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1. 发明授权

EP2532767B1 Process for making a ternary metal chalcogenide film, 有权
标题翻译：一种用于生产三元金属硫属化合物构成的层的过程
公开(公告)号：EP2532767B1
公开(公告)日：2017-03-15
申请号：EP12171360.6
申请日：2012-06-08
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Xiao, Manchao , Lei, Xinjian , Yang, Liu
IPC分类号： C23C16/30 , C23C16/455
CPC分类号： C23C16/305 , C23C16/45531 , C23C16/45553

2. 发明授权

EP2789712B1 Method of making a multicomponent film 有权
标题翻译：制造多组分薄膜的方法
公开(公告)号：EP2789712B1
公开(公告)日：2017-01-25
申请号：EP14164386.6
申请日：2014-04-11
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Xiao, Manchao , Buchanana, Iain , Kim, Moo-Sung , Ivanov, Sergei Vladimirovich , Lei, Xinjian , Hwang, Cheol Seong , Gwon, Tae Hong
IPC分类号： H01L45/00 , C23C16/30 , C23C16/455
CPC分类号： H01L45/1616 , C23C16/22 , C23C16/28 , C23C16/305 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L45/06 , H01L45/144

3. 发明公开

EP2860182A3 Organoaminosilane precursors and methods for depositing films comprising same 有权转让
标题翻译： Organoaminosilanvorläuferund Verfahren zum Ablagern von Filmen damit
公开(公告)号：EP2860182A3
公开(公告)日：2015-08-05
申请号：EP14185776.3
申请日：2014-09-22
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： O'Neill, Mark Leonard , Xiao, Manchao , Lei, Xinjian , Ho, Richard , Chandra, Haripin , Macdonald, Matthew R. , Wang, Meiliang
IPC分类号： C07F7/10 , C23C16/24 , H01L21/02
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:

In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350°C or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
摘要翻译：本文描述了用于形成含硅膜的前体和方法。在一个方面，前体包含由以下下式A至E之一表示的化合物：在一个具体实施方案中，有机氨基硅烷前体对于低温（例如350℃或更低），原子层沉积（ALD）或等离子体增强的原子层沉积（PEALD）。此外，本文描述的是包含本文所述的有机氨基硅烷的组合物，其中有机氨基硅烷基本上不含选自胺，卤化物（例如Cl，F，I，Br），较高分子量物质和痕量金属中的至少一种。

4. 发明公开

EP2818474A1 Aza-polysilane precursors and methods for depositing films comprising same 有权转让
标题翻译： Aza-Polysilan-Vorläuferund Verfahren zur Ablagerung von Filmen damit
公开(公告)号：EP2818474A1
公开(公告)日：2014-12-31
申请号：EP14174252.8
申请日：2014-06-26
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Xiao, Manchao , Lei, Xinjian , Spence, Daniel P.
IPC分类号： C07F7/10 , C01B33/04 , C23C16/00
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si-N bonds, at least one Si-Si bond, and at least two SiH 2 groups represented by the following Formula IA, IB and IC:

wherein R 1 and R 2 are independently selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, C 3 to C 10 cyclic alkyl group, C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, and a C 3 to C 10 hetero-aryl group, a C 2 to C 10 dialkylamino group, a C 3 to C 10 cyclic alkylamino group; R 3 and R 4 are independently selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, C 3 to C 10 cyclic alkyl group, C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, and a C 3 to C 10 hetero-aryl group, a C 2 to C 10 dialkylamino group, a C 3 to C 10 cyclic alkylamino group; wherein R 1 in Formula IA cannot be methyl, R 1 and R 2 in Formula IB cannot both be iso-propyl, both be tert-butyl or both be benzyl and R 3 and R 4 cannot both be methyl or both be phenyl.
摘要翻译：本文描述了用于形成含硅膜的前体和方法。一方面，提供了包含至少两个Si-N键，至少一个Si-Si键和由下式IA，IB和IC表示的至少两个SiH 2基团的氮杂聚硅烷前体：其中R 1 R 2独立地选自直链或支链C 1至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 3至C 10环烷基 C 3〜C 10杂环烷基，C 5〜C 10芳基，C 3〜C 10杂芳基，C 2〜C 10二烷基氨基，C 3〜C 10环状烷基氨基; R 3和R 4独立地选自氢，直链或支链C 1至C 10烷基，直链或支链C 2至C 10烯基，直链或支链C 2至C 10炔基，C 3至 C 10环烷基，C 3〜C 10杂环烷基，C 5〜C 10芳基，C 3〜C 10杂芳基，C 2〜C 10二烷基氨基，C 3 至C 10环烷基氨基; 其中式IA中的R 1不能是甲基，式IB中的R 1和R 2不能同时为异丙基，均为叔丁基或二者均为苄基，R 3和R 4不能同时为甲基或二者都为苯基。

5. 发明公开

EP2639331A2 Catalyst synthesis for organosilane sol-gel reactions 审中-公开
标题翻译：有机硅烷溶胶凝胶
公开(公告)号：EP2639331A2
公开(公告)日：2013-09-18
申请号：EP13159800.5
申请日：2013-03-18
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Xiao, Manchao , Pearlstein, Ronald Martin , Derecskei-Kovacs, Agnes , Lei, Xinjian , Ho, Richard , O'Neill, Mark Leonard , Spence, Daniel P. , Mayorga, Steven Gerard
IPC分类号： C23C18/12 , C07F7/08 , C07F7/12 , C07F7/18
CPC分类号： C09D5/00 , C23C18/122 , C23C18/1254 , C23C18/1295
摘要： A formulation comprising a first organosilane precursor, optionally a halogenation reagent, and a second organosilane precursor are described. At least a portion or all of the halogenation reagent may react with the first organosilane precursor to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process.
摘要翻译：描述了包含第一有机硅烷前体，任选的卤化试剂和第二有机硅烷前体的配方。至少一部分或全部卤化试剂可与第一有机硅烷前体反应以提供第二有机硅烷前体。还提供了从容易获得的纯物质原位产生这种制剂的方法。还提供了使用制剂作为可流动气相沉积方法的前体的方法。

6. 发明公开

EP2535343A3 Organoaminosilane precursors and methods for making and using same 有权
标题翻译：有机氨基硅烷前体和制造和使用它们的方法
公开(公告)号：EP2535343A3
公开(公告)日：2013-03-27
申请号：EP12169229.7
申请日：2012-05-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Xiao, Manchao , Lei, Xinjian , Han, Bing , O'Neill, Mark Leonard , Pearlstein, Ronald Martin , Ho, Richard , Chandra, Haripin , Derecskei-Kovacs, Agnes
IPC分类号： C07F7/02 , C23C16/36 , H01L21/02
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

7. 发明授权

EP2264218B1 CVD precursors for silicon containing films 有权转让
标题翻译：前体CVD含硅层
公开(公告)号：EP2264218B1
公开(公告)日：2012-11-14
申请号：EP10181347.5
申请日：2006-05-11
申请人： Air Products and Chemicals, Inc.
发明人： Xiao, Manchao , Hochberg, Arthur Kenneth
IPC分类号： C23C16/36 , C07F7/02 , H01L21/02
CPC分类号： H01L21/02211 , C07F7/025 , C09D5/00 , C23C16/36 , H01L21/02167 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228

8. 发明授权

EP2067876B1 ALD or CVD process for producing germanium-antimony-tellurium films 失效
标题翻译： ALD或CVD工艺用于生产锗 - 锑 - 碲层的
公开(公告)号：EP2067876B1
公开(公告)日：2011-09-21
申请号：EP08170145.0
申请日：2008-11-27
申请人： Air Products and Chemicals, Inc.
发明人： Xiao, Manchao , Yang, Liu , Gaffney, Thomas Richard
IPC分类号： C23C16/30 , C23C16/455
CPC分类号： C23C16/45531 , C23C16/305 , C23C16/45527 , C23C16/45553

9. 发明公开

EP2154141A3 Precursors for depositing silicon-containing films and methods for making and using same 有权
标题翻译：前体用于沉积含硅薄膜，以及它们的制备方法和用途
公开(公告)号：EP2154141A3
公开(公告)日：2011-05-25
申请号：EP09167403.6
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C07F7/08 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025
摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R 1 R 2 N) n SiR 3 4-n (I)

wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

10. 发明授权

EP1491655B1 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane 有权转让
标题翻译：稳定剂，以防止取代的环四硅氧烷的聚合
公开(公告)号：EP1491655B1
公开(公告)日：2011-01-05
申请号：EP04014368.7
申请日：2004-06-18
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Mayorga, Steven Gerard , Xiao, Manchao , Gaffney, Thomas Richard , Syvret, Robert George
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： C23C16/401 , C07F7/20 , C07F7/21 , C08K5/13 , C09D4/00 , H01L21/02164 , H01L21/02271 , H01L21/31608 , C08G77/04
摘要： Stabilizing a cyclotetrasiloxane against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprises providing a free radical polymerization inhibitor to the cyclotetrasiloxane. Stabilizing a cyclotetrasiloxane against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprises providing a free radical polymerization inhibitor to the cyclotetrasiloxane of formula (I). [Image] R 1>-R 7>H, 1-10C alkyl or 1-4C alkoxy. An independent claim is also included for a composition of a cyclotetrasiloxane stabilizing against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication, comprising the cyclotetrasiloxane of formula (I) and a free radical scavenger polymerization inhibitor.

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