会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Semiconductor device having a retrograde dopant profile in a channel region
    • 半导体器件在沟道区域具有逆向掺杂物分布
    • US07297994B2
    • 2007-11-20
    • US11072142
    • 2005-03-04
    • Karsten WieczorekManfred HorstmannRolf Stephan
    • Karsten WieczorekManfred HorstmannRolf Stephan
    • H10L29/00H01L29/80
    • H01L21/823807H01L29/1033H01L29/105H01L29/1054H01L29/6659
    • An epitaxially grown channel layer is provided on a well structure after ion implantation steps and heat treatment steps are performed to establish a required dopant profile in the well structure. The channel layer may be undoped or slightly doped, as required, so that the finally obtained dopant concentration in the channel layer is significantly reduced compared to a conventional device to thereby provide a retrograde dopant profile in a channel region of a field effect transistor. Additionally, a barrier diffusion layer may be provided between the well structure and the channel layer to reduce up-diffusion during any heat treatments carried out after the formation of the channel layer. The final dopant profile in the channel region may be adjusted by the thickness of the channel layer, the thickness and the composition of the diffusion barrier layer and any additional implantation steps to introduce dopant atoms in the channel layer.
    • 在离子注入步骤之后在阱结构上提供外延生长的沟道层,并且进行热处理步骤以在阱结构中建立所需的掺杂剂分布。 根据需要,沟道层可以是未掺杂的或稍微掺杂的,使得与常规器件相比,沟道层中最终获得的掺杂剂浓度显着降低,从而在场效应晶体管的沟道区域中提供逆向掺杂物分布。 此外,可以在阱结构和沟道层之间提供阻挡扩散层,以在形成沟道层之后进行的任何热处理期间减小向上扩散。 可以通过沟道层的厚度,扩散阻挡层的厚度和组成以及在沟道层中引入掺杂剂原子的任何额外的注入步骤来调整沟道区中的最终掺杂物分布。