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    • 9. 发明公开
    • Method for determining the doping profile of a partially activated doped semiconductor region
    • 一种用于确定部分活化型半导体区域的掺杂分布方法
    • EP2139033A3
    • 2012-04-04
    • EP09163837.9
    • 2009-06-26
    • IMECKatholieke Universiteit Leuven
    • Bogdanowicz, Janusz
    • H01L21/66G01N21/17
    • G01N21/55G01N21/1717G01N2021/1719G01N2021/1725G01N2021/1731H01L22/12
    • A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method, the method comprising: providing a set of at least two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depth, determining on at least of these semiconductor regions the as-implanted concentration, partially activate at least two semiconductor regions from the semiconductor set, measure by PMOR on the partially activated semiconductor regions the signed amplitude of the reflected probe signal as function of junction depth and for at least two laser separation values, measure by PMOR on the partially activated semiconductor regions the DC probe reflectivity as function of junction depth, extracting from these measurements the active doping concentration thereby assuming crystal mobility and, calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration. The method may further comprise the step of extracting thermal diffusivity, refraction index, absorption coefficient, and/or SRHF lifetime from these measurements.
    • 一种方法,光盘游离缺失确定性采矿使用PMOR方法,该方法包括一个半导体区域的非活性掺杂浓度:提供具有基本相同的被称为注入浓度的一组至少两个半导体区域的,但已知的变化的结深度,确定性采矿上在 至少论文半导体区域中的植入的浓度的,部分激活从所述半导体组至少两个半导体区域,在部分激活的半导体区域测量由PMOR所述反射的测试信号的带符号的振幅为结深度的函数和用于至少两个 激光分离值,在部分激活的半导体区域测量由PMOR直流探针反射率结深度的函数,从合成的测量中提取的有效掺杂浓度,由此假设晶体的流动性和,计算使用所述确定性开采总的惰性掺杂浓度作为注入浓度 和活性掺杂 浓度。 该方法可以包括另外的从合成的测量中提取的热扩散率,折射率,吸收系数的步骤,和/或SRHF寿命。