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    • 1. 发明公开
    • LOW CAPACITANCE SCR WITH TRIGGER ELEMENT
    • 较差的可控硅触发要素能力
    • EP1946381A2
    • 2008-07-23
    • EP06816769.1
    • 2006-10-11
    • Texas Instruments Incorporated
    • BOSELLI, Gianluca
    • H01L29/74
    • H01L29/87H01L27/0262H01L27/0817H01L29/66121H03K17/0403H03K17/08108
    • A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element (522). A first well region (504) of a first conductivity type formed within a semiconductor body (502). A first region (510) of the first conductivity type is formed within the first well region. A second region (512) of a second conductivity type is formed with the first well region. A second well region (506) having the second conductivity type is formed within the semiconductor body adjacent the first well region. A third region (514) of the first conductivity type is formed within the second well region. A fourth region (516) of the second conductivity type is formed within the second well region. The trigger element is connected to the first region and alters a base trigger voltage and a base holding voltage into an altered trigger voltage and an altered holding voltage. A first terminal or pad (518) is connected to the second region. A second terminal (520) is connected to the third region, the fourth region, and the trigger element. In operation, the first terminal conducts current to the second terminal during a low impedance state in response to the altered trigger voltage being applied to the first terminal.