专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07297994B2 Semiconductor device having a retrograde dopant profile in a channel region 有权
标题翻译：半导体器件在沟道区域具有逆向掺杂物分布
公开(公告)号：US07297994B2
公开(公告)日：2007-11-20
申请号：US11072142
申请日：2005-03-04
申请人： Karsten Wieczorek , Manfred Horstmann , Rolf Stephan
发明人： Karsten Wieczorek , Manfred Horstmann , Rolf Stephan
IPC分类号： H10L29/00 , H01L29/80
CPC分类号： H01L21/823807 , H01L29/1033 , H01L29/105 , H01L29/1054 , H01L29/6659
摘要： An epitaxially grown channel layer is provided on a well structure after ion implantation steps and heat treatment steps are performed to establish a required dopant profile in the well structure. The channel layer may be undoped or slightly doped, as required, so that the finally obtained dopant concentration in the channel layer is significantly reduced compared to a conventional device to thereby provide a retrograde dopant profile in a channel region of a field effect transistor. Additionally, a barrier diffusion layer may be provided between the well structure and the channel layer to reduce up-diffusion during any heat treatments carried out after the formation of the channel layer. The final dopant profile in the channel region may be adjusted by the thickness of the channel layer, the thickness and the composition of the diffusion barrier layer and any additional implantation steps to introduce dopant atoms in the channel layer.
摘要翻译：在离子注入步骤之后在阱结构上提供外延生长的沟道层，并且进行热处理步骤以在阱结构中建立所需的掺杂剂分布。根据需要，沟道层可以是未掺杂的或稍微掺杂的，使得与常规器件相比，沟道层中最终获得的掺杂剂浓度显着降低，从而在场效应晶体管的沟道区域中提供逆向掺杂物分布。此外，可以在阱结构和沟道层之间提供阻挡扩散层，以在形成沟道层之后进行的任何热处理期间减小向上扩散。可以通过沟道层的厚度，扩散阻挡层的厚度和组成以及在沟道层中引入掺杂剂原子的任何额外的注入步骤来调整沟道区中的最终掺杂物分布。

IPRDB

热门服务

关于我们

友情链接

联系方式