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1. 发明公开

EP0189123A3 Acoustic-wave filter 失效
标题翻译：声波滤波器
公开(公告)号：EP0189123A3
公开(公告)日：1988-09-07
申请号：EP86100516
申请日：1986-01-16
申请人： Siemens Aktiengesellschaft
发明人： Bulst, Wolf-Eckhart, Dipl.-Phys. , Lindemann, Gertrud , Zibis, Peter, Dipl.-Ing.
IPC分类号： H03H09/64 , H03H03/08 , H03H09/02
CPC分类号： H03H9/02637 , H03H9/02992 , Y10T29/42

2. 发明申请

WO1987003756A1 METHOD FOR FABRICATING A SURFACE WAVE DISPERSIVE FILTER AND FILTER FABRICATED ACCORDING TO SAID METHOD 审中-公开
标题翻译：用于制作表面波分散过滤器的方法和根据该方法制成的过滤器
公开(公告)号：WO1987003756A1
公开(公告)日：1987-06-18
申请号：PCT/FR1986000402
申请日：1986-11-25
申请人： THOMSON-CSF , GAUTIER, Hervé , LARDAT, Claude
发明人： THOMSON-CSF
IPC分类号： H03H03/08
CPC分类号： H03H3/08
摘要： The invention relates to surface wave dispersive filters of the RAC type. It consists in the replacement, in an RAC of a known type of one of the input or output transducers (10, 11) by a surface wave filter-forming transducer (20) of which the transfer function provides for the correction of errors of the initial transfer function of the RAC. It makes it possible to easily correct RAC dispersive filters.
摘要翻译：本发明涉及RAC型表面波分散滤波器。它包括在表面波形滤波器形成传感器（20）中的已知类型的输入或输出换能器（10,11）中的RAC中的替换，其中传递函数提供用于校正 RAC的初始传递函数。它可以轻松地修正RAC分散滤波器。

3. 发明申请

WO1995024075A1 SURFACE ACOUSTIC WAVE RESONATOR ELEMENT, SURFACE ACOUSTIC WAVE RESONATOR, SURFACE-MOUNT SURFACE ACOUSTIC WAVE RESONATOR, AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：表面声波谐振器元件，表面声波谐振器，表面安装表面声波谐振器及其制造方法
公开(公告)号：WO1995024075A1
公开(公告)日：1995-09-08
申请号：PCT/JP1995000311
申请日：1995-02-28
申请人： SEIKO EPSON CORPORATION , OGISO, Hiroyuki , IGUCHI, Shuuichi , KITAMURA, Fumitaka
发明人： SEIKO EPSON CORPORATION
IPC分类号： H03H03/08
CPC分类号： H03H9/1071 , H03H9/059
摘要： A surface acoustic wave resonator having an extremely stable resonance frequency, a low equivalent series resistance and a high Q value can be accomplished by using a cantilevered resonator element that comprises an IDT and a reflector arranged on a piezoelectric body. Further, the Q value can be improved by enclosing this SAW resonator in a vacuum housing. The electrodes constituting the IDT are anodized to form thick oxide, which prevents them from short-circuiting due to foreign particles without deteriorating the characteristics. Such a SAW device, attached to a lead frame, may be molded with resin to provide a low-cost, surface-mount SAW device of high reliability and quality.
摘要翻译：具有非常稳定的谐振频率，低等效串联电阻和高Q值的表面声波谐振器可以通过使用包括IDT的反射器和布置在压电体上的反射器的悬臂谐振元件来实现。此外，通过将该SAW谐振器封装在真空壳体中可以改善Q值。构成IDT的电极被阳极氧化以形成厚的氧化物，这防止它们由于异物而短路而不劣化特性。附接到引线框架的这种SAW器件可以用树脂模制以提供高可靠性和高质量的低成本的表面安装的SAW器件。

4. 发明公开

EP0135466A3 Low reflectivity electrodes in semiconductive saw devices 失效
标题翻译：半导体器件中的低反射电极
公开(公告)号：EP0135466A3
公开(公告)日：1987-04-08
申请号：EP84630120
申请日：1984-08-21
申请人： UNITED TECHNOLOGIES CORPORATION
发明人： Grudkowski, Thomas Walter
IPC分类号： H03H09/145 , H03H03/08 , H03H09/02
CPC分类号： H03H9/14538 , H03H9/02566 , H03H9/02842 , H03H9/02858 , H03H9/02881
摘要： Low reflectivity electrodes (2-4) are formed within recesses extending from a major surface of a semiconductive and piezoelectric substrate (1) (such as gallium arsenide) so as to reduce SAW reflectivity from the electrodes.

5. 发明公开

EP0104740A3 Broad band surface acoustic wave edge deposited transducer 失效
标题翻译：宽带表面波形边缘沉积传感器
公开(公告)号：EP0104740A3
公开(公告)日：1986-02-19
申请号：EP83304744
申请日：1983-08-16
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Wagers, Robert S.
IPC分类号： H03H09/145 , H03H03/08
CPC分类号： H03H9/14502
摘要： Disclosed is a method for fabricating and structure for a broad band surface acoustic wave (SAW) edge deposited transducer (EDT) (10) capable of frequencies in excess of 1 GHz and bandwidths in the hundreds of MHz. The method and apparatus allows fabrication of such a transducer on a semiconductor substrate (12) which is either non-piezoelectric or weakly piezoelectric. The substrate is formed such as to have a sharp, smooth edge (20) formed by the intersection of its top (18) and a side surface (16). A passivation layer (24) is deposited on the side surface of the substrate followed by a starter layer (34) to provide adhesion and nucleation sites. An inner metallic (gold, for example) electrode (26) is then deposited on the starter layer followed by a transducer layer (40) being deposited on the inner metallic electrode. An outer metallic electrode (36) is then deposited on the transducer layer a predetermined distance below the top surface of the substrate. When the transducer is excited, bulk longitudinal waves are generated in the transducer layer which couple to the longitudinal component of the surface wave in the substrate causing the SAW mode to propagate away from the transducer (10).

6. 发明申请

WO1997018628A1 A METHOD OF HERMETICALLY BONDING OXIDE MATERIALS AT RELATIVE LOW TEMPERATURES 审中-公开
标题翻译：一种在相对低温下渗透氧化物质的方法
公开(公告)号：WO1997018628A1
公开(公告)日：1997-05-22
申请号：PCT/DK1996000470
申请日：1996-11-15
申请人： AMP DANMARK, filial af AMP-HOLLAND B.V., HOLLAND , CHRISTENSEN, Frank, K.
发明人： AMP DANMARK, filial af AMP-HOLLAND B.V., HOLLAND
IPC分类号： H03H03/08
CPC分类号： H03H3/08
摘要： A method of hermetically bonding oxide materials. The bonding is performed by means of an intermediate layer of a commercially available lead borate glass at a temperature below the melting point of aluminium. The method requires no previous surface treatment of structuring of the oxide materials, and electrical feedthroughs can be provided in the same process step as the bonding.
摘要翻译：一种密封氧化物材料的方法。在低于铝的熔点的温度下，通过市售的硼酸铅玻璃的中间层进行接合。该方法不需要对氧化物材料的结构进行先前的表面处理，并且可以在与粘合相同的工艺步骤中提供电馈通。

7. 发明申请

WO1992019042A1 PROCESS FOR PRODUCING REFLECTORS FOR DIFFERENTLY CODABLE REFLECTIVE DELAY LINES IN SURFACE WAVE TECHNOLOGY 审中-公开
标题翻译：表面波技术中不同可编码反射延迟线生产反射器的方法
公开(公告)号：WO1992019042A1
公开(公告)日：1992-10-29
申请号：PCT/DE1992000304
申请日：1992-04-13
申请人： SIEMENS MATSUSHITA COMPONENTS GMBH & CO. KG , FLEISCHMANN, Bernd
发明人： SIEMENS MATSUSHITA COMPONENTS GMBH & CO. KG
IPC分类号： H03H03/08
CPC分类号： H03H9/02645
摘要： Process for producing reflectors for differently codable delay lines in surface wave technology in which, in an initial masking stage, finger electrodes which are unconnected or interconnected in pairs are produced for reflectors taking the form of multi-strip couplers and, in a second masking stage, to provide coding structures, the finger electrodes are connected in pairs in predetermined structures or totally short-circuited.

8. 发明申请

WO1998049772A1 METHOD OF MAKING SURFACE WAVE DEVICES 审中-公开
标题翻译：制作表面波装置的方法
公开(公告)号：WO1998049772A1
公开(公告)日：1998-11-05
申请号：PCT/CA1997000510
申请日：1997-07-16
申请人： NORTHERN TELECOM LIMITED
发明人： NORTHERN TELECOM LIMITED , SENIUK, David, R. , DAI, Ji-Dong
IPC分类号： H03H03/08
CPC分类号： H03H3/08
摘要： A surface wave device is made by forming conductors on a surface of a piezoelectric material in a conductor pattern defined by exposing photoresist via a reticle. The conductor pattern is provided on the reticle in two parts each defining a set of substantially alternate fingers of the pattern, and the photoresist is exposed by two overlaid exposures (12a, 12b) each via a respective one of the two parts of the conductor pattern. Exposed photoresist can optionally be developed between the two exposures, and conductors can optionally be formed on the surface between the two exposures. The method reduces diffraction limits, permitting manufacture of surface wave devices with sub-micron linewidths for filtering at increased frequencies.
摘要翻译：表面波器件是通过在通过掩模版曝光光致抗蚀剂所限定的导体图案中的压电材料的表面上形成导体而制成的。导体图案设置在掩模版上，分成两部分，每个部分限定一组基本上交替的图案的指状物，并且光致抗蚀剂通过两个重叠的曝光（12a，12b）暴露，每个通过导体图案的两个部分中的相应一个。暴露的光致抗蚀剂可以任意地在两次曝光之间显影，并且可以可选地在两次曝光之间的表面上形成导体。该方法降低衍射极限，允许制造具有亚微米线宽的表面波器件，以便以更高的频率进行滤波。

9. 发明申请

WO1997042705A1 SURFACE ACOUSTIC WAVE ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：表面声波元件及其制造方法
公开(公告)号：WO1997042705A1
公开(公告)日：1997-11-13
申请号：PCT/JP1997001536
申请日：1997-05-07
申请人： KABUSHIKI KAISHA TOSHIBA , MISHIMA, Naoyuki , KATAMURA, Yukio
发明人： KABUSHIKI KAISHA TOSHIBA
IPC分类号： H03H03/08
CPC分类号： H03H3/08
摘要： The dielectric film (102) of a surface acoustic wave element (100) constituted of a piezoelectric substrate (101) composed of Li2B4O7 (LBO), the dielectric film (102), which is formed on the substrate (101), is composed of SiO2, and has a thickness (h), and a comb-shaped electrode (103b) which is formed on the film (102) at a pitch L and composed of an aluminum thin film is formed by selecting the thickness and specific inductive capacity of the film (102) so that the electromechanical coupling factor K2 can become about 0.74 % or larger.
摘要翻译：由形成在基板（101）上的由Li2B4O7（LBO）构成的压电基板（101）和介电膜（102）构成的表面声波元件（100）的电介质膜（102）由 SiO 2，并且具有厚度（h），并且通过选择由铝薄膜构成的以节距L形成在膜（102）上的梳状电极（103b），其通过选择厚度和介电常数膜（102）使得机电耦合系数K2可以变为约0.74％或更大。

10. 发明申请

WO1996004713A1 SURFACE ACOUSTIC WAVE DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：表面声波装置及其制作方法
公开(公告)号：WO1996004713A1
公开(公告)日：1996-02-15
申请号：PCT/JP1995001554
申请日：1995-08-04
申请人： JAPAN ENERGY CORPORATION , OHKUBO, Yukio , SATO, Takahiro
发明人： JAPAN ENERGY CORPORATION
IPC分类号： H03H03/08
CPC分类号： H03H9/14538 , H03H9/02236 , H03H9/25 , Y10T29/42
摘要： A surface acoustic wave device for processing signals of high frequency as high as 1 GHz or above by using surface acoustic waves, which propagate while radiating bulk waves such as a longitudinal wave type leaky wave perpendicular to a piezoelectric substrate, is given a structure of an IDT having a sufficiently small electrical resistance without increasing a propagation loss. The device includes a piezoelectric substrate (10) and an electrode comprising a conductive film (12) for exciting, receiving, reflecting and propagating an elastic surface wave on the piezoelectric substrate (10), and the surface acoustic wave propagates along the surface of the piezoelectric substrate (10) while radiating at least one transverse wave component of a bulk wave perpendicular to the surface of the piezoelectric substrate (10). The thickness of an insulating film of a first region is different from the thickness of an insulating film (18) of a second region so that the acoustic impedance to the surface acoustic wave becomes substantially equal both in the first region where the conductive film (12) inside the electrode is disposed and the second region where the conductive film inside the electrode is not disposed.
摘要翻译：通过使用与辐射垂直于压电基板的纵波型泄漏波等体波同时传播的表面声波来处理高达1GHz以上的高频信号的声表面波装置，具有如下结构： IDT具有足够小的电阻而不增加传播损耗。该装置包括压电基板（10）和包括用于在压电基板（10）上激发，接收，反射和传播弹性表面波的导电膜（12）的电极，并且声表面波沿着压电基板（10），同时辐射垂直于压电基板（10）的表面的体波的至少一个横波分量。第一区域的绝缘膜的厚度不同于第二区域的绝缘膜（18）的厚度，使得在导电膜（12）的第一区域中声表面波的声阻抗基本上相等），并且不配置电极内部的导电膜的第二区域。

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