LLC
发明人： LEI, Xinjian , KIM, Moo-Sung , MACDONALD, Matthew R. , XIAO, Manchao
IPC分类号： C23C16/40 , C23C16/34 , H01L21/02 , C23C16/455
CPC分类号： C23C16/401 , C23C16/345 , C23C16/36 , C23C16/48 , C23C16/50 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/02348
摘要： Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.

93. 发明公开

EP3351658A1 ETCHING SOLUTION FOR TUNGSTEN AND GST FILMS 有权
公开(公告)号：EP3351658A1
公开(公告)日：2018-07-25
申请号：EP18152899.3
申请日：2018-01-23
申请人： Versum Materials US, LLC
发明人： LIU, Wen Dar , SUN, Laisheng , LEE, Yi-Chia , CHEN, Tianniu , HAN-ADEBEKUN, Gang Chris
IPC分类号： C23F1/38 , C23F1/40 , H01L45/00
CPC分类号： C23F1/38 , C23F1/40 , H01L45/06 , H01L45/144 , H01L45/1675
摘要： Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

94. 发明公开

EP3333232A2 CHEMICAL MECHANICAL POLISHING COMPOSITION HAVING CHEMICAL ADDITIVES AND METHODS FOR USING 有权
公开(公告)号：EP3333232A2
公开(公告)日：2018-06-13
申请号：EP18153525.3
申请日：2013-05-10
申请人： Versum Materials US, LLC
发明人： SHI, Xiaobo , SCHLUETER, James Allen , GRAHAM, Maitland Gary , STOEVA, Savaka I. , HENRY, James Matthew
IPC分类号： C09G1/02 , H01L21/3105
摘要： Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; and optionally one or more of an oxidizing agent, a pH buffering agent and salt, a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for "SiC" , SiN" and "SiC x N y " films; and tunable removal selectivity for "SiC" with respect to SiO 2 , "SiN" with respect to SiO 2 , "SiC" with respect to "SiN", or "SiC x N y " with respect to SiO 2 ; wherein x ranges from 0.1wt% to 55wt%, y ranges from 0.1 wt % to 32 wt %.

95. 发明公开

EP3330404A2 COMPOSITIONS AND PROCESSES FOR DEPOSITING CARBON-DOPED SILICONCONTAINING FILMS 有权
公开(公告)号：EP3330404A2
公开(公告)日：2018-06-06
申请号：EP18151101.5
申请日：2012-06-01
申请人： Versum Materials US, LLC
发明人： XIAO, Manchao , LEI, Xinjian , PEARLSTEIN, Ronald Martin , CHANDRA, Haripin , KARWACKI, JR., Eugene Joseph , HAN, Bing , O'NEILL, Mark Leonard
IPC分类号： C23C16/30 , C07F7/00 , C07F7/08 , C23C16/34 , C23C16/40 , C23C16/455 , C07F7/10 , C07F7/18
CPC分类号： H01L21/02211 , C07F7/0896 , C07F7/10 , C09D5/00 , C09D7/63 , C23C16/30 , C23C16/345 , C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/0228
摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R 5 Si(NR 3 R 4 ) x H 3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R 6 Si(OR 7 ) x H 3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R 8 N(SiR 9 (NR 10 R 11 )H) 2 ; an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR 1 R 2 )H 3 . Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

96. 发明授权

EP2228465B1 Methods for making dielectric films comprising silicon 有权转让
公开(公告)号：EP2228465B1
公开(公告)日：2018-05-23
申请号：EP10156553.9
申请日：2010-03-15
申请人： Versum Materials US, LLC
发明人： Yang, Liu , Xiao, Manchao , Cuthill, Kirk Scott , Han, Bing , O'Neill, Mark Leonard
IPC分类号： C23C16/30 , C23C16/40
CPC分类号： H01L21/02164 , C23C16/30 , C23C16/308 , C23C16/401 , H01L21/0228
摘要： Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. The methods employ a silicon-containing precursor having the formula R 1 3 Si-R 2 -SiR 3 3 , for example 1,4-disilabutane, and an oxygen source which is provided in a molecular amount less than a 1:1 ratio to the silicon precursor.

97. 发明授权

EP3153558B1 CHEMICAL MECHANICAL POLISHING COMPOSITION 有权转让
标题翻译：化学机械抛光组合物
公开(公告)号：EP3153558B1
公开(公告)日：2018-03-21
申请号：EP16190495.8
申请日：2016-09-23
申请人： Versum Materials US, LLC
发明人： STENDER, Matthias , GRAHAM, Maitland Gary
IPC分类号： C09G1/02 , H01L21/321 , C09K3/14 , C09G1/04 , H01L21/3105 , H01L21/768
CPC分类号： C09G1/04 , C08K3/22 , C08K3/36 , C08K2003/2237 , C08K2003/2241 , C08K2003/2244 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819 , H01L21/7684
摘要： Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH >7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

98. 发明公开

EP3268997A1 PROCESS FOR DEPOSITING POROUS ORGANOSILICATE GLASS FILMS FOR USE AS RESISTIVE RANDOM ACCESS MEMORY 审中-公开
标题翻译：用于沉积多孔无机硅酸盐玻璃膜以用作抗性随机存取存储器的过程
公开(公告)号：EP3268997A1
公开(公告)日：2018-01-17
申请号：EP16718741.8
申请日：2016-03-08
申请人： Versum Materials US, LLC
发明人： RIDGEWAY, Robert, Gordon , SAVO, Michael, T. , VRTIS, Raymond, Nicholas , ENTLEY, William, Robert , LEI, Xinjian , LANGAN, John, Giles
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641
摘要： A process for forming a resistive random-access memory device, the process comprising the steps of: depositing a first electrode on a substrate; forming a porous resistive memory material layer on the first electrode, wherein the porous resistive memory layer is formed by (i) depositing a gaseous composition comprising a silicon precursor and a porogen precursor and, once deposited, (ii) removing the porogen precursor by exposing the composition to UV radiation; and depositing a second electrode on top of the porous resistive memory material layer.

99. 发明公开

EP3221671A1 ULTRASONIC LIQUID LEVEL SENSING SYSTEMS 有权
标题翻译：超声波液位传感系统
公开(公告)号：EP3221671A1
公开(公告)日：2017-09-27
申请号：EP15860126.0
申请日：2015-11-18
申请人： Versum Materials US, LLC
发明人： BIRTCHER, Charles Michael , STEIDL, Thomas Andrew
IPC分类号： G01F23/296 , H01L21/66
CPC分类号： G01F23/2961
摘要： An ultrasonic sensor probe (100) and controller (109). The controller (109) is operationally configured to determine and display wet and dry status of each of a plurality of ultrasonic sensors (156) positioned in the barrel (123) of the probe (100). The controller (109) may change the status of a sensor (156) from wet to dry or dry to wet if certain conditions are met, such as the sensor (156) consistently indicates the new status over multiple readings or over a predetermined period of time. The controller (109) preferably includes a two-wire output capable of producing a stepped analog or digital signal that indicates the fluid level in a container in which the probe (100) is positioned.
摘要翻译：超声波传感器探头（100）和控制器（109）。控制器（109）在操作上被配置为确定并显示定位在探针（100）的筒（123）中的多个超声波传感器（156）中的每一个的湿态和干态。如果某些条件得到满足，例如传感器（156）始终如一地在多个读数上指示新的状态或者在预定的时间段内超过预定时间，则控制器（109）可以将传感器（156）的状态从湿润状态改变为干燥状态或从干燥状态改变为湿润状态时间。控制器（109）优选地包括能够产生阶梯式模拟或数字信号的双线输出，其指示探头（100）所处的容器中的液位。

100. 发明公开

EP2063167A3 Vessels with personnel access provisions 有权转让
标题翻译：具有人员进入规定的船舶
公开(公告)号：EP2063167A3
公开(公告)日：2017-09-20
申请号：EP08020444.9
申请日：2008-11-25
申请人： Versum Materials US, LLC
发明人： Gershtein, Vladimir Yliy , Butler, Christopher R.
IPC分类号： F17C13/06 , B65D90/10
CPC分类号： F17C13/04 , B65D90/10 , B65D90/105 , F17C13/06 , F17C2201/0104 , F17C2201/0109 , F17C2201/0166 , F17C2201/035 , F17C2201/052 , F17C2201/054 , F17C2203/0612 , F17C2203/0617 , F17C2205/0311 , F17C2205/0323 , F17C2205/0379 , F17C2209/221 , F17C2221/05 , F17C2223/0123 , F17C2223/0153 , F17C2223/033 , F17C2260/015 , F17C2260/036 , F17C2270/05 , F17C2270/0518 , Y10T137/0441
摘要： Embodiments of vessels include personnel access provisions having welded or otherwise permanent connections that substantially reduce the potential for leakage into or out of the vessels by way of the personnel access provisions.
摘要翻译：容器的实施例包括具有焊接或其他永久连接的人员进入装置，其通过人员进入规定基本上降低了进入或离开容器的可能性。

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