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    • 5. 发明公开
    • SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 半导体发光器件
    • EP2851969A1
    • 2015-03-25
    • EP14766651.5
    • 2014-04-30
    • Semicon Light Co., Ltd.
    • PARK, Eun HyunJEON, Soo Kun
    • H01L33/36
    • H01L33/46H01L33/387H01L33/405
    • The present disclosure relates to a semiconductor light emitting device, which comprises: a plurality of semiconductor layers; a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer; a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate; a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers; an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers.
    • 本公开涉及一种半导体发光器件,其包括:多个半导体层; 由于部分去除第二半导体层和有源层而暴露出第一半导体层的接触区域; 非导电反射膜,其适于覆盖所述第二半导体层和所述接触区域,使得来自所述有源层的光朝向所述生长衬底侧的所述第一半导体层反射; 指状电极,其在所述非导电性反射膜与所述多个半导体层之间延伸; 适于穿过所述不导电反射膜并与所述指状电极电连接的电连接; 以及适于穿过不导电反射膜并与多个半导体层电连接的直接连接型电连接。
    • 6. 发明公开
    • SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    • LICHTEMITTITRENDEND HALBLEITERELEMENT
    • EP2782149A2
    • 2014-09-24
    • EP13819478.2
    • 2013-07-18
    • Semicon Light Co. Ltd.
    • JEON, Soo KunPARK, Eun HyunKIM, Yong Deok
    • H01L33/46H01L33/36
    • H01L33/10H01L33/32H01L33/38H01L33/382H01L33/387H01L33/42H01L33/44H01L33/46H01L33/50H01L33/504H01L2224/14H01L2933/0025
    • The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.
    • 本公开涉及一种半导体发光器件,包括:多个半导体层,其在生长衬底上顺序生长,多个半导体层包括具有第一导电性的第一半导体层,具有第二导电性的第二半导体层 与第一导电率不同的有源层和介于第一半导体层和第二半导体层之间的有源层,经由电子 - 空穴复合产生具有第一波长的光; 第一电极,向多个半导体层提供电子或空穴; 第二电极,如果由第一电极提供空穴,则向多个半导体层提供电子,或者如果电子由第一电极供应,则提供空穴; 设置在生长衬底侧的第一半导体层上的荧光体部分,将在有源层中产生的第一波长的光转换为第二波长的光; 以及形成在第二半导体层上的用于将来自有源层的光朝向生长衬底侧的第一半导体层反射的非导电反射膜,其中非导电反射膜具有基于 由荧光体部分转换的光。